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1. 发明授权

US07851129B2 Resist composition, resist pattern forming method and compound 有权
标题翻译：抗蚀剂组合物，抗蚀剂图案形成方法和化合物
公开(公告)号：US07851129B2
公开(公告)日：2010-12-14
申请号：US11718091
申请日：2005-09-30
申请人： Daiju Shiono , Taku Hirayama , Toshiyuki Ogata , Hideo Hada
发明人： Daiju Shiono , Taku Hirayama , Toshiyuki Ogata , Hideo Hada
IPC分类号： G03F7/00 , G03F7/004
CPC分类号： G03F7/0045 , G03F7/0392 , G03F7/0397 , Y10S430/106 , Y10S430/114
摘要： This resist composition is a resist composition containing a compound in which a portion or all of hydrogen atoms of phenolic hydroxyl groups in a polyhydric phenol compound (a) having two or more phenolic hydroxyl groups and having a molecular weight of 300 to 2,500 are substituted with at least one selected from the group consisting of acid dissociable dissolution inhibiting groups represented by the following general formulas (p1) and (p2) wherein R1 and R2 each independently represents a branched or cyclic alkyl group, and may contain a hetero atom in the structure; R3 represents a hydrogen atom or a lower alkyl group; and n′ represents an integer of 1 to 3.
摘要翻译：该抗蚀剂组合物是含有下述化合物的抗蚀剂组合物，其中具有两个以上酚羟基并且分子量为300〜2,500的多元酚化合物（a）中的酚羟基的一部分或全部氢原子被取代为选自由以下通式（p1）和（p2）表示的酸解离溶解抑制基团中的至少一种，其中R 1和R 2各自独立地表示支链或环状烷基，并且可以在结构中含有杂原子 ; R3表示氢原子或低级烷基; n'表示1〜3的整数。

2. 发明授权

US07943284B2 Compound, dissolution inhibitor, positive type resist composition, and method of forming resist pattern 失效
标题翻译：化合物，溶解抑制剂，正型抗蚀剂组合物和形成抗蚀剂图案的方法
公开(公告)号：US07943284B2
公开(公告)日：2011-05-17
申请号：US11911341
申请日：2006-04-17
申请人： Daiju Shiono , Taku Hirayama , Toshiyuki Ogata , Shogo Matsumaru , Hideo Hada
发明人： Daiju Shiono , Taku Hirayama , Toshiyuki Ogata , Shogo Matsumaru , Hideo Hada
IPC分类号： G03F7/004 , G03F7/30
CPC分类号： G03F7/0392 , C07J9/00 , G03F7/0045 , Y10S430/106
摘要： A positive type resist composition for forming a high resolution resist pattern and a method of forming a resist pattern are provided which use a low-molecular-weight material as a base component, and a compound and a dissolution inhibitor that are each suitable for the positive type resist composition. Here, the compound is a non-polymer having a molecular weight of 500 to 3000, and is decomposed under the action of an acid to produce two or more molecules of a decomposition product having a molecular weight of 200 or more; the dissolution inhibitor comprises the compound; the positive type resist composition comprises the compound and the acid generator component; and the method of forming a resist pattern uses the positive type resist composition.
摘要翻译：提供了用于形成高分辨抗蚀剂图案的正型抗蚀剂组合物和形成抗蚀剂图案的方法，其使用低分子量材料作为基础组分，并且化合物和溶解抑制剂各自适用于阳性型抗蚀剂组合物。这里，该化合物是分子量为500〜3000的非聚合物，在酸的作用下分解，生成分子量为200以上的分解产物的2个以上分子; 该溶解抑制剂包含该化合物; 正型抗蚀剂组合物包含化合物和酸产生剂组分; 并且形成抗蚀剂图案的方法使用正型抗蚀剂组合物。

