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1. 发明授权

US4845050A Method of making mo/tiw or w/tiw ohmic contacts to silicon 失效
标题翻译：制造硅/钨丝或w / tiw欧姆接触硅的方法
公开(公告)号：US4845050A
公开(公告)日：1989-07-04
申请号：US121183
申请日：1987-11-16
申请人： Manjin J. Kim , Dale M. Brown , Simon S. Cohen , Bernard Gorowitz , Richard J. Saia
发明人： Manjin J. Kim , Dale M. Brown , Simon S. Cohen , Bernard Gorowitz , Richard J. Saia
IPC分类号： H01L21/285 , H01L21/768
CPC分类号： H01L21/28512 , H01L21/76879 , Y10S148/003
摘要： A conductive member consisting of a first conductor of an alloy of titanium and tungsten and a second conductor of a refractory metal such as molybdenum is sintered to a conductive member of silicon to a temperature in the range of 600.degree. C. to 650.degree. C. in a reducing atmosphere to form a low resistance contact.
摘要翻译：将由钛和钨的合金的第一导体和诸如钼的难熔金属的第二导体组成的导电构件烧结到硅的导电构件至600℃至650℃的温度。在还原气氛中形成低电阻接触。

2. 发明授权

US4824802A Method of filling interlevel dielectric via or contact holes in multilevel VLSI metallization structures 失效
标题翻译：在多电平VLSI金属化结构中填充层间电介质通孔或接触孔的方法
公开(公告)号：US4824802A
公开(公告)日：1989-04-25
申请号：US104002
申请日：1987-10-02
申请人： Dale M. Brown , Bernard Gorowitz , Richard J. Saia
发明人： Dale M. Brown , Bernard Gorowitz , Richard J. Saia
IPC分类号： H01L21/768 , H01L21/283 , H01L21/312
CPC分类号： H01L21/7684 , H01L21/76877
摘要： A method compatible with very large scale integrated circuit fabrication processes is employed to provide an electrical connection between conductive layers separated by an insulative layer in integrated circuit devices. An intermediary metal such as molybdenum or tungsten is deposited by one or more methods so as to fill an opening in the insulative layer. A planarization resist may be applied on the substrate and the resulting configuration is planarizingly etched down to the insulative layer so as to provide a metal plug conductive layers. Deposition is by sputtering, evaporation, or by either selective or non-selective chemical vapor deposition. The process and structure provided herein significantly alleviates step coverage problems associated with aluminum and like materials which do not readily penetrate small VLSI circuit openings.
摘要翻译：采用与大规模集成电路制造工艺兼容的方法来提供由集成电路器件中的绝缘层隔开的导电层之间的电连接。通过一种或多种方法沉积诸如钼或钨的中间金属，以便填充绝缘层中的开口。可以在衬底上施加平坦化抗蚀剂，并将所得结构平坦化地蚀刻到绝缘层上，以提供金属插头导电层。通过溅射，蒸发或通过选择性或非选择性化学气相沉积沉积。本文提供的方法和结构显着地减轻了与不容易穿透小型VLSI电路开口的铝和类似材料相关的步骤覆盖问题。

3. 发明授权

US4871617A Ohmic contacts and interconnects to silicon and method of making same 失效
标题翻译：欧姆接触和与硅的互连及其制造方法
公开(公告)号：US4871617A
公开(公告)日：1989-10-03
申请号：US595800
申请日：1984-04-02
申请人： Manjin J. Kim , Dale M. Brown , Simon S. Cohen , Bernard Gorowitz , Richard J. Saia
发明人： Manjin J. Kim , Dale M. Brown , Simon S. Cohen , Bernard Gorowitz , Richard J. Saia
IPC分类号： H01L21/285 , H01L21/768
CPC分类号： H01L21/28512 , H01L21/76879 , Y10T428/12528 , Y10T428/12597 , Y10T428/12826 , Y10T428/1284
摘要： A conductive member consisting of a first conductor of an alloy of titanium and tungsten and a second conductor of a refractory metal such as molybdenum is sintered to a conductive member of silicon of low resistivity to form a low resistance contact therewith.
摘要翻译：由钛和钨的合金的第一导体和诸如钼的难熔金属的第二导体组成的导电构件被烧结到具有低电阻率的硅的导电构件以与其形成低电阻接触。

