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1. 发明申请

US20080268650A1 TRIPLE POLY-SI REPLACEMENT SCHEME FOR MEMORY DEVICES 有权
标题翻译：用于存储器件的三重多重替换方案
公开(公告)号：US20080268650A1
公开(公告)日：2008-10-30
申请号：US11742003
申请日：2007-04-30
申请人： Chungho Lee , Huaqiang Wu , Wai Lo , Hiroyuki Kinoshita
发明人： Chungho Lee , Huaqiang Wu , Wai Lo , Hiroyuki Kinoshita
IPC分类号： H01L21/302
CPC分类号： H01L27/11573 , H01L21/28282
摘要： A method of replacing a top oxide around a storage element of a memory device is provided. The method can involve removing a core first poly and core first top oxide in a core region while not removing a periphery first poly in a periphery region on a semiconductor substrate; forming a second top oxide around a storage element in the core region and on the periphery first poly in the periphery region; forming a second poly over the semiconductor substrate in both the core and periphery regions; removing the second poly and second top oxide in the periphery region; and forming a third poly on the semiconductor substrate in both the core and periphery regions.
摘要翻译：提供了替换存储器件的存储元件周围的顶部氧化物的方法。该方法可以包括在核心区域中去除核心的第一多核和第一顶部氧化物，而不去除半导体衬底上的外围区域中的周边第一多晶硅; 在所述芯区域中的存储元件周围和所述周边区域的所述外围第一聚四氟乙烯上形成第二顶部氧化物; 在所述芯和外围区域中在所述半导体衬底上形成第二聚合物; 去除所述周边区域中的所述第二聚合物和第二顶部氧化物; 以及在所述芯和外围区域中在所述半导体衬底上形成第三聚合物。

2. 发明授权

US07807580B2 Triple poly-si replacement scheme for memory devices 有权
标题翻译：存储器件的三重多晶硅替代方案
公开(公告)号：US07807580B2
公开(公告)日：2010-10-05
申请号：US11742003
申请日：2007-04-30
申请人： Chungho Lee , Huaqiang Wu , Wai Lo , Hiroyuki Kinoshita
发明人： Chungho Lee , Huaqiang Wu , Wai Lo , Hiroyuki Kinoshita
IPC分类号： H01L21/302
CPC分类号： H01L27/11573 , H01L21/28282
摘要： A method of replacing a top oxide around a storage element of a memory device is provided. The method can involve removing a core first poly and core first top oxide in a core region while not removing a periphery first poly in a periphery region on a semiconductor substrate; forming a second top oxide around a storage element in the core region and on the periphery first poly in the periphery region; forming a second poly over the semiconductor substrate in both the core and periphery regions; removing the second poly and second top oxide in the periphery region; and forming a third poly on the semiconductor substrate in both the core and periphery regions.
摘要翻译：提供了替换存储器件的存储元件周围的顶部氧化物的方法。该方法可以包括在核心区域中去除核心的第一多核和第一顶部氧化物，而不去除半导体衬底上的外围区域中的周边第一多晶硅; 在所述芯区域中的存储元件周围和所述周边区域的所述外围第一聚四氟乙烯上形成第二顶部氧化物; 在所述芯和外围区域中在所述半导体衬底上形成第二聚合物; 去除所述周边区域中的所述第二聚合物和第二顶部氧化物; 以及在所述芯和外围区域中在所述半导体衬底上形成第三聚合物。

3. 发明授权

US07829936B2 Split charge storage node inner spacer process 有权
标题翻译：分离电荷存储节点内隔离过程
公开(公告)号：US07829936B2
公开(公告)日：2010-11-09
申请号：US11873822
申请日：2007-10-17
申请人： Minghao Shen , Shenqing Fang , Wai Lo , Christie R. K. Marrian , Chungho Lee , Ning Cheng , Fred Cheung , Huaqiang Wu
发明人： Minghao Shen , Shenqing Fang , Wai Lo , Christie R. K. Marrian , Chungho Lee , Ning Cheng , Fred Cheung , Huaqiang Wu
IPC分类号： H01L21/331
CPC分类号： H01L29/7923 , H01L21/28282 , H01L27/115 , H01L27/11568 , H01L29/42344
摘要： Methods of forming a memory cell containing two split sub-lithographic charge storage nodes on a semiconductor substrate are provided. The methods can involve forming two split sub-lithographic charge storage nodes by using spacer formation techniques. By removing exposed portions of a first poly layer while leaving portions of the first poly layer protected by the spacers, the method can provide two split sub-lithographic first poly gates. Further, by removing exposed portions of a charge storage layer while leaving portions of the charge storage layer protected by the two split sub-lithographic first poly gates, the method can provide two split, narrow portions of the charge storage layer, which subsequently form two split sub-lithographic charge storage nodes.
摘要翻译：提供了在半导体衬底上形成包含两个分开的次光刻电荷存储节点的存储单元的方法。这些方法可以包括通过使用间隔物形成技术形成两个分裂的亚光刻电荷存储节点。通过去除第一多晶硅层的暴露部分，同时留下被间隔物保护的第一多晶硅层的部分，该方法可以提供两个分裂的次光刻的第一多晶硅栅极。此外，通过去除电荷存储层的暴露部分，同时保留由两个分割子光刻第一多晶硅栅极保护的电荷存储层的部分，该方法可以提供电荷存储层的两个分开的窄部分，其随后形成两个拆分次光刻电荷存储节点。

