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1. 发明授权

US08125580B2 Liquid crystal display apparatus 有权
标题翻译：液晶显示装置
公开(公告)号：US08125580B2
公开(公告)日：2012-02-28
申请号：US12430385
申请日：2009-04-27
申请人： Daisuke Takama , Go Yamanaka , Ryoichi Ito , Koji Noguchi , Masanobu Ikeda
发明人： Daisuke Takama , Go Yamanaka , Ryoichi Ito , Koji Noguchi , Masanobu Ikeda
IPC分类号： G02F1/1333
CPC分类号： G02F1/13338 , G02F2001/13312 , G06F3/0421
摘要： Disclosed herein is a liquid crystal display apparatus, including: a liquid crystal panel having a pixel region in which first and second electrodes apply an electric field to a liquid crystal layer to display an image; the liquid crystal panel including a photo-sensor element having a light receiving face at which the photo-sensor element receives incident light through the liquid crystal layer in the pixel region to produce received light data; at least one of the first and second electrodes being formed in a region of the pixel region other than a light receiving face corresponding region of the pixel region which corresponds to the light receiving face of the photo-sensor element.
摘要翻译：本发明公开了一种液晶显示装置，包括：具有像素区域的液晶面板，其中第一和第二电极向液晶层施加电场以显示图像; 所述液晶面板包括具有受光面的光传感器元件，所述光传感器元件在所述光传感器元件处接收通过所述像素区域中的所述液晶层的入射光以产生接收光数据; 所述第一和第二电极中的至少一个形成在所述像素区域的除了与所述光传感器元件的光接收面对应的像素区域的受光面对应区域以外的区域中。

2. 发明申请

US20090268132A1 LIQUID CRYSTAL DISPLAY APPARATUS 有权
标题翻译：液晶显示装置
公开(公告)号：US20090268132A1
公开(公告)日：2009-10-29
申请号：US12430385
申请日：2009-04-27
申请人： Daisuke Takama , Go Yamanaka , Ryoichi Ito , Koji Noguchi , Masanobu Ikeda
发明人： Daisuke Takama , Go Yamanaka , Ryoichi Ito , Koji Noguchi , Masanobu Ikeda
IPC分类号： G02F1/133 , G02F1/1335
CPC分类号： G02F1/13338 , G02F2001/13312 , G06F3/0421
摘要： Disclosed herein is a liquid crystal display apparatus, including: a liquid crystal panel having a pixel region in which first and second electrodes apply an electric field to a liquid crystal layer to display an image; the liquid crystal panel including a photo-sensor element having a light receiving face at which the photo-sensor element receives incident light through the liquid crystal layer in the pixel region to produce received light data; at least one of the first and second electrodes being formed in a region of the pixel region other than a light receiving face corresponding region of the pixel region which corresponds to the light receiving face of the photo-sensor element.
摘要翻译：本发明公开了一种液晶显示装置，包括：具有像素区域的液晶面板，其中第一和第二电极向液晶层施加电场以显示图像; 所述液晶面板包括具有受光面的光传感器元件，所述光传感器元件在所述光传感器元件处接收通过所述像素区域中的所述液晶层的入射光以产生接收光数据; 所述第一和第二电极中的至少一个形成在所述像素区域的除了与所述光传感器元件的光接收面对应的像素区域的受光面对应区域以外的区域中。

3. 发明申请

US20090159901A1 DISPLAY 有权
标题翻译：显示
公开(公告)号：US20090159901A1
公开(公告)日：2009-06-25
申请号：US12331262
申请日：2008-12-09
申请人： Masanobu Ikeda , Ryoichi Ito , Daisuke Takama , Kenta Seki , Natsuki Otani
发明人： Masanobu Ikeda , Ryoichi Ito , Daisuke Takama , Kenta Seki , Natsuki Otani
IPC分类号： H01L33/00
CPC分类号： G02F1/1362 , G02F2001/13312 , G06F3/0412 , H01L27/12
摘要： A display includes: a substrate having a pixel region and a sensor region in which photo-sensor parts are formed; an illuminating section operative to illuminate the substrate from one surface side of the substrate; a thin film photodiode disposed in the sensor region, having at least a P-type semiconductor region and an N-type semiconductor region, and operative to receive light incident from the other surface side of the substrate; and a metallic film formed on the one surface side of the substrate so as to face the thin film photodiode through an insulator film, operative to restrain light generated from the illuminating section from being directly incident on the thin film photodiode from the one surface side, and fixed to a predetermined potential, wherein in the thin film photodiode, the width of the P-type semiconductor region and the width of the N-type semiconductor region are different from each other.
摘要翻译：显示器包括：具有像素区域的基板和形成光电传感器部件的传感器区域; 照明部，用于从所述基板的一个表面侧照射所述基板; 设置在所述传感器区域中的薄膜光电二极管，至少具有P型半导体区域和N型半导体区域，并且可操作以接收从所述衬底的另一表面侧入射的光; 以及金属膜，其形成在基板的一个表面侧上，以便通过绝缘膜面对薄膜光电二极管，其功能是抑制从照明部分产生的光从一个表面侧直接入射到薄膜光电二极管上，并固定在预定电位上，其中在薄膜光电二极管中，P型半导体区域的宽度和N型半导体区域的宽度彼此不同。