4. 发明授权

US5257496A Combustion control for producing low NO.sub.x emissions through use of flame spectroscopy 失效
标题翻译：燃烧控制通过使用火焰光谱法生产低NOx排放
公开(公告)号：US5257496A
公开(公告)日：1993-11-02
申请号：US878933
申请日：1992-05-05
申请人： Dale M. Brown , Bernard Gorowitz
发明人： Dale M. Brown , Bernard Gorowitz
IPC分类号： F01D21/00 , F23N1/02 , F23N5/00 , F23N5/08 , F02C9/28
CPC分类号： F01D21/003 , F23N5/003 , F23N5/082 , F23N1/02 , F23N2041/20 , Y02T50/677
摘要： Combustion in a gas turbine is controlled through use of flame spectroscopy in order to achieve low NO.sub.x emissions in the exhaust. By monitoring the combustion flame in the turbine to determine intensity of non-infrared spectral lines, and dynamically adjusting the fuel/air ratio of the fuel mixture such that this intensity remains below a predetermined level associated with a desired low level of NO.sub.x emissions, the engine produces significantly reduced NO.sub.x emissions in its exhaust but at a sufficiently high combustion flame temperature to avoid any undue risk of flame-out, thereby assuring stable, safe and reliable operation.
摘要翻译：通过使用火焰光谱法来控制燃气轮机中的燃烧，以便在排气中实现低NOx排放。通过监测涡轮机中的燃烧火焰以确定非红外光谱线的强度，并且动态地调节燃料混合物的燃料/空气比，使得该强度保持低于与期望的低水平的NOx排放相关联的预定水平，发动机在其排气中产生显着减少的NOx排放，但是在足够高的燃烧火焰温度下，以避免任何不适当的熄火风险，从而确保稳定，安全和可靠的操作。

5. 发明授权

US4933742A Metallization contact system for large scale integrated circuits 失效
标题翻译：大型集成电路金属化接触系统
公开(公告)号：US4933742A
公开(公告)日：1990-06-12
申请号：US151045
申请日：1988-02-01
申请人： Dale M. Brown , Bernard Gorowitz , Ronald H. Wilson
发明人： Dale M. Brown , Bernard Gorowitz , Ronald H. Wilson
IPC分类号： H01L21/285 , H01L21/768 , H01L23/532
CPC分类号： H01L21/76895 , H01L21/28562 , H01L21/28568 , H01L23/53257 , H01L2924/0002
摘要： A contact metal such as tungsten, platinum silicide or palladium silicide is selectively deposited or formed on the semiconductor substrate portion of an integrated circuit chip. The metallization pattern for the circuit makes contact with the contact metal at the bottom of a contact opening or via, rather than contacting the substrate directly. Thus, the interconnection metal makes contact to the semiconductor surface through an intermediate contact metal so as to provide decreased contact resistance. This permits narrower interconnect metallization patterns so as to facilitate the construction of denser integrated circuits. In the present invention, therefore, metal framing of the contact hole is not employed.
摘要翻译：在集成电路芯片的半导体衬底部分上选择性地沉积或形成诸如钨，硅化铂或硅化钯的接触金属。电路的金属化图案与接触开口或通孔的底部的接触金属接触，而不是直接接触衬底。因此，互连金属通过中间接触金属与半导体表面接触，从而提供降低的接触电阻。这允许更窄的互连金属化图案，以便于构建更致密的集成电路。因此，在本发明中，不使用接触孔的金属框架。

