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1. 发明申请

US20160087537A1 HIGH POWER DENSITY, HIGH EFFICIENCY POWER ELECTRONIC CONVERTER 有权
标题翻译：高功率密度，高效率电力电子转换器
公开(公告)号：US20160087537A1
公开(公告)日：2016-03-24
申请号：US14493494
申请日：2014-09-23
申请人： Cree, Inc.
发明人： Adam Barkley , XueChao Liu , Marcelo Schupbach
IPC分类号： H02M3/335
CPC分类号： H02M3/33507 , H05B33/0815
摘要： AC to DC power electronic converter circuitry includes isolated converter circuitry and control circuitry coupled to the isolated converter circuitry. The isolated converter circuitry includes one or more wide bandgap switching components. The control circuitry is configured to drive at least one of the wide bandgap switching components such that the power electronic converter circuitry is configured to generate a DC output with an output power greater than 100W at an efficiency greater than 92%. Using wide bandgap components in the isolated converter circuitry allows the power electronic converter circuitry to achieve a high efficiency and high power density.
摘要翻译： AC到DC电力电子转换器电路包括耦合到隔离转换器电路的隔离转换器电路和控制电路。隔离的转换器电路包括一个或多个宽带隙切换部件。控制电路被配置为驱动宽带隙切换部件中的至少一个，使得电力电子转换器电路被配置为以大于92％的效率生成具有大于100W的输出功率的DC输出。在隔离转换器电路中使用宽带隙元件允许电力电子转换器电路实现高效率和高功率密度。

2. 发明申请

US20170040890A1 HIGH SPEED, EFFICIENT SIC POWER MODULE 审中-公开
标题翻译：高速，高效的SIC电源模块
公开(公告)号：US20170040890A1
公开(公告)日：2017-02-09
申请号：US15295599
申请日：2016-10-17
申请人： Cree, Inc.
发明人： Adam Barkley , Marcelo Schupbach
IPC分类号： H02M3/155 , H02M7/00 , H05K1/03 , H05K1/18 , H01L23/373 , H01L29/16 , H01L29/78 , H01L29/872 , H01L25/18 , H01L23/00 , H02M1/08 , H05K5/02
CPC分类号： H02M3/155 , B60L2210/00 , C04B37/026 , C04B2237/366 , C04B2237/368 , H01L23/15 , H01L23/3735 , H01L24/48 , H01L24/49 , H01L25/072 , H01L25/18 , H01L29/1608 , H01L2224/0603 , H01L2224/45015 , H01L2224/48011 , H01L2224/48091 , H01L2224/48157 , H01L2224/4903 , H01L2224/49111 , H01L2224/49431 , H01L2924/00014 , H01L2924/10272 , H01L2924/12032 , H01L2924/13091 , H01L2924/19105 , H02M1/08 , H02M1/44 , H02M7/003 , H02M2001/0054 , H02M2001/348 , H05K5/0256 , Y02B70/1483 , H01L2224/05599 , H01L2224/45099 , H01L2924/20751 , H01L2924/2075 , H01L2224/85399
摘要： A power converter module includes a baseplate, a substrate on the baseplate, one or more silicon carbide switching components on the substrate, and a housing over the baseplate, the substrate, and the one or more silicon carbide switching components. The housing has a footprint less than 25 cm2. Including a baseplate in a power converter module with a footprint less than 25 cm2 runs counter to accepted design principles for silicon and silicon carbide-based power converter modules, but may improve performance of the power converter module and/or decrease the cost of the power converter module.
摘要翻译：功率转换器模块包括基板，基板上的基板，基板上的一个或多个碳化硅切换部件，以及在基板，基板和一个或多个碳化硅切换部件上的壳体。外壳的占地面积小于25平方厘米。在基于硅和碳化硅的功率转换器模块的接受设计原理中，包括占地面积小于25 cm2的功率转换器模块中的底板与设计原理相反，但可以提高功率转换器模块的性能和/或降低功率成本转换器模块。