4. 发明授权

US07999259B2 Display device having a photodiode whose p region has an edge width different than that of the n region 有权
标题翻译：显示装置具有p区域的边缘宽度不同于n区域的边缘宽度的光电二极管
公开(公告)号：US07999259B2
公开(公告)日：2011-08-16
申请号：US12331262
申请日：2008-12-09
申请人： Masanobu Ikeda , Ryoichi Ito , Daisuke Takama , Kenta Seki , Natsuki Otani
发明人： Masanobu Ikeda , Ryoichi Ito , Daisuke Takama , Kenta Seki , Natsuki Otani
IPC分类号： H01L31/14
CPC分类号： G02F1/1362 , G02F2001/13312 , G06F3/0412 , H01L27/12
摘要： A display includes: a substrate having a pixel region and a sensor region in which photo-sensor parts are formed; an illuminating section operative to illuminate the substrate from one surface side of the substrate; a thin film photodiode disposed in the sensor region, having at least a P-type semiconductor region and an N-type semiconductor region, and operative to receive light incident from the other surface side of the substrate; and a metallic film formed on the one surface side of the substrate so as to face the thin film photodiode through an insulator film, operative to restrain light generated from the illuminating section from being directly incident on the thin film photodiode from the one surface side, and fixed to a predetermined potential, wherein in the thin film photodiode, the width of the P-type semiconductor region and the width of the N-type semiconductor region are different from each other.
摘要翻译：显示器包括：具有像素区域的基板和形成光电传感器部件的传感器区域; 照明部，用于从所述基板的一个表面侧照射所述基板; 设置在所述传感器区域中的薄膜光电二极管，至少具有P型半导体区域和N型半导体区域，并且可操作以接收从所述衬底的另一表面侧入射的光; 以及金属膜，其形成在基板的一个表面侧上，以便通过绝缘膜面对薄膜光电二极管，其功能是抑制从照明部分产生的光从一个表面侧直接入射到薄膜光电二极管上，并固定在预定电位上，其中在薄膜光电二极管中，P型半导体区域的宽度和N型半导体区域的宽度彼此不同。

5. 发明授权

US07787082B2 Photosensor and display device 有权
标题翻译：光电传感器和显示设备
公开(公告)号：US07787082B2
公开(公告)日：2010-08-31
申请号：US12263851
申请日：2008-11-03
申请人： Ryoichi Ito , Go Yamanaka
发明人： Ryoichi Ito , Go Yamanaka
IPC分类号： G02F1/133 , H01L31/0232
CPC分类号： H01L31/105 , G02F1/13318 , G02F2201/58 , G06F3/0412 , H01L27/1214 , H01L31/0216
摘要： A photosensor including a semiconductor thin film having a light receiving portion includes the following elements. A substrate has a recess with an inclined side wall having a forward tapered shape. A reflective material layer is disposed along the recess of the substrate. An insulating layer covers the substrate having thereon the reflective material layer. The semiconductor thin film is disposed on the insulating layer so as to cross the recess. The light receiving portion of the semiconductor thin film is disposed above the recess.
摘要翻译：包括具有光接收部分的半导体薄膜的光电传感器包括以下元件。基板具有具有倾斜侧壁的凹部，该倾斜侧壁具有正锥形形状。反射材料层沿着基板的凹部设置。绝缘层覆盖其上具有反射材料层的基板。半导体薄膜设置在绝缘层上，以便穿过凹部。半导体薄膜的受光部设置在凹部的上方。