3. 发明申请

US20090162781A1 RESIST COMPOSITION, RESIST PATTERN FORMING METHOD AND COMPOUND 有权
标题翻译：耐蚀组合物，抗蚀剂图案形成方法和化合物
公开(公告)号：US20090162781A1
公开(公告)日：2009-06-25
申请号：US11718091
申请日：2005-09-30
申请人： Daiju Shiono , Taku Hirayama , Toshiyuki Ogata , Hideo Hada
发明人： Daiju Shiono , Taku Hirayama , Toshiyuki Ogata , Hideo Hada
IPC分类号： G03F7/20 , G03F7/004 , C07C39/04 , C07C69/616 , C07C43/205
CPC分类号： G03F7/0045 , G03F7/0392 , G03F7/0397 , Y10S430/106 , Y10S430/114
摘要： This resist composition is a resist composition containing a compound in which a portion or all of hydrogen atoms of phenolic hydroxyl groups in a polyhydric phenol compound (a) having two or more phenolic hydroxyl groups and having a molecular weight of 300 to 2,500 are substituted with at least one selected from the group consisting of acid dissociable dissolution inhibiting groups represented by the following general formulas (p1) and (p2) wherein R1 and R2 each independently represents a branched or cyclic alkyl group, and may contain a hetero atom in the structure; R3 represents a hydrogen atom or a lower alkyl group; and n′ represents an integer of 1 to 3.
摘要翻译：该抗蚀剂组合物是含有下述化合物的抗蚀剂组合物，其中具有两个以上酚羟基并且分子量为300〜2,500的多元酚化合物（a）中的酚羟基的一部分或全部氢原子被取代为选自由以下通式（p1）和（p2）表示的酸解离溶解抑制基团中的至少一种，其中R 1和R 2各自独立地表示支链或环状烷基，并且可以在结构中含有杂原子 ; R3表示氢原子或低级烷基; n'表示1〜3的整数。

4. 发明申请

US20090081580A1 COMPOUND, DISSOLUTION INHIBITOR, POSITIVE TYPE RESIST COMPOSITION, AND METHOD OF FORMING RESIST PATTERN 失效
标题翻译：化合物，溶解抑制剂，积极类型抗蚀剂组合物和形成耐药性图案的方法
公开(公告)号：US20090081580A1
公开(公告)日：2009-03-26
申请号：US11911341
申请日：2006-04-17
申请人： Daiju Shiono , Taku Hirayama , Toshiyuki Ogata , Shogo Matsumaru , Hideo Hada
发明人： Daiju Shiono , Taku Hirayama , Toshiyuki Ogata , Shogo Matsumaru , Hideo Hada
IPC分类号： G03F7/004 , C07C69/74 , G03F7/20 , C07C69/76
CPC分类号： G03F7/0392 , C07J9/00 , G03F7/0045 , Y10S430/106
摘要： A positive type resist composition for forming a high resolution resist pattern and a method of forming a resist pattern are provided which use a low-molecular-weight material as a base component, and a compound and a dissolution inhibitor that are each suitable for the positive type resist composition. Here, the compound is a non-polymer having a molecular weight of 500 to 3000, and is decomposed under the action of an acid to produce two or more molecules of a decomposition product having a molecular weight of 200 or more; the dissolution inhibitor comprises the compound; the positive type resist composition comprises the compound and the acid generator component; and the method of forming a resist pattern uses the positive type resist composition.
摘要翻译：提供了用于形成高分辨抗蚀剂图案的正型抗蚀剂组合物和形成抗蚀剂图案的方法，其使用低分子量材料作为基础组分，并且化合物和溶解抑制剂各自适用于阳性型抗蚀剂组合物。这里，该化合物是分子量为500〜3000的非聚合物，在酸的作用下分解，生成分子量为200以上的分解产物的2个以上分子; 该溶解抑制剂包含该化合物; 正型抗蚀剂组合物包含化合物和酸产生剂组分; 并且形成抗蚀剂图案的方法使用正型抗蚀剂组合物。

