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1. 发明申请

US20130069185A1 MAGNETIC MEMORY ELEMENT AND NONVOLATILE MEMORY DEVICE 有权
标题翻译：磁记忆元件和非易失性存储器件
公开(公告)号：US20130069185A1
公开(公告)日：2013-03-21
申请号：US13416724
申请日：2012-03-09
申请人： Daisuke SAIDA , Minoru Amano , Yuichi Ohsawa , Junichi Ito , Hiroaki Yoda
发明人： Daisuke SAIDA , Minoru Amano , Yuichi Ohsawa , Junichi Ito , Hiroaki Yoda
IPC分类号： H01L29/82
CPC分类号： H01F10/3286 , G11C11/16 , G11C11/161 , G11C11/1659 , H01F10/3236 , H01F10/329 , H01L43/08
摘要： According to one embodiment, a magnetic memory element includes a stacked body including first and second stacked units stacked with each other. The first stacked unit includes first and second ferromagnetic layers and a first nonmagnetic layer provided therebetween. The second stacked unit includes third and fourth ferromagnetic layers and a second nonmagnetic layer provided therebetween. Magnetization of the second and third ferromagnetic layers are variable. Magnetizations of the first and fourth ferromagnetic layers are fixed in a direction perpendicular to the layer surfaces. A cross-sectional area of the third ferromagnetic layer is smaller than a cross-sectional area of the first stacked unit when cut along a plane perpendicular to the stacking direction.
摘要翻译：根据一个实施例，磁存储元件包括堆叠体，其包括彼此堆叠的第一和第二堆叠单元。第一堆叠单元包括第一和第二铁磁层和设置在它们之间的第一非磁性层。第二堆叠单元包括第三和第四铁磁层和设置在它们之间的第二非磁性层。第二和第三铁磁层的磁化是可变的。第一和第四铁磁层的磁化在垂直于层表面的方向固定。当沿垂直于堆叠方向的平面切割时，第三铁磁层的横截面面积小于第一堆叠单元的横截面面积。

2. 发明授权

US08878317B2 Magnetoresistive element and magnetic memory 有权
标题翻译：磁阻元件和磁记忆体
公开(公告)号：US08878317B2
公开(公告)日：2014-11-04
申请号：US13210678
申请日：2011-08-16
申请人： Tadaomi Daibou , Minoru Amano , Daisuke Saida , Junichi Ito , Yuichi Ohsawa , Chikayoshi Kamata , Saori Kashiwada , Hiroaki Yoda
发明人： Tadaomi Daibou , Minoru Amano , Daisuke Saida , Junichi Ito , Yuichi Ohsawa , Chikayoshi Kamata , Saori Kashiwada , Hiroaki Yoda
IPC分类号： H01L29/82 , H01L43/10 , H01F10/32 , H01L43/08 , H01L27/22
CPC分类号： H01L43/02 , H01F10/3254 , H01F10/3272 , H01F10/3286 , H01F10/329 , H01L27/228 , H01L43/08 , H01L43/10
摘要： A magnetoresistive element according to an embodiment includes: a first to third ferromagnetic layers, and a first nonmagnetic layer, the first and second ferromagnetic layers each having an axis of easy magnetization in a direction perpendicular to a film plane, the third ferromagnetic layer including a plurality of ferromagnetic oscillators generating rotating magnetic fields of different oscillation frequencies from one another. Spin-polarized electrons are injected into the first ferromagnetic layer and induce precession movements in the plurality of ferromagnetic oscillators of the third ferromagnetic layer by flowing a current between the first and third ferromagnetic layers, the rotating magnetic fields are generated by the precession movements and are applied to the first ferromagnetic layer, and at least one of the rotating magnetic fields assists a magnetization switching in the first ferromagnetic layer.
摘要翻译：根据实施例的磁阻元件包括：第一至第三铁磁层和第一非磁性层，第一和第二铁磁层各自在垂直于膜平面的方向上具有容易磁化的轴，所述第三铁磁层包括多个铁磁振荡器产生彼此不同振荡频率的旋转磁场。旋转极化电子被注入到第一铁磁层中并通过在第一和第三铁磁层之间流动电流而引起第三铁磁层的多个铁磁振荡器中的进动运动，旋转磁场由进动运动产生，并且是施加到第一铁磁层，并且至少一个旋转磁场有助于第一铁磁层中的磁化切换。

