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1. 发明授权

US08791440B1 Target for extreme ultraviolet light source 有权
标题翻译：瞄准极紫外光源
公开(公告)号：US08791440B1
公开(公告)日：2014-07-29
申请号：US13830380
申请日：2013-03-14
申请人： Cymer, Inc.
发明人： Yezheng Tao , Robert J. Rafac , Igor V. Fomenkov , Daniel J. W. Brown , Daniel J. Golich
IPC分类号： H01S3/10 , H01S3/13
CPC分类号： H05G2/008 , G21K5/02 , H01S3/10 , H05G2/005
摘要： Techniques for forming a target and for producing extreme ultraviolet light include releasing an initial target material toward a target location, the target material including a material that emits extreme ultraviolet (EUV) light when converted to plasma; directing a first amplified light beam toward the initial target material, the first amplified light beam having an energy sufficient to form a collection of pieces of target material from the initial target material, each of the pieces being smaller than the initial target material and being spatially distributed throughout a hemisphere shaped volume; and directing a second amplified light beam toward the collection of pieces to convert the pieces of target material to plasma that emits EUV light.
摘要翻译：用于形成靶和用于产生极紫外光的技术包括向目标位置释放初始目标材料，目标材料包括当转换成等离子体时发射极紫外（EUV）光的材料; 将第一放大光束引向初始目标材料，第一放大光束具有足以从初始目标材料形成目标材料的集合的能量，每个片段小于初始靶材料并且在空间上分布在整个半球形体积上; 以及将第二放大光束引导到所述收集件，以将所述目标材料片转换成发射EUV光的等离子体。

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