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1. 发明申请

US20100176456A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：US20100176456A1
公开(公告)日：2010-07-15
申请号：US12683050
申请日：2010-01-06
申请人： Daisuke Ikeno , Kazuaki Nakajima , Toshihiro Iizuka , Kenzo Manabe , Ichiro Yamamoto
发明人： Daisuke Ikeno , Kazuaki Nakajima , Toshihiro Iizuka , Kenzo Manabe , Ichiro Yamamoto
IPC分类号： H01L27/092 , H01L21/8238
CPC分类号： H01L21/823857 , H01L21/823864 , H01L29/518
摘要： A semiconductor device includes a semiconductor substrate including a P-type semiconductor region, and an N channel MOSFET formed in the P-type semiconductor region, the N channel MOSFET including an insulating film of silicon oxide film or silicon oxynitride film formed on the semiconductor substrate, a gate insulating film including hafnium and formed on the insulating film, a lanthanum oxide film having a film thickness not larger than a predetermined value and formed between the gate insulating film and insulating film, and a gate electrode including a titanium nitride film having a N/Ti atomic ratio less than 1.
摘要翻译：半导体器件包括包括P型半导体区域的半导体衬底和形成在P型半导体区域中的N沟道MOSFET，N沟道MOSFET包括形成在半导体衬底上的氧化硅膜或氧氮化硅膜的绝缘膜包括铪并形成在所述绝缘膜上的栅极绝缘膜，形成在所述栅极绝缘膜和绝缘膜之间的膜厚度不大于预定值的氧化镧膜，以及包括氮化钛膜的栅电极，所述氮化钛膜具有 N / Ti原子比小于1。

2. 发明申请

US20100065918A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：US20100065918A1
公开(公告)日：2010-03-18
申请号：US12561862
申请日：2009-09-17
申请人： Daisuke Ikeno , Tomonori Aoyama , Kazuaki Nakajima , Seiji Inumiya , Takashi Shimizu , Takuya Kobayashi
发明人： Daisuke Ikeno , Tomonori Aoyama , Kazuaki Nakajima , Seiji Inumiya , Takashi Shimizu , Takuya Kobayashi
IPC分类号： H01L27/092 , H01L21/8238
CPC分类号： H01L21/823807 , H01L21/823828
摘要： A semiconductor device includes a semiconductor substrate containing a p-type diffusion layer and an n-type diffusion layer which are separated by an element separation film; a gate insulating film formed on or above the p-type diffusion layer and the n-type diffusion layer of the semiconductor substrate, respectively; a gate electrode containing a metallic film and formed on the gate insulating film; a Ge inclusion formed at an interface between the gate insulating film and the metallic film; and a silicon-containing layer formed on the metallic film.
摘要翻译：半导体器件包括由元件分离膜分离的包含p型扩散层和n型扩散层的半导体衬底; 分别形成在所述p型扩散层和所述半导体衬底的n型扩散层上或之上的栅绝缘膜; 含有金属膜并形成在栅极绝缘膜上的栅电极; 形成在栅极绝缘膜和金属膜之间的界面处的Ge夹杂物; 以及形成在金属膜上的含硅层。

3. 发明授权

US08198155B2 Semiconductor device and method of manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US08198155B2
公开(公告)日：2012-06-12
申请号：US12693985
申请日：2010-01-26
申请人： Daisuke Ikeno , Tomonori Aoyama , Kazuaki Nakajima , Seiji Inumiya , Takashi Shimizu , Takuya Kobayashi
发明人： Daisuke Ikeno , Tomonori Aoyama , Kazuaki Nakajima , Seiji Inumiya , Takashi Shimizu , Takuya Kobayashi
IPC分类号： H01L21/8234 , H01L21/8238 , H01L29/51
CPC分类号： H01L21/823842 , H01L21/28088 , H01L21/823807 , H01L21/82385 , H01L29/1054 , H01L29/4966 , H01L29/513 , H01L29/517 , H01L29/6659
摘要： A semiconductor device according to an embodiment of the present invention includes an N-type transistor formed in a first region on a substrate, and a P-type transistor formed in a second region on the substrate. The device includes the substrate, a first gate insulation film formed on the substrate in the first and second regions, and containing silicon, a second gate insulation film formed on the first gate insulation film in the first region, and containing first metal and oxygen, a third gate insulation film formed on the first gate insulation film in the second region, and containing second metal different from the first metal and oxygen, a fourth gate insulation film formed on the second and third gate insulation films in the first and second regions, and containing hafnium, and a gate electrode layer formed on the fourth gate insulation film in the first and second regions, and containing metal and nitrogen, a thickness of the gate electrode layer formed in the second region being greater than a thickness of the gate electrode layer formed in the first region.
摘要翻译：根据本发明的实施例的半导体器件包括形成在衬底上的第一区域中的N型晶体管和形成在衬底上的第二区域中的P型晶体管。该器件包括衬底，形成在第一和第二区域的衬底上并含有硅的第一栅极绝缘膜，形成在第一区域中的第一栅极绝缘膜上并且包含第一金属和氧的第二栅极绝缘膜，形成在所述第二区域中的所述第一栅极绝缘膜上并且包含不同于所述第一金属和氧的第二金属的第三栅极绝缘膜，形成在所述第一和第二区域中的所述第二和第三栅极绝缘膜上的第四栅极绝缘膜，并且含有铪，以及形成在第一和第二区域中的第四栅极绝缘膜上并且包含金属和氮的栅极电极层，在第二区域中形成的栅电极层的厚度大于栅电极的厚度层形成在第一区域中。

