专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20130137197A1 METHODS FOR QUANTITATIVE MEASUREMENT OF A PLASMA IMMERSION PROCESS 有权
标题翻译：用于定量测量等离子体浸没过程的方法
公开(公告)号：US20130137197A1
公开(公告)日：2013-05-30
申请号：US13307319
申请日：2011-11-30
申请人： DAPING YAO , PETER I. PORSHNEV , MARTIN A. HILKENE , MATTHEW D. SCOTNEY-CASTLE , MANOJ VELLAIKAL
发明人： DAPING YAO , PETER I. PORSHNEV , MARTIN A. HILKENE , MATTHEW D. SCOTNEY-CASTLE , MANOJ VELLAIKAL
IPC分类号： H01L21/66
CPC分类号： H01L22/12 , H01L21/3115
摘要： Methods for quantitatively measuring the performance of a plasma immersion process are provided herein. In some embodiments, a method of quantitatively measuring the performance of a plasma immersion process, using a first substrate comprising an oxide layer deposited atop a silicon layer, may include subjecting the first substrate to a plasma immersion process in a first plasma immersion chamber to form a doped oxide layer atop the first substrate; and determining a thickness of the doped oxide layer by shining a beam of light upon a reflective surface of the doped oxide layer; detecting reflected beams of light off of the reflective surface of the doped oxide layer; and analyzing the reflected beams of light to determine the thickness of the doped oxide layer on the first substrate.
摘要翻译：本文提供了定量测量等离子浸渍工艺性能的方法。在一些实施例中，使用包括沉积在硅层上方的氧化物层的第一衬底定量测量等离子体浸渍工艺的性能的方法可包括使第一衬底经受第一等离子体浸没室中的等离子体浸入工艺以形成在第一衬底顶上的掺杂氧化物层; 以及通过在所述掺杂氧化物层的反射表面上照射光束来确定所述掺杂氧化物层的厚度; 检测来自掺杂氧化物层的反射表面的反射光束; 以及分析反射光束以确定第一衬底上的掺杂氧化物层的厚度。

2. 发明申请

US20120238074A1 METHODS AND APPARATUS FOR CONFORMAL DOPING 有权
标题翻译：方法和装置适用于DOPING
公开(公告)号：US20120238074A1
公开(公告)日：2012-09-20
申请号：US13188824
申请日：2011-07-22
申请人： KARTIK SANTHANAM , MARTIN A. HILKENE , MANOJ VELLAIKAL , MARK R. LEE , MATTHEW D. SCOTNEY-CASTLE , PETER I. PORSHNEV
发明人： KARTIK SANTHANAM , MARTIN A. HILKENE , MANOJ VELLAIKAL , MARK R. LEE , MATTHEW D. SCOTNEY-CASTLE , PETER I. PORSHNEV
IPC分类号： H01L21/265 , H01L21/326
CPC分类号： H01L21/2236 , H01J37/32412 , H01J37/32623 , H01J37/32669 , H01L21/324
摘要： Methods and apparatus for processing a substrate are provided herein. In some embodiments, a method of doping a substrate may include forming a dopant region on a substrate by implanting one or more dopant elements into the dopant region of the substrate using a plasma doping process; forming a cap layer atop the dopant region; annealing the dopant region after forming the cap layer; and removing the cap layer after annealing the dopant region.
摘要翻译：本文提供了用于处理衬底的方法和设备。在一些实施例中，掺杂衬底的方法可以包括通过使用等离子体掺杂工艺将一个或多个掺杂剂元素注入到衬底的掺杂剂区域中在衬底上形成掺杂剂区域; 在掺杂剂区域的顶部形成帽层; 在形成盖层之后退火掺杂剂区域; 并且在退火掺杂剂区域之后去除覆盖层。

