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1. 发明授权

US11171229B2 Low switching loss high performance power module 有权
公开(公告)号：US11171229B2
公开(公告)日：2021-11-09
申请号：US15483039
申请日：2017-04-10
申请人： Cree, Inc.
发明人： Mrinal K. Das , Robert J. Callanan , Henry Lin , John Williams Palmour
IPC分类号： H05K7/14 , H01L29/78 , H01L29/16 , H01L27/06 , H01L23/00 , H01L25/07 , H01L25/18 , H01L21/04 , H01L29/739 , H01L29/06 , H02M7/00 , H02M7/5387 , H01L29/20 , H02M1/084 , H02P7/03 , H01L29/66 , H01L29/04 , H02P27/06
摘要： The present disclosure relates to a power module that has a housing with an interior chamber and a plurality of switch modules interconnected to facilitate switching power to a load. Each of the plurality of switch modules comprises at least one transistor and at least one diode mounted within the interior chamber and both the at least one transistor and the at least one diode are majority carrier devices, are formed of a wide bandgap material system, or both. The switching modules may be arranged in virtually any fashion depending on the application. For example, the switching modules may be arranged in a six-pack, full H-bridge, half H-bridge, single switch or the like.

2. 发明申请

US20140246681A1 HIGH CURRENT, LOW SWITCHING LOSS SiC POWER MODULE 有权
标题翻译：高电流，低开关损耗SiC功率模块
公开(公告)号：US20140246681A1
公开(公告)日：2014-09-04
申请号：US14277820
申请日：2014-05-15
申请人： Cree, Inc.
发明人： Mrinal K. Das , Henry Lin , Marcelo Schupbach , John Williams Palmour
IPC分类号： H01L27/06
CPC分类号： H01L27/0629 , H01L21/046 , H01L21/049 , H01L24/48 , H01L24/49 , H01L25/072 , H01L25/18 , H01L29/1608 , H01L29/66068 , H01L29/7393 , H01L29/7802 , H01L29/872 , H01L2224/0603 , H01L2224/48137 , H01L2224/48139 , H01L2224/48227 , H01L2224/49111 , H01L2224/49113 , H01L2224/49175 , H01L2224/49431 , H01L2224/49433 , H01L2924/00014 , H01L2924/10272 , H01L2924/1033 , H01L2924/12032 , H01L2924/1301 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13062 , H01L2924/13064 , H01L2924/13091 , H01L2924/15153 , H01L2924/19105 , H01L2924/19107 , H01L2924/30107 , H02M7/003 , H02M7/5387 , H02P7/04 , H05K7/1432 , Y02B70/1483 , H01L2924/00 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A power module includes a housing with an interior chamber and multiple switch modules mounted within the interior chamber of the housing. The switch modules are interconnected and configured to facilitate switching power to a load. Each one of the switch modules includes at least one transistor and at least one diode. The at least one transistor and the at least one diode may be formed from a wide band-gap material system, such as silicon carbide (SiC), thereby allowing the power module to operate at high frequencies with lower switching losses when compared to conventional power modules.
摘要翻译：功率模块包括具有内室的壳体和安装在壳体的内室内的多个开关模块。交换机模块互连并配置成便于切换负载的电源。每个开关模块包括至少一个晶体管和至少一个二极管。至少一个晶体管和至少一个二极管可以由诸如碳化硅（SiC）的宽带隙材料系统形成，从而允许功率模块在与常规功率相比时具有较低开关损耗的高频率下工作模块。

3. 发明申请

US20200177079A1 HIGH SPEED, EFFICIENT SIC POWER MODULE 审中-公开
公开(公告)号：US20200177079A1
公开(公告)日：2020-06-04
申请号：US16784857
申请日：2020-02-07
申请人： Cree, Inc.
发明人： Mrinal K. Das , Adam Barkley , Henry Lin , Marcelo Schupbach
IPC分类号： H02M3/155 , H02M1/44 , H01L25/07 , H01L23/373 , H01L29/16 , H02M1/08 , H02M7/00 , H05K3/30
摘要： A power converter module includes an active metal braze (AMB) substrate, power converter circuitry, and a housing. The AMB substrate includes an aluminum nitride base layer, a first conductive layer on a first surface of the aluminum nitride base layer, and a second conductive layer on a second surface of the aluminum nitride base layer opposite the first surface. The power converter circuitry includes a number of silicon carbide switching components coupled to one another via the first conductive layer. The housing is over the power converter circuitry and the AMB substrate. By using an AMB substrate with an aluminum nitride base layer, the thermal dissipation characteristics of the power converter module may be substantially improved while maintaining the structural integrity of the power converter module.