3. 发明授权

US08716817B2 Magnetic memory element and nonvolatile memory device 有权
标题翻译：磁存储元件和非易失性存储器件
公开(公告)号：US08716817B2
公开(公告)日：2014-05-06
申请号：US13416724
申请日：2012-03-09
申请人： Daisuke Saida , Minoru Amano , Yuichi Ohsawa , Junichi Ito , Hiroaki Yoda
发明人： Daisuke Saida , Minoru Amano , Yuichi Ohsawa , Junichi Ito , Hiroaki Yoda
IPC分类号： H01L29/82
CPC分类号： H01F10/3286 , G11C11/16 , G11C11/161 , G11C11/1659 , H01F10/3236 , H01F10/329 , H01L43/08
摘要： According to one embodiment, a magnetic memory element includes a stacked body including first and second stacked units stacked with each other. The first stacked unit includes first and second ferromagnetic layers and a first nonmagnetic layer provided therebetween. The second stacked unit includes third and fourth ferromagnetic layers and a second nonmagnetic layer provided therebetween. Magnetization of the second and third ferromagnetic layers are variable. Magnetizations of the first and fourth ferromagnetic layers are fixed in a direction perpendicular to the layer surfaces. A cross-sectional area of the third ferromagnetic layer is smaller than a cross-sectional area of the first stacked unit when cut along a plane perpendicular to the stacking direction.
摘要翻译：根据一个实施例，磁存储元件包括堆叠体，其包括彼此堆叠的第一和第二堆叠单元。第一堆叠单元包括第一和第二铁磁层和设置在它们之间的第一非磁性层。第二堆叠单元包括第三和第四铁磁层和设置在它们之间的第二非磁性层。第二和第三铁磁层的磁化是可变的。第一和第四铁磁层的磁化在垂直于层表面的方向固定。当沿垂直于堆叠方向的平面切割时，第三铁磁层的横截面面积小于第一堆叠单元的横截面面积。

4. 发明申请

US20120241827A1 MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY 有权
标题翻译：磁性元件和磁记忆
公开(公告)号：US20120241827A1
公开(公告)日：2012-09-27
申请号：US13210678
申请日：2011-08-16
申请人： Tadaomi DAIBOU , Minoru Amano , Daisuke Saida , Junichi Ito , Yuichi Ohsawa , Chikayoshi Kamata , Saori Kashiwada , Hiroaki Yoda
发明人： Tadaomi DAIBOU , Minoru Amano , Daisuke Saida , Junichi Ito , Yuichi Ohsawa , Chikayoshi Kamata , Saori Kashiwada , Hiroaki Yoda
IPC分类号： H01L27/22 , H01L43/10 , H01L43/02
CPC分类号： H01L43/02 , H01F10/3254 , H01F10/3272 , H01F10/3286 , H01F10/329 , H01L27/228 , H01L43/08 , H01L43/10
摘要： A magnetoresistive element according to an embodiment includes: a first to third ferromagnetic layers, and a first nonmagnetic layer, the first and second ferromagnetic layers each having an axis of easy magnetization in a direction perpendicular to a film plane, the third ferromagnetic layer including a plurality of ferromagnetic oscillators generating rotating magnetic fields of different oscillation frequencies from one another. Spin-polarized electrons are injected into the first ferromagnetic layer and induce precession movements in the plurality of ferromagnetic oscillators of the third ferromagnetic layer by flowing a current between the first and third ferromagnetic layers, the rotating magnetic fields are generated by the precession movements and are applied to the first ferromagnetic layer, and at least one of the rotating magnetic fields assists a magnetization switching in the first ferromagnetic layer.
摘要翻译：根据实施例的磁阻元件包括：第一至第三铁磁层和第一非磁性层，第一和第二铁磁层各自在垂直于膜平面的方向上具有容易磁化的轴，所述第三铁磁层包括多个铁磁振荡器产生彼此不同振荡频率的旋转磁场。旋转极化电子被注入到第一铁磁层中并通过在第一和第三铁磁层之间流动电流而引起第三铁磁层的多个铁磁振荡器中的进动运动，旋转磁场由进动运动产生，并且是施加到第一铁磁层，并且至少一个旋转磁场有助于第一铁磁层中的磁化切换。

