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1. 发明申请

US20200343414A1 PROCESS FOR FABRICATING AN OPTOELECTRONIC DEVICE FOR EMITTING INFRARED LIGHT COMPRISING A GeSn-BASED ACTIVE LAYER 审中-公开
公开(公告)号：US20200343414A1
公开(公告)日：2020-10-29
申请号：US16583705
申请日：2019-09-26
申请人： Commissariat A L'Energie Atomique et aux Energies Alternatives
发明人： Vincent REBOUD , Alexei TCHELNOKOV , Julie WIDIEZ
IPC分类号： H01L33/40 , H01L33/34 , H01L33/00 , H01S5/183 , H01S5/343
摘要： The invention relates to a process for fabricating an optoelectronic device (1) for emitting infrared radiation, comprising the following steps: i) producing a first stack (10) comprising: alight source (11), a first bonding sublayer (17) made from a metal of interest chosen from gold, titanium and copper, ii) producing a second stack (20) comprising: a GeSn-based active layer (23) obtained by epitaxy at an epitaxy temperature (Tepi), a second bonding sublayer (25) made from said metal of interest, iii) determining an assembly temperature (Tc) substantially comprised between an ambient temperature (Tamb) and said epitaxy temperature (Tepi), such that a direct bonding energy per unit area of said metal of interest is higher than or equal to 0.5 J/m2; iv) joining, by direct bonding, at said assembly temperature (Tc), said stacks (10, 20).

2. 发明申请

US20200227894A1 METHOD FOR PRODUCING A LIGHT SOURCE AND LIGHT SOURCE 审中-公开
公开(公告)号：US20200227894A1
公开(公告)日：2020-07-16
申请号：US16690193
申请日：2019-11-21
申请人： Commissariat A L'Energie Atomique et aux Energies Alternatives
发明人： Vincent REBOUD , Georgio EL ZAMMAR , Rami KHAZAKA , Sylvie MENEZO
IPC分类号： H01S5/30 , H01S5/32 , H01S5/40 , H01S5/02
摘要： A light source comprises a GeSn active zone inserted between two contact zones. The active zone is formed directly on a silicon oxide layer by a first lateral epitaxial growth of a Ge germination layer followed by a second lateral epitaxial growth of a GeSn base layer. A cavity is formed between the contact zones by encapsulation and etching, so as to guide these lateral growths. A vertical growth of GeSn is then achieved from the base layer to form a structural layer. The active zone is formed in the stack of base and structural layers.

3. 发明申请

US20160195476A1 METHOD FOR MANUFACTURING A SUBSTRATE FOR SURFACE-ENHANCED RAMAN SPECTOGRAPHY AND SUBSTRATE 有权
标题翻译：用于制造表面增强拉曼光谱和基板的基板的方法
公开(公告)号：US20160195476A1
公开(公告)日：2016-07-07
申请号：US14988165
申请日：2016-01-05
申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
发明人： Stefan LANDIS , Vincent REBOUD
IPC分类号： G01N21/65 , C23C14/24
CPC分类号： G01N21/658 , B82Y15/00 , B82Y20/00 , C23C14/24
摘要： A substrate for surface-enhanced Raman spectography includes a support including an upper surface; a supporting structure including at least one microstructured pattern, the microstructured pattern including a top and sidewalls, with the sidewalls extending according to a direction secant to the direction of the upper surface; a multilayer arranged on the sidewalls of the microstructured pattern, with the multilayer including at least two pillar layers, separated from each other by an intermediate layer, each intermediate layer having an end set back with respect to an end of each adjacent pillar layer in such a way that the ends of two successive pillar layers form pins separated by a cavity, with the ends of the pillar layers being covered by a metal layer.
摘要翻译：用于表面增强拉曼光谱的衬底包括：包括上表面的支撑体; 包括至少一个微结构图案的支撑结构，所述微结构图案包括顶部和侧壁，所述侧壁根据与所述上表面的方向相切的方向延伸; 多层布置在微结构化图案的侧壁上，其中多层包括至少两个柱层，它们由中间层彼此分开，每个中间层的端部相对于每个相邻柱层的端部在这样的位置设置回两个连续柱层的端部形成由空腔分开的销的方式，柱层的端部被金属层覆盖。

