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1. 发明授权

US11935863B2 Laser reflow apparatus and laser reflow method 有权
公开(公告)号：US11935863B2
公开(公告)日：2024-03-19
申请号：US17123318
申请日：2020-12-16
申请人： DISCO CORPORATION
发明人： Satoshi Kobayashi , Youngsuk Kim , Nobuyuki Kimura , Yuki Ikku , Zhiwen Chen
IPC分类号： H01L23/00 , B23K1/00 , B23K1/005 , B23K3/08 , B23K26/03 , B23K26/06 , B23K101/40 , G02B19/00 , G02B27/30
CPC分类号： H01L24/75 , B23K1/0016 , B23K1/0056 , B23K3/08 , B23K26/034 , B23K26/0608 , B23K26/0648 , B23K26/0665 , G02B19/0009 , G02B19/0047 , H01L24/81 , B23K2101/40 , G02B27/30 , H01L2224/75253 , H01L2224/75263 , H01L2224/7555 , H01L2224/81224 , H01L2224/81815 , H01L2924/3511
摘要： A laser reflow apparatus reflows solder bumps disposed on a side of a semiconductor chip in a workpiece and included in an irradiation range on the workpiece by applying a laser beam to an opposite side of the semiconductor chip. The laser reflow apparatus includes a spatial beam modulation unit including a laser power density setting function to locally set the laser power density in the irradiation range of a laser beam emitted from a laser beam source, and an image focusing unit including an image focusing function to focus the laser beam emitted from the laser beam source and apply the focused laser beam to the irradiation range on the workpiece.

2. 发明授权

US08753923B2 Wafer processing method 有权
标题翻译：晶圆加工方法
公开(公告)号：US08753923B2
公开(公告)日：2014-06-17
申请号：US13788545
申请日：2013-03-07
申请人： Disco Corporation
发明人： Satoshi Kobayashi , Jinyan Zhao
IPC分类号： H01L21/301 , H01L21/304 , H01L21/78
CPC分类号： H01L21/78 , B24B7/228 , H01L21/67092 , H01L21/683
摘要： A wafer processing method of dividing a wafer along streets. The wafer processing method includes a protective tape attaching step of attaching a protective tape to the front side of the wafer, a modified layer forming step of holding the wafer through the protective tape on a chuck table of a laser processing apparatus under suction and next applying a laser beam having a transmission wavelength to the wafer from the back side of the wafer along the streets, thereby forming a modified layer inside the wafer along each street, and a wafer dividing step of canceling suction holding of the wafer by the chuck table and next applying an air pressure to the wafer now placed on the holding surface in the condition where horizontal movement of the wafer is limited, thereby dividing the wafer along each street where the modified layer is formed, thus obtaining individual devices.
摘要翻译：一种沿街道划分晶片的晶片处理方法。晶片处理方法包括将保护带附着到晶片的正面的保护带贴合步骤，将该晶片通过保护带保持在吸附的激光加工装置的卡盘台上并进行下一次施加的改质层形成工序激光束，其沿着街道从晶片的背面向晶片传输波长，从而沿着每条街道在晶片内部形成改质层;以及晶片分割步骤，通过卡盘台取消晶片的吸持保持;以及接着在晶片的水平移动受到限制的状态下，将现有的放置在保持面上的晶片施加气压，从而沿着形成有修饰层的街道划分晶片，从而获得各种器件。

3. 发明授权

US11610816B2 Processing method of wafer 有权
公开(公告)号：US11610816B2
公开(公告)日：2023-03-21
申请号：US17171138
申请日：2021-02-09
申请人： DISCO CORPORATION
发明人： Yuki Ikku , Shuichiro Tsukiji , Satoshi Kobayashi
IPC分类号： H01L21/78 , H01L21/268 , B23K26/00 , B23K26/0622 , B23K26/53 , B23K26/03 , B23K101/40
摘要： A processing method of a wafer in which a modified layer is formed inside the wafer. In the processing method, irradiation with a first laser beam is executed from a back surface side of the wafer and the modified layer is formed inside the wafer. Then, irradiation with a second laser beam is executed with the focal point thereof positioned to the inside or the front surface of the wafer and reflected light is imaged by an imaging unit. Furthermore, a processing state of the wafer is determined on the basis of a taken image. The second laser beam is shaped in such a manner that a sectional shape thereof in a surface perpendicular to a traveling direction thereof becomes asymmetric across the modified layer.

