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1. 发明授权

US08198529B2 Transparent conductive materials including cadmium stannate 有权
标题翻译：透明导电材料包括锡酸镉
公开(公告)号：US08198529B2
公开(公告)日：2012-06-12
申请号：US12434059
申请日：2009-05-01
申请人： Dale Roberts , John German , Keith J. Burrows , Benyamin Buller , Boil Pashmakov
发明人： Dale Roberts , John German , Keith J. Burrows , Benyamin Buller , Boil Pashmakov
IPC分类号： H01L31/0224
CPC分类号： C23C4/08 , B22D23/00 , B23K2101/34 , B23K2103/08 , B23K2103/172 , B23K2103/18 , C22C20/00 , C23C14/086 , C23C16/407 , H01L31/022466 , H01L31/1884 , Y02E10/50
摘要： A photovoltaic cell can include a transparent conductive layer including cadmium stannate.
摘要翻译：光伏电池可以包括包含锡酸镉的透明导电层。

2. 发明申请

US20090272437A1 Transparent Conductive Materials Including Cadmium Stannate 有权
标题翻译：透明导电材料包括锡酸镉
公开(公告)号：US20090272437A1
公开(公告)日：2009-11-05
申请号：US12434059
申请日：2009-05-01
申请人： Dale Roberts , John German , Keith J. Burrows , Benyamin Buller , Boil Pashmakov
发明人： Dale Roberts , John German , Keith J. Burrows , Benyamin Buller , Boil Pashmakov
IPC分类号： H01L31/04 , C23C14/34 , C23C4/08 , B22F3/02 , B22F3/04 , B22D23/00 , B23K31/02 , C01G19/02 , C23C14/56 , H01L31/18 , B30B13/00
CPC分类号： C23C4/08 , B22D23/00 , B23K2101/34 , B23K2103/08 , B23K2103/172 , B23K2103/18 , C22C20/00 , C23C14/086 , C23C16/407 , H01L31/022466 , H01L31/1884 , Y02E10/50
摘要： A photovoltaic cell can include a transparent conductive layer including cadmium stannate.
摘要翻译：光伏电池可以包括包含锡酸镉的透明导电层。

3. 发明申请

US20100319775A1 Method and Apparatus for Annealing a Deposited Cadmium Stannate Layer 审中-公开
标题翻译：退火沉积的锡酸镉层的方法和装置
公开(公告)号：US20100319775A1
公开(公告)日：2010-12-23
申请号：US12819654
申请日：2010-06-21
申请人： Scott Mills , Dale Roberts , David Eaglesham , Benyamin Buller , Boil Pashmakov , Zhibo Zhao , Yu Yang
发明人： Scott Mills , Dale Roberts , David Eaglesham , Benyamin Buller , Boil Pashmakov , Zhibo Zhao , Yu Yang
IPC分类号： H01L31/0296 , H01L31/18
CPC分类号： H01L31/022466 , H01L21/02551 , H01L21/02568 , H01L21/02631 , H01L31/073 , H01L31/1884 , Y02E10/543 , Y02P70/521
摘要： A method for manufacturing a multi-layered structure can include annealing a stack, where the annealing can include heating the stack in the presence of an inert gas, and where the stack includes a layer including cadmium and tin.
摘要翻译：制造多层结构的方法可以包括对堆叠进行退火，其中退火可以包括在存在惰性气体的情况下加热堆叠，并且其中堆叠包括包含镉和锡的层。

4. 发明申请

US20120247553A1 PHOTOVOLTAIC DEVICE WITH BUFFER LAYER 审中-公开
标题翻译：具有缓冲层的光电器件
公开(公告)号：US20120247553A1
公开(公告)日：2012-10-04
申请号：US13430156
申请日：2012-03-26
申请人： Keith J. Burrows , Annette Krisko , Boil Pashmakov , Harshad Patil , Yu Yang , Zhibo Zhao
发明人： Keith J. Burrows , Annette Krisko , Boil Pashmakov , Harshad Patil , Yu Yang , Zhibo Zhao
IPC分类号： H01L31/0224 , H01L31/18
CPC分类号： H01L31/1864 , H01L31/022466 , H01L31/0296 , H01L31/0392 , H01L31/073 , H01L31/1884 , Y02E10/543 , Y02P70/521
摘要： A method of manufacturing a structure can include forming a buffer layer on a transparent conductive oxide layer, where the buffer layer includes a layer including zinc and tin, and the transparent conductive oxide layer includes a layer including cadmium and tin.
摘要翻译：制造结构的方法可以包括在透明导电氧化物层上形成缓冲层，其中缓冲层包括含锌和锡的层，透明导电氧化物层包括含有镉和锡的层。