5. 发明授权

US08304163B2 Compound, dissolution inhibitor, positive type resist composition, and method of forming resist pattern 失效
标题翻译：化合物，溶解抑制剂，正型抗蚀剂组合物和形成抗蚀剂图案的方法
公开(公告)号：US08304163B2
公开(公告)日：2012-11-06
申请号：US12980914
申请日：2010-12-29
申请人： Daiju Shiono , Taku Hirayama , Toshiyuki Ogata , Shogo Matsumaru , Hideo Hada
发明人： Daiju Shiono , Taku Hirayama , Toshiyuki Ogata , Shogo Matsumaru , Hideo Hada
IPC分类号： G03F7/004
CPC分类号： G03F7/0392 , C07J9/00 , G03F7/0045 , Y10S430/106
摘要： A positive type resist composition for forming a high resolution resist pattern and a method of forming a resist pattern are provided which use a low-molecular-weight material as a base component, and a compound and a dissolution inhibitor that are each suitable for the positive type resist composition. Here, the compound is a non-polymer having a molecular weight of 500 to 3000, and is decomposed under the action of an acid to produce two or more molecules of a decomposition product having a molecular weight of 200 or more; the dissolution inhibitor comprises the compound; the positive type resist composition comprises the compound and the acid generator component; and the method of forming a resist pattern uses the positive type resist composition.
摘要翻译：提供了用于形成高分辨抗蚀剂图案的正型抗蚀剂组合物和形成抗蚀剂图案的方法，其使用低分子量材料作为基础组分，并且化合物和溶解抑制剂各自适用于阳性型抗蚀剂组合物。这里，该化合物是分子量为500〜3000的非聚合物，在酸的作用下分解，生成分子量为200以上的分解产物的2个以上分子; 该溶解抑制剂包含该化合物; 正型抗蚀剂组合物包含化合物和酸产生剂组分; 并且形成抗蚀剂图案的方法使用正型抗蚀剂组合物。

6. 发明申请

US20110091810A1 COMPOUND, DISSOLUTION INHIBITOR, POSITIVE TYPE RESIST COMPOSITION, AND METHOD OF FORMING RESIST PATTERN 失效
标题翻译：化合物，溶解抑制剂，积极类型抗蚀剂组合物和形成耐药性图案的方法
公开(公告)号：US20110091810A1
公开(公告)日：2011-04-21
申请号：US12980914
申请日：2010-12-29
申请人： Daiju SHIONO , Taku Hirayama , Toshiyuki OGATA , Shogo MATSUMARU , Hideo HADA
发明人： Daiju SHIONO , Taku Hirayama , Toshiyuki OGATA , Shogo MATSUMARU , Hideo HADA
IPC分类号： G03F7/004
CPC分类号： G03F7/0392 , C07J9/00 , G03F7/0045 , Y10S430/106
摘要： A positive type resist composition for forming a high resolution resist pattern and a method of forming a resist pattern are provided which use a low-molecular-weight material as a base component, and a compound and a dissolution inhibitor that are each suitable for the positive type resist composition. Here, the compound is a non-polymer having a molecular weight of 500 to 3000, and is decomposed under the action of an acid to produce two or more molecules of a decomposition product having a molecular weight of 200 or more; the dissolution inhibitor comprises the compound; the positive type resist composition comprises the compound and the acid generator component; and the method of forming a resist pattern uses the positive type resist composition.
摘要翻译：提供了用于形成高分辨抗蚀剂图案的正型抗蚀剂组合物和形成抗蚀剂图案的方法，其使用低分子量材料作为基础组分，并且化合物和溶解抑制剂各自适用于阳性型抗蚀剂组合物。这里，该化合物是分子量为500〜3000的非聚合物，在酸的作用下分解，生成分子量为200以上的分解产物的2个以上分子; 该溶解抑制剂包含该化合物; 正型抗蚀剂组合物包含化合物和酸产生剂组分; 并且形成抗蚀剂图案的方法使用正型抗蚀剂组合物。

