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1. 发明申请

US20110056626A1 REPLACEABLE UPPER CHAMBER PARTS OF PLASMA PROCESSING APPARATUS 有权
标题翻译：等离子加工设备可更换的上部部件
公开(公告)号：US20110056626A1
公开(公告)日：2011-03-10
申请号：US12879351
申请日：2010-09-10
申请人： Daniel Arthur Brown , Jeff A. Bogart , Ian J. Kenworthy
发明人： Daniel Arthur Brown , Jeff A. Bogart , Ian J. Kenworthy
IPC分类号： H01L21/306
CPC分类号： H01J37/3244 , C23C16/45563 , C23C16/45578 , H01J37/321 , H01J37/32119 , H01J37/32449 , H01J37/32458 , H01J37/32477 , H01J37/32495 , H01J37/32513 , H01J37/32522
摘要： An upper chamber section of a plasma reaction chamber includes a ceramic window with blind bores in an upper surface for receipt of a thermal couple and a resistance temperature detector, a top chamber interface which comprises an upper surface which vacuum seals against the bottom of the window and a gas injection system comprising 8 side injectors mounted in the sidewall of the top chamber interface and a gas delivery system comprising tubing which provides symmetric gas flow to the 8 injectors from a single gas feed connection.
摘要翻译：等离子体反应室的上腔室包括在上表面中具有用于接收热偶的盲孔的陶瓷窗口和电阻温度检测器，顶室接口，其包括上表面，真空密封在窗口的底部以及气体注入系统，其包括安装在顶部腔室界面的侧壁中的8个侧注射器，以及气体输送系统，其包括从单个气体进料连接向8个喷射器提供对称气体流的管道。

2. 发明授权

US09076634B2 Replaceable upper chamber parts of plasma processing apparatus 有权
标题翻译：等离子处理装置的可更换的上室部件
公开(公告)号：US09076634B2
公开(公告)日：2015-07-07
申请号：US12879351
申请日：2010-09-10
申请人： Daniel Arthur Brown , Jeff A. Bogart , Ian J. Kenworthy
发明人： Daniel Arthur Brown , Jeff A. Bogart , Ian J. Kenworthy
IPC分类号： H01J37/32
CPC分类号： H01J37/3244 , C23C16/45563 , C23C16/45578 , H01J37/321 , H01J37/32119 , H01J37/32449 , H01J37/32458 , H01J37/32477 , H01J37/32495 , H01J37/32513 , H01J37/32522
摘要： An upper chamber section of a plasma reaction chamber includes a ceramic window with blind bores in an upper surface for receipt of a thermal couple and a resistance temperature detector, a top chamber interface which comprises an upper surface which vacuum seals against the bottom of the window and a gas injection system comprising 8 side injectors mounted in the sidewall of the top chamber interface and a gas delivery system comprising tubing which provides symmetric gas flow to the 8 injectors from a single gas feed connection.
摘要翻译：等离子体反应室的上腔室包括在上表面中具有用于接收热偶的盲孔的陶瓷窗口和电阻温度检测器，顶室接口，其包括上表面，真空密封在窗口的底部以及气体注入系统，其包括安装在顶部腔室界面的侧壁中的8个侧注射器，以及气体输送系统，其包括从单个气体进料连接向8个喷射器提供对称气体流的管道。

