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1. 发明申请

US20050023694A1 Integrated low k dielectrics and etch stops 有权
标题翻译：集成的低k电介质和蚀刻停止
公开(公告)号：US20050023694A1
公开(公告)日：2005-02-03
申请号：US10924551
申请日：2004-08-24
申请人： Claes Bjorkman , Melissa Yu , Hongqing Shan , David Cheung , Wai-Fan Yau , Kuowei Liu , Nasreen Chapra , Gerald Yin , Farhad Moghadam , Judy Huang , Dennis Yost , Betty Tang , Yunsang Kim
发明人： Claes Bjorkman , Melissa Yu , Hongqing Shan , David Cheung , Wai-Fan Yau , Kuowei Liu , Nasreen Chapra , Gerald Yin , Farhad Moghadam , Judy Huang , Dennis Yost , Betty Tang , Yunsang Kim
IPC分类号： H01L21/302 , A01C15/02 , A01C17/00 , C23C16/40 , H01L21/3065 , H01L21/31 , H01L21/311 , H01L21/312 , H01L21/316 , H01L21/768 , H01L23/522 , H01L23/48
CPC分类号： H01L21/76835 , C23C16/401 , H01L21/02126 , H01L21/022 , H01L21/02208 , H01L21/02274 , H01L21/02304 , H01L21/31116 , H01L21/31138 , H01L21/3121 , H01L21/31612 , H01L21/31633 , H01L21/76801 , H01L21/76802 , H01L21/76807 , H01L21/76829
摘要： A method of depositing and etching dielectric layers having low dielectric constants and etch rates that vary by at least 3:1 for formation of horizontal interconnects. The amount of carbon or hydrogen in the dielectric layer is varied by changes in deposition conditions to provide low k dielectric layers that can replace etch stop layers or conventional dielectric layers in damascene applications. A dual damascene structure having two or more dielectric layers with dielectric constants lower than about 4 can be deposited in a single reactor and then etched to form vertical and horizontal interconnects by varying the concentration of a carbon:oxygen gas such as carbon monoxide. The etch gases for forming vertical interconnects preferably comprises CO and a fluorocarbon, and CO is preferably excluded from etch gases for forming horizontal interconnects.
摘要翻译：沉积和蚀刻具有低介电常数和蚀刻速率的介电层的方法，该介电层变化至少3:1以形成水平互连。电介质层中的碳或氢的量可以通过沉积条件的变化来改变，以提供低k电介质层，其可代替蚀刻停止层或在镶嵌应用中的常规电介质层。具有介电常数低于约4的两个或多个电介质层的双镶嵌结构可以沉积在单个反应器中，然后通过改变碳：氧气如一氧化碳的浓度进行蚀刻以形成垂直和水平互连。用于形成垂直互连的蚀刻气体优选地包括CO和碳氟化合物，并且CO优选从用于形成水平互连的蚀刻气体中排除。

2. 发明授权

US06858153B2 Integrated low K dielectrics and etch stops 有权
标题翻译：集成的低K电介质和蚀刻停止
公开(公告)号：US06858153B2
公开(公告)日：2005-02-22
申请号：US10011368
申请日：2001-11-05
申请人： Claes H. Bjorkman , Min Melissa Yu , Hongquing Shan , David W. Cheung , Wai-Fan Yau , Kuowei Liu , Nasreen Gazala Chapra , Gerald Yin , Farhad K. Moghadam , Judy H. Huang , Dennis Yost , Betty Tang , Yunsang Kim
发明人： Claes H. Bjorkman , Min Melissa Yu , Hongquing Shan , David W. Cheung , Wai-Fan Yau , Kuowei Liu , Nasreen Gazala Chapra , Gerald Yin , Farhad K. Moghadam , Judy H. Huang , Dennis Yost , Betty Tang , Yunsang Kim
IPC分类号： H01L21/302 , A01C15/02 , A01C17/00 , C23C16/40 , H01L21/3065 , H01L21/31 , H01L21/311 , H01L21/312 , H01L21/316 , H01L21/768 , H01L23/522 , C23F1/00
CPC分类号： H01L21/76835 , C23C16/401 , H01L21/02126 , H01L21/022 , H01L21/02208 , H01L21/02274 , H01L21/02304 , H01L21/31116 , H01L21/31138 , H01L21/3121 , H01L21/31612 , H01L21/31633 , H01L21/76801 , H01L21/76802 , H01L21/76807 , H01L21/76829
摘要： A method of depositing and etching dielectric layers having low dielectric constants and etch rates that vary by at least 3:1 for formation of horizontal interconnects. The amount of carbon or hydrogen in the dielectric layer is varied by changes in deposition conditions to provide low k dielectric layers that can replace etch stop layers or conventional dielectric layers in damascene applications. A dual damascene structure having two or more dielectric layers with dielectric constants lower than about 4 can be deposited in a single reactor and then etched to form vertical and horizontal interconnects by varying the concentration of a carbon:oxygen gas such as carbon monoxide. The etch gases for forming vertical interconnects preferably comprises CO and a fluorocarbon, and CO is preferably excluded from etch gases for forming horizontal interconnects.
摘要翻译：沉积和蚀刻具有低介电常数和蚀刻速率的介电层的方法，该介电层变化至少3:1以形成水平互连。电介质层中的碳或氢的量可以通过沉积条件的变化来改变，以提供低k电介质层，其可代替蚀刻停止层或在镶嵌应用中的常规电介质层。具有介电常数低于约4的两个或多个电介质层的双镶嵌结构可以沉积在单个反应器中，然后通过改变碳：氧气如一氧化碳的浓度进行蚀刻以形成垂直和水平互连。用于形成垂直互连的蚀刻气体优选地包括CO和碳氟化合物，并且CO优选从用于形成水平互连的蚀刻气体中排除。

