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1. 发明授权

US09287435B2 Method of making photovoltaic devices incorporating improved pnictide semiconductor films 有权
标题翻译：制造具有改进的pnictide半导体膜的光伏器件的方法
公开(公告)号：US09287435B2
公开(公告)日：2016-03-15
申请号：US14373598
申请日：2013-01-30
申请人： DOW GLOBAL TECHNOLOGIES LLC , CALIFORNIA INSTITUTE OF TECHNOLOGY
发明人： Gregory M. Kimball , Harry A. Atwater , Nathan S. Lewis , Jeffrey P. Bosco , Rebekah K. Feist
IPC分类号： H01L31/00 , H01L31/18 , H01L31/0224 , H01L31/032 , H01L31/075 , H01L31/20 , H01L21/00
CPC分类号： H01L31/18 , H01L31/022466 , H01L31/032 , H01L31/075 , H01L31/20 , Y02E10/548
摘要： The present invention uses a treatment that involves an etching treatment that forms a pnictogen-rich region on the surface of a pnictide semiconductor film The region is very thin in many modes of practice, often being on the order of only 2 to 3 nm thick in many embodiments. Previous investigators have left the region in place without appreciating the fact of its presence and/or that its presence, if known, can compromise electronic performance of resultant devices. The present invention appreciates that the formation and removal of the region advantageously renders the pnictide film surface highly smooth with reduced electronic defects. The surface is well-prepared for further device fabrication.
摘要翻译：本发明使用涉及在pnictide半导体膜的表面上形成富含富含富含亚硝酸盐区域的蚀刻处理的处理。在许多实践模式中，该区域非常薄，通常在2至3nm厚的数量级许多实施例。以前的调查人员已经离开了该地区，而不理解其存在的事实和/或其存在（如果知道）可能会损害所得设备的电子性能。本发明认识到，区域的形成和去除有利地使得pnictide膜表面在电子缺陷减少的情况下非常平滑。表面准备好进一步的器件制造。

2. 发明申请

US20150255637A1 PHOTOVOLTAIC DEVICES INCORPORATING THIN CHALCOGENIDE FILM ELECTRICALLY INTERPOSED BETWEEN PNICTIDE-CONTAINING ABSORBER LAYER AND EMITTER LAYER 审中-公开
标题翻译：包含含PNICTIDE的吸收层和发射层之间的电化学膜的薄膜电容器的光伏器件
公开(公告)号：US20150255637A1
公开(公告)日：2015-09-10
申请号：US14433221
申请日：2013-10-07
申请人： DOW GLOBAL TECHNOLOGIES LLC , CALIFORNIA INSTITUTE OF TECHNOLOGY
发明人： Jeffrey P. Bosco , Rebekah K. Feist , Harry A. Atwater , Marty W. Degroot , James C. Stevens , Gregory M. Kimball
IPC分类号： H01L31/0296 , H01L31/032 , H01L31/18 , H01L31/072
CPC分类号： H01L31/0296 , H01L31/032 , H01L31/062 , H01L31/07 , H01L31/072 , H01L31/1085 , H01L31/109 , H01L31/1828 , Y02E10/50
摘要： The present invention provides strategies for improving the quality of the insulating layer in MIS and SIS devices in which the insulator layer interfaces with at least one pnictide-containing film The principles of the present invention are based at least in part on the discovery that very thin (20 nm or less) insulating films comprising a chalcogenide such as i-ZnS are surprisingly superior tunnel barriers in MIS and SIS devices incorporating pnictide semiconductors. In one aspect, the present invention relates to a photovoltaic device, comprising: a semiconductor region comprising at least one pnictide semiconductor; an insulating region electrically coupled to the semiconductor region, wherein the insulating region comprises at least one chalcogenide and has a thickness in the range from 0.5 nm to 20 nm; and a rectifying region electrically coupled to the semiconductor region in a manner such that the insulating region is electrically interposed between the collector region and the semiconductor region.
摘要翻译：本发明提供了改善MIS和SIS器件中的绝缘层的质量的策略，其中绝缘体层与至少一个含有pnictide的膜相接触。本发明的原理至少部分地基于以下发现：非常薄（20nm以下）包含硫族化物如i-ZnS的绝缘膜在MIS和SIS器件中具有令人惊奇的优越的隧道势垒，其包含pnictide半导体。一方面，本发明涉及一种光伏器件，包括：包含至少一个半导体的半导体区域; 绝缘区域，其电耦合到所述半导体区域，其中所述绝缘区域包括至少一个硫族化物，并且具有在0.5nm至20nm范围内的厚度; 以及整流区域，其以这样的方式电耦合到所述半导体区域，使得所述绝缘区域电插入在所述集电极区域和所述半导体区域之间。