5. 发明申请

US20110041917A1 Doped Transparent Conductive Oxide 审中-公开
标题翻译：掺杂透明导电氧化物
公开(公告)号：US20110041917A1
公开(公告)日：2011-02-24
申请号：US12860115
申请日：2010-08-20
申请人： Douglas Dauson , Scott Mills , Boil Pashmakov , Dale Roberts , Zhibo Zhao
发明人： Douglas Dauson , Scott Mills , Boil Pashmakov , Dale Roberts , Zhibo Zhao
IPC分类号： H01L31/04 , H01L31/0352
CPC分类号： H01L31/0392 , H01L31/022466 , H01L31/0296 , H01L31/03925 , H01L31/073 , H01L31/1884 , Y02E10/543 , Y02P70/521
摘要： A solar cell with a doped transparent conductive oxide layer is disclosed. The doped transparent conductive oxide layer can improve the efficiency of CdTe-based or other kinds of solar cells.
摘要翻译：公开了具有掺杂的透明导电氧化物层的太阳能电池。掺杂的透明导电氧化物层可以提高CdTe基或其他种类的太阳能电池的效率。

6. 发明申请

US20120115274A1 Plasma Deposition of Amorphous Semiconductors at Microwave Frequencies 审中-公开
标题翻译：微波频率下非晶半导体的等离子体沉积
公开(公告)号：US20120115274A1
公开(公告)日：2012-05-10
申请号：US13355541
申请日：2012-01-22
申请人： Stanford R Ovshinsky , David Strand , Patrick Klersy , Boil Pashmakov
发明人： Stanford R Ovshinsky , David Strand , Patrick Klersy , Boil Pashmakov
IPC分类号： H01L31/18
CPC分类号： C23C16/511 , C23C16/24 , C23C16/545 , H01L21/02425 , H01L21/02532 , H01L21/02592 , H01L21/0262
摘要： Apparatus and method for plasma deposition of thin film photovoltaic materials at microwave frequencies. The apparatus inhibits deposition on windows or other microwave transmission elements that couple microwave energy to deposition species. The apparatus includes a microwave applicator with conduits passing therethrough that carry deposition species. The applicator transfers microwave energy to the deposition species to transform them to a reactive state conducive to formation of a thin film material. The conduits physically isolate deposition species that would react to form a thin film material at the point of microwave power transfer. The deposition species are separately energized and swept away from the point of power transfer to prevent thin film deposition. The invention allows for the ultrafast formation of silicon-containing amorphous semiconductors that exhibit high mobility, low porosity, little or no Staebler-Wronski degradation, and low defect concentration.
摘要翻译：微波等离子体沉积薄膜光伏材料的设备和方法。该装置抑制在将微波能量耦合到沉积物质的窗口或其它微波传输元件上的沉积。该装置包括带有通过其的导管的微波施加器，其携带沉积物质。施加器将微波能量传递到沉积物质以将它们转变成有助于形成薄膜材料的反应状态。导管物理隔离在微波功率传递点反应以形成薄膜材料的沉积物质。沉积物质分开通电并从功率传递点扫除，以防止薄膜沉积。本发明允许超快速地形成显示高迁移率，低孔隙率，很少或没有Staebler-Wronski降解和低缺陷浓度的含硅非晶半导体。

7. 发明授权

US06723421B2 Semiconductor with coordinatively irregular structures 失效
标题翻译：具有协调不规则结构的半导体
公开(公告)号：US06723421B2
公开(公告)日：2004-04-20
申请号：US09971881
申请日：2001-10-05
申请人： Stanford R. Ovshinsky , Boil Pashmakov , David V. Tsu
发明人： Stanford R. Ovshinsky , Boil Pashmakov , David V. Tsu
IPC分类号： B32B326
CPC分类号： C23C16/24 , H01L21/02529 , H01L21/02532 , H01L21/0262 , H01L21/02661 , H01L29/12 , H01L29/1604 , H01L31/03682 , H01L31/03762 , H01L31/1816 , H01L31/202 , H01L31/208 , Y02E10/546 , Y02E10/548 , Y02P70/521 , Y10T428/249956 , Y10T428/249957 , Y10T428/249961 , Y10T428/249967 , Y10T428/249979
摘要： A non-single crystalline semiconductor material includes coordinatively irregular structures characterized by distorted chemical bonding, reduced dimensionality and novel electronic properties. A process for forming the material permits variation of the size, concentration and spatial distribution of coordinatively irregular structures. The electronic properties of the material can be changed by controlling the characteristics of the coordinatively irregular structures.
摘要翻译：非单晶半导体材料包括以失真化学键合为特征的协调不规则结构，尺寸降低和新颖的电子性能。形成材料的方法允许协调不规则结构的尺寸，浓度和空间分布的变化。可以通过控制协调不规则结构的特性来改变材料的电子特性。

