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    • 5. 发明申请
    • Semiconductor integrated circuit device
    • 半导体集成电路器件
    • US20050206427A1
    • 2005-09-22
    • US10912069
    • 2004-08-06
    • Yuichi YuasaShigemitsu TaharaDaisuke Katagiri
    • Yuichi YuasaShigemitsu TaharaDaisuke Katagiri
    • G06F15/78G11C5/00G11C11/16H01L21/822H01L27/04H03K5/1252
    • G11C11/16
    • There is provided a semiconductor integrated circuit device that enables an EMS-voltage withstanding margin to be significantly enhanced without increasing a chip-layout area etc. An input buffer section, a CR filter composed of a resistor and an electrostatic capacitor device, a Schmitt circuit, and a noise cancellation circuit are connected to a system control terminal of the semiconductor integrated circuit device. When a signal containing noise is inputted to the system control terminal, a peak of the noise is reduced by an input buffer composed of the Schmitt circuit provided in the input buffer section. Thereafter, the peak of the noise is further reduced by the CR filter. Subsequently, the signal passes through the Schmitt circuit, thereby being significantly removed.
    • 提供了一种半导体集成电路器件,其能够在不增加芯片布局面积等的情况下显着增强EMS耐压裕度。输入缓冲器部分,由电阻器和静电电容器器件组成的CR滤波器,施密特电路 ,并且噪声消除电路连接到半导体集成电路器件的系统控制端子。 当包含噪声的信号被输入到系统控制终端时,通过由输入缓冲器部分中提供的施密特电路组成的输入缓冲器来降低噪声的峰值。 此后,CR滤波器进一步降低了噪声的峰值。 随后,信号通过施密特电路,从而被明显地去除。
    • 6. 发明授权
    • Semiconductor integrated circuit and a burn-in method thereof
    • 半导体集成电路及其老化方法
    • US06777997B2
    • 2004-08-17
    • US10309183
    • 2002-12-04
    • Shigemitsu TaharaDaisuke KatagiriTakeshi ShimanukiMasashi Oshiba
    • Shigemitsu TaharaDaisuke KatagiriTakeshi ShimanukiMasashi Oshiba
    • H03L500
    • H03K19/018585H03K19/01855
    • The present invention realizes higher-speed external output operation synchronized with a clock signal from the viewpoint of prevention of output operation delay due to a level shift circuit and maintenance of a high breakdown voltage of an output buffer. A semiconductor integrated circuit includes a first circuit and a second circuit having a breakdown voltage higher than a breakdown voltage of the first circuit, and operation voltages of the first and second circuits can be made equal to each other or different from each other. The second circuit has a plurality of level shift circuits capable of shifting the level of an output of the first circuit in accordance with an operation voltage of the second circuit, a plurality of external output buffers receiving outputs of the level shift circuits, bypasses for bypassing an input of a predetermined level shift circuit to an input of a predetermined external output buffer, and a selecting circuit for selecting connection of either the predetermined level shift circuit or a bypass to an input of the predetermined external output buffer. In a use form in which the first and second circuits operate with a low voltage, the bypass is selected. In high-voltage operation and burn-in, the level shift circuits are selected.
    • 从防止由于电平移位电路的输出操作延迟和维持输出缓冲器的高击穿电压的观点来看,本发明实现了与时钟信号同步的更高速的外部输出操作。 半导体集成电路包括具有比第一电路的击穿电压高的击穿电压的第一电路和第二电路,并且可以使第一和第二电路的操作电压彼此相等或不同。 第二电路具有多个电平移位电路,能够根据第二电路的工作电压来移动第一电路的输出电平,接收电平移位电路的输出的多个外部输出缓冲器,用于旁路的旁路 将预定电平移位电路输入到预定的外部输出缓冲器的输入端,以及选择电路,用于选择预定电平移位电路或旁路中的任一者与预定外部输出缓冲器的输入端的连接。 在第一和第二电路以低电压工作的使用形式中,选择旁路。 在高压运行和老化期间,选择电平移位电路。