7. 发明授权

US08389197B2 Compound, positive resist composition and resist pattern forming method 失效
标题翻译：化合物，正光刻胶组合物和抗蚀剂图案形成方法
公开(公告)号：US08389197B2
公开(公告)日：2013-03-05
申请号：US11994602
申请日：2006-06-30
申请人： Takako Hirosaki , Daiju Shiono , Taku Hirayama , Hideo Hada
发明人： Takako Hirosaki , Daiju Shiono , Taku Hirayama , Hideo Hada
IPC分类号： G03F7/004 , G03F7/039 , G03F7/20 , G03F7/30
CPC分类号： G03F7/0397 , C07C67/343 , C07C69/712 , C07C2603/74 , G03F7/0045
摘要： The present invention provides a positive resist composition and a resist pattern forming method that are capable of forming a resist pattern with a reduced level of roughness. The positive resist composition includes the compound represented by the general formula (I) below. The present invention also provides the resist pattern forming method using the positive resist composition above. [wherein, in formula (I), R11 and R12 each represents, independently, an alkyl group of 1 to 10 carbon atoms or an aromatic hydrocarbon group, and may include a hetero atom in the structure thereof; R21 to R24 each represents, independently, a hydrogen atom or an acid dissociable, dissolution inhibiting group, and two of the R21 to R24 represents a hydrogen atom and the others represents an acid dissociable, dissolution inhibiting group; X is a group represented by general formulas (Ia) or (Ib) below].
摘要翻译：本发明提供能够形成具有降低的粗糙度的抗蚀剂图案的正型抗蚀剂组合物和抗蚀剂图案形成方法。正型抗蚀剂组合物包括由下述通式（I）表示的化合物。本发明还提供了使用上述正型抗蚀剂组合物的抗蚀剂图案形成方法。式（I）中，R 11和R 12分别独立地表示1〜10个碳原子的烷基或芳香族烃基，其结构中可以含有杂原子; R21〜R24各自独立地表示氢原子或酸解离的溶解抑制基团，R21〜R24中的两个表示氢原子，其余表示酸解离，溶解抑制基团。 X为下述通式（Ia）或（Ib）表示的基团。

8. 发明申请

US20070259273A1 Positive Resist Composition and Method of Forming Resist Pattern 有权
标题翻译：正电阻组合物和形成抗蚀剂图案的方法
公开(公告)号：US20070259273A1
公开(公告)日：2007-11-08
申请号：US11572630
申请日：2005-07-25
申请人： Daiju Shiono , Taku Hirayama , Hideo Hada
发明人： Daiju Shiono , Taku Hirayama , Hideo Hada
IPC分类号： G03F1/00
CPC分类号： G03F7/0045 , G03F7/0392
摘要： A positive resist composition including a base material for a pattern-forming material (A), which contains a protector (X1) of a polyhydric phenol compound (x) having two or more phenolic hydroxyl groups and a molecular weight of 300 to 2,500, in which a portion of the phenolic hydroxyl groups are protected with an acid-dissociable, dissolution-inhibiting group, and an acid generator component (B) that generates an acid upon exposure, wherein the component (B) contains an onium salt-based acid generator (B1) with an alkylsulfonate ion as an anion.
摘要翻译：含有图案形成材料（A）的基材的正型抗蚀剂组合物，其含有具有两个或多个酚羟基并且分子量为300〜2,500的多元酚化合物（x）的保护剂（X1）其中一部分酚羟基被酸解离的溶解抑制基团和在暴露时产生酸的酸产生剂组分（B）保护，其中组分（B）含有鎓盐酸产生剂（B1）与烷基磺酸根离子作为阴离子。