5. 发明授权

US08716034B2 Method of manufacturing magnetic memory 失效
标题翻译：制造磁记忆体的方法
公开(公告)号：US08716034B2
公开(公告)日：2014-05-06
申请号：US13226868
申请日：2011-09-07
申请人： Yuichi Ohsawa , Shigeki Takahashi , Junichi Ito , Daisuke Saida , Kyoichi Suguro , Hiroaki Yoda
发明人： Yuichi Ohsawa , Shigeki Takahashi , Junichi Ito , Daisuke Saida , Kyoichi Suguro , Hiroaki Yoda
IPC分类号： H01L21/00
CPC分类号： H01L43/12 , H01L29/82
摘要： According to one embodiment, a method of manufacturing a magnetic memory, the method includes forming a first magnetic layer having a variable magnetization, forming a tunnel barrier layer on the first magnetic layer, forming a second magnetic layer on the tunnel barrier layer, the second magnetic layer having an invariable magnetization, forming a hard mask layer as a mask on the second magnetic layer, patterning the second magnetic layer by using the mask of the hard mask layer, and executing a GCIB-irradiation by using the mask of the hard mask layer, after the patterning.
摘要翻译：根据一个实施例，一种制造磁存储器的方法，该方法包括形成具有可变磁化强度的第一磁性层，在第一磁性层上形成隧道势垒层，在隧道势垒层上形成第二磁性层，具有不变磁化的磁性层，在第二磁性层上形成硬掩模层作为掩模，通过使用硬掩模层的掩模对第二磁性层进行构图，并使用硬掩模的掩模执行GCIB照射层，图案后。

6. 发明授权

US09082961B2 Method of manufacturing multilayer film 有权
标题翻译：多层膜的制造方法
公开(公告)号：US09082961B2
公开(公告)日：2015-07-14
申请号：US13226960
申请日：2011-09-07
申请人： Yuichi Ohsawa , Shigeki Takahashi , Junichi Ito , Daisuke Saida , Kyoichi Suguro , Hiroaki Yoda
发明人： Yuichi Ohsawa , Shigeki Takahashi , Junichi Ito , Daisuke Saida , Kyoichi Suguro , Hiroaki Yoda
IPC分类号： H01L43/12 , H01L29/82
CPC分类号： H01L43/12 , H01L29/82
摘要： According to one embodiment, a method of manufacturing a multilayer film, the method includes forming a first layer, forming a second layer on the first layer, and transcribing a crystal information of one of the first and second layers to the other one of the first and second layers by executing a GCIB-irradiation to the second layer.
摘要翻译：根据一个实施例，一种制造多层膜的方法，该方法包括：形成第一层，在第一层上形成第二层，以及将第一层和第二层之一的晶体信息转录到第一层中的另一层并且通过对第二层执行GCIB照射来产生第二层。