4. 发明申请

US20160195475A1 METHOD FOR MANUFACTURING A SUBSTRATE FOR SURFACE-ENHANCED RAMAN SPECTOGRAPHY 有权
标题翻译：用于制造表面增强拉曼光谱的基板的方法
公开(公告)号：US20160195475A1
公开(公告)日：2016-07-07
申请号：US14988122
申请日：2016-01-05
申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
发明人： Stefan LANDIS , Vincent REBOUD
IPC分类号： G01N21/65 , G01N21/01
CPC分类号： G01N21/658 , B82Y15/00 , B82Y20/00 , B82Y30/00 , G01J3/44 , G01N21/01 , H01L49/006
摘要： A method for manufacturing a substrate for surface-enhanced Raman spectography, includes creating a supporting structure including microstructured pattern including a top and sidewalls; depositing a multilayer on the supporting structure with the multilayer including two metal layers and an intermediate layer arranged between the two metal layers, with the intermediate layer being carried out in a material that can be selectively etched with respect to the metal layers; etching a portion of the multilayer deposited on the top of the microstructured pattern in such a way as to expose ends each layer of the multilayer; selective etching of the ends of the intermediate layers in such a way as to form cavities between the ends of two successive metal layers.
摘要翻译：一种用于表面增强拉曼光谱的基板的制造方法，包括：形成包括顶部和侧壁的微结构图案的支撑结构; 在所述支撑结构上沉积多层，所述多层包括两个金属层和布置在所述两个金属层之间的中间层，所述中间层以可相对于所述金属层选择性蚀刻的材料进行; 以这样的方式蚀刻沉积在微结构化图案的顶部上的多层的一部分，以暴露多层的每一层的端部; 选择性地蚀刻中间层的端部，以便在两个连续的金属层的端部之间形成空腔。

5. 发明申请

US20220200239A1 LASER COMPRISING A DISTRIBUTED BRAGG MIRROR AND PRODUCTION METHOD THEREOF 有权
公开(公告)号：US20220200239A1
公开(公告)日：2022-06-23
申请号：US17644870
申请日：2021-12-17
申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
发明人： Vincent REBOUD , Maryse FOURNIER , Jean-Marc FEDELI
IPC分类号： H01S5/125 , H01S5/042 , H01S5/34 , H01S5/10
摘要： A laser includes a distributed Bragg minor and is configured to emit monochromatic light radiation along a longitudinal direction. The laser has layers, stacked along a first transverse direction normal to the longitudinal direction and made of III-V materials, including an active region configured to emit the radiation. The mirror is formed by periodic lateral corrugations which extend mainly along the longitudinal direction and having a dimension along a second transverse direction normal to the longitudinal direction. The lateral corrugations of the Bragg minor extend from a top surface of the waveguide pattern along the first transverse direction on a height strictly less than the depth, at which the active region is located starting from the top surface, such that a portion of lateral flanks of the waveguide is free of any lateral corrugations at the active region.

6. 发明申请

US20220200238A1 LASER COMPRISING A DISTRIBUTED BRAGG MIRROR AND PRODUCTION METHOD 有权
公开(公告)号：US20220200238A1
公开(公告)日：2022-06-23
申请号：US17644831
申请日：2021-12-17
申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
发明人： Vincent REBOUD , Maryse FOURNIER , Jean-Marc FEDELI
IPC分类号： H01S5/125 , H01S5/042 , H01S5/026 , H01S5/12 , H01S5/34 , H01S5/343
摘要： A laser is provided, including: a distributed Bragg mirror; a waveguide, the laser to emit light radiation along a longitudinal direction x, and the waveguide formed at least in part in a stack of layers made of III-V materials including at least one active region to emit the light radiation, the mirror including lateral corrugations distributed periodically along the direction x in a period Λ, the corrugations being carried by at least a lateral plane xz defined by the direction x and a first transverse direction z normal to the direction x, the corrugations having a dimension d along a second transverse direction y normal to the direction x; and a top electrode arranged on the waveguide along the direction z, the corrugations being partly located at lateral flanks of the top electrode, extending parallel to the plane xz, and extending only on the lateral flanks of the top electrode.