6. 发明授权

US5303684A Combustion control for producing low NO.sub.x emissions through use of flame spectroscopy 失效
标题翻译：燃烧控制通过使用火焰光谱法生产低NOx排放
公开(公告)号：US5303684A
公开(公告)日：1994-04-19
申请号：US47936
申请日：1993-04-19
申请人： Dale M. Brown , Bernard Gorowitz
发明人： Dale M. Brown , Bernard Gorowitz
IPC分类号： F01D21/00 , F23N1/02 , F23N5/00 , F23N5/08 , F02P5/10 , F02D41/14 , G01L23/22 , G01M15/00
CPC分类号： F01D21/003 , F23N5/003 , F23N5/082 , F23N1/02 , F23N2041/20 , Y02T50/677
摘要： Combustion in a gas turbine is controlled through use of flame spectroscopy in order to achieve low NO.sub.x emissions in the exhaust. By monitoring the combustion flame in the turbine to determine intensity of non-infrared spectral lines, and dynamically adjusting the fuel/air ratio of the fuel mixture such that this intensity remains below a predetermined level associated with a desired low level of NO.sub.x emissions, the engine produces significantly reduced NO.sub.x emissions in its exhaust but at a sufficiently high combustion flame temperature to avoid any undue risk of flame-out, thereby assuring stable, safe and reliable operation.
摘要翻译：通过使用火焰光谱法来控制燃气轮机中的燃烧，以便在排气中实现低NOx排放。通过监测涡轮机中的燃烧火焰以确定非红外光谱线的强度，并且动态地调节燃料混合物的燃料/空气比，使得该强度保持低于与期望的低水平的NOx排放相关联的预定水平，发动机在其排气中产生显着减少的NOx排放，但是在足够高的燃烧火焰温度下，以避免任何不适当的熄火风险，从而确保稳定，安全和可靠的操作。

7. 发明授权

US06784430B2 Interdigitated flame sensor, system and method 失效
标题翻译：交错式火焰传感器，系统及方法
公开(公告)号：US06784430B2
公开(公告)日：2004-08-31
申请号：US10277940
申请日：2002-10-23
申请人： Kevin S. Matocha , Jeffrey B. Fedison , James W. Kretchmer , Dale M. Brown , Peter M. Sandvik
发明人： Kevin S. Matocha , Jeffrey B. Fedison , James W. Kretchmer , Dale M. Brown , Peter M. Sandvik
IPC分类号： H01L2714
CPC分类号： G01J5/0014 , G01J1/0488 , G01J1/42 , G01J5/602 , H04M3/382 , H04M3/42314 , H04M3/4234
摘要： A flame sensor for combustion flame temperature determination comprises elongated extensions that are positioned with parallel interdigitated longitudinal axis with respect to one another. An optical spectrometer comprises the sensor and a system comprises the sensor. A method for combustion flame temperature determination comprises obtaining a first photodiode signal and a second photodiode signal by using photodiode devices comprising photodiodes with elongated extending interdigitated digits. A method of fabricating a flame sensor for combustion flame temperature determination, comprises forming first and second photodiodes with elongated extending interdigitated digits.
摘要翻译：用于燃烧火焰温度测定的火焰传感器包括细长延伸部，其相对于彼此以平行的叉指纵轴线定位。光谱仪包括传感器，系统包括传感器。一种用于燃烧火焰温度测定的方法包括通过使用包括具有细长延伸的叉指位的光电二极管的光电二极管器件来获得第一光电二极管信号和第二光电二极管信号。一种制造用于燃烧火焰温度测定的火焰传感器的方法，包括：形成第一和第二光电二极管，其具有细长延伸的叉指位数。

8. 发明授权

US06768326B2 SiC photodiode detectors for radiation detection applications 有权
标题翻译：用于辐射检测应用的SiC光电二极管检测器
公开(公告)号：US06768326B2
公开(公告)日：2004-07-27
申请号：US09682636
申请日：2001-10-01
申请人： Dale M. Brown , Donald T. McGrath , Charles David Greskovich , Robert Joseph Lyons
发明人： Dale M. Brown , Donald T. McGrath , Charles David Greskovich , Robert Joseph Lyons
IPC分类号： G01R31302
CPC分类号： G01T1/2018
摘要： A radiation detector includes: a scintillator which produces UV photons in response to receiving radiation from a radiation producing source; and, a wide bandgap semiconductor device sensitive to the UV photons produced by the scintillator. The semiconductor device produces an electric signal as a function of the amount of UV photons incident thereon. Preferably, the electric signal is then measure, recorded and/or otherwise analyzed.
摘要翻译：辐射检测器包括：闪烁体，其响应于接收来自辐射产生源的辐射而产生UV光子; 以及对由闪烁体产生的UV光子敏感的宽带隙半导体器件。半导体器件产生作为入射在其上的UV光子的量的函数的电信号。优选地，然后测量，记录和/或以其他方式分析电信号。