3. 发明申请

US20140246681A1 HIGH CURRENT, LOW SWITCHING LOSS SiC POWER MODULE 有权
标题翻译：高电流，低开关损耗SiC功率模块
公开(公告)号：US20140246681A1
公开(公告)日：2014-09-04
申请号：US14277820
申请日：2014-05-15
申请人： Cree, Inc.
发明人： Mrinal K. Das , Henry Lin , Marcelo Schupbach , John Williams Palmour
IPC分类号： H01L27/06
CPC分类号： H01L27/0629 , H01L21/046 , H01L21/049 , H01L24/48 , H01L24/49 , H01L25/072 , H01L25/18 , H01L29/1608 , H01L29/66068 , H01L29/7393 , H01L29/7802 , H01L29/872 , H01L2224/0603 , H01L2224/48137 , H01L2224/48139 , H01L2224/48227 , H01L2224/49111 , H01L2224/49113 , H01L2224/49175 , H01L2224/49431 , H01L2224/49433 , H01L2924/00014 , H01L2924/10272 , H01L2924/1033 , H01L2924/12032 , H01L2924/1301 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13062 , H01L2924/13064 , H01L2924/13091 , H01L2924/15153 , H01L2924/19105 , H01L2924/19107 , H01L2924/30107 , H02M7/003 , H02M7/5387 , H02P7/04 , H05K7/1432 , Y02B70/1483 , H01L2924/00 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A power module includes a housing with an interior chamber and multiple switch modules mounted within the interior chamber of the housing. The switch modules are interconnected and configured to facilitate switching power to a load. Each one of the switch modules includes at least one transistor and at least one diode. The at least one transistor and the at least one diode may be formed from a wide band-gap material system, such as silicon carbide (SiC), thereby allowing the power module to operate at high frequencies with lower switching losses when compared to conventional power modules.
摘要翻译：功率模块包括具有内室的壳体和安装在壳体的内室内的多个开关模块。交换机模块互连并配置成便于切换负载的电源。每个开关模块包括至少一个晶体管和至少一个二极管。至少一个晶体管和至少一个二极管可以由诸如碳化硅（SiC）的宽带隙材料系统形成，从而允许功率模块在与常规功率相比时具有较低开关损耗的高频率下工作模块。

4. 发明申请

US20200177079A1 HIGH SPEED, EFFICIENT SIC POWER MODULE 审中-公开
公开(公告)号：US20200177079A1
公开(公告)日：2020-06-04
申请号：US16784857
申请日：2020-02-07
申请人： Cree, Inc.
发明人： Mrinal K. Das , Adam Barkley , Henry Lin , Marcelo Schupbach
IPC分类号： H02M3/155 , H02M1/44 , H01L25/07 , H01L23/373 , H01L29/16 , H02M1/08 , H02M7/00 , H05K3/30
摘要： A power converter module includes an active metal braze (AMB) substrate, power converter circuitry, and a housing. The AMB substrate includes an aluminum nitride base layer, a first conductive layer on a first surface of the aluminum nitride base layer, and a second conductive layer on a second surface of the aluminum nitride base layer opposite the first surface. The power converter circuitry includes a number of silicon carbide switching components coupled to one another via the first conductive layer. The housing is over the power converter circuitry and the AMB substrate. By using an AMB substrate with an aluminum nitride base layer, the thermal dissipation characteristics of the power converter module may be substantially improved while maintaining the structural integrity of the power converter module.

