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    • 2. 发明申请
    • METHOD FOR MANUFACTURING A WAVEGUIDE INCLUDING A SEMI-CONDUCTING JUNCTION
    • 用于制造包括半导体结的波导的方法
    • US20160154180A1
    • 2016-06-02
    • US14953773
    • 2015-11-30
    • Commissariat A L'Energie Atomique et aux Energies Alternatives
    • Maryse FOURNIERDaivid FowlerEdouard GrellierLorenzo Iotti
    • G02B6/134G02F1/025G02F1/225G02B6/136
    • G02B6/1347G02B6/00G02B6/134G02B6/1342G02B6/136G02F1/025G02F1/2257G02F2001/212H01L2223/6627H01L2223/6633
    • The invention relates to a method for manufacturing a waveguide (40) including a semiconducting junction (23). The method comprises the following steps: providing a support (10) comprising a semiconducting layer (20) having a first part (21) of a first conductivity type ; protecting the first part ; selectively implanting a second conductivity-type dopants in a second part (22) of the semiconducting layer (20) adjacent to the first part (21, 221). The concentration of second conductivity-type dopants in the second part (22, 222) is greater than the one of first conductivity-type dopants in the first part (21, 221). The method further comprises the steps of: diffusing second conductivity-type dopants in the first part (21, 221) to form a semiconducting junction (23, 223) in the first part (21, 221), and partially etching the semiconducting layer (20, 200) to form the waveguide (40, 240) in the first part (21, 221), the protection of the first part (21, 221) being used so that the semiconducting junction (23, 223) is included in the waveguide (40, 240).
    • 本发明涉及一种制造包括半导体结(23)的波导(40)的方法。 该方法包括以下步骤:提供包括具有第一导电类型的第一部分(21)的半导体层(20)的支撑件(10) 保护第一部分; 在所述半导体层(20)的与所述第一部分(21,221)相邻的第二部分(22)中选择性地注入第二导电型掺杂剂。 第二部分(22,222)中的第二导电型掺杂剂的浓度大于第一部分(21,221)中的第一导电类型掺杂剂的浓度。 该方法还包括以下步骤:在第一部分(21,221)中扩散第二导电型掺杂剂以在第一部分(21,221)中形成半导体结(23,223),并部分地蚀刻半导体层 20,200),以在第一部分(21,221)中形成波导(40,240),使用第一部分(21,221)的保护,使得半导体结(23,223)被包括在 波导(40,240)。