4. 发明授权

US09649723B2 Processing apparatus including laser beam applying mechanism and separating means 有权
公开(公告)号：US09649723B2
公开(公告)日：2017-05-16
申请号：US14444465
申请日：2014-07-28
申请人： DISCO CORPORATION
发明人： Yoshio Umeda , Satoshi Kobayashi , Yasuyoshi Yubira
IPC分类号： B23K26/40 , B23K26/00 , B23K26/08 , B24B7/22 , H01L21/67 , B23K103/00
CPC分类号： B23K26/0093 , B23K26/08 , B23K26/40 , B23K26/402 , B23K26/50 , B23K26/53 , B23K2103/50 , B24B7/228 , H01L21/67092 , H01L21/67115 , H01L21/67219
摘要： A processing apparatus including a chuck table having a holding surface for rotatably holding a workpiece, a laser beam applying mechanism having a laser beam generating unit for generating a laser beam and focusing the laser beam to the inside of the workpiece held on the chuck table, a relatively moving unit for relatively moving the chuck table and the laser beam applying mechanism in a direction parallel to the holding surface of the chuck table while applying the laser beam to the workpiece to thereby form a modified layer inside of the workpiece, a separating unit for separating a part of the workpiece along the modified layer as a boundary formed inside the workpiece, and a grinding/polishing unit having a grinding/polishing wheel for grinding or polishing the modified layer left on the workpiece after separating the part and a spindle for rotatably mounting the grinding/polishing wheel.

5. 发明申请

US20170040235A1 TEST WAFER AND USING METHOD THEREFOR 审中-公开
标题翻译：测试波形及其使用方法
公开(公告)号：US20170040235A1
公开(公告)日：2017-02-09
申请号：US15220886
申请日：2016-07-27
申请人： DISCO CORPORATION
发明人： Satoshi Kobayashi , Shunsuke Teranishi , Nobumori Ogoshi , Atsushi Ueki , Yuriko Sato
IPC分类号： H01L21/66
CPC分类号： H01L22/30 , H01L22/12
摘要： Disclosed herein is a using method for a test wafer including a test substrate and a metal foil formed on the front side of the test substrate. The using method includes a modified layer forming step of applying a laser beam having a transmission wavelength to the test substrate from the back side of the test wafer in the condition where the focal point of the laser beam is set inside the test substrate, thereby forming a modified layer inside the test substrate, and a damage detecting step of observing the front side of the test wafer after performing the modified layer forming step, thereby detecting damage to the metal foil.
摘要翻译：本文公开了一种用于测试晶片的使用方法，该测试晶片包括形成在测试基板正面上的测试基板和金属箔。使用方法包括：在激光束的焦点设置在测试基板内部的状态下，从测试晶片的背面向测试基板施加具有透射波长的激光束的修改层形成步骤，从而形成在测试基板内部的改性层，以及在进行改性层形成步骤之后观察测试晶片的正面的损伤检测步骤，从而检测对金属箔的损坏。

6. 发明授权

US10557704B2 Non-destructive detection method 有权
公开(公告)号：US10557704B2
公开(公告)日：2020-02-11
申请号：US16265353
申请日：2019-02-01
申请人： DISCO CORPORATION
发明人： Shuichiro Tsukiji , Yuki Ikku , Keiji Nomaru , Satoshi Kobayashi
IPC分类号： G01B11/22
摘要： A non-destructive detection method includes, after carrying out a preparation step of preparing an inspection apparatus, an image acquisition step of intermittently moving an objective lens by a predetermined distance in a Z-axis direction orthogonal to an X-Y plane to be made closer to a first surface, positioning a focal point to a Z-axis coordinate value where a distance of the focal point extends by a refractive index of a workpiece, acquiring an X-Y plane image of an inside of the workpiece for each of a plurality of Z-axis coordinate values, and then, recording the acquired images in a recording unit, and a modified layer detecting step of detecting a state of a modified layer from the X-Y plane image for each of the plurality of Z-axis coordinate values recorded in the recording unit.

7. 发明授权

US10249547B2 Method for using a test wafer by forming modified layer using a laser beam and observing damage after forming modified layer 有权
公开(公告)号：US10249547B2
公开(公告)日：2019-04-02
申请号：US15220886
申请日：2016-07-27
申请人： DISCO CORPORATION
发明人： Satoshi Kobayashi , Shunsuke Teranishi , Nobumori Ogoshi , Atsushi Ueki , Yuriko Sato , Yasuhiro Shimma
IPC分类号： H01L21/66
摘要： Disclosed herein is a using method for a test wafer including a test substrate and a metal foil formed on the front side of the test substrate. The using method includes a modified layer forming step of applying a laser beam having a transmission wavelength to the test substrate from the back side of the test wafer in the condition where the focal point of the laser beam is set inside the test substrate, thereby forming a modified layer inside the test substrate, and a damage detecting step of observing the front side of the test wafer after performing the modified layer forming step, thereby detecting damage to the metal foil.