4. 发明申请

US20100187612A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 失效
标题翻译：半导体器件及其制造方法
公开(公告)号：US20100187612A1
公开(公告)日：2010-07-29
申请号：US12693985
申请日：2010-01-26
申请人： Daisuke IKENO , Tomonori Aoyama , Kazuaki Nakajima , Seiji Inumiya , Takashi Shimizu , Takuya Kobayashi
发明人： Daisuke IKENO , Tomonori Aoyama , Kazuaki Nakajima , Seiji Inumiya , Takashi Shimizu , Takuya Kobayashi
IPC分类号： H01L27/092 , H01L21/8238
CPC分类号： H01L21/823842 , H01L21/28088 , H01L21/823807 , H01L21/82385 , H01L29/1054 , H01L29/4966 , H01L29/513 , H01L29/517 , H01L29/6659
摘要： A semiconductor device according to an embodiment of the present invention includes an N-type transistor formed in a first region on a substrate, and a P-type transistor formed in a second region on the substrate. The device includes the substrate, a first gate insulation film formed on the substrate in the first and second regions, and containing silicon, a second gate insulation film formed on the first gate insulation film in the first region, and containing first metal and oxygen, a third gate insulation film formed on the first gate insulation film in the second region, and containing second metal different from the first metal and oxygen, a fourth gate insulation film formed on the second and third gate insulation films in the first and second regions, and containing hafnium, and a gate electrode layer formed on the fourth gate insulation film in the first and second regions, and containing metal and nitrogen, a thickness of the gate electrode layer formed in the second region being greater than a thickness of the gate electrode layer formed in the first region.
摘要翻译：根据本发明的实施例的半导体器件包括形成在衬底上的第一区域中的N型晶体管和形成在衬底上的第二区域中的P型晶体管。该器件包括衬底，形成在第一和第二区域的衬底上并含有硅的第一栅极绝缘膜，形成在第一区域中的第一栅极绝缘膜上并且包含第一金属和氧的第二栅极绝缘膜，形成在所述第二区域中的所述第一栅极绝缘膜上并且包含不同于所述第一金属和氧的第二金属的第三栅极绝缘膜，形成在所述第一和第二区域中的所述第二和第三栅极绝缘膜上的第四栅极绝缘膜，并且含有铪，以及形成在第一和第二区域中的第四栅极绝缘膜上并且包含金属和氮的栅极电极层，在第二区域中形成的栅电极层的厚度大于栅电极的厚度层形成在第一区域中。

