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1. 发明申请

US20110141816A1 Tracking Cells For A Memory System 有权
标题翻译：跟踪记忆系统的单元格
公开(公告)号：US20110141816A1
公开(公告)日：2011-06-16
申请号：US13031041
申请日：2011-02-18
申请人： Daniel C. Guterman , Stephen J. Gross , Shahzad Khalid , Geoffrey S. Gongwer
发明人： Daniel C. Guterman , Stephen J. Gross , Shahzad Khalid , Geoffrey S. Gongwer
IPC分类号： G11C16/04
CPC分类号： G11C16/26 , G11C11/5621 , G11C16/349
摘要： Tracking cells are used in a memory system to improve the read process. The tracking cells can provide an indication of the quality of the data and can be used as part of a data recovery operation if there is an error. The tracking cells provide a means to adjust the read parameters to optimum levels in order to reflect the current conditions of the memory system. Read operations are performed on the tracking cells, where threshold voltages of physical states of the tracking cells are further apart than threshold voltages of physical states of non-tracking cells. Based on the read operations, an extent to which the tracking cells are errored is determined.
摘要翻译：在存储器系统中使用跟踪单元来改善读取过程。跟踪单元可以提供数据质量的指示，如果存在错误，可以将其用作数据恢复操作的一部分。跟踪单元提供了将读取参数调整到最佳水平以便反映存储器系统的当前状况的手段。在跟踪单元上执行读操作，其中跟踪单元的物理状态的阈值电压比非跟踪单元的物理状态的阈值电压更远。基于读取操作，确定跟踪单元被错误的程度。

2. 发明授权

US07681094B2 Data recovery in a memory system using tracking cells 有权
标题翻译：使用跟踪单元的存储系统中的数据恢复
公开(公告)号：US07681094B2
公开(公告)日：2010-03-16
申请号：US11752024
申请日：2007-05-22
申请人： Daniel C. Guterman , Stephen J. Gross , Shahzad Khalid , Geoffrey S. Gongwer
发明人： Daniel C. Guterman , Stephen J. Gross , Shahzad Khalid , Geoffrey S. Gongwer
IPC分类号： G11C29/00 , G06F13/00
CPC分类号： G11C16/26 , G11C11/5621 , G11C16/349
摘要： Tracking cells are used in a memory system to improve the read process. The tracking cells can provide an indication of the quality of the data and can be used as part of a data recovery operation if there is an error. The tracking cells provide a means to adjust the read parameters to optimum levels in order to reflect the current conditions of the memory system. Additionally, some memory systems that use multi-state memory cells will apply rotation data schemes to minimize wear. The rotation scheme can be encoded in the tracking cells based on the states of multiple tracking cells, which is decoded upon reading.
摘要翻译：在存储器系统中使用跟踪单元来改善读取过程。跟踪单元可以提供数据质量的指示，如果存在错误，可以将其用作数据恢复操作的一部分。跟踪单元提供了将读取参数调整到最佳水平以便反映存储器系统的当前状况的手段。另外，使用多状态存储器单元的一些存储器系统将应用旋转数据方案以最小化磨损。可以基于多个跟踪单元的状态在跟踪单元中编码旋转方案，该单元在读取时被解码。

3. 发明授权

US07237074B2 Tracking cells for a memory system 有权
标题翻译：跟踪单元格的内存系统
公开(公告)号：US07237074B2
公开(公告)日：2007-06-26
申请号：US10461244
申请日：2003-06-13
申请人： Daniel C. Guterman , Stephen J. Gross , Shahzad Khalid , Geoffrey S. Gongwer
发明人： Daniel C. Guterman , Stephen J. Gross , Shahzad Khalid , Geoffrey S. Gongwer
IPC分类号： G12F12/00
CPC分类号： G11C16/26 , G11C11/5621 , G11C16/349
摘要： Tracking cells are used in a memory system to improve the read process. The tracking cells can provide an indication of the quality of the data and can be used as part of a data recovery operation if there is an error. The tracking cells provide a means to adjust the read parameters to optimum levels in order to reflect the current conditions of the memory system. Additionally, some memory systems that use multi-state memory cells will apply rotation data schemes to minimize wear. The rotation scheme can be encoded in the tracking cells based on the states of multiple tracking cells, which is decoded upon reading.
摘要翻译：在存储器系统中使用跟踪单元来改善读取过程。跟踪单元可以提供数据质量的指示，如果存在错误，可以将其用作数据恢复操作的一部分。跟踪单元提供了将读取参数调整到最佳水平以便反映存储器系统的当前状况的手段。另外，使用多状态存储器单元的一些存储器系统将应用旋转数据方案以最小化磨损。可以基于多个跟踪单元的状态在跟踪单元中编码旋转方案，该单元在读取时被解码。