8. 发明授权

US09543189B2 Laminated wafer processing method 有权
标题翻译：层压晶片加工方法
公开(公告)号：US09543189B2
公开(公告)日：2017-01-10
申请号：US14445608
申请日：2014-07-29
申请人： DISCO CORPORATION
发明人： Seiji Harada , Satoshi Kobayashi , Yasuyoshi Yubira
IPC分类号： H01L21/84 , H01L21/302 , B32B37/18 , B29C65/16 , H01L21/762 , H01L21/268
CPC分类号： H01L21/76251 , H01L21/268 , H01L21/67092
摘要： A method of processing a laminated wafer in which a first wafer is laminated on a second wafer, the method including: a laminated wafer forming step of forming the laminated wafer by laminating the first wafer on the second wafer; a modified layer forming step of forming a modified layer within the first wafer by positioning a focusing point of a laser beam within the first wafer and moving the first wafer in a horizontal direction relative to the focusing point while applying the laser beam, the modified layer forming step being performed before or after the laminated wafer forming step is performed; and a separating step of separating part of the first wafer from the laminated wafer with the modified layer as a boundary, the separating step being performed after the laminated wafer forming step and the modified layer forming step are performed.
摘要翻译：一种处理层叠晶片的方法，其中第一晶片层叠在第二晶片上，所述方法包括：层叠晶片形成步骤，通过在第二晶片上层叠第一晶片来形成层压晶片; 改进层形成步骤，通过将激光束的聚焦点定位在第一晶片内并在施加激光束的同时相对于聚焦点在水平方向上移动第一晶片，在第一晶片内形成修饰层，改性层在层叠晶片形成步骤之前或之后进行形成步骤; 以及分离步骤，其中所述第一晶片的一部分与所述层叠晶片以所述改性层作为边界分离，所述分离步骤在进行所述层压晶片形成步骤和所述改性层形成步骤之后进行。

9. 发明申请

US20150038062A1 PROCESSING APPARATUS INCLUDING LASER BEAM APPLYING MECHANISM AND SEPARATING MEANS 有权
标题翻译：加工装置包括激光束应用机械和分离装置
公开(公告)号：US20150038062A1
公开(公告)日：2015-02-05
申请号：US14444465
申请日：2014-07-28
申请人： DISCO CORPORATION
发明人： Yoshio Umeda , Satoshi Kobayashi , Yasuyoshi Yubira
IPC分类号： B23K26/00 , H01L21/67 , B24B7/22 , B23K26/08 , B23K26/40
CPC分类号： B23K26/0093 , B23K26/08 , B23K26/40 , B23K26/402 , B23K26/50 , B23K26/53 , B23K2103/50 , B24B7/228 , H01L21/67092 , H01L21/67115 , H01L21/67219
摘要： A processing apparatus including a chuck table having a holding surface for rotatably holding a workpiece, a laser beam applying mechanism having a laser beam generating unit for generating a laser beam and focusing the laser beam to the inside of the workpiece held on the chuck table, a relatively moving unit for relatively moving the chuck table and the laser beam applying mechanism in a direction parallel to the holding surface of the chuck table while applying the laser beam to the workpiece to thereby form a modified layer inside of the workpiece, a separating unit for separating a part of the workpiece along the modified layer as a boundary formed inside the workpiece, and a grinding/polishing unit having a grinding/polishing wheel for grinding or polishing the modified layer left on the workpiece after separating the part and a spindle for rotatably mounting the grinding/polishing wheel.
摘要翻译：一种处理装置，包括具有用于可旋转地保持工件的保持表面的卡盘台，具有用于产生激光束并将激光束聚焦到保持在卡盘台上的工件内部的激光束产生单元的激光束施加机构，相对移动的单元，用于在将夹持台和激光束施加机构平行于卡盘台的保持表面的方向上相对移动，同时将激光束施加到工件上，从而在工件内部形成改性层;分离单元用于沿着改性层分离一部分工件作为形成在工件内部的边界;以及磨削/抛光单元，其具有研磨/抛光轮，用于在分离部件之后研磨或抛光留在工件上的改性层，以及用于可旋转地安装研磨/抛光轮。

10. 发明申请

US20150037962A1 LAMINATED WAFER PROCESSING METHOD 有权
标题翻译：层压加工方法
公开(公告)号：US20150037962A1
公开(公告)日：2015-02-05
申请号：US14445608
申请日：2014-07-29
申请人： DISCO CORPORATION
发明人： Seiji Harada , Satoshi Kobayashi , Yasuyoshi Yubira
IPC分类号： H01L21/762 , H01L21/268
CPC分类号： H01L21/76251 , H01L21/268 , H01L21/67092
摘要： A method of processing a laminated wafer in which a first wafer is laminated on a second wafer, the method including: a laminated wafer forming step of forming the laminated wafer by laminating the first wafer on the second wafer; a modified layer forming step of forming a modified layer within the first wafer by positioning a focusing point of a laser beam within the first wafer and moving the first wafer in a horizontal direction relative to the focusing point while applying the laser beam, the modified layer forming step being performed before or after the laminated wafer forming step is performed; and a separating step of separating part of the first wafer from the laminated wafer with the modified layer as a boundary, the separating step being performed after the laminated wafer forming step and the modified layer forming step are performed.
摘要翻译：一种处理层叠晶片的方法，其中第一晶片层叠在第二晶片上，所述方法包括：层叠晶片形成步骤，通过在第二晶片上层叠第一晶片来形成层压晶片; 改进层形成步骤，通过将激光束的聚焦点定位在第一晶片内并在施加激光束的同时相对于聚焦点在水平方向上移动第一晶片，在第一晶片内形成修饰层，改性层在层叠晶片形成步骤之前或之后进行形成步骤; 以及分离步骤，其中所述第一晶片的一部分与所述层叠晶片以所述改性层作为边界分离，所述分离步骤在进行所述层压晶片形成步骤和所述改性层形成步骤之后进行。

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