3. 发明申请

US20160071994A1 METHOD OF MAKING PHOTOVOLTAIC DEVICES WITH REDUCED CONDUCTION BAND OFFSET BETWEEN PNICTIDE ABSORBER FILMS AND EMITTER FILMS 审中-公开
标题翻译： PNICTIDE吸收膜和发射体膜之间具有减少导电带偏移的光伏器件的制造方法
公开(公告)号：US20160071994A1
公开(公告)日：2016-03-10
申请号：US14373599
申请日：2013-01-30
申请人： DOW GLOBAL TECHNOLOGIES LLC , CALIFORNIA INSTITUTE OF TECHNOLOGY
发明人： Jeffrey P. Bosco , Gregory M. Kimball , Harry A. Atwater , Nathan S. Lewis , Rebekah K. Feist , Marty W. DeGroot
IPC分类号： H01L31/072 , H01L31/18
CPC分类号： H01L31/072 , H01L31/022466 , H01L31/032 , H01L31/18 , Y02E10/50
摘要： The principles of the present invention are used to reduce the conduction band offset between chalcogenide emitter and pnictide absorber films. Alternatively stated, the present invention provides strategies to more closely match the electron affinity characteristics between the absorber and emitter components. The resultant photovoltaic devices have the potential to have higher efficiency and higher open circuit voltage. The resistance of the resultant junctions would be lower with reduced current leakage. In illustrative modes of practice, the present invention incorporates one or more tuning agents into the emitter layer in order to adjust the electron affinity characteristics, thereby reducing the conduction band offset between the emitter and the absorber. In the case of an n-type emitter such as ZnS or a tertiary compound such as zinc sulfide selenide (optionally doped with Al) or the like, an exemplary tuning agent is Mg when the absorber is a p-type pnictide material such as zinc phosphide or an alloy of zinc phosphide incorporating at least one additional metal in addition to Zn and optionally at least one non-metal in addition to phosphorus. Consequently, photovolotaic devices incorporating such films would demonstrate improved electronic performance.
摘要翻译：本发明的原理用于降低硫族化物发射体和pnictide吸收膜之间的导带偏移。或者说，本发明提供了更紧密匹配吸收体和发射体组分之间的电子亲和特性的策略。所得到的光伏器件具有更高的效率和更高的开路电压的潜力。所得结的电阻随着电流泄漏减小而降低。在说明性实践中，本发明将一个或多个调谐剂并入发射极层，以便调节电子亲和特性，从而降低发射极和吸收体之间的导带偏移。在诸如ZnS的n型发射体或诸如硫化锌硒化物（任选地掺杂有Al）等的叔化合物的情况下，当吸收剂是诸如锌的p型pnictide材料时，示例性调谐剂是Mg 磷化物或除了除了磷以外还含有至少一种另外的金属以及任选的至少一种非金属的磷化锌的合金。因此，结合这样的薄膜的光电设备将显示出改进的电子性能。