3. 发明申请

US20130264309A1 ACOUSTIC ENERGY UTILIZATION IN PLASMA PROCESSING 审中-公开
标题翻译：等离子体处理中的声学能量利用
公开(公告)号：US20130264309A1
公开(公告)日：2013-10-10
申请号：US13440884
申请日：2012-04-05
申请人： Ian J. Kenworthy , Daniel A. Brown , Cliff E. La Croix , Josh A. Cormier
发明人： Ian J. Kenworthy , Daniel A. Brown , Cliff E. La Croix , Josh A. Cormier
IPC分类号： H05H1/24 , B44C1/22
CPC分类号： H01J37/32 , H01J37/32798 , H05H1/2475 , H05H2001/2481 , H05H2001/2487
摘要： Methods and apparatus for processing a substrate using plasma are disclosed. The apparatus includes a plasma processing system having a process gas supply arrangement for supplying a process gas into an interior region of said chamber and a plasma source configured for generating said plasma at least from said process gas. The apparatus also includes an acoustic energy generator arrangement configured to apply acoustic energy to at least one of a chamber component and said substrate, wherein said acoustic energy generator generates said acoustic energy in the range of 10 Hz to 1 MHz using at least one of a piezoelectric transducing, mechanical coupling vibration, wafer backside gas pulsing, pulsing of said process gas, pressure wave pulsing, and electromagnetic coupling.
摘要翻译：公开了使用等离子体处理衬底的方法和装置。该装置包括等离子体处理系统，其具有用于将处理气体供应到所述室的内部区域中的处理气体供应装置和至少从所述处理气体产生所述等离子体的等离子体源。该装置还包括声能发生器装置，其配置成将声能施加到腔室部件和所述衬底中的至少一个，其中所述声能发生器使用以下中的至少一个来产生在10Hz至1MHz的范围内的所述声能：压电传感，机械耦合振动，晶片背面气体脉冲，所述工艺气体的脉冲，压力波脉冲和电磁耦合。

4. 发明申请

US20080241517A1 Aluminum-plated components of semiconductor material processing apparatuses and methods of manufacturing the components 有权
标题翻译：半导体材料加工装置的镀铝部件及其制造方法
公开(公告)号：US20080241517A1
公开(公告)日：2008-10-02
申请号：US11730049
申请日：2007-03-29
申请人： Ian J. Kenworthy , Kelly W. Fong , Leonard J. Sharpless
发明人： Ian J. Kenworthy , Kelly W. Fong , Leonard J. Sharpless
IPC分类号： B32B15/04 , B32B15/01 , B08B6/00 , C23G1/00 , B01J19/12 , C25D3/00 , C23F1/00
CPC分类号： C23C16/4404 , B32B15/01 , C25D3/44 , C25D3/665 , C25D5/48 , C25D7/00 , C25D11/04 , C25D11/08 , Y10T428/12736 , Y10T428/12764 , Y10T428/26 , Y10T428/31678
摘要： Aluminum-plated components of semiconductor material processing apparatuses are disclosed. The components include a substrate and an optional intermediate layer formed on at least one surface of the substrate. The intermediate layer includes at least one surface. An aluminum plating is formed on the substrate, or on the optional intermediate layer. The surface on which the aluminum plating is formed is electrically-conductive. An anodized layer can optionally be formed on the aluminum plating. The aluminum plating or optional the anodized layer comprises a process-exposed surface of the component. Semiconductor material processing apparatuses including one or more aluminum-plated components, methods of processing substrates, and methods of making the aluminum-plated components are also disclosed.
摘要翻译：公开了半导体材料加工装置的镀铝部件。这些组件包括基材和形成在基材的至少一个表面上的任选的中间层。中间层包括至少一个表面。在基板上或可选的中间层上形成铝电镀。形成铝电镀的表面是导电的。可以可选地在铝电镀上形成阳极氧化层。铝电镀或可选的阳极氧化层包括组件的工艺暴露表面。还公开了包括一种或多种镀铝组件的半导体材料处理设备，基板的处理方法以及制造镀铝部件的方法。