3. 发明授权

US06340435B1 Integrated low K dielectrics and etch stops 失效
标题翻译：集成的低K电介质和蚀刻停止
公开(公告)号：US06340435B1
公开(公告)日：2002-01-22
申请号：US09329012
申请日：1999-06-09
申请人： Claes H. Bjorkman , Min Melissa Yu , Hongquing Shan , David W. Cheung , Wai-Fan Yau , Kuowei Liu , Nasreen Gazala Chapra , Gerald Yin , Farhad K. Moghadam , Judy H. Huang , Dennis Yost , Betty Tang , Yunsang Kim
发明人： Claes H. Bjorkman , Min Melissa Yu , Hongquing Shan , David W. Cheung , Wai-Fan Yau , Kuowei Liu , Nasreen Gazala Chapra , Gerald Yin , Farhad K. Moghadam , Judy H. Huang , Dennis Yost , Betty Tang , Yunsang Kim
IPC分类号： C23F100
CPC分类号： H01L21/76835 , C23C16/401 , H01L21/02126 , H01L21/022 , H01L21/02208 , H01L21/02274 , H01L21/02304 , H01L21/31116 , H01L21/31138 , H01L21/3121 , H01L21/31612 , H01L21/31633 , H01L21/76801 , H01L21/76802 , H01L21/76807 , H01L21/76829
摘要： A method of depositing and etching dielectric layers having low dielectric constants and etch rates that vary by at least 3:1 for formation of horizontal interconnects. The amount of carbon or hydrogen in the dielectric layer is varied by changes in deposition conditions to provide low k dielectric layers that can replace etch stop layers or conventional dielectric layers in damascene applications. A dual damascene structure having two or more dielectric layers with dielectric constants lower than about 4 can be deposited in a single reactor and then etched to form vertical and horizontal interconnects by varying the concentration of a carbon:oxygen gas such as carbon monoxide. The etch gases for forming vertical interconnects preferably comprises CO and a fluorocarbon, and CO is preferably excluded from etch gases for forming horizontal interconnects.
摘要翻译：沉积和蚀刻具有低介电常数和蚀刻速率的介电层的方法，该介电层变化至少3:1以形成水平互连。电介质层中的碳或氢的量可以通过沉积条件的变化来改变，以提供低k电介质层，其可代替蚀刻停止层或在镶嵌应用中的常规电介质层。具有介电常数低于约4的两个或多个电介质层的双镶嵌结构可以沉积在单个反应器中，然后通过改变碳：氧气如一氧化碳的浓度进行蚀刻以形成垂直和水平互连。用于形成垂直互连的蚀刻气体优选地包括CO和碳氟化合物，并且CO优选从用于形成水平互连的蚀刻气体中排除。