4. 发明申请

US20140360566A1 METHOD OF MAKING PHOTOVOLTAIC DEVICES INCORPORATING IMPROVED PNICTIDE SEMICONDUCTOR FILMS USING METALLIZATION/ANNEALING/REMOVAL TECHNIQUES 审中-公开
标题翻译：使用金属化/退火/去除技术制造改进的PNICTIDE半导体膜的光电器件的制造方法
公开(公告)号：US20140360566A1
公开(公告)日：2014-12-11
申请号：US14373600
申请日：2013-01-30
申请人： DOW GLOBAL TECHNOLOGIESD LLC , CALIFORNIA INSTITUTE OF TECHNOLOGY
发明人： Gregory M. Kimball , Marty W. DeGroot , Harry A. Atwater , Nathan S. Lewis , Rebekah K. Feist , Jeffrey P. Bosco
IPC分类号： H01L21/477 , H01L31/18 , H01L31/032
CPC分类号： H01L21/477 , H01L31/032 , H01L31/072 , H01L31/075 , H01L31/18 , H01L31/1864 , Y02E10/548
摘要： The present invention provides methods of making photovoltaic devices incorporating improved pnictide semiconductor films. In particular, the principles of the present invention are used to improve the surface quality of pnictide films. Photovoltaic devices incorporating these films demonstrate improved electronic performance. As an overview, the present invention involves a methodology that metalizes the pnictide film, anneals the metalized film under conditions that tend to form an alloy between the pnictide film and the alloy, and then removes the excess metal and at least a portion of the alloy. In one mode of practice, the pnictide semiconductor is Zinc phosphide and the metal is Magnesium.
摘要翻译：本发明提供了制造具有改进的pnictide半导体膜的光伏器件的方法。特别地，本发明的原理被用来改善pnictide膜的表面质量。结合这些膜的光伏器件表现出改进的电子性能。作为概述，本发明涉及一种使pnictide膜金属化的方法，在倾向于在pnictide膜和合金之间形成合金的条件下退火金属化膜，然后除去多余的金属和至少一部分合金。在一种实践中，pnictide半导体是磷化锌，金属是镁。

5. 发明申请

US20150011042A1 METHOD OF MAKING PHOTOVOLTAIC DEVICES INCORPORATING IMPROVED PNICTIDE SEMICONDUCTOR FILMS 有权
标题翻译：制造改进的PNICTIDE半导体膜的光伏器件的方法
公开(公告)号：US20150011042A1
公开(公告)日：2015-01-08
申请号：US14373598
申请日：2013-01-30
申请人： DOW GLOBAL TECHNOLOGIESD LLC , CALIFORNIA INSTITUTE OF TECHNOLOGY
发明人： Gregory M. Kimball , Harry A. Atwater , Nathan S. Lewis , Jeffrey P. Bosco , Rebekah K. Feist
IPC分类号： H01L31/18 , H01L31/032
CPC分类号： H01L31/18 , H01L31/022466 , H01L31/032 , H01L31/075 , H01L31/20 , Y02E10/548
摘要： The present invention uses a treatment that involves an etching treatment that forms a pnictogen-rich region on the surface of a pnictide semiconductor film The region is very thin in many modes of practice, often being on the order of only 2 to 3 nm thick in many embodiments. Previous investigators have left the region in place without appreciating the fact of its presence and/or that its presence, if known, can compromise electronic performance of resultant devices. The present invention appreciates that the formation and removal of the region advantageously renders the pnictide film surface highly smooth with reduced electronic defects. The surface is well-prepared for further device fabrication.
摘要翻译：本发明使用涉及在pnictide半导体膜的表面上形成富含富含富含亚硝酸盐区域的蚀刻处理的处理。在许多实践模式中，该区域非常薄，通常在2至3nm厚的数量级许多实施例。以前的调查人员已经离开了该地区，而不理解其存在的事实和/或其存在（如果知道）可能会损害所得设备的电子性能。本发明认识到，区域的形成和去除有利地使得pnictide膜表面在电子缺陷减少的情况下非常平滑。表面准备好进一步的器件制造。

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