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1. 发明授权

US08637960B2 Nitride semiconductor substrate 有权
标题翻译：氮化物半导体衬底
公开(公告)号：US08637960B2
公开(公告)日：2014-01-28
申请号：US13633473
申请日：2012-10-02
申请人： Covalent Materials Corporation
发明人： Yoshihisa Abe , Jun Komiyama , Hiroshi Oishi , Akira Yoshida , Kenichi Eriguchi , Shunichi Suzuki
IPC分类号： H01L29/20
CPC分类号： H01L29/155 , H01L29/2003 , H01L29/7787
摘要： A nitride semiconductor substrate is provided in which leak current reduction and improvement in current collapse are effectively attained when using Si single crystal as a base substrate. The nitride semiconductor substrate is such that an active layer of a nitride semiconductor is formed on one principal plane of a Si single crystal substrate through a plurality of buffer layers made of a nitride, in the buffer layers, a carbon concentration of a layer which is in contact with at least the active layer is from 1×1018 to 1×1020 atoms/cm3, a ratio of a screw dislocation density to the total dislocation density is from 0.15 to 0.3 in an interface region between the buffer layer and the active layer, and the total dislocation density in the interface region is 15×109 cm−2 or less.
摘要翻译：提供一种氮化物半导体衬底，其中当使用Si单晶作为基底衬底时，可有效地获得漏电流的减小和电流塌陷的改善。氮化物半导体衬底是这样的：氮化物半导体的有源层通过在氮化物中形成的多个缓冲层在Si单晶衬底的一个主平面上形成在缓冲层中的层的碳浓度为与至少活性层接触为1×1018〜1×1020原子/ cm3，在缓冲层和活性层之间的界面区域中，螺旋位错密度与总位错密度的比例为0.15〜0.3 界面区域的总位错密度为15×109cm -2以下。

2. 发明授权

US09536955B2 Nitride semiconductor substrate 有权
标题翻译：氮化物半导体衬底
公开(公告)号：US09536955B2
公开(公告)日：2017-01-03
申请号：US14258181
申请日：2014-04-22
申请人： COVALENT MATERIALS CORPORATION
发明人： Jun Komiyama , Kenichi Eriguchi , Akira Yoshida , Hiroshi Oishi , Yoshihisa Abe , Shunichi Suzuki
IPC分类号： H01L29/205 , H01L29/20 , H01L29/167 , H01L29/165 , H01L21/02 , H01L29/04 , H01L29/778
CPC分类号： H01L29/2003 , H01L21/02381 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/02658 , H01L29/045 , H01L29/7786
摘要： A nitride semiconductor substrate is provided which is suitable for a high withstand voltage power device and prevents a warp and a crack from generating in a Si substrate when forming a thick nitride semiconductor layer on the substrate. A nitride semiconductor substrate 1 is prepared in such a manner that a buffer layer 3 and a semiconductor active layer 4 each comprising a group 13 nitride are stacked one by one on one principal plane of a Si single crystal substrate, the one principal plane has an offset angle of 0.1° to 1° or −1° to −0.1° with respect to a (111) plane, an average dopant concentration in a bulk is 1×1018 to 1×1021 cm−3, the Si single crystal substrate 2 has a SiO2 film on the back, and the total thickness of the buffer layer 3 and the semiconductor active layer 4 is 4 to 10 μm.
摘要翻译：提供一种氮化物半导体衬底，其适用于高耐压功率器件，并且在衬底上形成厚的氮化物半导体层时，可防止在Si衬底中产生翘曲和裂纹。制备氮化物半导体衬底1，使得每个包含13族氮化物的缓冲层3和半导体活性层4在Si单晶衬底的一个主平面上逐一层叠，一个主平面具有偏移角相对于（111）面为0.1°〜1°或-1°〜-0.1°，本体的平均掺杂剂浓度为1×1018〜1×1021cm-3，Si单晶基板2 在背面具有SiO 2膜，缓冲层3和半导体活性层4的总厚度为4〜10μm。

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