7. 发明授权

US08508979B2 Magnetic recording element and nonvolatile memory device 失效
标题翻译：磁记录元件和非易失性存储器件
公开(公告)号：US08508979B2
公开(公告)日：2013-08-13
申请号：US13228040
申请日：2011-09-08
申请人： Daisuke Saida , Minoru Amano , Junichi Ito , Yuichi Ohsawa , Saori Kashiwada , Chikayoshi Kamata , Tadaomi Daibou
发明人： Daisuke Saida , Minoru Amano , Junichi Ito , Yuichi Ohsawa , Saori Kashiwada , Chikayoshi Kamata , Tadaomi Daibou
IPC分类号： G11C11/00
CPC分类号： G11B5/66 , G11C11/161 , H01L27/228 , H01L43/08
摘要： According to one embodiment, a magnetic recording element includes a stacked body. The stacked body includes a first and a second stacked unit. The first stacked unit includes first and second ferromagnetic layers and a first nonmagnetic layer. The first nonmagnetic layer is provided between the first and second ferromagnetic layers. The second stacked unit is stacked with the first stacked unit and includes third and fourth ferromagnetic layers and a second nonmagnetic layer. The fourth ferromagnetic layer is stacked with the third ferromagnetic layer. The second nonmagnetic layer is provided between the third and fourth ferromagnetic layers. An outer edge of the fourth ferromagnetic layer includes a portion outside an outer edge of the first stacked unit in a plane. A magnetization direction of the second ferromagnetic layer is determined by causing a spin-polarized electron and a rotating magnetic field to act on the second ferromagnetic layer.
摘要翻译：根据一个实施例，磁记录元件包括堆叠体。堆叠体包括第一和第二堆叠单元。第一堆叠单元包括第一和第二铁磁层和第一非磁性层。第一非磁性层设置在第一和第二铁磁层之间。第二堆叠单元与第一堆叠单元堆叠并且包括第三和第四铁磁层和第二非磁性层。第四铁磁层与第三铁磁层层叠。第二非磁性层设置在第三和第四铁磁层之间。第四铁磁层的外边缘包括平面内第一堆叠单元的外边缘外侧的部分。通过使自旋极化电子和旋转磁场作用于第二铁磁层来确定第二铁磁层的磁化方向。

8. 发明授权

US08488375B2 Magnetic recording element and nonvolatile memory device 有权
标题翻译：磁记录元件和非易失性存储器件
公开(公告)号：US08488375B2
公开(公告)日：2013-07-16
申请号：US13037592
申请日：2011-03-01
申请人： Daisuke Saida , Minoru Amano , Junichi Ito , Yuichi Ohsawa , Saori Kashiwada , Chikayoshi Kamata , Shigeki Takahashi
发明人： Daisuke Saida , Minoru Amano , Junichi Ito , Yuichi Ohsawa , Saori Kashiwada , Chikayoshi Kamata , Shigeki Takahashi
IPC分类号： G11C11/14
CPC分类号： H01L43/08 , G11C11/161 , G11C11/1659 , H01L27/228
摘要： According to one embodiment, a magnetic recording element includes a stacked body including a first stacked unit and a second stacked unit. The first stacked unit includes a first ferromagnetic layer, a second ferromagnetic layer and a first nonmagnetic layer. Magnetization of the first ferromagnetic layer is substantially fixed in a first direction being perpendicular to a first ferromagnetic layer surface. The second stacked unit includes a third ferromagnetic layer, a fourth ferromagnetic layer and a second nonmagnetic layer. Magnetization of the fourth ferromagnetic layer is substantially fixed in a second direction being perpendicular to a fourth ferromagnetic layer surface. The first direction is opposite to the second direction.
摘要翻译：根据一个实施例，磁记录元件包括包括第一堆叠单元和第二堆叠单元的堆叠体。第一堆叠单元包括第一铁磁层，第二铁磁层和第一非磁性层。第一铁磁层的磁化在垂直于第一铁磁层表面的第一方向上基本固定。第二堆叠单元包括第三铁磁层，第四铁磁层和第二非磁性层。第四铁磁层的磁化在垂直于第四铁磁层表面的第二方向上基本固定。第一方向与第二方向相反。