5. 发明申请

US20120309204A1 GAS DISTRIBUTION SHOWERHEAD FOR INDUCTIVELY COUPLED PLASMA ETCH REACTOR 有权
标题翻译：用于电感耦合等离子体蚀刻反应器的气体分布式淋洗器
公开(公告)号：US20120309204A1
公开(公告)日：2012-12-06
申请号：US13118899
申请日：2011-05-31
申请人： Michael Kang , Alex Paterson , Ian J. Kenworthy
发明人： Michael Kang , Alex Paterson , Ian J. Kenworthy
IPC分类号： H01L21/3065
CPC分类号： H01L21/30604 , B05B1/185 , B05D1/62 , C23C16/455 , C23C16/45561 , C23C16/505 , C23C16/507 , H01J37/3211 , H01J37/3244 , H01J2237/3341 , H01L21/30655 , H01L21/67069
摘要： A two piece ceramic showerhead includes upper and lower plates which deliver process gas to an inductively coupled plasma processing chamber. The upper plate overlies the lower plate and includes radially extending gas passages which extend inwardly from an outer periphery of the upper plate, axially extending gas passages in fluid communication with the radially extending gas passages and an annular recess forming a plenum between the upper and lower plates. The lower plate includes axially extending gas holes in fluid communication with the plenum. The upper plate can include eight radially extending gas passages evenly spaced around the periphery of the upper plate and the lower plate can include inner and outer rows of gas holes. The two piece ceramic showerhead forms a dielectric window of the chamber through which radiofrequency energy generated by an antenna is coupled into the chamber. A gas delivery system delivers process gas to a plenum between the upper and lower plates having a gas volume of no greater than 500 cm3. The gas holes in the lower plate extend between the plenum and a plasma exposed yttria coated surface of the lower plate. The gas delivery system is operable to supply an etching gas and a deposition gas into the processing chamber such that the etching gas in the plenum can be replaced with the deposition gas within about 200 milliseconds and vice versa.
摘要翻译：两件式陶瓷喷头包括将处理气体输送到电感耦合等离子体处理室的上板和下板。上板覆盖在下板上，并且包括从上板的外周向内延伸的径向延伸的气体通道，与径向延伸的气体通道流体连通的轴向延伸的气体通道和在上部和下部之间形成增压室的环形凹槽盘子下板包括与增压室流体连通的轴向延伸的气孔。上板可包括围绕上板周边均匀分布的八个径向延伸的气体通道，下板可包括内排和外排气孔。两件式陶瓷喷头形成室的电介质窗口，通过天线产生的射频能量耦合到腔室中。气体输送系统将处理气体输送到具有不大于500cm 3的气体体积的上板和下板之间的增压室。下板中的气孔在气室和下板的等离子体暴露的氧化钇涂层表面之间延伸。气体输送系统可操作以将蚀刻气体和沉积气体供应到处理室中，使得气室中的蚀刻气体可以在大约200毫秒内被沉积气体代替，反之亦然。

6. 发明授权

US08282987B2 Aluminum-plated components of semiconductor material and methods of manufacturing the components 有权
标题翻译：半导体材料的镀铝组件和制造组件的方法
公开(公告)号：US08282987B2
公开(公告)日：2012-10-09
申请号：US13362169
申请日：2012-01-31
申请人： Ian J. Kenworthy , Kelly W. Fong , Leonard J. Sharpless
发明人： Ian J. Kenworthy , Kelly W. Fong , Leonard J. Sharpless
IPC分类号： B05D5/12 , C25D3/00
CPC分类号： C23C16/4404 , B32B15/01 , C25D3/44 , C25D3/665 , C25D5/48 , C25D7/00 , C25D11/04 , C25D11/08 , Y10T428/12736 , Y10T428/12764 , Y10T428/26 , Y10T428/31678
摘要： Aluminum-plated components of semiconductor material processing apparatuses are disclosed. The components include a substrate and an optional intermediate layer formed on at least one surface of the substrate. The intermediate layer includes at least one surface. An aluminum plating is formed on the substrate, or on the optional intermediate layer. The surface on which the aluminum plating is formed is electrically-conductive. An anodized layer can optionally be formed on the aluminum plating. The aluminum plating or optional the anodized layer comprises a process-exposed surface of the component. Semiconductor material processing apparatuses including one or more aluminum-plated components, methods of processing substrates, and methods of making the aluminum-plated components are also disclosed.
摘要翻译：公开了半导体材料加工装置的镀铝部件。这些组件包括基材和形成在基材的至少一个表面上的任选的中间层。中间层包括至少一个表面。在基板上或可选的中间层上形成铝电镀。形成铝电镀的表面是导电的。可以可选地在铝电镀上形成阳极氧化层。铝电镀或可选的阳极氧化层包括组件的工艺暴露表面。还公开了包括一种或多种镀铝组件的半导体材料处理设备，基板的处理方法以及制造镀铝部件的方法。

