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1. 发明授权

US06800172B2 INTERFACIAL STRUCTURE FOR SEMICONDUCTOR SUBSTRATE PROCESSING CHAMBERS AND SUBSTRATE TRANSFER CHAMBERS AND FOR SEMICONDUCTOR SUBSTRATE PROCESSING CHAMBERS AND ACCESSORY ATTACHMENTS, AND SEMICONDUCTOR SUBSTRATE PROCESSOR 失效
标题翻译：半导体基板加工板和基板转移板和半导体基板加工板和附件附件的界面结构以及半导体基板处理器
公开(公告)号：US06800172B2
公开(公告)日：2004-10-05
申请号：US10082599
申请日：2002-02-22
申请人： Craig M. Carpenter , Ross S. Dando , Allen P. Mardian , Kevin T. Hamer , Raynald B. Cantin , Philip H. Campbell , Kimberly R. Tschepen , Randy W. Mercil
发明人： Craig M. Carpenter , Ross S. Dando , Allen P. Mardian , Kevin T. Hamer , Raynald B. Cantin , Philip H. Campbell , Kimberly R. Tschepen , Randy W. Mercil
IPC分类号： C23F100
CPC分类号： H01L21/67126 , C23C16/4409 , C23C16/54 , Y10S414/139
摘要： A semiconductor substrate processor includes a substrate transfer chamber and a plurality of substrate processing chambers connected therewith. An interfacial structure is received between at least one of the processing chambers and the transfer chamber. The interfacial structure includes a substantially non-metallic, thermally insulative mass of material interposed between the one processing chamber and the transfer chamber. The mass is of sufficient volume to effectively reduce heat transfer from the processing chamber to the transfer chamber than would otherwise occur in the absence of said mass of material. An interfacial structure includes a body having a substrate passageway extending therethrough. The passageway includes walls at least a portion of which are substantially metallic. The body includes material peripheral of the walls which is substantially non-metallic and thermally insulative. The substantially non-metallic material has mounting openings extending at least partially therein.
摘要翻译：半导体衬底处理器包括衬底传送室和与之连接的多个衬底处理室。在至少一个处理室和传送室之间接收界面结构。界面结构包括插入在一个处理室和传送室之间的基本上非金属的绝热材料块。质量足够的体积以有效地减少从处理室到传送室的传热比否则不存在所述材料块的情况。界面结构包括具有延伸穿过其中的基底通道的主体。该通道包括其至少一部分基本上是金属的壁。主体包括基本上非金属和热绝缘的壁的材料周边。基本上非金属材料具有其中至少部分延伸的安装开口。

2. 发明授权

US07192487B2 Semiconductor substrate processing chamber and accessory attachment interfacial structure 失效
标题翻译：半导体衬底处理室和附件附件界面结构
公开(公告)号：US07192487B2
公开(公告)日：2007-03-20
申请号：US10695727
申请日：2003-10-28
申请人： Craig M. Carpenter , Ross S. Dando , Allen P. Mardian , Kevin T. Hamer , Raynald B. Cantin , Philip H. Campbell , Kimberly R. Tschepen , Randy W. Mercil
发明人： Craig M. Carpenter , Ross S. Dando , Allen P. Mardian , Kevin T. Hamer , Raynald B. Cantin , Philip H. Campbell , Kimberly R. Tschepen , Randy W. Mercil
IPC分类号： C23C16/00 , C23F1/00 , H01L21/301
CPC分类号： H01L21/67126 , C23C16/4409 , C23C16/54 , Y10S414/139
摘要： A semiconductor substrate processor includes a substrate transfer chamber and a plurality of substrate processing chambers connected therewith. An interfacial structure is received between at least one of the processing chambers and the transfer chamber. The interfacial structure includes a substantially non-metallic, thermally insulative mass of material interposed between the one processing chamber and the transfer chamber. The mass is of sufficient volume to effectively reduce heat transfer from the processing chamber to the transfer chamber than would otherwise occur in the absence of said mass of material. An interfacial structure includes a body having a substrate passageway extending therethrough. The passageway includes walls at least a portion of which are substantially metallic. The body includes material peripheral of the walls which is substantially non-metallic and thermally insulative. The substantially non-metallic material has mounting openings extending at least partially therein.
摘要翻译：半导体衬底处理器包括衬底传送室和与之连接的多个衬底处理室。在至少一个处理室和传送室之间接收界面结构。界面结构包括插入在一个处理室和传送室之间的基本上非金属的绝热材料块。质量足够的体积以有效地减少从处理室到传送室的传热比否则不存在所述材料块的情况。界面结构包括具有延伸穿过其中的基底通道的主体。该通道包括其至少一部分基本上是金属的壁。主体包括基本上非金属和热绝缘的壁的材料周边。基本上非金属材料具有其中至少部分延伸的安装开口。