3. 发明申请

US20130095643A1 METHODS FOR IMPLANTING DOPANT SPECIES IN A SUBSTRATE 审中-公开
标题翻译：在基材中植入D物种的方法
公开(公告)号：US20130095643A1
公开(公告)日：2013-04-18
申请号：US13274776
申请日：2011-10-17
申请人： KARTIK SANTHANAM , MATTHEW D. SCOTNEY-CASTLE , MANOJ VELLAIKAL , PETER I. PORSHNEV
发明人： KARTIK SANTHANAM , MATTHEW D. SCOTNEY-CASTLE , MANOJ VELLAIKAL , PETER I. PORSHNEV
IPC分类号： H01L21/265
CPC分类号： H01L21/2236 , H01J37/32412
摘要： Methods for processing a substrate are provided herein. In some embodiments, a method of processing a substrate may include implanting a dopant species into the one or more regions of the substrate using a first dopant precursor comprising a hydride of the dopant species; and implanting the dopant species into the one or more regions of the substrate using a second dopant precursor comprising fluorine and the dopant species. In some embodiments, the first and second dopant precursors may be provided simultaneously. In some embodiments, the first dopant precursor may be provided for a first time period, followed by providing the first dopant precursor and the second dopant precursor for a second period of time. In some embodiments, the flow of the first dopant precursor and the flow of the second dopant precursor may be alternated until a desired implant level is reached.
摘要翻译：本文提供了处理基板的方法。在一些实施例中，处理衬底的方法可以包括使用包含掺杂剂物质的氢化物的第一掺杂剂前体将掺杂剂物质注入衬底的一个或多个区域; 以及使用包含氟和所述掺杂剂物质的第二掺杂剂前体将所述掺杂剂物质注入到所述衬底的所述一个或多个区域中。在一些实施方案中，可以同时提供第一和第二掺杂剂前体。在一些实施方案中，可以在第一时间段内提供第一掺杂剂前体，随后在第二时间段内提供第一掺杂剂前体和第二掺杂剂前体。在一些实施方案中，第一掺杂剂前体的流动和第二掺杂剂前体的流动可以交替，直到达到期望的植入水平。

4. 发明申请

US20130014894A1 METHODS AND APPARATUS FOR CONTROLLING POWER DISTRIBUTION IN SUBSTRATE PROCESSING SYSTEMS 审中-公开
标题翻译：用于控制基板处理系统中功率分配的方法和装置
公开(公告)号：US20130014894A1
公开(公告)日：2013-01-17
申请号：US13190985
申请日：2011-07-26
申请人： CANFENG LAI , DAVID E. ABERLE , MICHAEL P. KAMP , HENRY BARANDICA , MARTIN A. HILKENE , MATTHEW D. SCOTNEY-CASTLE , JEFFREY TOBIN , DOUGLAS H. BURNS , LARA HAWRYLCHAK , PETER I. PORSHNEV
发明人： CANFENG LAI , DAVID E. ABERLE , MICHAEL P. KAMP , HENRY BARANDICA , MARTIN A. HILKENE , MATTHEW D. SCOTNEY-CASTLE , JEFFREY TOBIN , DOUGLAS H. BURNS , LARA HAWRYLCHAK , PETER I. PORSHNEV
IPC分类号： C23F1/08 , C23C16/52 , C23C16/505
CPC分类号： H01J37/32082 , H01J37/321 , H01J37/32155 , H01J37/32174
摘要： Methods and apparatus for controlling power distribution in a substrate processing system are provided. In some embodiments, a substrate processing system including a process chamber having a substrate support and a processing region disposed above the substrate support; a first conduit disposed above the processing region to provide a portion of a first toroidal path that extends through the first conduit and across the processing region; a second conduit disposed above the processing region to provide a portion of a second toroidal path that extends through the second conduit and across the processing region; an RF generator coupled to the first and second conduits to provide RF energy having a first frequency to each of the first and second conduits; an impedance matching network disposed between the RF generator and the first and second conduits; and a power divider to control the amount of RF energy provided to the first and second conduits from the RF generator.
摘要翻译：提供了一种用于控制基板处理系统中的配电的方法和装置。在一些实施例中，衬底处理系统包括具有衬底支撑件的处理室和设置在衬底支架上方的处理区域; 设置在所述处理区域上方以提供延伸穿过所述第一管道并横跨所述处理区域的第一环形路径的一部分的第一管道; 设置在所述处理区域上方的第二导管，以提供延伸穿过所述第二导管并横跨所述处理区域的第二环形路径的一部分; 耦合到所述第一和第二导管的RF发生器，以向所述第一和第二导管中的每一个提供具有第一频率的RF能量; 设置在所述RF发生器与所述第一和第二管道之间的阻抗匹配网络; 以及功率分配器，用于控制从RF发生器提供给第一和第二导管的RF能量的量。