4. 发明授权

US06669858B2 Integrated low k dielectrics and etch stops 有权
公开(公告)号：US06669858B2
公开(公告)日：2003-12-30
申请号：US10011369
申请日：2001-11-05
申请人： Claes H. Bjorkman , Min Melissa Yu , Hongquing Shan , David W. Cheung , Wai-Fan Yau , Kuowei Liu , Nasreen Gazala Chapra , Gerald Yin , Farhad K. Moghadam , Judy H. Huang , Dennis Yost , Betty Tang , Yunsang Kim
发明人： Claes H. Bjorkman , Min Melissa Yu , Hongquing Shan , David W. Cheung , Wai-Fan Yau , Kuowei Liu , Nasreen Gazala Chapra , Gerald Yin , Farhad K. Moghadam , Judy H. Huang , Dennis Yost , Betty Tang , Yunsang Kim
IPC分类号： B44C122
CPC分类号： H01L21/76835 , C23C16/401 , H01L21/02126 , H01L21/022 , H01L21/02208 , H01L21/02274 , H01L21/02304 , H01L21/31116 , H01L21/31138 , H01L21/3121 , H01L21/31612 , H01L21/31633 , H01L21/76801 , H01L21/76802 , H01L21/76807 , H01L21/76829
摘要： A method of depositing and etching dielectric layers having low dielectric constants and etch rates that vary by at least 3:1 for formation of horizontal interconnects. The amount of carbon or hydrogen in the dielectric layer is varied by changes in deposition conditions to provide low k dielectric layers that can replace etch stop layers or conventional dielectric layers in damascene applications. A dual damascene structure having two or more dielectric layers with dielectric constants lower than about 4 can be deposited in a single reactor and then etched to form vertical and horizontal interconnects by varying the concentration of a carbon:oxygen gas such as carbon monoxide. The etch gases for forming vertical interconnects preferably comprises CO and a fluorocarbon, and CO is preferably excluded from etch gases for forming horizontal interconnects.

5. 发明授权

US07227244B2 Integrated low k dielectrics and etch stops 有权
标题翻译：集成的低k电介质和蚀刻停止
公开(公告)号：US07227244B2
公开(公告)日：2007-06-05
申请号：US10924551
申请日：2004-08-24
申请人： Claes H. Bjorkman , Melissa Min Yu , Hongquing Shan , David W. Cheung , Wai-Fan Yau , Kuowei Liu , Nasreen Gazala Chapra , Gerald Yin , Farhad K. Moghadam , Judy H. Huang , Dennis Yost , Betty Tang , Yunsang Kim
发明人： Claes H. Bjorkman , Melissa Min Yu , Hongquing Shan , David W. Cheung , Wai-Fan Yau , Kuowei Liu , Nasreen Gazala Chapra , Gerald Yin , Farhad K. Moghadam , Judy H. Huang , Dennis Yost , Betty Tang , Yunsang Kim
IPC分类号： H01L23/58
CPC分类号： H01L21/76835 , C23C16/401 , H01L21/02126 , H01L21/022 , H01L21/02208 , H01L21/02274 , H01L21/02304 , H01L21/31116 , H01L21/31138 , H01L21/3121 , H01L21/31612 , H01L21/31633 , H01L21/76801 , H01L21/76802 , H01L21/76807 , H01L21/76829
摘要： A method of depositing and etching dielectric layers having low dielectric constants and etch rates that vary by at least 3:1 for formation of horizontal interconnects. The amount of carbon or hydrogen in the dielectric layer is varied by changes in deposition conditions to provide low k dielectric layers that can replace etch stop layers or conventional dielectric layers in damascene applications. A dual damascene structure having two or more dielectric layers with dielectric constants lower than about 4 can be deposited in a single reactor and then etched to form vertical and horizontal interconnects by varying the concentration of a carbon:oxygen gas such as carbon monoxide. The etch gases for forming vertical interconnects preferably comprises CO and a fluorocarbon, and CO is preferably excluded from etch gases for forming horizontal interconnects.
摘要翻译：沉积和蚀刻具有低介电常数和蚀刻速率的介电层的方法，该介电层变化至少3:1以形成水平互连。电介质层中的碳或氢的量可以通过沉积条件的变化来改变，以提供低k电介质层，其可代替蚀刻停止层或在镶嵌应用中的常规电介质层。具有介电常数低于约4的两个或多个电介质层的双镶嵌结构可以沉积在单个反应器中，然后通过改变碳：氧气如一氧化碳的浓度进行蚀刻以形成垂直和水平互连。用于形成垂直互连的蚀刻气体优选地包括CO和碳氟化合物，并且CO优选从用于形成水平互连的蚀刻气体中排除。

