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1. 发明授权

US5063174A Si/Au/Ni alloyed ohmic contact to n-GaAs and fabricating process therefor 失效
标题翻译： Si / Au / Ni合金欧姆接触到n-GaAs并制造工艺
公开(公告)号：US5063174A
公开(公告)日：1991-11-05
申请号：US585015
申请日：1990-09-18
申请人： Dana M. Beyea , Kathleen Meehan
发明人： Dana M. Beyea , Kathleen Meehan
IPC分类号： H01L21/28 , H01L21/285
CPC分类号： H01L21/28 , H01L21/28575 , Y10S148/02 , Y10S438/98
摘要： An improved alloyed ohmic contact to n-type GaAs is provided utilizing a Si-based metallization of Si/Au/Ni and exhibiting low contact resistivity and high thermal stability. An improved process for fabricating the inventive contact is also provided comprising the step of first depositing the Si film on the GaAs substrate, thereby simplifying the fabrication of monolithically integrated devices, particularly advanced electro-optic devices, by incorporating self-aligned Si-based contacts in the process. A further improvement is provided in the use of a lift-off-defined Si layer as a reactive-ion etch mask to serve as the self-aligned contact in the process, thereby eliminating a critical photolithographic step of aligning the contact metallization.
摘要翻译：使用Si / Au / Ni的Si基金属化并且具有低接触电阻率和高热稳定性来提供与n型GaAs的改进的合金欧姆接触。还提供了用于制造本发明接触的改进方法，其包括首先在GaAs衬底上沉积Si膜的步骤，从而通过结合自对准的Si基触点来简化单片集成器件，特别是先进的电光器件的制造正在进行中。在使用剥离定义的Si层作为反应离子蚀刻掩模的过程中提供了进一步的改进，以用作该过程中的自对准接触，从而消除了对准接触金属化的临界光刻步骤。

2. 发明申请

US20050270538A1 Device and method for tuning an SPR device 失效
标题翻译：用于调整SPR设备的设备和方法
公开(公告)号：US20050270538A1
公开(公告)日：2005-12-08
申请号：US11131928
申请日：2005-05-17
申请人： Kathleen Meehan , Raymond Dessy
发明人： Kathleen Meehan , Raymond Dessy
IPC分类号： G01N21/55 , G02F1/19
CPC分类号： G01N21/553 , G01N21/554 , G02F1/195 , G02F2203/10
摘要： The invention related to devices and methods wherein the conditions, under which surface plasmon resonance is established, are modified by altering the balance between orientations of the spins of charge carriers in an SPR layer. The embodiments of this invention may be used as logical gates, optical filters and absorbers, optoelectronic mixers, and tunable surface plasmon sensors.
摘要翻译：本发明涉及其中通过改变SPR层中电荷载流子自旋的取向之间的平衡来修饰表面等离子体共振所建立的条件的装置和方法。本发明的实施例可以用作逻辑门，光学滤波器和吸收器，光电混频器和可调谐表面等离子体激元传感器。

3. 发明授权

US07193719B2 Device and method for tuning an SPR device 失效
标题翻译：用于调整SPR设备的设备和方法
公开(公告)号：US07193719B2
公开(公告)日：2007-03-20
申请号：US11131928
申请日：2005-05-17
申请人： Kathleen Meehan , Raymond E. Dessy
发明人： Kathleen Meehan , Raymond E. Dessy
IPC分类号： G01N21/55
CPC分类号： G01N21/553 , G01N21/554 , G02F1/195 , G02F2203/10
摘要： The invention related to devices and methods wherein the conditions, under which surface plasmon resonance is established, are modified by altering the balance between orientations of the spins of charge carriers in an SPR layer. The embodiments of this invention may be used as logical gates, optical filters and absorbers, optoelectronic mixers, and tunable surface plasmon sensors.
摘要翻译：本发明涉及其中通过改变SPR层中电荷载流子自旋的取向之间的平衡来修饰表面等离子体共振所建立的条件的装置和方法。本发明的实施例可以用作逻辑门，光学滤波器和吸收器，光电混频器和可调谐表面等离子体激元传感器。

4. 发明授权

US4797179A Fabrication of integral lenses on LED devices 失效
标题翻译：集成透镜在LED器件上的制造
公开(公告)号：US4797179A
公开(公告)日：1989-01-10
申请号：US060772
申请日：1987-06-09
申请人： George P. Watson , Kathleen Meehan
发明人： George P. Watson , Kathleen Meehan
IPC分类号： H01L33/20 , H01L21/306 , B44C1/22
CPC分类号： H01L33/20
摘要： Integrated lenses are fabricated on LED devices by chemical etching mesas through mask openings which are non-circular. The mask is removed and the mesas are then etched to form spherical lenses.
摘要翻译：通过化学蚀刻台面通过非圆形的掩模开口在LED器件上制造集成透镜。去除掩模，然后蚀刻台面以形成球面透镜。

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