3. 发明授权

US06821347B2 Apparatus and method for depositing materials onto microelectronic workpieces 失效
公开(公告)号：US06821347B2
公开(公告)日：2004-11-23
申请号：US10191889
申请日：2002-07-08
申请人： Craig M. Carpenter , Allen P. Mardian , Ross S. Dando , Kimberly R. Tschepen , Garo J. Derderian
发明人： Craig M. Carpenter , Allen P. Mardian , Ross S. Dando , Kimberly R. Tschepen , Garo J. Derderian
IPC分类号： B05C318
CPC分类号： C23C16/45544 , C23C16/45565
摘要： Reactors for vapor deposition of materials onto a microelectronic workpiece, systems that include such reactors, and methods for depositing materials onto microelectronic workpieces. In one embodiment, a reactor for vapor deposition of a material comprises a reaction chamber and a gas distributor. The reaction chamber can include an inlet and an outlet. The gas distributor is positioned in the reaction chamber. The gas distributor has a compartment coupled to the inlet to receive a gas flow and a distributor plate including a first surface facing the compartment, a second surface facing the reaction chamber, and a plurality of passageways. The passageways extend through the distributor plate from the first surface to the second surface. Additionally, at least one of the passageways has at least a partially occluded flow path through the plate. For example, the occluded passageway can be canted at an oblique angle relative to the first surface of the distributor plate so that gas flowing through the canted passageway changes direction as it passes through the distributor plate.

4. 发明授权

US07387685B2 Apparatus and method for depositing materials onto microelectronic workpieces 失效
标题翻译：将材料沉积到微电子工件上的装置和方法
公开(公告)号：US07387685B2
公开(公告)日：2008-06-17
申请号：US10933604
申请日：2004-09-02
申请人： Craig M. Carpenter , Allen P. Mardian , Ross S. Dando , Kimberly R. Tschepen , Garo J. Derderian
发明人： Craig M. Carpenter , Allen P. Mardian , Ross S. Dando , Kimberly R. Tschepen , Garo J. Derderian
IPC分类号： C23C16/455 , C23C16/00 , H01L21/3065
CPC分类号： C23C16/45544 , C23C16/45565
摘要： Reactors for vapor deposition of materials onto a microelectronic workpiece, systems that include such reactors, and methods for depositing materials onto microelectronic workpieces. In one embodiment, a reactor for vapor deposition of a material comprises a reaction chamber and a gas distributor. The reaction chamber can include an inlet and an outlet. The gas distributor is positioned in the reaction chamber. The gas distributor has a compartment coupled to the inlet to receive a gas flow and a distributor plate including a first surface facing the compartment, a second surface facing the reaction chamber, and a plurality of passageways. The passageways extend through the distributor plate from the first surface to the second surface. Additionally, at least one of the passageways has at least a partially occluded flow path through the plate. For example, the occluded passageway can be canted at an oblique angle relative to the first surface of the distributor plate so that gas flowing through the canted passageway changes direction as it passes through the distributor plate.
摘要翻译：用于将材料气相沉积到微电子工件上的反应器，包括这种反应器的系统以及将材料沉积到微电子工件上的方法。在一个实施方案中，用于气相沉积材料的反应器包括反应室和气体分配器。反应室可以包括入口和出口。气体分配器位于反应室中。气体分配器具有联接到入口以接收气流的隔室和分布板，分配器板包括面向隔室的第一表面，面对反应室的第二表面和多个通道。通道从第一表面延伸穿过分配器板到第二表面。此外，至少一个通道具有穿过板的至少一部分闭塞的流动路径。例如，封闭通道可以相对于分配器板的第一表面倾斜地倾斜，使得流过倾斜通道的气体在通过分配器板时改变方向。