4. 发明申请

US20160276927A1 HIGH SPEED, EFFICIENT SIC POWER MODULE 审中-公开
标题翻译：高速，高效的SIC电源模块
公开(公告)号：US20160276927A1
公开(公告)日：2016-09-22
申请号：US15055872
申请日：2016-02-29
申请人： Cree, Inc.
发明人： Mrinal K. Das , Adam Barkley , Henry Lin , Marcelo Schupbach
IPC分类号： H02M3/155 , H01L29/16 , H02M7/00 , H05K3/30 , H02M1/08
摘要： A power converter module includes an active metal braze (AMB) substrate, power converter circuitry, and a housing. The AMB substrate includes an aluminum nitride base layer, a first conductive layer on a first surface of the aluminum nitride base layer, and a second conductive layer on a second surface of the aluminum nitride base layer opposite the first surface. The power converter circuitry includes a number of silicon carbide switching components coupled to one another via the first conductive layer. The housing is over the power converter circuitry and the AMB substrate. By using an AMB substrate with an aluminum nitride base layer, the thermal dissipation characteristics of the power converter module may be substantially improved while maintaining the structural integrity of the power converter module.
摘要翻译：功率转换器模块包括有源金属钎焊（AMB）衬底，功率转换器电路和壳体。所述AMB基板包括氮化铝基底层，所述氮化铝基底层的第一表面上的第一导电层和与所述第一表面相对的所述氮化铝基底层的第二表面上的第二导电层。功率转换器电路包括经由第一导电层彼此耦合的多个碳化硅切换元件。外壳在功率转换器电路和AMB基板之上。通过使用具有氮化铝基底层的AMB衬底，可以在保持功率转换器模块的结构完整性的同时，显着改善功率转换器模块的散热特性。

5. 发明申请

US20170213811A1 HIGH PERFORMANCE POWER MODULE 审中-公开
公开(公告)号：US20170213811A1
公开(公告)日：2017-07-27
申请号：US15483039
申请日：2017-04-10
申请人： Cree, Inc.
发明人： Mrinal K. Das , Robert J. Callanan , Henry Lin , John Williams Palmour
IPC分类号： H01L25/07 , H01L27/06 , H01L29/06 , H01L29/739 , H02M1/084 , H01L29/20 , H01L23/00 , H02M7/5387 , H02M7/00 , H01L29/16 , H01L29/78
CPC分类号： H01L29/7806 , H01L21/046 , H01L21/049 , H01L24/48 , H01L24/49 , H01L25/072 , H01L25/18 , H01L27/0629 , H01L29/045 , H01L29/0696 , H01L29/1608 , H01L29/2003 , H01L29/66068 , H01L29/7395 , H01L29/7802 , H01L29/7805 , H01L2224/0603 , H01L2224/48137 , H01L2224/48139 , H01L2224/48227 , H01L2224/4903 , H01L2224/49111 , H01L2224/49175 , H01L2924/00014 , H01L2924/12032 , H01L2924/1301 , H01L2924/1305 , H01L2924/13055 , H01L2924/13062 , H01L2924/13091 , H01L2924/15153 , H01L2924/19105 , H01L2924/19107 , H01L2924/30107 , H02M1/084 , H02M7/003 , H02M7/5387 , H02P7/04 , H02P27/06 , H05K7/1432 , H01L2924/00 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： The present disclosure relates to a power module that has a housing with an interior chamber and a plurality of switch modules interconnected to facilitate switching power to a load. Each of the plurality of switch modules comprises at least one transistor and at least one diode mounted within the interior chamber and both the at least one transistor and the at least one diode are majority carrier devices, are formed of a wide bandgap material system, or both. The switching modules may be arranged in virtually any fashion depending on the application. For example, the switching modules may be arranged in a six-pack, full H-bridge, half H-bridge, single switch or the like.

