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    • 8. 发明授权
    • Spin valve sensors having synthetic antiferromagnet for longitudinal bias
    • 旋转阀传感器具有用于纵向偏置的合成反铁磁体
    • US07289303B1
    • 2007-10-30
    • US09828635
    • 2001-04-05
    • Kyusik SinNingjia ZhuYingjian Chen
    • Kyusik SinNingjia ZhuYingjian Chen
    • G11B5/39
    • G11B5/3932B82Y25/00G01R33/093H01F10/3272Y10T428/1107Y10T428/1121Y10T428/1143
    • Magnetoresistive (MR) sensors are disclosed having mechanisms for reducing edge effects such as Barkhausen noise. The sensors include a pinned layer and a free layer with an exchange coupling layer adjoining the free layer, and a ferromagnetic layer having a fixed magnetic moment adjoining the exchange coupling layer. The exchange coupling layer and ferromagnetic layer form a synthetic antiferromagnetic structure with part of the free layer, providing bias that reduces magnetic instabilities at edges of the free layer. Such synthetic antiferromagnetic structures can provide a stronger bias than conventional antiferromagnetic layers, as well as a more exactly defined track width than conventional hard magnetic bias layers. The synthetic antiferromagnetic structures can also provide protection for the free layer during processing, in contrast with the trimming of conventional antiferromagnetic layers that exposes if not removes part of the free layer.
    • 公开了具有减小诸如巴克豪森噪声等边缘效应的机构的磁阻(MR)传感器。 传感器包括钉扎层和具有邻接自由层的交换耦合层的自由层,以及具有与交换耦合层邻接的固定磁矩的铁磁层。 交换耦合层和铁磁层形成具有部分自由层的合成反铁磁结构,提供降低自由层边缘的磁性不稳定性的偏压。 这种合成反铁磁结构可以提供比常规反铁磁层更强的偏压,以及比常规硬磁偏置层更精确地定义的轨道宽度。 合成反铁磁性结构也可以在加工过程中为自由层提供保护,与如果不除去部分自由层的常规反铁磁层的修整相反。