5. 发明授权

US06858264B2 Chemical vapor deposition methods 失效
标题翻译：化学气相沉积法
公开(公告)号：US06858264B2
公开(公告)日：2005-02-22
申请号：US10132003
申请日：2002-04-24
申请人： Ross S. Dando , Philip H. Campbell , Craig M. Carpenter , Allen P. Mardian
发明人： Ross S. Dando , Philip H. Campbell , Craig M. Carpenter , Allen P. Mardian
IPC分类号： C23C16/44 , C23C16/56
CPC分类号： C23C16/4405 , C23C16/4412
摘要： A chemical vapor deposition chamber has a vacuum exhaust line extending therefrom. Material is deposited over a first plurality of substrates within the deposition chamber under conditions effective to deposit effluent product over internal walls of the vacuum exhaust line. At least a portion of the vacuum exhaust line is isolated from the deposition chamber. While isolating, a cleaning fluid is flowed to the vacuum exhaust line effective to at least reduce thickness of the effluent product over the internal walls within the vacuum exhaust line from what it was prior to initiating said flowing. After said flowing, the portion of the vacuum exhaust line and the deposition chamber are provided in fluid communication with one another and material is deposited over a second plurality of substrates within the deposition chamber under conditions effective to deposit effluent product over internal walls of the vacuum exhaust line.
摘要翻译：化学气相沉积室具有从其延伸的真空排气管。在有效地将流出物产物沉积在真空排气管的内壁上的条件下，材料沉积在沉积室内的第一组多个衬底上。真空排气管线的至少一部分与沉积室隔离。在分离时，清洁流体流到真空排气管线，有效地至少将真空排气管内的内壁上的流出物的厚度从起始流动之前的厚度减小到最小。在所述流动之后，真空排气管线和沉积室的部分设置成彼此流体连通，并且在有效地将流出物产物沉积在真空内壁上的条件下，在沉积室内的第二多个基板上沉积材料排气管路。

6. 发明授权

US06787373B2 Method of replacing at least a portion of semiconductor substrate deposition process kit hardware, and method of depositing materials over a plurality of semiconductor substrates 失效
标题翻译：替代半导体衬底沉积工艺组件硬件的至少一部分的方法以及在多个半导体衬底上沉积材料的方法
公开(公告)号：US06787373B2
公开(公告)日：2004-09-07
申请号：US10396268
申请日：2003-03-24
申请人： Ross S. Dando , Craig M. Carpenter , Philip H. Campbell , Allen P. Mardian , Gurtej S. Sandhu
发明人： Ross S. Dando , Craig M. Carpenter , Philip H. Campbell , Allen P. Mardian , Gurtej S. Sandhu
IPC分类号： H01L2100
CPC分类号： C23C16/4401 , C23C16/54 , Y10S414/137
摘要： The invention includes an engagement mechanism for semiconductor substrate deposition process kit hardware, including a body having a distal portion and a proximal portion. The body is sized for movement through a passageway of a semiconductor substrate deposition chamber through which semiconductor substrates pass into and out of the chamber for deposition processing. At least engager is mounted to the distal portion of the body The engager is sized for movement through said passageway with the body. The engager is configured to releasably engage a component of process kit hardware received within said chamber. The invention includes methods of replacing at least a portion of semiconductor substrate deposition process kit hardware. The invention includes methods of depositing materials over a plurality of semiconductor substrates. Other implementations are contemplated.
摘要翻译：本发明包括用于半导体衬底沉积工艺组件硬件的接合机构，包括具有远端部分和近端部分的本体。本体的尺寸适于通过半导体衬底沉积室的通道移动，半导体衬底通过该通道进入和离开用于沉积处理的腔室。至少该夹具安装到身体的远端部分。接合器的尺寸适合于通过身体的所述通道移动。接合器构造成可释放地接合在所述室内容纳的处理套件硬件的部件。本发明包括替换半导体衬底沉积工艺组件硬件的至少一部分的方法。本发明包括在多个半导体衬底上沉积材料的方法。考虑其他实现。