5. 发明申请

US20160276927A1 HIGH SPEED, EFFICIENT SIC POWER MODULE 审中-公开
标题翻译：高速，高效的SIC电源模块
公开(公告)号：US20160276927A1
公开(公告)日：2016-09-22
申请号：US15055872
申请日：2016-02-29
申请人： Cree, Inc.
发明人： Mrinal K. Das , Adam Barkley , Henry Lin , Marcelo Schupbach
IPC分类号： H02M3/155 , H01L29/16 , H02M7/00 , H05K3/30 , H02M1/08
摘要： A power converter module includes an active metal braze (AMB) substrate, power converter circuitry, and a housing. The AMB substrate includes an aluminum nitride base layer, a first conductive layer on a first surface of the aluminum nitride base layer, and a second conductive layer on a second surface of the aluminum nitride base layer opposite the first surface. The power converter circuitry includes a number of silicon carbide switching components coupled to one another via the first conductive layer. The housing is over the power converter circuitry and the AMB substrate. By using an AMB substrate with an aluminum nitride base layer, the thermal dissipation characteristics of the power converter module may be substantially improved while maintaining the structural integrity of the power converter module.
摘要翻译：功率转换器模块包括有源金属钎焊（AMB）衬底，功率转换器电路和壳体。所述AMB基板包括氮化铝基底层，所述氮化铝基底层的第一表面上的第一导电层和与所述第一表面相对的所述氮化铝基底层的第二表面上的第二导电层。功率转换器电路包括经由第一导电层彼此耦合的多个碳化硅切换元件。外壳在功率转换器电路和AMB基板之上。通过使用具有氮化铝基底层的AMB衬底，可以在保持功率转换器模块的结构完整性的同时，显着改善功率转换器模块的散热特性。

6. 发明申请

US20200244164A1 HIGH SPEED, EFFICIENT SIC POWER MODULE 审中-公开
公开(公告)号：US20200244164A1
公开(公告)日：2020-07-30
申请号：US16851197
申请日：2020-04-17
申请人： Cree, Inc.
发明人： Mrinal K. Das , Adam Barkley , Henry Lin , Marcelo Schupbach
IPC分类号： H02M3/155 , H01L29/16 , H02M1/44 , H01L25/07 , H05K3/30 , H02M1/08 , H02M7/00 , H01L23/373
摘要： A power converter module includes an active metal braze (AMB) substrate, power converter circuitry, and a housing. The AMB substrate includes an aluminum nitride base layer, a first conductive layer on a first surface of the aluminum nitride base layer, and a second conductive layer on a second surface of the aluminum nitride base layer opposite the first surface. The power converter circuitry includes a number of silicon carbide switching components coupled to one another via the first conductive layer. The housing is over the power converter circuitry and the AMB substrate. By using an AMB substrate with an aluminum nitride base layer, the thermal dissipation characteristics of the power converter module may be substantially improved while maintaining the structural integrity of the power converter module.

7. 发明授权

US10680518B2 High speed, efficient SiC power module 有权
公开(公告)号：US10680518B2
公开(公告)日：2020-06-09
申请号：US15055872
申请日：2016-02-29
申请人： Cree, Inc.
发明人： Mrinal K. Das , Adam Barkley , Henry Lin , Marcelo Schupbach
IPC分类号： H02M1/44 , H01L25/07 , H01L23/373 , H01L29/16 , H02M1/08 , H02M7/00 , H05K3/30 , H02M3/155 , H02M1/34 , H02M1/00
摘要： A power converter module includes an active metal braze (AMB) substrate, power converter circuitry, and a housing. The AMB substrate includes an aluminum nitride base layer, a first conductive layer on a first surface of the aluminum nitride base layer, and a second conductive layer on a second surface of the aluminum nitride base layer opposite the first surface. The power converter circuitry includes a number of silicon carbide switching components coupled to one another via the first conductive layer. The housing is over the power converter circuitry and the AMB substrate. By using an AMB substrate with an aluminum nitride base layer, the thermal dissipation characteristics of the power converter module may be substantially improved while maintaining the structural integrity of the power converter module.

8. 发明授权

US10141302B2 High current, low switching loss SiC power module 有权
公开(公告)号：US10141302B2
公开(公告)日：2018-11-27
申请号：US15077329
申请日：2016-03-22
申请人： Cree, Inc.
发明人： Mrinal K. Das , Henry Lin , Marcelo Schupbach , John Williams Palmour
IPC分类号： H01L27/06 , H01L21/04 , H01L25/07 , H01L25/18 , H01L29/16 , H01L29/78 , H05K7/14 , H02P7/03 , H02M7/5387 , H02M7/00 , H01L23/00 , H01L29/66 , H01L29/739 , H01L29/872
摘要： A power module includes a housing with an interior chamber and multiple switch modules mounted within the interior chamber of the housing. The switch modules are interconnected and configured to facilitate switching power to a load. Each one of the switch modules includes at least one transistor and at least one diode. The at least one transistor and the at least one diode may be formed from a wide band-gap material system, such as silicon carbide (SiC), thereby allowing the power module to operate at high frequencies with lower switching losses when compared to conventional power modules.