9. 发明授权

US07960089B2 Compound, method for producing same, positive resist composition and method for forming resist pattern 失效
标题翻译：化合物，其制造方法，正性抗蚀剂组合物和形成抗蚀剂图案的方法
公开(公告)号：US07960089B2
公开(公告)日：2011-06-14
申请号：US12067255
申请日：2006-09-13
申请人： Daiju Shiono , Takahiro Dazai , Taku Hirayama , Kohei Kasai , Hideo Hada
发明人： Daiju Shiono , Takahiro Dazai , Taku Hirayama , Kohei Kasai , Hideo Hada
IPC分类号： G03F7/004 , C07C39/12
CPC分类号： C07C69/712 , C07C59/70 , C07C59/72 , C07C2601/14 , C07C2603/74 , G03F7/0392
摘要： A compound of the present invention is a compound represented by a general formula (A-1) [wherein, R′ represents a hydrogen atom or an acid-dissociable, dissolution-inhibiting group, provided that at least one R′ group is an acid-dissociable, dissolution-inhibiting group, R11 to R17 each represent an alkyl group of 1 to 10 carbon atoms or an aromatic hydrocarbon group, which may include a hetero atom within the structure; g and j each represent an integer of 1 or greater, and k and q each represent an integer of 0 or greater, provided that g+j+k+q is not greater than 5; a represents an integer from 1 to 3; b represents an integer of 1 or greater, and l and m each represent an integer of 0 or greater, provided that b+l+m is not greater than 4; c represents an integer of 1 or greater, and n and o each represent an integer of 0 or greater, provided that c+n+o is not greater than 4; and A represents a group represented by a general formula (Ia) shown below, a group represented by a general formula (Ib) shown below, or an aliphatic cyclic group].
摘要翻译：本发明化合物是由通式（A-1）表示的化合物[其中，R'表示氢原子或酸解离的溶解抑制基团，条件是至少一个R'基团为酸可溶解抑制基团，R 11至R 17各自表示1-10个碳原子的烷基或芳族烃基，其可以包括结构内的杂原子; g和j分别表示1以上的整数，k和q各自表示0以上的整数，条件是g + j + k + q不大于5; a表示1〜3的整数， b表示1或更大的整数，并且l和m各自表示0或更大的整数，条件是b + 1 + m不大于4; c表示1或更大的整数，n和o各自表示0或更大的整数，条件是c + n + o不大于4; A表示由下述通式（Ia）表示的基团，由下述通式（Ib）表示的基团或脂族环基]表示。

10. 发明授权

US07897319B2 Positive resist composition and method of forming resist pattern 有权
标题翻译：正型抗蚀剂组合物和形成抗蚀剂图案的方法
公开(公告)号：US07897319B2
公开(公告)日：2011-03-01
申请号：US11572630
申请日：2005-07-25
申请人： Daiju Shiono , Taku Hirayama , Hideo Hada
发明人： Daiju Shiono , Taku Hirayama , Hideo Hada
IPC分类号： G03C1/00 , G03F1/00
CPC分类号： G03F7/0045 , G03F7/0392
摘要： A positive resist composition including a base material for a pattern-forming material (A), which contains a protector (X1) of a polyhydric phenol compound (x) having two or more phenolic hydroxyl groups and a molecular weight of 300 to 2,500, in which a portion of the phenolic hydroxyl groups are protected with an acid-dissociable, dissolution-inhibiting group, and an acid generator component (B) that generates an acid upon exposure, wherein the component (B) contains an onium salt-based acid generator (B1) with an alkylsulfonate ion as an anion.
摘要翻译：含有图案形成材料（A）的基材的正型抗蚀剂组合物，其含有具有两个或多个酚羟基并且分子量为300〜2,500的多元酚化合物（x）的保护剂（X1）其中一部分酚羟基被酸解离的溶解抑制基团和在暴露时产生酸的酸产生剂组分（B）保护，其中组分（B）含有鎓盐酸产生剂（B1）与烷基磺酸根离子作为阴离子。

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