5. 发明申请

US20120088356A1 INTEGRATED PLATFORM FOR IN-SITU DOPING AND ACTIVATION OF SUBSTRATES 审中-公开
标题翻译：集成平台，用于基站的排除和激活
公开(公告)号：US20120088356A1
公开(公告)日：2012-04-12
申请号：US13227034
申请日：2011-09-07
申请人： KARTIK SANTHANAM , MARTIN A. HILKENE , MATTHEW D. SCOTNEY-CASTLE , PETER I. PORSHNEV , SWAMINATHAN SRINIVASAN , SUNDAR RAMAMURTHY
发明人： KARTIK SANTHANAM , MARTIN A. HILKENE , MATTHEW D. SCOTNEY-CASTLE , PETER I. PORSHNEV , SWAMINATHAN SRINIVASAN , SUNDAR RAMAMURTHY
IPC分类号： H01L21/265
CPC分类号： H01L21/2236 , H01L21/324 , H01L21/67207
摘要： An integrated platform for processing substrates, comprising: a vacuum substrate transfer chamber; a doping chamber coupled to the vacuum substrate transfer chamber, the doping chamber configured to implant or deposit dopant elements in or on a surface of a substrate; a dopant activation chamber coupled to the vacuum substrate transfer chamber, the dopant activation chamber configured to anneal the substrate and activate the dopant elements; and a controller configured to control the integrated platform, the controller comprising a computer readable media having instructions stored thereon that, when executed by the controller, causes the integrated platform to perform a method, the method comprising: doping a substrate with one or more dopant elements in the doping chamber; transferring the substrate under vacuum to the dopant activation chamber; and annealing the substrate in the dopant activation chamber to activate the dopant elements.
摘要翻译：一种用于处理衬底的集成平台，包括：真空衬底传送室; 耦合到所述真空衬底传送室的掺杂室，所述掺杂室被配置为将掺杂元素注入或沉积在衬底的表面中或其上; 掺杂剂激活室，其耦合到所述真空衬底传送室，所述掺杂剂激活室被配置为退火所述衬底并激活所述掺杂元素; 以及控制器，其被配置为控制所述集成平台，所述控制器包括具有存储在其上的指令的计算机可读介质，当由所述控制器执行时，所述控制器使所述集成平台执行方法，所述方法包括：将衬底与一个或多个掺杂剂掺杂室中的元素; 将衬底真空转移到掺杂剂活化室; 以及退火所述掺杂剂激活室中的所述衬底以激活所述掺杂元素。

6. 发明申请

US20130017315A1 METHODS AND APPARATUS FOR CONTROLLING POWER DISTRIBUTION IN SUBSTRATE PROCESSING SYSTEMS 审中-公开
公开(公告)号：US20130017315A1
公开(公告)日：2013-01-17
申请号：US13183921
申请日：2011-07-15
申请人： CANFENG LAI , DAVID EUGENE ABERLE , MICHAEL P. CAMP , HENRY BARANDICA , MARTIN A. HILKENE , MATTHEW D. SCOTNEY-CASTLE , JEFFREY TOBIN , DOUGLAS H. BURNS , LARA HAWRYLCHAK
发明人： CANFENG LAI , DAVID EUGENE ABERLE , MICHAEL P. CAMP , HENRY BARANDICA , MARTIN A. HILKENE , MATTHEW D. SCOTNEY-CASTLE , JEFFREY TOBIN , DOUGLAS H. BURNS , LARA HAWRYLCHAK , PETER I. PORSHNEV
IPC分类号： C23C16/505 , C23C16/52 , H05H1/46
CPC分类号： H01J37/32082 , H01J37/321 , H01J37/32155 , H01J37/32174
摘要： Methods and apparatus for controlling power distribution in a substrate processing system are provided. In some embodiments, a substrate processing system including a process chamber having a substrate support and a processing region disposed above the substrate support; a first conduit disposed above the processing region to provide a portion of a first toroidal path that extends through the first conduit and across the processing region; a second conduit disposed above the processing region to provide a portion of a second toroidal path that extends through the second conduit and across the processing region; an RF generator coupled to the first and second conduits to provide RF energy having a first frequency to each of the first and second conduits; an impedance matching network disposed between the RF generator and the first and second conduits; and a power divider to control the amount of RF energy provided to the first and second conduits from the RF generator.

