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    • 5. 发明授权
    • DIMOSFET SiC semiconductor device
    • DIMOSFET SiC半导体器件
    • US08686437B2
    • 2014-04-01
    • US13601408
    • 2012-08-31
    • Hiroshi KonoTakashi ShinoheTakuma SuzukiJohji Nishio
    • Hiroshi KonoTakashi ShinoheTakuma SuzukiJohji Nishio
    • H01L29/15
    • H01L21/0465H01L29/0878H01L29/1095H01L29/1608H01L29/66068H01L29/66477H01L29/7395H01L29/7802H01L29/7827
    • According to one embodiment, a semiconductor device includes a first, a second, a third, a fourth, and a fifth semiconductor region, an insulating film, a control electrode, and a first and a second electrode. The first, the second, the third, the fourth and the fifth semiconductor region include silicon carbide. The first semiconductor region has a first impurity concentration, and has a first portion. The second semiconductor region is provided on the first semiconductor region. The third semiconductor region is provided on the second semiconductor region. The fourth semiconductor region is provided between the first portion and the second semiconductor region. The fourth semiconductor region is provided between the first portion and the third semiconductor region. The fifth semiconductor region includes a first region provided between the first portion and the second semiconductor region, and has a second impurity concentration higher than the first impurity concentration.
    • 根据一个实施例,半导体器件包括第一,第二,第三,第四和第五半导体区域,绝缘膜,控制电极以及第一和第二电极。 第一,第二,第三,第四和第五半导体区域包括碳化硅。 第一半导体区域具有第一杂质浓度,并且具有第一部分。 第二半导体区域设置在第一半导体区域上。 第三半导体区域设置在第二半导体区域上。 第四半导体区域设置在第一部分和第二半导体区域之间。 第四半导体区域设置在第一部分和第三半导体区域之间。 第五半导体区域包括设置在第一部分和第二半导体区域之间的第一区域,并且具有高于第一杂质浓度的第二杂质浓度。
    • 7. 发明申请
    • SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
    • 半导体器件及其制造方法
    • US20130234158A1
    • 2013-09-12
    • US13601408
    • 2012-08-31
    • Hiroshi KONOTakashi ShinoheTakuma SuzukiJohji Nishio
    • Hiroshi KONOTakashi ShinoheTakuma SuzukiJohji Nishio
    • H01L29/16H01L29/66
    • H01L21/0465H01L29/0878H01L29/1095H01L29/1608H01L29/66068H01L29/66477H01L29/7395H01L29/7802H01L29/7827
    • According to one embodiment, a semiconductor device includes a first, a second, a third, a fourth, and a fifth semiconductor region, an insulating film, a control electrode, and a first and a second electrode. The first, the second, the third, the fourth and the fifth semiconductor region include silicon carbide. The first semiconductor region has a first impurity concentration, and has a first portion. The second semiconductor region is provided on the first semiconductor region. The third semiconductor region is provided on the second semiconductor region. The fourth semiconductor region is provided between the first portion and the second semiconductor region. The fourth semiconductor region is provided between the first portion and the third semiconductor region. The fifth semiconductor region includes a first region provided between the first portion and the second semiconductor region, and has a second impurity concentration higher than the first impurity concentration.