9. 发明申请

US20130070522A1 NONVOLATILE MEMORY DEVICE 有权
标题翻译：非易失性存储器件
公开(公告)号：US20130070522A1
公开(公告)日：2013-03-21
申请号：US13416076
申请日：2012-03-09
申请人： Daisuke Saida , Minoru Amano , Tazumi Nagasawa , Yuichi Ohsawa , Junichi Ito
发明人： Daisuke Saida , Minoru Amano , Tazumi Nagasawa , Yuichi Ohsawa , Junichi Ito
IPC分类号： G11C11/15
CPC分类号： G11C11/16 , G11C11/161 , G11C11/1659 , G11C11/1673 , G11C11/1675 , H01L27/228 , H01L43/08
摘要： According to one embodiment, a nonvolatile memory device includes a magnetic memory element and a control unit. The magnetic memory element includes a stacked body including first and second stacked units. The first stacked unit includes a first ferromagnetic layer having a magnetization fixed, a second ferromagnetic layer having a magnetization variable and a first nonmagnetic layer provided between the first and second ferromagnetic layers. The second includes a third ferromagnetic layer having a magnetization rorated by a passed current to produce oscillation, a fourth ferromagnetic layer having a magnetization fixed and a second nonmagnetic layer provided between the third and fourth ferromagnetic layers stacked with each other. A frequency of the oscillation changes in accordance with the direction of the magnetization of the second ferromagnetic layer. The control unit includes a reading unit reading out the magnetization of the second ferromagnetic layer.
摘要翻译：根据一个实施例，非易失性存储器件包括磁存储元件和控制单元。磁存储元件包括包括第一和第二堆叠单元的堆叠体。第一堆叠单元包括具有磁化固定的第一铁磁层，具有磁化变化的第二铁磁层和设置在第一和第二铁磁层之间的第一非磁性层。第二铁磁层具有通过通过的电流产生振荡的磁化的第三铁磁层，具有磁化固定的第四铁磁层和设置在彼此堆叠的第三和第四铁磁层之间的第二非磁性层。振荡的频率根据第二铁磁层的磁化方向而变化。控制单元包括读出第二铁磁层的磁化的读取单元。

10. 发明授权

US08576616B2 Magnetic element and nonvolatile memory device 失效
标题翻译：磁性元件和非易失性存储器件
公开(公告)号：US08576616B2
公开(公告)日：2013-11-05
申请号：US13227959
申请日：2011-09-08
申请人： Daisuke Saida , Minoru Amano , Junichi Ito , Yuichi Ohsawa , Saori Kashiwada , Chikayoshi Kamata , Tadaomi Daibou
发明人： Daisuke Saida , Minoru Amano , Junichi Ito , Yuichi Ohsawa , Saori Kashiwada , Chikayoshi Kamata , Tadaomi Daibou
IPC分类号： G11C11/00
CPC分类号： G11C11/161 , G11C11/1655 , G11C11/1659 , G11C11/1673 , G11C11/1675 , H01L27/228 , H01L43/08
摘要： According to one embodiment, a magnetic element includes first and second conductive layers, an intermediate interconnection, and first and second stacked units. The intermediate interconnection is provided between the conductive layers. The first stacked unit is provided between the first conductive layer and the interconnection, and includes first and second ferromagnetic layer and a first nonmagnetic layer provided between the first and second ferromagnetic layers. The second stacked unit is provided between the second conductive layer and the interconnection, and includes third and fourth ferromagnetic layers and a second nonmagnetic layer provided between the third and fourth ferromagnetic layers. A magnetization direction of the second ferromagnetic layer is determined by causing a spin-polarized electron and a magnetic field to act on the second ferromagnetic layer.
摘要翻译：根据一个实施例，磁性元件包括第一和第二导电层，中间互连以及第一和第二堆叠单元。中间互连设置在导电层之间。第一层叠单元设置在第一导电层和互连之间，并且包括第一和第二铁磁层和设置在第一和第二铁磁层之间的第一非磁性层。第二堆叠单元设置在第二导电层和互连之间，并且包括第三和第四铁磁层以及设置在第三和第四铁磁层之间的第二非磁性层。通过使自旋极化电子和磁场作用于第二铁磁层来确定第二铁磁层的磁化方向。

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