9. 发明授权

US5467185A Emissions control for internal combustion engine 失效
标题翻译：内燃机排放控制
公开(公告)号：US5467185A
公开(公告)日：1995-11-14
申请号：US276123
申请日：1994-07-15
申请人： William E. Engeler , Dale M. Brown
发明人： William E. Engeler , Dale M. Brown
IPC分类号： G01J5/00 , F02D35/02 , F02D41/14 , F02D45/00 , G01M15/04 , G01M15/10 , G01M15/00 , F02P5/145
CPC分类号： F02D35/022 , F02D35/025 , F02D41/008 , F02D41/1451 , G01M15/048 , G01M15/10
摘要： Respective SiC (silicon carbide) photodiode sensors are used to measure flame temperature at each cylinder of an internal combustion engine, and information generated by the SiC photodiode sensors is used to control the fuel injection in a feedback loop to control individual cylinder flame temperature and combustion.
摘要翻译：使用各种SiC（碳化硅）光电二极管传感器来测量内燃机的每个气缸的火焰温度，并且使用由SiC光电二极管传感器产生的信息来控制反馈环路中的燃料喷射以控制单个气缸火焰温度和燃烧。

10. 发明授权

US5187380A Low capacitance X-ray radiation detector 失效
标题翻译：低电容X射线辐射探测器
公开(公告)号：US5187380A
公开(公告)日：1993-02-16
申请号：US865515
申请日：1992-04-09
申请人： Gerald J. Michon , Dale M. Brown , Marvin Garfinkel , Dominic A. Cusano
发明人： Gerald J. Michon , Dale M. Brown , Marvin Garfinkel , Dominic A. Cusano
IPC分类号： A61B6/03 , G01T1/24 , H01L27/14 , H01L27/144 , H01L31/0232 , H01L31/0352 , H01L31/09 , H01L31/115 , H01L31/118
CPC分类号： H01L31/115 , H01L27/1443 , H01L31/02322 , H01L31/03529 , H01L31/1185 , Y02E10/50
摘要： A low capacitance radiation detector comprises a monocrystalline silicon substrate heavily doped to N type conductivity with a more lightly doped N type conductivity epitaxial layer formed on the substrate. A plurality of heavily doped N type upper surface layer segments are formed in the epitaxial layer. A patterned region of the epitaxial layer, heavily doped to P type conductivity and in the shape of parallel stripes joined at each end by a respective stripe perpendicular to the parallel stripes, is formed in the epitaxial layer and situated between adjacent ones of the upper surface layer segments, with each stripe extending into the epitaxial layer deeper than, and separated from, the upper surface layer segments so as to form a minority charge carrier-collecting PN junction with the epitaxial layer. The parallel stripes are spaced apart from each other by a distance smaller than or comparable to the minority charge carrier recombination diffusion length for the epitaxial layer, and the epitaxial layer thickness is smaller than or comparable to the minority charge carrier recombination diffusion length. In a second embodiment, the epitaxial layer has beveled edges and the heavily doped N type upper surface layer segments formed in the epitaxial layer extend over the beveled edges.
摘要翻译：低电容辐射检测器包括重掺杂到N型导电性的单晶硅衬底，在衬底上形成更轻掺杂的N型导电外延层。在外延层中形成多个重掺杂的N型上表面层段。在外延层中形成外延层的图案化区域，其重掺杂为P型导电性，并且在每一端由垂直于平行条纹的相应条带连接的平行条形状，并且位于相邻的上表面之间每个条带延伸到外延层中比上表面层段更深且分离，以便与外延层形成少数电荷载流子收集PN结。平行条纹彼此间隔开距离外延层的少数电荷载流子复合扩散长度的距离或相当于外延层厚度小于或与少数电荷载流子复合扩散长度相当的距离。在第二实施例中，外延层具有倾斜边缘，并且形成在外延层中的重掺杂N型上表面层段在倾斜边缘上延伸。

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