6. 发明申请

US20200244164A1 HIGH SPEED, EFFICIENT SIC POWER MODULE 审中-公开
公开(公告)号：US20200244164A1
公开(公告)日：2020-07-30
申请号：US16851197
申请日：2020-04-17
申请人： Cree, Inc.
发明人： Mrinal K. Das , Adam Barkley , Henry Lin , Marcelo Schupbach
IPC分类号： H02M3/155 , H01L29/16 , H02M1/44 , H01L25/07 , H05K3/30 , H02M1/08 , H02M7/00 , H01L23/373
摘要： A power converter module includes an active metal braze (AMB) substrate, power converter circuitry, and a housing. The AMB substrate includes an aluminum nitride base layer, a first conductive layer on a first surface of the aluminum nitride base layer, and a second conductive layer on a second surface of the aluminum nitride base layer opposite the first surface. The power converter circuitry includes a number of silicon carbide switching components coupled to one another via the first conductive layer. The housing is over the power converter circuitry and the AMB substrate. By using an AMB substrate with an aluminum nitride base layer, the thermal dissipation characteristics of the power converter module may be substantially improved while maintaining the structural integrity of the power converter module.

7. 发明授权

US10680518B2 High speed, efficient SiC power module 有权
公开(公告)号：US10680518B2
公开(公告)日：2020-06-09
申请号：US15055872
申请日：2016-02-29
申请人： Cree, Inc.
发明人： Mrinal K. Das , Adam Barkley , Henry Lin , Marcelo Schupbach
IPC分类号： H02M1/44 , H01L25/07 , H01L23/373 , H01L29/16 , H02M1/08 , H02M7/00 , H05K3/30 , H02M3/155 , H02M1/34 , H02M1/00
摘要： A power converter module includes an active metal braze (AMB) substrate, power converter circuitry, and a housing. The AMB substrate includes an aluminum nitride base layer, a first conductive layer on a first surface of the aluminum nitride base layer, and a second conductive layer on a second surface of the aluminum nitride base layer opposite the first surface. The power converter circuitry includes a number of silicon carbide switching components coupled to one another via the first conductive layer. The housing is over the power converter circuitry and the AMB substrate. By using an AMB substrate with an aluminum nitride base layer, the thermal dissipation characteristics of the power converter module may be substantially improved while maintaining the structural integrity of the power converter module.

8. 发明授权

US10141302B2 High current, low switching loss SiC power module 有权
公开(公告)号：US10141302B2
公开(公告)日：2018-11-27
申请号：US15077329
申请日：2016-03-22
申请人： Cree, Inc.
发明人： Mrinal K. Das , Henry Lin , Marcelo Schupbach , John Williams Palmour
IPC分类号： H01L27/06 , H01L21/04 , H01L25/07 , H01L25/18 , H01L29/16 , H01L29/78 , H05K7/14 , H02P7/03 , H02M7/5387 , H02M7/00 , H01L23/00 , H01L29/66 , H01L29/739 , H01L29/872
摘要： A power module includes a housing with an interior chamber and multiple switch modules mounted within the interior chamber of the housing. The switch modules are interconnected and configured to facilitate switching power to a load. Each one of the switch modules includes at least one transistor and at least one diode. The at least one transistor and the at least one diode may be formed from a wide band-gap material system, such as silicon carbide (SiC), thereby allowing the power module to operate at high frequencies with lower switching losses when compared to conventional power modules.