6. 发明申请

US20090141224A1 PHOTOSENSOR AND DISPLAY DEVICE 有权
标题翻译：照相机和显示设备
公开(公告)号：US20090141224A1
公开(公告)日：2009-06-04
申请号：US12263851
申请日：2008-11-03
申请人： Ryoichi Ito , Go Yamanaka
发明人： Ryoichi Ito , Go Yamanaka
IPC分类号： G02F1/133 , H01L31/0232
CPC分类号： H01L31/105 , G02F1/13318 , G02F2201/58 , G06F3/0412 , H01L27/1214 , H01L31/0216
摘要： A photosensor including a semiconductor thin film having a light receiving portion includes the following elements. A substrate has a recess with an inclined side wall having a forward tapered shape. A reflective material layer is disposed along the recess of the substrate. An insulating layer covers the substrate having thereon the reflective material layer. The semiconductor thin film is disposed on the insulating layer so as to cross the recess. The light receiving portion of the semiconductor thin film is disposed above the recess.
摘要翻译：包括具有光接收部分的半导体薄膜的光电传感器包括以下元件。基板具有具有倾斜侧壁的凹部，该倾斜侧壁具有正锥形形状。反射材料层沿着基板的凹部设置。绝缘层覆盖其上具有反射材料层的基板。半导体薄膜设置在绝缘层上，以便穿过凹部。半导体薄膜的受光部设置在凹部的上方。

7. 发明申请

US20090159893A1 LIGHT-RECEIVING ELEMENT AND DISPLAY DEVICE 有权
标题翻译：光接收元件和显示设备
公开(公告)号：US20090159893A1
公开(公告)日：2009-06-25
申请号：US12331159
申请日：2008-12-09
申请人： Natsuki Otani , Tsutomu Tanaka , Masafumi Kunii , Masanobu Ikeda , Ryoichi Ito
发明人： Natsuki Otani , Tsutomu Tanaka , Masafumi Kunii , Masanobu Ikeda , Ryoichi Ito
IPC分类号： H01L31/0368 , H01L31/12
CPC分类号： H01L31/153 , G02F2201/58 , H01L27/14632 , H01L31/112
摘要： A light-receiving element includes: a first-conductivity-type semiconductor region configured to be formed over an element formation surface; a second-conductivity-type semiconductor region configured to be formed over the element formation surface; an intermediate semiconductor region configured to be formed over the element formation surface between the first-conductivity-type semiconductor region and the second-conductivity-type semiconductor region, and have an impurity concentration lower than impurity concentrations of the first-conductivity-type semiconductor region and the second-conductivity-type semiconductor region. The light-receiving element further includes: a first electrode configured to be electrically connected to the first-conductivity-type semiconductor region; a second electrode configured to be electrically connected to the second-conductivity-type semiconductor region; and a control electrode configured to be formed in an opposed area that exists on the element formation surface.
摘要翻译：光接收元件包括：第一导电型半导体区域，被配置为形成在元件形成表面上; 构造成形成在所述元件形成表面上的第二导电型半导体区域; 中间半导体区域，被配置为形成在第一导电型半导体区域和第二导电型半导体区域之间的元件形成表面之上，并且具有低于第一导电类型半导体区域的杂质浓度的杂质浓度和第二导电型半导体区域。光接收元件还包括：第一电极，被配置为电连接到第一导电型半导体区域; 第二电极，其被配置为电连接到所述第二导电型半导体区域; 以及控制电极，其被配置为形成在存在于所述元件形成表面上的相对区域中。

8. 发明申请

US20110043471A1 TOUCH SENSOR METHODS AND APPARATUS 审中-公开
标题翻译：触摸传感器方法和设备
公开(公告)号：US20110043471A1
公开(公告)日：2011-02-24
申请号：US12851766
申请日：2010-08-06
申请人： Michiru Senda , Yoshiharu Nakajima , Keiichiro Ishihara , Tsutomu Tanaka , Makoto Takatoku , Masanobu Ikeda , Ryoichi Ito
发明人： Michiru Senda , Yoshiharu Nakajima , Keiichiro Ishihara , Tsutomu Tanaka , Makoto Takatoku , Masanobu Ikeda , Ryoichi Ito
IPC分类号： G06F3/041
CPC分类号： G06F3/0412 , G06F3/042 , G06F2203/04103
摘要： Touch sensor methods and apparatus are provided. A first photodiode includes an i-region of a first length. A second photodiode includes an i-region with a second length. A sensing component including a capacitive element is operably coupled to the first photodiode and the second photodiode. The first length of the i-region of the first photodiode is different than the second length of the i-region of the second photodiode.
摘要翻译：提供触摸传感器的方法和设备。第一光电二极管包括第一长度的i区域。第二光电二极管包括具有第二长度的i区。包括电容元件的感测部件可操作地耦合到第一光电二极管和第二光电二极管。第一光电二极管的i区域的第一长度不同于第二光电二极管的i区域的第二长度。