7. 发明授权

US08128750B2 Aluminum-plated components of semiconductor material processing apparatuses and methods of manufacturing the components 有权
标题翻译：半导体材料加工装置的镀铝部件及其制造方法
公开(公告)号：US08128750B2
公开(公告)日：2012-03-06
申请号：US11730049
申请日：2007-03-29
申请人： Ian J. Kenworthy , Kelly W. Fong , Leonard J. Sharpless
发明人： Ian J. Kenworthy , Kelly W. Fong , Leonard J. Sharpless
IPC分类号： C23C16/00 , C23C14/00
CPC分类号： C23C16/4404 , B32B15/01 , C25D3/44 , C25D3/665 , C25D5/48 , C25D7/00 , C25D11/04 , C25D11/08 , Y10T428/12736 , Y10T428/12764 , Y10T428/26 , Y10T428/31678
摘要： Aluminum-plated components of semiconductor material processing apparatuses are disclosed. The components include a substrate and an optional intermediate layer formed on at least one surface of the substrate. The intermediate layer includes at least one surface. An aluminum plating is formed on the substrate, or on the optional intermediate layer. The surface on which the aluminum plating is formed is electrically-conductive. An anodized layer can optionally be formed on the aluminum plating. The aluminum plating or optional the anodized layer comprises a process-exposed surface of the component. Semiconductor material processing apparatuses including one or more aluminum-plated components, methods of processing substrates, and methods of making the aluminum-plated components are also disclosed.
摘要翻译：公开了半导体材料加工装置的镀铝部件。这些组件包括基材和形成在基材的至少一个表面上的任选的中间层。中间层包括至少一个表面。在基板上或可选的中间层上形成铝电镀。形成铝电镀的表面是导电的。可以可选地在铝电镀上形成阳极氧化层。铝电镀或可选的阳极氧化层包括组件的工艺暴露表面。还公开了包括一种或多种镀铝组分的半导体材料处理设备，基板的处理方法和制造镀铝组件的方法。