4. 发明授权

US07760555B2 Tracking cells for a memory system 有权
标题翻译：跟踪单元格的内存系统
公开(公告)号：US07760555B2
公开(公告)日：2010-07-20
申请号：US11752008
申请日：2007-05-22
申请人： Daniel C. Guterman , Stephen J. Gross , Shahzad Khalid , Geoffrey S. Gongwer
发明人： Daniel C. Guterman , Stephen J. Gross , Shahzad Khalid , Geoffrey S. Gongwer
IPC分类号： G11C16/04
CPC分类号： G11C16/26 , G11C11/5621 , G11C16/349
摘要： Tracking cells are used in a memory system to improve the read process. The tracking cells can provide an indication of the quality of the data and can be used as part of a data recovery operation if there is an error. The tracking cells provide a means to adjust the read parameters to optimum levels in order to reflect the current conditions of the memory system. Additionally, some memory systems that use multi-state memory cells will apply rotation data schemes to minimize wear. The rotation scheme can be encoded in the tracking cells based on the states of multiple tracking cells, which is decoded upon reading.
摘要翻译：在存储器系统中使用跟踪单元来改善读取过程。跟踪单元可以提供数据质量的指示，如果存在错误，可以将其用作数据恢复操作的一部分。跟踪单元提供了将读取参数调整到最佳水平以便反映存储器系统的当前状况的手段。另外，使用多状态存储器单元的一些存储器系统将应用旋转数据方案以最小化磨损。可以基于多个跟踪单元的状态在跟踪单元中编码旋转方案，该单元在读取时被解码。

5. 发明授权

US07916552B2 Tracking cells for a memory system 有权
标题翻译：跟踪单元格的内存系统
公开(公告)号：US07916552B2
公开(公告)日：2011-03-29
申请号：US12763569
申请日：2010-04-20
申请人： Daniel C. Guterman , Stephen J. Gross , Shazad Khalid , Geoffrey S. Gongwer
发明人： Daniel C. Guterman , Stephen J. Gross , Shazad Khalid , Geoffrey S. Gongwer
IPC分类号： G11C16/04
CPC分类号： G11C16/26 , G11C11/5621 , G11C16/349
摘要： Tracking cells are used in a memory system to improve the read process. The tracking cells can provide an indication of the quality of the data and can be used as part of a data recovery operation if there is an error. The tracking cells provide a means to adjust the read parameters to optimum levels in order to reflect the current conditions of the memory system. Additionally, some memory systems that use multi-state memory cells will apply rotation data schemes to minimize wear. The rotation scheme can be encoded in the tracking cells based on the states of multiple tracking cells, which is decoded upon reading.
摘要翻译：在存储器系统中使用跟踪单元来改善读取过程。跟踪单元可以提供数据质量的指示，如果存在错误，可以将其用作数据恢复操作的一部分。跟踪单元提供了将读取参数调整到最佳水平以便反映存储器系统的当前状况的手段。另外，使用多状态存储器单元的一些存储器系统将应用旋转数据方案以最小化磨损。可以基于多个跟踪单元的状态在跟踪单元中编码旋转方案，该单元在读取时被解码。