5. 发明授权

US08668243B2 Vehicle boundary layer air flow control structure 有权
标题翻译：车辆边界层气流控制结构
公开(公告)号：US08668243B2
公开(公告)日：2014-03-11
申请号：US13382467
申请日：2010-07-13
申请人： Satoshi Komiya , Kazuhito Sugimoto , Hirofumi Kondou , Yuichi Morinaka , Tomohiro Koyahata , Masato Inoue , Kenichiro Koizumi , Hitoshi Takagi , Yuji Ishihara , Kazuaki Nakajima
发明人： Satoshi Komiya , Kazuhito Sugimoto , Hirofumi Kondou , Yuichi Morinaka , Tomohiro Koyahata , Masato Inoue , Kenichiro Koizumi , Hitoshi Takagi , Yuji Ishihara , Kazuaki Nakajima
IPC分类号： B62D35/00
CPC分类号： B62D35/00 , B60Q1/0017
摘要： A vehicle boundary layer air flow control structure is provided with a vehicle body and a side view mirror. The vehicle body includes an exterior contoured surface with an air flow deflector. The side view mirror is attached to the vehicle body to provide a diagonally rearward direction to be viewed from a driver's seat. The air flow deflector has a downward air flow guiding surface provided in a vehicle body region of the exterior contoured surface of the vehicle body along which an air flow heading toward the side view mirror passes. The downward air flow guiding surface extends in an air flow direction of the air flow with respect to the side view mirror to divert the air flow underneath the side view mirror.
摘要翻译：车辆边界层气流控制结构设置有车体和侧视镜。车身包括具有空气导流板的外部轮廓表面。侧视镜附接到车体以提供从驾驶员座椅观察的斜向后方向。空气导流器具有设置在车身外部轮廓表面的车身区域中的朝向侧视镜通过的空气流的向下空气流引导表面。向下的空气流引导表面相对于侧视镜在空气流的空气流动方向上延伸以转移侧视镜下面的空气流。

6. 发明授权

US08441073B2 Semiconductor device and manufacturing method for the same 有权
公开(公告)号：US08441073B2
公开(公告)日：2013-05-14
申请号：US13137381
申请日：2011-08-10
申请人： Kazuaki Nakajima , Kyoichi Suguro
发明人： Kazuaki Nakajima , Kyoichi Suguro
IPC分类号： H01L21/8238
CPC分类号： H01L21/823842 , H01L21/28079 , H01L29/4958 , H01L29/66545 , H01L29/6656 , H01L29/6659 , H01L29/7833 , Y10S438/976
摘要： In a semiconductor substrate on which are formed an N-type MOS transistor and a P-type MOS transistor, the gate electrode of the N-type MOS transistor comprises a tungsten film, which makes contact with a gate insulation film, and the gate electrode of the P-type MOS transistor comprises a tungsten film, which makes contact with a gate insulation film, and the concentration of carbon contained in the former tungsten film is less than the concentration of carbon contained in the latter tungsten film.

7. 发明申请

US20130026783A1 FRONT UNDERFLOOR STRUCTURE OF VEHICLE 有权
标题翻译：车辆底部结构
公开(公告)号：US20130026783A1
公开(公告)日：2013-01-31
申请号：US13639211
申请日：2011-04-07
申请人： Takeshi Kakiuchi , Masahiro Ataka , Youhei Ogawa , Kazuaki Nakajima , Yuji Ishihara
发明人： Takeshi Kakiuchi , Masahiro Ataka , Youhei Ogawa , Kazuaki Nakajima , Yuji Ishihara
IPC分类号： B62D35/02
CPC分类号： B62D35/02 , Y02T10/88
摘要： A front underfloor structure of a vehicle includes front deflectors disposed forward of front tires, respectively. The front deflectors each include a front apex portion disposed at a position closer to the vehicle front than a leading edge surface of each of the front tires when straight, and disposed at a position closer to a vehicle center line than an inner surface of each of the front tires when straight; an outer end portion disposed at a position closer to the vehicle rear than the front apex portion, and disposed at a position outward in the vehicle width direction of the front apex portion; and a second flow redirection surface connecting the front apex portion and the outer end portion, and being configured such that, when struck by air traveling from the vehicle front, the second flow redirection surface redirects a flow of the traveling air outward in the vehicle.
摘要翻译：车辆的前地板结构包括分别设置在前轮胎前方的前偏转器。前导向器各自包括设置在比前轮胎的前边缘更靠近车辆前方的位置处的前顶部部分，其在直线时位于比每个前轮胎的内表面更靠近车辆中心线的位置前轮胎直线时; 设置在比前顶点更靠近车辆后方的位置，并且设置在前顶点部的车宽方向外侧的位置; 以及连接前顶点部和外端部的第二流向重定向面，并且被构造成当从车辆前方行进的空气撞击时，第二流向重定向面将行进空气的流动重新引导到车辆外部。