7. 发明申请

US20220181850A1 METHOD OF MAKING A DISTRIBUTED BRAGG MIRROR 有权
公开(公告)号：US20220181850A1
公开(公告)日：2022-06-09
申请号：US17457362
申请日：2021-12-02
申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
发明人： Maryse FOURNIER , Vincent REBOUD , Jean-Marc FEDELI
IPC分类号： H01S5/125
摘要： A method for forming a Bragg reflector includes after forming first trenches in the stack, which are intended to form structures of the distributed Bragg reflector, forming a sacrificial interlayer at least in the first trenches, depositing a second masking layer at least inside the first trenches, forming second trenches intended to form sidewalls of the laser, removing the second masking layer from inside the first trenches, removing said sacrificial interlayer so as to remove, by lift-off, residues of the second masking layer that remain inside the first trenches, and filling said first trenches with at least one metal material.

8. 发明申请

US20190244813A1 PROCESS FOR PRODUCING A STRAINED LAYER BASED ON GERMANIUM-TIN 审中-公开
公开(公告)号：US20190244813A1
公开(公告)日：2019-08-08
申请号：US16327520
申请日：2017-08-23
申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
发明人： Vincent REBOUD , Jean-Michel HARTMANN , Alexei TCHELNOKOV , Vincent CALVO
IPC分类号： H01L21/02
摘要： The invention pertains to a process for producing a strained layer based on germanium-tin (GeSn). The process includes a step of producing a semiconductor stack containing a layer based on GeSn and having an initial strain value that is non-zero; a step of structuring the semiconductor stack so as to form a structured portion and a peripheral portion, the structured portion including a central section linked to the peripheral portion by at least two lateral sections having an average width greater than an average width of the central section; and a step of suspending the structured portion, the central section then having a final strain value higher than the initial value.

9. 发明申请

US20190044308A1 SEMICONDUCTOR STRUCTURE INCLUDING A SUSPENDED MEMBRANE CONTAINING A CENTRAL SEGMENT OF STRUCTURED THICKNESS 审中-公开
公开(公告)号：US20190044308A1
公开(公告)日：2019-02-07
申请号：US16053093
申请日：2018-08-02
申请人： Commissariat a l'energie atomique et aux energies alternatives
发明人： Vincent REBOUD , Alban Gassenq , Samuel Tardif , Vincent Calvo , Alexei Tchelnokov
IPC分类号： H01S5/34 , H01S5/10
摘要： A semiconductor structure including a semiconductor layer made of a crystalline semiconductor compound, a portion of the semiconductor layer which forms a suspended membrane above a carrier layer, the suspended membrane being formed from a tensilely stressed central segment and a plurality of lateral segments forming tensioning arms. The central segment includes at least one zone of thinned thickness.

10. 发明申请

US20160195468A1 METHOD FOR MANUFACTURING A SUBSTRATE FOR SURFACE-ENHANCED RAMAN SPECTOGRAPHY AND SUBSTRATE 有权
标题翻译：用于制造表面增强拉曼光谱和基板的基板的方法
公开(公告)号：US20160195468A1
公开(公告)日：2016-07-07
申请号：US14988064
申请日：2016-01-05
申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
发明人： Stefan LANDIS , Vincent REBOUD
IPC分类号： G01N21/01 , G01N21/65
CPC分类号： G01N21/01 , B82Y15/00 , B82Y20/00 , B82Y30/00 , G01J3/44 , G01N21/658 , G01N2201/068
摘要： A substrate for surface-enhanced Raman spectography includes a support including an upper surface; a multilayer deposited on the upper surface, with the multilayer including at least two metal layers separated from each other by an intermediate layer, the intermediate layer being selectively etchable with respect to the metal layers, the multilayer being passed through by at least one trench delimited by ends of each one of the layers of the multilayer, each end of each intermediate layer being set back with respect to the end of each metal layer adjacent to the intermediate layer in such a way that the ends of two successive metal layers form metal pins separated by a cavity; a reflective optical system arranged in each trench, with the reflective optical system being arranged to direct inside the cavities an incident light arriving according to an angle with respect to the upper surface of the support.
摘要翻译：用于表面增强拉曼光谱的衬底包括：包括上表面的支撑体; 多层沉积在所述上表面上，所述多层包括通过中间层彼此分离的至少两个金属层，所述中间层相对于所述金属层可选择性地蚀刻，所述多层通过限定了至少一个沟槽通过多层的每个层的端部，每个中间层的每个端部相对于与中间层相邻的每个金属层的端部被设置成使得两个连续的金属层的端部形成金属销由腔分开; 布置在每个沟槽中的反射光学系统，其中所述反射光学系统布置成在所述空腔内引导根据与所述支撑件的上表面成一定角度到达的入射光。

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