6. 发明授权

US06403491B1 Etch method using a dielectric etch chamber with expanded process window 失效
标题翻译：使用具有扩展工艺窗口的电介质蚀刻室的蚀刻方法
公开(公告)号：US06403491B1
公开(公告)日：2002-06-11
申请号：US09704867
申请日：2000-11-01
申请人： Jingbao Liu , Judy Wang , Takehiko Komatsu , Bryan Y Pu , Kenny L Doan , Claes Bjorkman , Melody Chang , Yunsang Kim , Hongching Shan , Ruiping Wang
发明人： Jingbao Liu , Judy Wang , Takehiko Komatsu , Bryan Y Pu , Kenny L Doan , Claes Bjorkman , Melody Chang , Yunsang Kim , Hongching Shan , Ruiping Wang
IPC分类号： H01L213065
CPC分类号： H01L21/6875 , H01J37/32522 , H01L21/31116 , H01L21/67069 , H01L21/6833 , H01L21/68757 , H01L21/68785 , H01L21/68792 , H01L21/76802 , H01L21/76807 , H01L21/76897 , H01L2924/3011
摘要： A method for etching a dielectric in a thermally controlled plasma etch chamber with an expanded processing window. The method is adapted to incorporate benefits of a the thermal control and high evacuation capability of the chamber. Etchent gases include hydrocarbons, oxygen and inert gas. Explanation is provided for enablling the use of hexafluoro-1,3-butadiene in a capacitively coupled etch plasma. The method is very useful for creating via, self aligned contacts, dual damascene, and other dielectric etch.
摘要翻译：一种用于在具有扩展的处理窗口的热控等离子体蚀刻室中蚀刻电介质的方法。该方法适于结合腔室的热控制和高排气能力的优点。 Etchent气体包括碳氢化合物，氧气和惰性气体。提供了解释在电容耦合蚀刻等离子体中使用六氟-1,3-丁二烯的方法。该方法对于创建通孔，自对准触点，双镶嵌和其他电介质蚀刻非常有用。

7. 发明授权

US06326307B1 Plasma pretreatment of photoresist in an oxide etch process 失效
标题翻译：氧化物蚀刻工艺中光致抗蚀剂的等离子体预处理
公开(公告)号：US06326307B1
公开(公告)日：2001-12-04
申请号：US09440792
申请日：1999-11-15
申请人： Roger A. Lindley , Henry Fong , Yunsang Kim , Takehito Komatsu , Ajey M. Joshi , Bryan Y. Pu , Hongqing Shan
发明人： Roger A. Lindley , Henry Fong , Yunsang Kim , Takehito Komatsu , Ajey M. Joshi , Bryan Y. Pu , Hongqing Shan
IPC分类号： H01L21302
CPC分类号： H01L21/76802 , H01L21/31116
摘要： A photoresist plasma pretreatment performed prior to a plasma oxide etch. The plasma pretreatment is performed with an argon plasma or a carbon tetrafluoride and trifluoromethane plasma with lower power than in the main etch or is performed with a plasma of difluoromethane or trifluoromethane and carbon monoxide but no argon diluent gas. Thereby, striations on the oxide wall are reduced.
摘要翻译：在等离子体氧化物蚀刻之前执行的光刻胶等离子体预处理。等离子体预处理用氩等离子体或四氟化碳和三氟甲烷等离子体进行，功率低于主蚀刻，或者用二氟甲烷或三氟甲烷和一氧化碳的等离子体进行，而不是氩气稀释气体。因此，氧化物壁上的条纹减小。

8. 发明授权

US07316761B2 Apparatus for uniformly etching a dielectric layer 失效
标题翻译：用于均匀蚀刻电介质层的装置
公开(公告)号：US07316761B2
公开(公告)日：2008-01-08
申请号：US10357652
申请日：2003-02-03
申请人： Kenny L. Doan , Yunsang Kim , Mahmoud Dahimene , Jingbao Liu , Bryan Pu , Hongqing Shan , Don Curry
发明人： Kenny L. Doan , Yunsang Kim , Mahmoud Dahimene , Jingbao Liu , Bryan Pu , Hongqing Shan , Don Curry
IPC分类号： H01L21/306 , H01L21/3065 , C23C16/00 , C23C16/455 , C23C16/50 , C23C16/503
CPC分类号： H01J37/32009 , H01J37/3244 , H01J37/32541 , H01J37/3266
摘要： Apparatus for plasma etching a layer of material upon a substrate comprising an anode having a first region protruding from a second region, wherein the second region defines a plane and the first region extends from said plane. In one embodiment, at least one solenoid is disposed near the apparatus to magnetize the plasma.
摘要翻译：一种用于等离子体蚀刻材料层的装置，包括具有从第二区域突出的第一区域的阳极，其中所述第二区域限定平面，并且所述第一区域从所述平面延伸。在一个实施例中，至少一个螺线管设置在设备附近以磁化等离子体。