8. 发明授权

US08346868B2 Real-time web sharing system 有权
标题翻译：实时网络共享系统
公开(公告)号：US08346868B2
公开(公告)日：2013-01-01
申请号：US10536668
申请日：2003-11-25
申请人： Kazuaki Nakajima
发明人： Kazuaki Nakajima
IPC分类号： G06F15/16
CPC分类号： H04L29/06 , H04L67/02 , H04L67/34 , H04L69/329
摘要： The customer presses the Connect button (2240) on the customer terminal (1230). By this, a connection request to an operator terminal is notified to an operator terminal (1210) via the push sharing server (2100). On receiving this notification, the operator terminal (1210) changes the Respond button (2310) to the Incoming button. When the operator presses the Respond button (2310) on the operator web page (2300), the push sharing server (2100) transmits a difference notification command to the operator terminal (1210), and the operator terminal displays the same web page as the web page on the customer terminals (1230).
摘要翻译：客户按客户终端上的“连接”按钮（2240）（1230）。由此，通过推送共享服务器（2100）向操作者终端（1210）通知向操作者终端的连接请求。在接收到该通知时，操作员终端（1210）将响应按钮（2310）改变为传入按钮。当操作员按下操作员网页（2300）上的响应（Respond）按钮（2310）时，推送共享服务器（2100）向操作员终端（1210）发送差异通知命令，并且操作者终端显示与客户终端网页（1230）。

9. 发明授权

US08168522B2 Method for fabricating semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08168522B2
公开(公告)日：2012-05-01
申请号：US12718449
申请日：2010-03-05
申请人： Kazuaki Nakajima
发明人： Kazuaki Nakajima
IPC分类号： H01L21/44
CPC分类号： H01L29/78 , H01L21/28079 , H01L21/28194 , H01L21/823807 , H01L21/823835 , H01L21/823842 , H01L29/1054 , H01L29/4958 , H01L29/517
摘要： An aspect of the present disclosure, there is provided a method for fabricating a semiconductor device, including, forming a gate insulating film on a semiconductor substrate, forming a metal film on the gate insulating film, depositing a metal-silicon compound film on the metal film without exposing the semiconductor substrate into atmosphere after forming the metal film, forming a silicon film on the metal-silicon compound film, and etching the metal film, the metal-silicon compound film, and the silicon film.
摘要翻译：本发明的一个方面提供一种制造半导体器件的方法，包括在半导体衬底上形成栅极绝缘膜，在栅极绝缘膜上形成金属膜，在金属上沉积金属 - 硅化合物膜在形成金属膜之后不将半导体衬底暴露于大气中，在金属 - 硅化合物膜上形成硅膜，并蚀刻金属膜，金属 - 硅化合物膜和硅膜。

10. 发明授权

US07768076B2 Semiconductor device comprising an n-channel and p-channel MISFET 有权
标题翻译：包括n沟道和p沟道MISFET的半导体器件
公开(公告)号：US07768076B2
公开(公告)日：2010-08-03
申请号：US12113290
申请日：2008-05-01
申请人： Kazuaki Nakajima
发明人： Kazuaki Nakajima
IPC分类号： H01L29/78
CPC分类号： H01L21/823842 , H01L21/28079 , H01L21/823871 , H01L29/4958
摘要： A semiconductor device has an n-channel MISFET having first diffusion layers formed in a first region of a surface portion of a semiconductor substrate so as to sandwich a first channel region therebetween, a first gate insulating film formed on the first channel region, and a first gate electrode including a first metal layer formed on the first gate insulating film, and a first n-type polysilicon film formed on the first metal layer, and a p-channel MISFET having second diffusion layers containing boron as a dopant and formed in a second region of the surface portion of the semiconductor substrate so as to sandwich a second channel region therebetween, a second gate insulating film formed on the second channel region, and a second gate electrode including a second metal layer containing nitrogen or carbon and formed on the second gate insulating film and a second n-type polysilicon film formed on the second metal layer and having a boron concentration of not more than 5×1019 cm−3 in a portion adjacent an interface with the second metal layer.
摘要翻译：半导体器件具有n沟道MISFET，其具有形成在半导体衬底的表面部分的第一区域中的第一扩散层，以便夹在其间的第一沟道区域，形成在第一沟道区上的第一栅极绝缘膜，以及第一栅电极，包括形成在第一栅极绝缘膜上的第一金属层和形成在第一金属层上的第一n型多晶硅膜，以及具有第二扩散层的p沟道MISFET，所述第二扩散层含有硼作为掺杂剂，第二栅极绝缘膜形成在第二沟道区上，第二栅电极包括第二金属层，该第二金属层含有氮或碳，并形成在第二沟道区上，第二栅极绝缘膜和形成在第二金属层上并具有不大于5×10 19 cm -3的硼浓度的第二n型多晶硅膜在与第二金属层的界面相邻的部分。

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