9. 发明授权

US09373617B2 High current, low switching loss SiC power module 有权
标题翻译：高电流，低开关损耗SiC功率模块
公开(公告)号：US09373617B2
公开(公告)日：2016-06-21
申请号：US14277820
申请日：2014-05-15
申请人： Cree, Inc.
发明人： Mrinal K. Das , Henry Lin , Marcelo Schupbach , John Williams Palmour
IPC分类号： H01L29/15 , H01L27/06 , H01L21/04 , H01L25/07 , H01L25/18 , H01L29/78 , H01L29/16 , H05K7/14 , H01L29/66 , H01L23/00 , H02M7/00 , H02M7/5387 , H02P7/00 , H01L29/739 , H01L29/872
CPC分类号： H01L27/0629 , H01L21/046 , H01L21/049 , H01L24/48 , H01L24/49 , H01L25/072 , H01L25/18 , H01L29/1608 , H01L29/66068 , H01L29/7393 , H01L29/7802 , H01L29/872 , H01L2224/0603 , H01L2224/48137 , H01L2224/48139 , H01L2224/48227 , H01L2224/49111 , H01L2224/49113 , H01L2224/49175 , H01L2224/49431 , H01L2224/49433 , H01L2924/00014 , H01L2924/10272 , H01L2924/1033 , H01L2924/12032 , H01L2924/1301 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13062 , H01L2924/13064 , H01L2924/13091 , H01L2924/15153 , H01L2924/19105 , H01L2924/19107 , H01L2924/30107 , H02M7/003 , H02M7/5387 , H02P7/04 , H05K7/1432 , Y02B70/1483 , H01L2924/00 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A power module includes a housing with an interior chamber and multiple switch modules mounted within the interior chamber of the housing. The switch modules are interconnected and configured to facilitate switching power to a load. Each one of the switch modules includes at least one transistor and at least one diode. The at least one transistor and the at least one diode may be formed from a wide band-gap material system, such as silicon carbide (SiC), thereby allowing the power module to operate at high frequencies with lower switching losses when compared to conventional power modules.
摘要翻译：功率模块包括具有内室的壳体和安装在壳体的内室内的多个开关模块。交换机模块互连并配置成便于切换负载的电源。每个开关模块包括至少一个晶体管和至少一个二极管。至少一个晶体管和至少一个二极管可以由诸如碳化硅（SiC）的宽带隙材料系统形成，从而允许功率模块在与常规功率相比时具有较低开关损耗的高频率下工作模块。

10. 发明授权

US10269955B2 Vertical FET structure 有权
公开(公告)号：US10269955B2
公开(公告)日：2019-04-23
申请号：US15407689
申请日：2017-01-17
申请人： Cree, Inc.
发明人： Sei-Hyung Ryu , Marcelo Schupbach , Adam Barkley , Scott Allen
IPC分类号： H01L29/78 , H01L29/16 , H01L29/423 , H01L29/06 , H01L29/739 , H01L29/10
摘要： A vertical FET includes a silicon carbide substrate having a top surface and a bottom surface opposite the top surface; a drain/collector contact on the bottom surface of the silicon carbide substrate; and an epitaxial structure on the top surface of the silicon carbide substrate having formed therein a first source/emitter implant. A gate dielectric is provided on a portion of the epitaxial structure. First source/emitter contact segments are spaced apart from each other and on the first source/emitter implant. A first elongated gate contact and a second elongated gate contact are on the gate dielectric and positioned such that the first source/emitter implant is below and between the first elongated gate contact and the second elongated gate contact. Inter-gate plates extend from at least one of the first elongated gate contact and the second elongated gate contact into spaces formed between the first source/emitter contact segments.

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