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    • 2. 发明申请
    • Cooling block forming electrode
    • 冷却块形成电极
    • US20070210037A1
    • 2007-09-13
    • US11708677
    • 2007-02-21
    • Toshifumi IshidaDaisuke Hayashi
    • Toshifumi IshidaDaisuke Hayashi
    • B23K9/00
    • H05H1/46H01J37/32009H01J37/32724
    • The present invention is a cooling block that forms an electrode for generating a plasma for use in a plasma process, and includes a channel for a cooling liquid, the cooling block comprising: a first base material and a second base material respectively made of aluminum, at least one of the first and second base materials having a recess for forming a channel for a cooling liquid; and a diffusion bonding layer, in which zinc is diffused in aluminum, and an anti-corrosion layer of a zinc oxide film, the layers being formed by interposing zinc between the first and second base materials, and by bonding the first and second base materials with zinc interposed therebetween in a heating atmosphere containing oxygen.
    • 本发明是一种冷却块,其形成用于产生用于等离子体处理的等离子体的电极,并且包括用于冷却液体的通道,所述冷却块包括:分别由铝制成的第一基材和第二基材, 所述第一和第二基底材料中的至少一个具有用于形成用于冷却液体的通道的凹部; 以及锌在铝中扩散的扩散接合层和氧化锌膜的防腐蚀层,所述层通过在第一和第二基底材料之间插入锌而形成,并且通过将第一和第二基底材料 在含有氧的加热气氛中夹有锌。
    • 4. 发明授权
    • Cooling block forming electrode
    • 冷却块形成电极
    • US08319141B2
    • 2012-11-27
    • US12876597
    • 2010-09-07
    • Toshifumi IshidaDaisuke Hayashi
    • Toshifumi IshidaDaisuke Hayashi
    • B23K9/00F02M3/10F28F7/00
    • H05H1/46H01J37/32009H01J37/32724
    • The present invention is a cooling block that forms an electrode for generating a plasma for use in a plasma process, and includes a channel for a cooling liquid, the cooling block comprising: a first base material and a second base material respectively made of aluminum, at least one of the first and second base materials having a recess for forming a channel for a cooling liquid; and a diffusion bonding layer, in which zinc is diffused in aluminum, and an anti-corrosion layer of a zinc oxide film, the layers being formed by interposing zinc between the first and second base materials, and by bonding the first and second base materials with zinc interposed therebetween in a heating atmosphere containing oxygen.
    • 本发明是一种冷却块,其形成用于产生用于等离子体处理的等离子体的电极,并且包括用于冷却液体的通道,所述冷却块包括:分别由铝制成的第一基材和第二基材, 所述第一和第二基底材料中的至少一个具有用于形成用于冷却液体的通道的凹部; 以及锌在铝中扩散的扩散接合层和氧化锌膜的防腐蚀层,所述层通过在第一和第二基底材料之间插入锌而形成,并且通过将第一和第二基底材料 在含有氧的加热气氛中夹有锌。
    • 6. 发明申请
    • TEMPERATURE CONTROL DEVICE, TEMPERATURE CONTROL METHOD, AND SUBSTRATE PROCESSING APPARATUS
    • 温度控制装置,温度控制方法和基板处理装置
    • US20100240154A1
    • 2010-09-23
    • US12726602
    • 2010-03-18
    • Toshifumi Ishida
    • Toshifumi Ishida
    • H01L21/465
    • H01L21/67109H01L21/67103H01L21/67248
    • Provided is a temperature control device for controlling a temperature of a member to be exposed to plasma in a substrate processing apparatus. The substrate processing apparatus includes a mounting electrode for mounting a target substrate and a facing electrode positioned to face the mounting electrode, excites a processing gas supplied between the mounting electrode and the facing electrode into plasma, and performs a plasma process on the target substrate with the plasma. The temperature control device includes a heating layer configured to heat a heating target member, a heat insulating layer positioned in contact with an opposite surface to a heating layer's surface facing the heating target member, and a cooling layer positioned in contact with an opposite surface to a heat insulating layer's surface facing the heating layer.
    • 提供了一种用于控制在基板处理装置中暴露于等离子体的部件的温度的温度控制装置。 基板处理装置包括安装目标基板的安装电极和面对安装电极的面对电极,将在安装电极和对置电极之间供给的处理气体激发成等离子体,并对目标基板进行等离子体处理, 等离子体。 温度控制装置包括:加热层,被配置为加热加热目标构件;隔热层,其与与加热目标构件相对的加热层的表面的相对表面接触;以及冷却层,其与相对的表面 面向加热层的绝热层的表面。