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1. 发明授权

US07915706B1 Linearity improvements of semiconductor substrate using passivation 有权
标题翻译：使用钝化的半导体衬底的线性改善
公开(公告)号：US07915706B1
公开(公告)日：2011-03-29
申请号：US12169244
申请日：2008-07-08
申请人： Daniel Charles Kerr , Thomas Gregory McKay , Michael Carroll , Joseph M. Gering
发明人： Daniel Charles Kerr , Thomas Gregory McKay , Michael Carroll , Joseph M. Gering
IPC分类号： H01L27/06
CPC分类号： H01L27/0629 , H01L21/823481 , H01L27/08 , H01L27/1203
摘要： The present invention relates to using a potentially trap-rich layer, such as a polycrystalline Silicon layer, over a passivation region of a semiconductor substrate or a Silicon-on-insulator (SOI) device layer to substantially immobilize a surface conduction layer at the surface of the semiconductor substrate or SOI device layer at radio frequency (RF) frequencies. The potentially trap-rich layer may have a high density of traps that trap carriers from the surface conduction layer. The average release time from the traps may be longer than the period of any present RF signals, thereby effectively immobilizing the surface conduction layer, which may substantially prevent capacitance and inductance changes due to the RF signals. Therefore, harmonic distortion of the RF signals may be significantly reduced or eliminated. The semiconductor substrate may be a Silicon substrate, a Gallium Arsenide substrate, or another substrate.
摘要翻译：本发明涉及在半导体衬底或绝缘体上硅（SOI）器件层上的钝化区域上使用诸如多晶硅层的潜在的富阱层，以将表面传导层基本上固定在表面的半导体衬底或SOI器件层的射频（RF）频率。潜在的富含阱的层可以具有高密度的陷阱，其将载流子从表面传导层捕获。来自陷阱的平均释放时间可以比任何现有RF信号的周期长，从而有效地固定表面传导层，这可以基本上防止由于RF信号引起的电容和电感变化。因此，可以显着地减少或消除RF信号的谐波失真。半导体衬底可以是硅衬底，砷化镓衬底或另一衬底。

2. 发明授权

US08076750B1 Linearity improvements of semiconductor substrate based radio frequency devices 有权
公开(公告)号：US08076750B1
公开(公告)日：2011-12-13
申请号：US12958494
申请日：2010-12-02
申请人： Daniel Charles Kerr , Thomas Gregory McKay , Michael Carroll , Joseph M. Gering
发明人： Daniel Charles Kerr , Thomas Gregory McKay , Michael Carroll , Joseph M. Gering
IPC分类号： H01L29/00
CPC分类号： H01L23/645 , H01L23/5227 , H01L23/552 , H01L23/66 , H01L2924/0002 , H01L2924/00
摘要： The present invention relates to using a trap-rich layer, such as a polycrystalline Silicon layer, over a semiconductor substrate to substantially immobilize a surface conduction layer at the surface of the semiconductor substrate at radio frequency (RF) frequencies. The trap-rich layer may have a high density of traps that trap carriers from the surface conduction layer. The average release time from the traps may be longer than the period of any present RF signals, thereby effectively immobilizing the surface conduction layer, which may substantially prevent capacitance and inductance changes due to the RF signals. Therefore, harmonic distortion of the RF signals may be significantly reduced or eliminated. The semiconductor substrate may be a Silicon substrate, a Gallium Arsenide substrate, or another substrate.

3. 发明授权

US07868419B1 Linearity improvements of semiconductor substrate based radio frequency devices 有权
标题翻译：基于半导体衬底的射频器件的线性改善
公开(公告)号：US07868419B1
公开(公告)日：2011-01-11
申请号：US12254499
申请日：2008-10-20
申请人： Daniel Charles Kerr , Thomas Gregory McKay , Michael Carroll , Joseph M. Gering
发明人： Daniel Charles Kerr , Thomas Gregory McKay , Michael Carroll , Joseph M. Gering
IPC分类号： H01L27/08
CPC分类号： H01L23/645 , H01L23/5227 , H01L23/552 , H01L23/66 , H01L2924/0002 , H01L2924/00
摘要： The present invention relates to using a trap-rich layer, such as a polycrystalline Silicon layer, over a semiconductor substrate to substantially immobilize a surface conduction layer at the surface of the semiconductor substrate at radio frequency (RF) frequencies. The trap-rich layer may have a high density of traps that trap carriers from the surface conduction layer. The average release time from the traps may be longer than the period of any present RF signals, thereby effectively immobilizing the surface conduction layer, which may substantially prevent capacitance and inductance changes due to the RF signals. Therefore, harmonic distortion of the RF signals may be significantly reduced or eliminated. The semiconductor substrate may be a Silicon substrate, a Gallium Arsenide substrate, or another substrate.
摘要翻译：本发明涉及在半导体衬底上使用诸如多晶硅层的富集层，以基本上以射频（RF）频率固定在半导体衬底的表面处的表面传导层。富集阱层可具有高密度的陷阱，其将载流子从表面传导层捕获。来自陷阱的平均释放时间可以比任何现有RF信号的周期长，从而有效地固定表面传导层，这可以基本上防止由于RF信号引起的电容和电感变化。因此，可以显着地减少或消除RF信号的谐波失真。半导体衬底可以是硅衬底，砷化镓衬底或另一衬底。

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