7. 发明授权

US07234412B2 Semiconductor substrate deposition processor chamber liner apparatus 失效
标题翻译：半导体衬底沉积处理器室衬套装置
公开(公告)号：US07234412B2
公开(公告)日：2007-06-26
申请号：US10350554
申请日：2003-01-23
申请人： Craig M. Carpenter , Ross S. Dando , Philip H. Campbell , Allen P. Mardian , Gurtej S. Sandhu
发明人： Craig M. Carpenter , Ross S. Dando , Philip H. Campbell , Allen P. Mardian , Gurtej S. Sandhu
IPC分类号： C23C16/00
CPC分类号： C23C16/54 , C23C16/4401
摘要： A method includes removing at least a piece of a deposition chamber liner from a deposition chamber by passing it through a passageway to the deposition chamber through which semiconductor substrates pass into and out of the chamber for deposition processing. A replacement for the removed deposition chamber liner piece is provided into the chamber by passing the replacement through said passageway. A liner apparatus includes a plurality of pieces which when assembled within a selected semiconductor substrate deposition processor chamber are configured to restrict at least a majority portion of all internal wall surfaces which define said semiconductor substrate deposition processor chamber from exposure to deposition material within the chamber. At least some of the pieces are sized for passing completely through a substrate passageway to the chamber through which semiconductor substrates pass into and out of the chamber for deposition processing.
摘要翻译：一种方法包括通过将沉积室衬套通过通道传送到沉积室，通过半导体衬底通过其进入和离开室进行沉积处理，从沉积室去除至少一块沉积室衬里。通过使替换通过所述通道，将移除的沉积室衬垫件的替代物提供到腔室中。衬套装置包括多个片段，当组装在所选择的半导体衬底沉积处理器室中时，其被限定为限定所述半导体衬底沉积处理器室的所有内壁表面的至少大部分部分暴露于腔室内的沉积材料。至少一些片的尺寸被设计成完全通过衬底通道到半导体衬底通过其进入和离开室以进行沉积处理的室。

8. 发明授权

US07185601B2 Chemically sensitive warning apparatus and method 失效
标题翻译：化学敏感报警装置及方法
公开(公告)号：US07185601B2
公开(公告)日：2007-03-06
申请号：US09798672
申请日：2001-03-01
申请人： Craig M. Carpenter , Allen P. Mardian , Philip H. Campbell , Ross S. Dando
发明人： Craig M. Carpenter , Allen P. Mardian , Philip H. Campbell , Ross S. Dando
IPC分类号： G01N31/22
CPC分类号： G01N21/78 , G01N21/293 , Y10S116/14
摘要： A chemically sensitive warning apparatus capable of changing colors upon contact with a chemical is disclosed. The apparatus preferably comprises an elongated tape having opposed, first and second major surfaces and warning indicia visible to an individual viewing the first surface to provide visual indication of possible danger or hazardous condition. Mounted to the tape is at least one chemical indicator that is responsive to the presence of at least one chemical by changing colors so as to provide a visual indication of the exposure of the indicator to the chemical. The tape may also include at least one color reference indicia to facilitate interpretation of the color of the chemical indicator when the chemical indicator changes color upon exposure to the chemical.
摘要翻译：公开了能够在与化学品接触时改变颜色的化学敏感警报装置。该装置优选地包括具有相对的第一和第二主表面的细长带，并且警告标记对于观看第一表面的个体可见以提供可能的危险或危险状况的视觉指示。安装到胶带上的是至少一种化学指示剂，其通过改变颜色来响应至少一种化学品的存在，从而提供指示剂暴露于化学品的视觉指示。当化学品指示剂在暴露于化学品时变色时，胶带还可以包括至少一个颜色参考标记，以便于解释化学指示剂的颜色。