6. 发明申请

US20100202199A1 TRACKING CELLS FOR A MEMORY SYSTEM 有权
标题翻译：跟踪记忆系统的细胞
公开(公告)号：US20100202199A1
公开(公告)日：2010-08-12
申请号：US12763569
申请日：2010-04-20
申请人： Daniel C. Guterman , Stephen J. Gross , Shazad Khalid , Geoffrey S. Gongwer
发明人： Daniel C. Guterman , Stephen J. Gross , Shazad Khalid , Geoffrey S. Gongwer
IPC分类号： G11C16/02 , G11C16/04
CPC分类号： G11C16/26 , G11C11/5621 , G11C16/349
摘要： Tracking cells are used in a memory system to improve the read process. The tracking cells can provide an indication of the quality of the data and can be used as part of a data recovery operation if there is an error. The tracking cells provide a means to adjust the read parameters to optimum levels in order to reflect the current conditions of the memory system. Additionally, some memory systems that use multi-state memory cells will apply rotation data schemes to minimize wear. The rotation scheme can be encoded in the tracking cells based on the states of multiple tracking cells, which is decoded upon reading.
摘要翻译：在存储器系统中使用跟踪单元来改善读取过程。跟踪单元可以提供数据质量的指示，如果存在错误，可以将其用作数据恢复操作的一部分。跟踪单元提供了将读取参数调整到最佳水平以便反映存储器系统的当前状况的手段。另外，使用多状态存储器单元的一些存储器系统将应用旋转数据方案以最小化磨损。可以基于多个跟踪单元的状态在跟踪单元中编码旋转方案，该单元在读取时被解码。

7. 发明授权

US06486715B2 System and method for achieving fast switching of analog voltages on large capacitive load 有权
标题翻译：在大电容负载下实现模拟电压的快速切换的系统和方法
公开(公告)号：US06486715B2
公开(公告)日：2002-11-26
申请号：US09825615
申请日：2001-04-02
申请人： Geoffrey S. Gongwer , Shahzad Khalid
发明人： Geoffrey S. Gongwer , Shahzad Khalid
IPC分类号： H03K17687
CPC分类号： G11C5/145 , G11C8/08
摘要： Driver (100) and method are provided for driving capacitive load (120) that achieve an improved response time without increasing power consumption of the driver. Driver (100) has load buffer (105) with an input (110) for receiving an input voltage (VIN), and an output 115 for coupling an output voltage (VOUT) to load 120. VOUT is driven between a first voltage level (V1) and a second voltage level (V2) in response to changes in VIN. Driver (100) also has reserve circuit (125) with capacitor (130), reserve buffer (135), switch (140) for coupling the capacitor to capacitive load (120) and controller (145) for operating the switch. Reserve buffer (135) has an input (150) for receiving an input voltage (VRES—IN), and an output (155) for coupling an output voltage (VRES—OUT) to capacitor (130) to charge the capacitor. Controller (145) is configured to operate switch (140) to couple capacitor (130) to capacitive load (120) when VOUT is being driven between V1 and V2.
摘要翻译：驱动器（100）和方法被提供用于驱动电容性负载（120），其实现改善的响应时间，而不增加驱动器的功率消耗。驱动器（100）具有负载缓冲器（105），其具有用于接收输入电压（VIN）的输入端（110）和用于将输出电压（VOUT）耦合到负载120的输出端115.VOUT在第一电压电平 V1）和响应于VIN变化的第二电压电平（V2）。驱动器（100）还具有用于将电容器耦合到电容性负载（120）的开关（140）和用于操作开关的控制器（145）的具有电容器（130），保留缓冲器（135）的开关（140）。保留缓冲器（135）具有用于接收输入电压（VRES-IN）的输入端（150）和用于将输出电压（VRES-OUT）耦合到电容器（130）以对电容器充电的输出端（155）。当VOUT在V1和V2之间被驱动时，控制器（145）被配置为操作开关（140）以将电容器（130）耦合到电容性负载（120）。