9. 发明授权

US06686293B2 Method of etching a trench in a silicon-containing dielectric material 失效
标题翻译：在含硅介电材料中蚀刻沟槽的方法
公开(公告)号：US06686293B2
公开(公告)日：2004-02-03
申请号：US10144570
申请日：2002-05-10
申请人： Yunsang Kim , Kenny L. Doan , Claes H. Björkman , Hongqing Shan
发明人： Yunsang Kim , Kenny L. Doan , Claes H. Björkman , Hongqing Shan
IPC分类号： H01L21302
CPC分类号： H01L21/02063 , H01L21/31116 , H01L21/31138 , H01L21/31144 , H01L21/76804 , H01L21/76808 , H01L2221/1063
摘要： Disclosed herein is a method of etching a trench in a silicon-containing dielectric material, in the absence of a trench etch-stop layer, where the silicon-containing dielectric material has a dielectric constant of about 4 or less. The method comprises exposing the dielectric material to a plasma generated from a source gas comprising a fluorine-containing etchant gas and an additive gas selected from the group consisting of carbon monoxide (CO), argon, and combinations thereof. A volumetric flow ratio of the additive gas to the fluorine-containing etchant gas is within the range of about 1.25:1 to about 20:1 (more typically, about 2.5:1 to about 20:1), depending on the particular fluorine-containing etchant gas used. The method provides good control over critical dimensions and etch profile during trench etching. Also disclosed herein is a method of forming a dual damascene structure, without the need for an intermediate etch stop layer.
摘要翻译：本文公开了一种在不存在沟槽蚀刻停止层的情况下，在含硅介电材料中蚀刻沟槽的方法，其中含硅介电材料具有约4或更小的介电常数。该方法包括将电介质材料暴露于由包含含氟蚀刻剂气体和选自一氧化碳（CO），氩气及其组合的添加剂气体的源气体产生的等离子体。添加气体与含氟蚀刻剂气体的体积流量比在约1.25:1至约20:1（更典型地为约2.5:1至约20:1）的范围内，这取决于具体的氟 - 含有腐蚀剂气体。该方法在沟槽蚀刻期间提供了对临界尺寸和蚀刻轮廓的良好控制。本文还公开了形成双镶嵌结构的方法，而不需要中间蚀刻停止层。

10. 发明授权

US08430970B2 Methods for preventing corrosion of plasma-exposed yttria-coated constituents 有权
标题翻译：防止等离子体暴露的氧化钇涂层成分腐蚀的方法
公开(公告)号：US08430970B2
公开(公告)日：2013-04-30
申请号：US12852673
申请日：2010-08-09
申请人： Ganapathy Swami , Peter Loewenhardt , Yunsang Kim
发明人： Ganapathy Swami , Peter Loewenhardt , Yunsang Kim
IPC分类号： B08B7/00 , B08B3/00 , B08B7/04
CPC分类号： C23C16/4404
摘要： In accordance with one embodiment of the present disclosure, a method for preventing corrosion of a plasma-exposed yttria-coated constituent from ambient acidic hydrolysis wherein the plasma-exposed yttria-coated constituent includes a hydrolysable acid precursor is disclosed. The method may include: removing the plasma-exposed yttria-coated constituent from a semiconductor processing assembly; binding the plasma-exposed yttria-coated constituent with flexible moisture wicking material; hydrolyzing the hydrolysable acid precursor with an overwhelming aqueous admixture to form a vitiated acidic compound, wherein the flexible moisture wicking material pulls the vitiated acidic compound away from the plasma-exposed yttria-coated constituent with capillary action; dehydrating the plasma-exposed yttria-coated constituent with additional flexible moisture wicking material to pull a latent amount of the vitiated acidic compound away from the plasma-exposed yttria-coated constituent; and isolating the plasma-exposed yttria-coated constituent from ambient moisture in a moisture obstructing enclosure.
摘要翻译：根据本公开的一个实施方案，公开了一种防止等离子体暴露的氧化钇涂覆的组分由环境酸性水解引起的腐蚀的方法，其中等离子体暴露的氧化钇涂层的组分包括可水解的酸前体。该方法可以包括：从半导体处理组件中去除等离子体暴露的氧化钇涂层的组分; 用柔性吸湿芯材材料结合等离子体暴露的氧化钇涂层组分; 用压倒性的水性混合物水解可水解的酸前体以形成残留的酸性化合物，其中柔性湿润吸湿材料通过毛细管作用将残留的酸性化合物从等离子体暴露的氧化钇涂覆的组分拉出; 用额外的柔性吸湿芯材材料使等离子体暴露的氧化钇涂层组分脱水，以将潜在量的残留酸性化合物远离等离子体暴露的氧化钇涂层组分; 并将隔离曝光的氧化钇涂层的组分与湿气阻塞的外壳中的环境湿度隔离开来。

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