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1. 发明申请

US20150044857A1 DIVIDING METHOD FOR WAFER 有权
标题翻译：分散方法
公开(公告)号：US20150044857A1
公开(公告)日：2015-02-12
申请号：US14454136
申请日：2014-08-07
申请人： DISCO CORPORATION , IWATANI CORPORATION
发明人： Sakae Matsuzaki , Takatoshi Masuda , Nozomi Maemoto , Yu Yoshino , Takehiko Senoo , Toshihiro Aida , Tomoya Biro
IPC分类号： H01L21/78 , H01L21/3065 , H01L21/268
CPC分类号： H01L21/78 , H01L21/02076 , H01L21/2686 , H01L21/3065
摘要： A dividing method for a wafer includes a step of irradiating a laser beam along streets to form modified regions in an inside of a wafer, a step of dividing the wafer into individual chips beginning with starting points given by the modified regions, a step of placing a processing chamber in which the wafer is charged to a vacuum state and fill the processing chamber with inert gas, and a step of introducing etching gas into the processing chamber filled with the inert gas to etch side faces of the chips.
摘要翻译：晶片的分割方法包括沿着街道照射激光束以在晶片的内部形成改质区域的步骤，将晶片分成以修改区域给出的起始点开始的各个芯片的步骤，放置处理室，其中将晶片充电至真空状态并用惰性气体填充处理室;以及将蚀刻气体引入填充有惰性气体的处理室中以蚀刻芯片的侧面的步骤。

2. 发明授权

US09159622B2 Dividing method for wafer 有权
标题翻译：晶圆分割方法
公开(公告)号：US09159622B2
公开(公告)日：2015-10-13
申请号：US14454136
申请日：2014-08-07
申请人： DISCO CORPORATION , IWATANI CORPORATION
发明人： Sakae Matsuzaki , Takatoshi Masuda , Nozomi Maemoto , Yu Yoshino , Takehiko Senoo , Toshihiro Aida , Tomoya Biro
IPC分类号： H01L21/78 , H01L21/268 , H01L21/3065
CPC分类号： H01L21/78 , H01L21/02076 , H01L21/2686 , H01L21/3065
摘要： A dividing method for a wafer includes a step of irradiating a laser beam along streets to form modified regions in an inside of a wafer, a step of dividing the wafer into individual chips beginning with starting points given by the modified regions, a step of placing a processing chamber in which the wafer is charged to a vacuum state and fill the processing chamber with inert gas, and a step of introducing etching gas into the processing chamber filled with the inert gas to etch side faces of the chips.
摘要翻译：晶片的分割方法包括沿着街道照射激光束以在晶片的内部形成改质区域的步骤，将晶片分成以修改区域给出的起始点开始的各个芯片的步骤，放置处理室，其中将晶片充电至真空状态并用惰性气体填充处理室;以及将蚀刻气体引入填充有惰性气体的处理室中以蚀刻芯片的侧面的步骤。

3. 发明申请

US20140209240A1 VACUUM PROCESSING APPARATUS 审中-公开
标题翻译：真空加工设备
公开(公告)号：US20140209240A1
公开(公告)日：2014-07-31
申请号：US14168190
申请日：2014-01-30
申请人： Disco Corporation
发明人： Sakae Matsuzaki , Takatoshi Masuda
IPC分类号： H01L21/67 , H01L21/677
CPC分类号： H01L21/677 , H01L21/67126 , H01L21/6719 , H01L21/67742 , H01L21/68742
摘要： A vacuum processing apparatus for processing a workpiece under vacuum. The vacuum processing apparatus includes a housing having a first vacuum chamber for processing the workpiece and a second vacuum chamber partitioned from the first vacuum chamber by a partition wall and communicating with the first vacuum chamber through a communication opening formed in the partition wall, a shutter for closing the communication opening of the partition wall, a gate for closing a workpiece load/unload opening communicating with the second vacuum chamber, a workpiece holding unit provided in the first vacuum chamber for holding the workpiece, a processing unit for processing the workpiece held by the workpiece holding unit, a first evacuating unit for evacuating the first vacuum chamber, and a second evacuating unit for evacuating the second vacuum chamber.
摘要翻译：一种在真空下加工工件的真空处理装置。该真空处理装置包括具有用于处理工件的第一真空室的壳体和通过分隔壁与第一真空室隔开的第二真空室，并通过形成在分隔壁中的连通开口与第一真空室连通，用于关闭分隔壁的连通开口，用于关闭与第二真空室连通的工件装载/卸载开口的门，设置在第一真空室中用于保持工件的工件保持单元，用于加工工件的处理单元通过工件保持单元，用于抽真空第一真空室的第一排气单元和用于抽空第二真空室的第二抽空单元。

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