8. 发明授权

US5933365A Memory element with energy control mechanism 失效
标题翻译：具有能量控制机制的记忆元件
公开(公告)号：US5933365A
公开(公告)日：1999-08-03
申请号：US878870
申请日：1997-06-19
申请人： Patrick Klersy , Boil Pashmakov , Wolodymyr Czubatyj , Sergey Kostylev , Stanford R. Ovshinsky
发明人： Patrick Klersy , Boil Pashmakov , Wolodymyr Czubatyj , Sergey Kostylev , Stanford R. Ovshinsky
IPC分类号： G11C17/00 , G11C11/56 , G11C16/02 , G11C19/08 , H01L27/24 , H01L45/00 , H01L47/00 , G11C11/00
CPC分类号： H01L45/1293 , G11C11/56 , G11C11/5678 , G11C13/0004 , H01L27/2463 , H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/144 , H01L45/1616 , H01L45/1625
摘要： An electrically operated, directly overwritable memory element comprising a volume of memory material having at least two electrical resistance values. The volume of memory material can be set to one of the resistance values in response to a selected electrical input signal without the need to be set to a specific starting or erased resistance value. The memory element includes resistive layers for controlling the distribution of electrical energy within the memory material, heating layers for transferring heat energy into the memory material, and thermal insulation layers for reducing the loss of heat energy from the memory material.
摘要翻译：一种电操作的直接可覆写的存储元件，包括具有至少两个电阻值的一定体积的存储材料。可以响应于所选择的电输入信号将存储器材料的体积设置为电阻值中的一个，而不需要将其设置为特定的起始或擦除电阻值。存储元件包括用于控制存储材料内的电能分布的电阻层，用于将热能传递到存储材料中的加热层，以及用于减少来自存储材料的热能损失的绝热层。

9. 发明授权

US5912839A Universal memory element and method of programming same 失效
标题翻译：通用存储元件和编程方法相同
公开(公告)号：US5912839A
公开(公告)日：1999-06-15
申请号：US102887
申请日：1998-06-23
申请人： Stanford R. Ovshinsky , Boil Pashmakov
发明人： Stanford R. Ovshinsky , Boil Pashmakov
IPC分类号： G11C11/34 , G11C11/56 , G11C16/02 , G11C16/10 , H01L27/24 , G11C11/00
CPC分类号： G11C11/5678 , G11C13/0004 , G11C13/004 , G11C13/0069 , G11C11/54 , G11C2013/0078 , H01L27/2409 , H01L45/06 , H01L45/1233 , H01L45/141 , H01L45/144
摘要： Method of programming Ovonic memory multistate-digital multibit memory elements, and use thereof for neural networks and data storage. The device is programmed by applying an energy pulse which is insufficient to switch the memory element from said high resistance state to said low resistance state, but sufficient to modify said memory material such that accumulation of additional energy pulses causes the memory element to switch from said high resistance state to said low resistance state.
摘要翻译：编程方法Ovonic存储器多数位数字多位存储元件，以及其用于神经网络和数据存储的方法。通过施加不足以将存储元件从所述高电阻状态切换到所述低电阻状态的能量脉冲来编程所述装置，但是足以修改所述存储材料，使得附加能量脉冲的累积导致存储元件从所述高电阻状态到所述低电阻状态。

10. 发明授权

US07529123B2 Method of operating a multi-terminal electronic device 有权
标题翻译：操作多终端电子设备的方法
公开(公告)号：US07529123B2
公开(公告)日：2009-05-05
申请号：US11451740
申请日：2006-06-13
申请人： Stanford R. Ovshinsky , Boil Pashmakov
发明人： Stanford R. Ovshinsky , Boil Pashmakov
IPC分类号： G11C11/21
CPC分类号： G11C13/0004 , H01L45/06 , H01L45/1206 , H01L45/1233 , H01L45/144
摘要： A method of operating a multi-terminal electronic device. The device includes an active material in electrical communication with three or more electrical terminals. The active material is able to undergo a transformation from one state to another state, where the two states differ in resistance. The method includes the step of providing energy between one pair of terminals of the device, where the provided energy effects a change in the state of the active material adjacent to one or more other terminals of the device. In one embodiment, energy is applied between a first terminal and a second terminal of a three-terminal device and the state of the active material adjacent to the third terminal is altered. In one embodiment, energy is applied in the form of electrical energy and the active material is a phase change material that undergoes a transformation from one structural state to another structural state. The two structural states may include different volume fractions of a crystalline phase and an amorphous phase.
摘要翻译：一种操作多终端电子设备的方法。该装置包括与三个或更多个电气端子电连通的活性材料。活性材料能够经历从一个状态到另一个状态的转变，其中两个状态的阻力不同。该方法包括在设备的一对端子之间提供能量的步骤，其中所提供的能量影响与设备的一个或多个其他端子相邻的活性材料的状态的变化。在一个实施例中，能量被施加在三端子装置的第一端子和第二端子之间，并且与第三端子相邻的活性材料的状态被改变。在一个实施例中，能量以电能的形式施加，并且活性材料是经历从一个结构状态到另一个结构状态的转变的相变材料。两个结构状态可以包括结晶相和非晶相的不同体积分数。

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