9. 发明授权

US09373617B2 High current, low switching loss SiC power module 有权
标题翻译：高电流，低开关损耗SiC功率模块
公开(公告)号：US09373617B2
公开(公告)日：2016-06-21
申请号：US14277820
申请日：2014-05-15
申请人： Cree, Inc.
发明人： Mrinal K. Das , Henry Lin , Marcelo Schupbach , John Williams Palmour
IPC分类号： H01L29/15 , H01L27/06 , H01L21/04 , H01L25/07 , H01L25/18 , H01L29/78 , H01L29/16 , H05K7/14 , H01L29/66 , H01L23/00 , H02M7/00 , H02M7/5387 , H02P7/00 , H01L29/739 , H01L29/872
CPC分类号： H01L27/0629 , H01L21/046 , H01L21/049 , H01L24/48 , H01L24/49 , H01L25/072 , H01L25/18 , H01L29/1608 , H01L29/66068 , H01L29/7393 , H01L29/7802 , H01L29/872 , H01L2224/0603 , H01L2224/48137 , H01L2224/48139 , H01L2224/48227 , H01L2224/49111 , H01L2224/49113 , H01L2224/49175 , H01L2224/49431 , H01L2224/49433 , H01L2924/00014 , H01L2924/10272 , H01L2924/1033 , H01L2924/12032 , H01L2924/1301 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13062 , H01L2924/13064 , H01L2924/13091 , H01L2924/15153 , H01L2924/19105 , H01L2924/19107 , H01L2924/30107 , H02M7/003 , H02M7/5387 , H02P7/04 , H05K7/1432 , Y02B70/1483 , H01L2924/00 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A power module includes a housing with an interior chamber and multiple switch modules mounted within the interior chamber of the housing. The switch modules are interconnected and configured to facilitate switching power to a load. Each one of the switch modules includes at least one transistor and at least one diode. The at least one transistor and the at least one diode may be formed from a wide band-gap material system, such as silicon carbide (SiC), thereby allowing the power module to operate at high frequencies with lower switching losses when compared to conventional power modules.
摘要翻译：功率模块包括具有内室的壳体和安装在壳体的内室内的多个开关模块。交换机模块互连并配置成便于切换负载的电源。每个开关模块包括至少一个晶体管和至少一个二极管。至少一个晶体管和至少一个二极管可以由诸如碳化硅（SiC）的宽带隙材料系统形成，从而允许功率模块在与常规功率相比时具有较低开关损耗的高频率下工作模块。

10. 发明授权

US09640617B2 High performance power module 有权
公开(公告)号：US09640617B2
公开(公告)日：2017-05-02
申请号：US13893998
申请日：2013-05-14
申请人： Cree, Inc.
发明人： Mrinal K. Das , Robert J. Callanan , Henry Lin , John Williams Palmour
IPC分类号： H01L29/16 , H01L27/06 , H01L21/04 , H01L29/739 , H01L29/78 , H01L29/06 , H01L25/18 , H05K7/14 , H01L29/66 , H01L29/04 , H02M7/00 , H02M7/5387 , H01L23/00 , H01L25/07 , H02P7/03
CPC分类号： H01L29/7806 , H01L21/046 , H01L21/049 , H01L24/48 , H01L24/49 , H01L25/072 , H01L25/18 , H01L27/0629 , H01L29/045 , H01L29/0696 , H01L29/1608 , H01L29/2003 , H01L29/66068 , H01L29/7395 , H01L29/7802 , H01L29/7805 , H01L2224/0603 , H01L2224/48137 , H01L2224/48139 , H01L2224/48227 , H01L2224/4903 , H01L2224/49111 , H01L2224/49175 , H01L2924/00014 , H01L2924/12032 , H01L2924/1301 , H01L2924/1305 , H01L2924/13055 , H01L2924/13062 , H01L2924/13091 , H01L2924/15153 , H01L2924/19105 , H01L2924/19107 , H01L2924/30107 , H02M1/084 , H02M7/003 , H02M7/5387 , H02P7/04 , H02P27/06 , H05K7/1432 , H01L2924/00 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： The present disclosure relates to a power module that has a housing with an interior chamber and a plurality of switch modules interconnected to facilitate switching power to a load. Each of the plurality of switch modules comprises at least one transistor and at least one diode mounted within the interior chamber and both the at least one transistor and the at least one diode are majority carrier devices, are formed of a wide bandgap material system, or both. The switching modules may be arranged in virtually any fashion depending on the application. For example, the switching modules may be arranged in a six-pack, full H-bridge, half H-bridge, single switch or the like.

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