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1. 发明授权

US08592887B2 Semiconductor storage device including a memory cell structure 有权
标题翻译：包括存储单元结构的半导体存储装置
公开(公告)号：US08592887B2
公开(公告)日：2013-11-26
申请号：US13332905
申请日：2011-12-21
申请人： Daina Inoue , Hidenobu Nagashima , Akira Yotsumoto
发明人： Daina Inoue , Hidenobu Nagashima , Akira Yotsumoto
IPC分类号： H01L29/788
CPC分类号： H01L27/11524 , H01L21/764
摘要： A semiconductor storage device includes an interlayer insulating film provided between select gate electrodes, a first fill material extending along upper portions of memory cell gate electrodes so as to cover air gaps residing between the memory cell gate electrodes, the first fill material extending along sidewalls of the select gate electrodes and sidewalls of the interlayer insulating film so as to define a recess above the first fill material extending along the sidewalls of the select gate electrodes and the sidewalls of the interlayer insulating film, a second fill material filling the recess above the first fill material, and a plurality of contacts formed through the interlayer insulating film, the contacts physically contacting each of device areas formed in a semiconductor substrate.
摘要翻译：半导体存储装置包括设置在选择栅电极之间的层间绝缘膜，沿着存储单元栅电极的上部延伸的第一填充材料，以覆盖位于存储单元栅电极之间的空气间隙，第一填充材料沿着所述选择栅极电极和所述层间绝缘膜的侧壁，以便限定沿所述选择栅电极的侧壁和所述层间绝缘膜的侧壁延伸的所述第一填充材料上方的凹部，填充所述第一填充材料上方的所述凹部的第二填充材料填充材料和通过层间绝缘膜形成的多个触点，触点物理接触形成在半导体衬底中的每个器件区域。

2. 发明申请

US20120256263A1 SEMICONDUCTOR STORAGE DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：半导体存储器件及其制造方法
公开(公告)号：US20120256263A1
公开(公告)日：2012-10-11
申请号：US13332905
申请日：2011-12-21
申请人： Daina INOUE , Hidenobu Nagashima , Akira Yotsumoto
发明人： Daina INOUE , Hidenobu Nagashima , Akira Yotsumoto
IPC分类号： H01L27/088 , H01L21/336
CPC分类号： H01L27/11524 , H01L21/764
摘要： A semiconductor storage device includes an interlayer insulating film provided between select gate electrodes, a first fill material extending along upper portions of memory cell gate electrodes so as to cover air gaps residing between the memory cell gate electrodes, the first fill material extending along sidewalls of the select gate electrodes and sidewalls of the interlayer insulating film so as to define a recess above the first fill material extending along the sidewalls of the select gate electrodes and the sidewalls of the interlayer insulating film, a second fill material filling the recess above the first fill material, and a plurality of contacts formed through the interlayer insulating film, the contacts physically contacting each of device areas formed in a semiconductor substrate.
摘要翻译：半导体存储装置包括设置在选择栅电极之间的层间绝缘膜，沿着存储单元栅电极的上部延伸的第一填充材料，以覆盖位于存储单元栅电极之间的空气间隙，第一填充材料沿着所述选择栅极电极和所述层间绝缘膜的侧壁，以便限定沿所述选择栅电极的侧壁和所述层间绝缘膜的侧壁延伸的所述第一填充材料上方的凹部，填充所述第一填充材料上方的所述凹部的第二填充材料填充材料和通过层间绝缘膜形成的多个触点，触点物理接触形成在半导体衬底中的每个器件区域。

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