8. 发明授权

US07243275B2 Smart verify for multi-state memories 有权
标题翻译：智能验证多状态存储器
公开(公告)号：US07243275B2
公开(公告)日：2007-07-10
申请号：US11304961
申请日：2005-12-14
申请人： Geoffrey S. Gongwer , Daniel C. Guterman , Yupin Kawing Fong
发明人： Geoffrey S. Gongwer , Daniel C. Guterman , Yupin Kawing Fong
IPC分类号： G11C29/00 , G11C7/00
CPC分类号： G11C11/5635 , G11C11/5628 , G11C16/3454 , G11C16/3459 , G11C2211/5621
摘要： A “smart verify” technique, whereby multi-state memories are programmed using a verify-results-based dynamic adjustment of the multi-states verify range for sequential-state-based verify implementations, is presented. This technique can increase multi-state write speed while maintaining reliable operation within sequentially verified, multi-state memory implementations by providing “intelligent” element to minimize the number of sequential verify operations for each program/verify/lockout step of the write sequence. At the beginning of a program/verify cycle sequence only the lowest state or states are checked during the verify phase. As lower states are reached, additional higher states are added to the verify sequence and lower states can be removed.
摘要翻译：提出了一种“智能验证”技术，其中使用基于验证结果的动态调整多状态验证范围对基于顺序状态的验证实现来编程多状态存储器。该技术可以通过提供“智能”元件来最小化写入序列的每个程序/验证/锁定步骤的顺序验证操作的数量，从而提高多状态写入速度，同时在顺序验证的多状态存储器实现中保持可靠的操作。在程序/验证周期序列的开始，在验证阶段只检查最低的状态或状态。当达到较低的状态时，额外的更高的状态被添加到验证序列中，并且可以去除较低的状态。

9. 发明授权

US07092292B2 Noise reduction technique for transistors and small devices utilizing an episodic agitation 有权
公开(公告)号：US07092292B2
公开(公告)日：2006-08-15
申请号：US10976692
申请日：2004-10-28
申请人： Nima Mokhlesi , Daniel C. Guterman , Geoffrey S. Gongwer
发明人： Nima Mokhlesi , Daniel C. Guterman , Geoffrey S. Gongwer
IPC分类号： G11C16/04
CPC分类号： G11C11/5642 , G11C16/0458 , G11C16/26
摘要： The present invention presents methods for reducing the amount of noise inherent in the reading of a non-volatile storage device by applying an episodic agitation (e.g. a time varying voltage) to some terminal(s) of the cell as part of the reading process. Various aspects of the present invention also extend to devices beyond non-volatile memories. According to one aspect of the present invention, in addition to the normal voltage levels applied to the cell as part of the reading process, a time varying voltage is applied to the cell. A set of exemplary embodiments apply a single or multiple set of alternating voltages to one or more terminals of a floating gate memory cell just prior to or during the signal integration time of a read process. In other embodiments, other reproducible external or internal agitations which are repeatable, and whose average effect (from one integration time to the next integration time) remains sufficiently constant so as to have a net noise reduction effect is applicable.

10. 发明授权

US06678192B2 Error management for writable tracking storage units 有权
标题翻译：可写跟踪存储单元的错误管理
公开(公告)号：US06678192B2
公开(公告)日：2004-01-13
申请号：US10053339
申请日：2001-11-02
申请人： Geoffrey S. Gongwer , Shahzad B. Khalid , Daniel C. Guterman
发明人： Geoffrey S. Gongwer , Shahzad B. Khalid , Daniel C. Guterman
IPC分类号： G11C1606
CPC分类号： G11C16/349 , G11C11/5621 , G11C11/5642 , G11C16/28 , G11C29/00
摘要： A memory system (e.g., memory card) having error management for stored levels (e.g., reference levels) used in discrimination of logic levels for data storage units providing data storage is disclosed. The stored levels can be stored in predetermined storage units (e.g., writable tracking storage units) in the memory system. The memory system is typically a non-volatile memory product or device that provides binary or multi-state data storage.
摘要翻译：公开了一种对提供数据存储的数据存储单元的逻辑电平进行辨别的存储电平（例如参考电平）的错误管理的存储器系统（例如，存储卡）。存储的电平可以存储在存储器系统中的预定存储单元（例如，可写跟踪存储单元）中。存储器系统通常是提供二进制或多状态数据存储的非易失性存储器产品或设备。

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