9. 发明授权

US07915648B2 Light-receiving element and display device 有权
标题翻译：光接收元件和显示装置
公开(公告)号：US07915648B2
公开(公告)日：2011-03-29
申请号：US12331159
申请日：2008-12-09
申请人： Natsuki Otani , Tsutomu Tanaka , Masafumi Kunii , Masanobu Ikeda , Ryoichi Ito
发明人： Natsuki Otani , Tsutomu Tanaka , Masafumi Kunii , Masanobu Ikeda , Ryoichi Ito
IPC分类号： H01L27/148
CPC分类号： H01L31/153 , G02F2201/58 , H01L27/14632 , H01L31/112
摘要： A light-receiving element includes: a first-conductivity-type semiconductor region configured to be formed over an element formation surface; a second-conductivity-type semiconductor region configured to be formed over the element formation surface; an intermediate semiconductor region configured to be formed over the element formation surface between the first-conductivity-type semiconductor region and the second-conductivity-type semiconductor region, and have an impurity concentration lower than impurity concentrations of the first-conductivity-type semiconductor region and the second-conductivity-type semiconductor region. The light-receiving element further includes: a first electrode configured to be electrically connected to the first-conductivity-type semiconductor region; a second electrode configured to be electrically connected to the second-conductivity-type semiconductor region; and a control electrode configured to be formed in an opposed area that exists on the element formation surface.
摘要翻译：光接收元件包括：第一导电型半导体区域，被配置为形成在元件形成表面上; 构造成形成在所述元件形成表面上的第二导电型半导体区域; 中间半导体区域，被配置为形成在第一导电型半导体区域和第二导电型半导体区域之间的元件形成表面之上，并且具有低于第一导电类型半导体区域的杂质浓度的杂质浓度和第二导电型半导体区域。光接收元件还包括：第一电极，被配置为电连接到第一导电型半导体区域; 第二电极，其被配置为电连接到所述第二导电型半导体区域; 以及控制电极，其被配置为形成在存在于所述元件形成表面上的相对区域中。

10. 发明申请

US20120007988A1 IMAGING DEVICE, DISPLAY-IMAGING DEVICE, AND ELECTRONIC EQUIPMENT 审中-公开
标题翻译：成像装置，显示成像装置和电子设备
公开(公告)号：US20120007988A1
公开(公告)日：2012-01-12
申请号：US13176262
申请日：2011-07-05
申请人： Masanobu Ikeda , Ryoichi Ito , Keiichiro Ishihara , Yoshikazu Sasaki
发明人： Masanobu Ikeda , Ryoichi Ito , Keiichiro Ishihara , Yoshikazu Sasaki
IPC分类号： H04N5/335 , H04N5/33
CPC分类号： G06F3/0421 , G02F1/13338 , G02F2001/13312 , G06F3/0412 , H01L27/3269
摘要： Disclosed herein is an imaging device including: a plurality of photodetecting elements arranged on a substrate, each having a first semiconductor layer for the channel region; and a plurality of driving elements arranged on the substrate, each having a second semiconductor layer for the channel region, wherein the first and second semiconductor layers each are a crystallized semiconductor layer, the first and second semiconductor layers each are approximately equal in thickness and impurity concentration, and the first and second semiconductor layers each have an average trap level density no higher than 2.0×1017 (cm−3) which is an average value of trap level density obtained by the FE (Field Effect) method within the range of intrinsic Fermi level Ei ±0.2 eV.
摘要翻译：本文公开了一种成像装置，包括：多个受光元件，其布置在基板上，每个具有用于沟道区的第一半导体层; 以及布置在所述基板上的多个驱动元件，每个驱动元件具有用于沟道区的第二半导体层，其中所述第一和第二半导体层各自为结晶半导体层，所述第一和第二半导体层的厚度近似相等，并且杂质浓度，并且第一和第二半导体层各自具有不高于2.0×1017（cm-3）的平均陷阱浓度密度，其是通过FE（场效应）方法在内在的范围内获得的陷阱浓度密度的平均值费米等级Ei±0.2 eV。

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