    • 根据一个实施例,半导体器件包括第一,第二,第三,第四和第五半导体区域,绝缘膜,控制电极以及第一和第二电极。 第一,第二,第三,第四和第五半导体区域包括碳化硅。 第一半导体区域具有第一杂质浓度,并具有第一部分。 第二半导体区域设置在第一半导体区域上。 第三半导体区域设置在第二半导体区域上。 第四半导体区域设置在第一部分和第二半导体区域之间。 第四半导体区域设置在第一部分和第三半导体区域之间。 第五半导体区域包括设置在第一部分和第二半导体区域之间的第一区域,并且具有高于第一杂质浓度的第二杂质浓度。
    • 8. 发明授权
    • SiC Schottky barrier semiconductor device
    • SiC肖特基势垒半导体器件
    • US07508045B2
    • 2009-03-24
    • US11827553
    • 2007-07-12
    • Johji NishioTakuma SuzukiChiharu OtaTakashi Shinohe
    • Johji NishioTakuma SuzukiChiharu OtaTakashi Shinohe
    • H01L29/24
    • H01L29/872H01L29/0619H01L29/0623H01L29/1608
    • A semiconductor device includes a first-conductivity-type SiC substrate, a first-conductivity-type SiC semiconductor layer formed on the substrate, whose impurity concentration is lower than that of the substrate, a first electrode formed on the semiconductor layer and forming a Schottky junction with the semiconductor layer, a barrier height of the Schottky junction being 1 eV or less, plural second-conductivity-type junction barriers formed to contact the first electrode and each having a depth d1 from an upper surface of the semiconductor layer, a width w, and a space s between adjacent ones of the junction barriers, a second-conductivity-type edge termination region formed outside the junction barriers to contact the first electrode and having a depth d2 from the upper surface of the semiconductor layer, and a second electrode formed on the second surface of the substrate, wherein following relations are satisfied d1/d2≧1, s/d1≦0.6, and s/(w+s)≦0.33.
    • 半导体器件包括第一导电型SiC衬底,在衬底上形成的杂质浓度低于衬底的第一导电型SiC半导体层,形成在半导体层上并形成肖特基 与所述半导体层的接合部,所述肖特基结的势垒高度为1eV以下,形成为与所述第一电极接触并且各自具有距所述半导体层的上表面的深度d1的多个第二导电型接合阻挡层, w和相邻的所述结屏障之间的空间,形成在所述结屏障外部的接触所述第一电极并具有距所述半导体层的上表面的深度d2的第二导电型边缘终端区域,以及第二导电类型边缘终端区域 形成在基板的第二表面上的电极,其中满足以下关系:d1 / d2> = 1,s / d1 <= 0.6和s /(w + s)<= 0.33。
    • 10. 发明申请
    • Image processor and image processing method
    • 图像处理器和图像处理方法
    • US20060056734A1
    • 2006-03-16
    • US11224302
    • 2005-09-13
    • Takuma SuzukiHiroyuki Okamoto
    • Takuma SuzukiHiroyuki Okamoto
    • G06K9/32
    • H04N1/3935
    • An image processor includes an image processing section, an enlargement processing section, and a controller. When image data to be output from an image output section, including a second predetermined number of pixels, to which image processing has been applied, is generated on the basis of image data input to an image data input unit, including a first predetermined number of pixels smaller than the second predetermined number, the controller controls the enlargement processing section to generate image data including a third predetermined number of pixels larger than the first predetermined number and smaller than the second predetermined number, on the basis of the image data input to the image data input unit, including the first predetermined number of pixels; controls the image processing section to apply image processing to the image data including the third predetermined number of pixels, generated by the enlargement processing section; and controls the enlargement processing section to generate the image data including the second predetermined number of pixels, on the basis of the image data including the third predetermined number of pixels, to which the image processing section has applied image processing.
    • 图像处理器包括图像处理部分,放大处理部分和控制器。 基于输入到图像数据输入单元的图像数据,生成包括第二预定数量的像素的图像数据的图像数据,该图像数据包括第二预定数量的像素, 小于第二预定数量的像素,则控制器根据输入到第二预定数量的图像数据控制放大处理部分生成包括大于第一预定数量并小于第二预定数量的第三预定数量的像素的图像数据 图像数据输入单元,包括第一预定数量的像素; 控制图像处理部分对由放大处理部分生成的包括第三预定数量的像素的图像数据应用图像处理; 并且控制放大处理部分,基于包括图像处理部分应用了图像处理的第三预定数量的像素的图像数据,生成包括第二预定数量的像素的图像数据。