8. 发明授权

US08562785B2 Gas distribution showerhead for inductively coupled plasma etch reactor 有权
标题翻译：用于电感耦合等离子体蚀刻反应器的气体分配喷头
公开(公告)号：US08562785B2
公开(公告)日：2013-10-22
申请号：US13118899
申请日：2011-05-31
申请人： Michael Kang , Alex Paterson , Ian J. Kenworthy
发明人： Michael Kang , Alex Paterson , Ian J. Kenworthy
IPC分类号： C23C16/505 , C23C16/507 , C23C16/455 , C23F1/00 , H01L21/306 , C23C16/06 , C23C16/22
CPC分类号： H01L21/30604 , B05B1/185 , B05D1/62 , C23C16/455 , C23C16/45561 , C23C16/505 , C23C16/507 , H01J37/3211 , H01J37/3244 , H01J2237/3341 , H01L21/30655 , H01L21/67069
摘要： A two piece ceramic showerhead includes upper and lower plates which deliver process gas to an inductively coupled plasma processing chamber. The upper plate overlies the lower plate and includes radially extending gas passages which extend inwardly from an outer periphery of the upper plate, axially extending gas passages in fluid communication with the radially extending gas passages and an annular recess forming a plenum between the upper and lower plates. The lower plate includes axially extending gas holes in fluid communication with the plenum. The upper plate can include eight radially extending gas passages evenly spaced around the periphery of the upper plate and the lower plate can include inner and outer rows of gas holes. The two piece ceramic showerhead forms a dielectric window of the chamber through which radiofrequency energy generated by an antenna is coupled into the chamber. A gas delivery system delivers process gas to a plenum between the upper and lower plates having a gas volume of no greater than 500 cm3. The gas holes in the lower plate extend between the plenum and a plasma exposed yttria coated surface of the lower plate. The gas delivery system is operable to supply an etching gas and a deposition gas into the processing chamber such that the etching gas in the plenum can be replaced with the deposition gas within about 200 milliseconds and vice versa.
摘要翻译：两件式陶瓷喷头包括将处理气体输送到电感耦合等离子体处理室的上板和下板。上板覆盖在下板上，并且包括从上板的外周向内延伸的径向延伸的气体通道，与径向延伸的气体通道流体连通的轴向延伸的气体通道和在上部和下部之间形成增压室的环形凹槽盘子下板包括与增压室流体连通的轴向延伸的气孔。上板可包括围绕上板周边均匀分布的八个径向延伸的气体通道，下板可包括内排和外排气孔。两件式陶瓷喷头形成室的电介质窗口，通过天线产生的射频能量耦合到腔室中。气体输送系统将处理气体输送到具有不大于500cm 3的气体体积的上板和下板之间的增压室。下板中的气孔在气室和下板的等离子体暴露的氧化钇涂层表面之间延伸。气体输送系统可操作以将蚀刻气体和沉积气体供应到处理室中，使得气室中的蚀刻气体可以在大约200毫秒内被沉积气体代替，反之亦然。

9. 发明申请

US20120132532A1 ALUMINUM-PLATED COMPONENTS OF SEMICONDUCTOR MATERIAL PROCESSING APPARATUSES AND METHODS OF MANUFACTURING THE COMPONENTS 有权
标题翻译：半导体材料加工设备的铝板组件和制造组件的方法
公开(公告)号：US20120132532A1
公开(公告)日：2012-05-31
申请号：US13362169
申请日：2012-01-31
申请人： Ian J. Kenworthy , Kelly W. Fong , Leonard J. Sharpless
发明人： Ian J. Kenworthy , Kelly W. Fong , Leonard J. Sharpless
IPC分类号： C25D7/12 , C23C28/00 , C25D5/54 , C25D11/04
CPC分类号： C23C16/4404 , B32B15/01 , C25D3/44 , C25D3/665 , C25D5/48 , C25D7/00 , C25D11/04 , C25D11/08 , Y10T428/12736 , Y10T428/12764 , Y10T428/26 , Y10T428/31678
摘要： Aluminum-plated components of semiconductor material processing apparatuses are disclosed. The components include a substrate and an optional intermediate layer formed on at least one surface of the substrate. The intermediate layer includes at least one surface. An aluminum plating is formed on the substrate, or on the optional intermediate layer. The surface on which the aluminum plating is formed is electrically-conductive. An anodized layer can optionally be formed on the aluminum plating. The aluminum plating or optional the anodized layer comprises a process-exposed surface of the component. Semiconductor material processing apparatuses including one or more aluminum-plated components, methods of processing substrates, and methods of making the aluminum-plated components are also disclosed.
摘要翻译：公开了半导体材料加工装置的镀铝部件。这些组件包括基材和形成在基材的至少一个表面上的任选的中间层。中间层包括至少一个表面。在基板上或可选的中间层上形成铝电镀。形成铝电镀的表面是导电的。可以可选地在铝电镀上形成阳极氧化层。铝电镀或可选的阳极氧化层包括组件的工艺暴露表面。还公开了包括一种或多种镀铝组件的半导体材料处理设备，基板的处理方法以及制造镀铝部件的方法。

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