9. 发明授权

US06620253B1 Engagement mechanism for semiconductor substrate deposition process kit hardware 失效
标题翻译：半导体衬底沉积工艺套件硬件的配合机制
公开(公告)号：US06620253B1
公开(公告)日：2003-09-16
申请号：US10163671
申请日：2002-06-05
申请人： Ross S. Dando , Craig M. Carpenter , Philip H. Campbell , Allen P. Mardian , Gurtej S. Sandhu
发明人： Ross S. Dando , Craig M. Carpenter , Philip H. Campbell , Allen P. Mardian , Gurtej S. Sandhu
IPC分类号： C23C1600
CPC分类号： C23C16/4401 , C23C16/54 , Y10S414/137
摘要： The invention includes an engagement mechanism for semiconductor substrate deposition process kit hardware, including a body having a distal portion and a proximal portion. The body is sized for movement through a passageway of a semiconductor substrate deposition chamber through which semiconductor substrates pass into and out of the chamber for deposition processing. At least engager is mounted to the distal portion of the body The engager is sized for movement through said passageway with the body. The engager is configured to releasably engage a component of process kit hardware received within said chamber. The invention includes methods of replacing at least a portion of semiconductor substrate deposition process kit hardware. The invention includes methods of depositing materials over a plurality of semiconductor substrates. Other implementations are contemplated.
摘要翻译：本发明包括用于半导体衬底沉积工艺组件硬件的接合机构，包括具有远端部分和近端部分的本体。本体的尺寸适于通过半导体衬底沉积室的通道移动，半导体衬底通过该通道进入和离开用于沉积处理的腔室。至少吸入器被安装到身体的远端部分。接合器的尺寸适于通过身体与所述通道一起移动。接合器构造成可释放地接合在所述室内容纳的处理套件硬件的部件。本发明包括替换半导体衬底沉积工艺组件硬件的至少一部分的方法。本发明包括在多个半导体衬底上沉积材料的方法。考虑其他实现。

10. 发明授权

US07311947B2 Laser assisted material deposition 有权
标题翻译：激光辅助材料沉积
公开(公告)号：US07311947B2
公开(公告)日：2007-12-25
申请号：US10683806
申请日：2003-10-10
申请人： Ross S. Dando , Dan Gealy , Craig M. Carpenter , Philip H. Campbell , Allen P. Mardian
发明人： Ross S. Dando , Dan Gealy , Craig M. Carpenter , Philip H. Campbell , Allen P. Mardian
IPC分类号： C23C14/28
CPC分类号： H01L21/02271 , C23C16/45523 , C23C16/483 , H01L21/0228 , H01L21/3141 , H01L29/78
摘要： A method of forming a film on a substrate includes activating a gas precursor to form a material on the substrate by irradiating the gas precursor with electromagnetic energy at a frequency tuned to an absorption frequency of the gas precursor.
摘要翻译：在衬底上形成膜的方法包括通过用调谐到气体前体的吸收频率的频率的电磁能照射气体前体来激活气体前体以在衬底上形成材料。

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