7. 发明申请

US20120309114A1 METHODS FOR REPAIRING LOW-K DIELECTRICS USING CARBON PLASMA IMMERSION 有权
标题翻译：使用碳等离子体浸渍修复低K电介质的方法
公开(公告)号：US20120309114A1
公开(公告)日：2012-12-06
申请号：US13150843
申请日：2011-06-01
申请人： DAPING YAO , PETER I. PORSHNEV
发明人： DAPING YAO , PETER I. PORSHNEV
IPC分类号： H01L21/02
CPC分类号： H01L21/31155 , H01J37/32412 , H01L21/02126 , H01L21/02274 , H01L21/0228 , H01L21/02321 , H01L21/0234 , H01L21/3105 , H01L21/76814 , H01L21/76826 , H01L21/76831 , H01L2221/1063
摘要： Methods for repairing low-k dielectrics using a plasma immersion carbon doping process are provided herein. In some embodiments, a method of repairing a low-k dielectric material disposed on a substrate having one or more features disposed through the low-k dielectric material may include depositing a conformal oxide layer on the low-k dielectric material and within the one or more features; and doping the conformal oxide layer with carbon using a plasma doping process.
摘要翻译：本文提供了使用等离子体浸渍碳掺杂工艺修复低k电介质的方法。在一些实施例中，修复设置在具有通过低k电介质材料布置的一个或多个特征的衬底上的低k电介质材料的方法可以包括在低k电介质材料上以及在一个或多个更多功能; 并使用等离子体掺杂工艺用碳掺杂保形氧化物层。

8. 发明申请

US20120171855A1 METHODS TO ADJUST THRESHOLD VOLTAGE IN SEMICONDUCTOR DEVICES 有权
标题翻译：在半导体器件中调整阈值电压的方法
公开(公告)号：US20120171855A1
公开(公告)日：2012-07-05
申请号：US13190012
申请日：2011-07-25
申请人： MICHAEL G. WARD , IGOR V. PEIDOUS , SUNNY CHIANG , YEN B. TA , ANDREW DARLAK , PETER I. PORSHNEV , SWAMINATHAN SRINIVASAN
发明人： MICHAEL G. WARD , IGOR V. PEIDOUS , SUNNY CHIANG , YEN B. TA , ANDREW DARLAK , PETER I. PORSHNEV , SWAMINATHAN SRINIVASAN
IPC分类号： H01L21/28
CPC分类号： H01L21/823842 , H01J37/32412 , H01L21/28088 , H01L21/28202 , H01L21/28229 , H01L29/78
摘要： Methods for forming a device on a substrate are provided herein. In some embodiments, a method of forming a device on a substrate may include providing a substrate having a partially fabricated first device disposed on the substrate, the first device including a first film stack comprising a first dielectric layer and a first high-k dielectric layer disposed atop the first dielectric layer; depositing a first metal layer atop the first film stack; and modifying a first upper surface of the first metal layer to adjust a first threshold voltage of the first device, wherein the modification of the first upper surface does not extend through to a first lower surface of the first metal layer.
摘要翻译：本文提供了在基板上形成器件的方法。在一些实施例中，在衬底上形成器件的方法可以包括提供具有设置在衬底上的部分制造的第一器件的衬底，第一器件包括第一膜堆叠，其包括第一介电层和第一高k电介质层设置在第一电介质层的顶部; 在第一薄膜叠层顶上沉积第一金属层; 以及修改所述第一金属层的第一上表面以调整所述第一器件的第一阈值电压，其中所述第一上表面的修改不延伸穿过所述第一金属层的第一下表面。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式