4. 发明申请

US20090101963A1 SPLIT CHARGE STORAGE NODE INNER SPACER PROCESS 有权
标题翻译：分离式充电储存装置内部空间过程
公开(公告)号：US20090101963A1
公开(公告)日：2009-04-23
申请号：US11873822
申请日：2007-10-17
申请人： Minghao Shen , Shenqing Fang , Wai Lo , Christie R.K. Marrian , Chungho Lee , Ning Cheng , Fred Cheung , Huaqiang Wu
发明人： Minghao Shen , Shenqing Fang , Wai Lo , Christie R.K. Marrian , Chungho Lee , Ning Cheng , Fred Cheung , Huaqiang Wu
IPC分类号： H01L29/792 , H01L21/336
CPC分类号： H01L29/7923 , H01L21/28282 , H01L27/115 , H01L27/11568 , H01L29/42344
摘要： Methods of forming a memory cell containing two split sub-lithographic charge storage nodes on a semiconductor substrate are provided. The methods can involve forming two split sub-lithographic charge storage nodes by using spacer formation techniques. By removing exposed portions of a first poly layer while leaving portions of the first poly layer protected by the spacers, the method can provide two split sub-lithographic first poly gates. Further, by removing exposed portions of a charge storage layer while leaving portions of the charge storage layer protected by the two split sub-lithographic first poly gates, the method can provide two split, narrow portions of the charge storage layer, which subsequently form two split sub-lithographic charge storage nodes.
摘要翻译：提供了在半导体衬底上形成包含两个分开的次光刻电荷存储节点的存储单元的方法。这些方法可以包括通过使用间隔物形成技术形成两个分裂的亚光刻电荷存储节点。通过去除第一多晶硅层的暴露部分，同时留下被间隔物保护的第一多晶硅层的部分，该方法可以提供两个分裂的次光刻的第一多晶硅栅极。此外，通过去除电荷存储层的暴露部分，同时保留由两个分割子光刻第一多晶硅栅极保护的电荷存储层的部分，该方法可以提供电荷存储层的两个分开的窄部分，其随后形成两个拆分次光刻电荷存储节点。

5. 发明申请

US20110237060A1 SACRIFICIAL NITRIDE AND GATE REPLACEMENT 有权
标题翻译：硝酸盐和盖茨更换
公开(公告)号：US20110237060A1
公开(公告)日：2011-09-29
申请号：US13153558
申请日：2011-06-06
申请人： Chungho Lee , Kuo-Tung Chang , Hiroyuki Kinoshita , Huaqiang Wu , Fred Cheung
发明人： Chungho Lee , Kuo-Tung Chang , Hiroyuki Kinoshita , Huaqiang Wu , Fred Cheung
IPC分类号： H01L21/28
CPC分类号： H01L21/28282 , H01L21/3185 , H01L27/115 , H01L27/11568 , H01L29/42348 , H01L29/7923
摘要： Methods of forming a top oxide around a charge storage material layer of a memory cell and methods of improving quality of a top oxide around a charge storage material layer of a memory cell are provided. The method can involve providing a charge storage layer on a semiconductor substrate, a nitride layer on the charge storage layer, and a first poly layer on the nitride layer, and converting at least a portion of the nitride layer to a top oxide. By converting at least a portion of a nitride layer to a top oxide layer, the quality of the resultant top oxide layer can be improved.
摘要翻译：提供了在存储单元的电荷存储材料层周围形成顶部氧化物的方法以及提高存储单元的电荷存储材料层周围的顶部氧化物的质量的方法。该方法可以包括在半导体衬底上提供电荷存储层，电荷存储层上的氮化物层和氮化物层上的第一多晶硅层，并将氮化物层的至少一部分转化为顶部氧化物。通过将氮化物层的至少一部分转化为顶部氧化物层，可以提高所得顶部氧化物层的质量。

6. 发明申请

US20090061650A1 SACRIFICIAL NITRIDE AND GATE REPLACEMENT 有权
标题翻译：硝酸盐和盖茨更换
公开(公告)号：US20090061650A1
公开(公告)日：2009-03-05
申请号：US11847507
申请日：2007-08-30
申请人： Chungho Lee , Kuo-Tung Chang , Hiroyuki Kinoshita , Huaqiang Wu , Fred Cheung
发明人： Chungho Lee , Kuo-Tung Chang , Hiroyuki Kinoshita , Huaqiang Wu , Fred Cheung
IPC分类号： H01L21/31
CPC分类号： H01L21/28282 , H01L21/3185 , H01L27/115 , H01L27/11568 , H01L29/42348 , H01L29/7923
摘要： Methods of forming a top oxide around a charge storage material layer of a memory cell and methods of improving quality of a top oxide around a charge storage material layer of a memory cell are provided. The method can involve providing a charge storage layer on a semiconductor substrate, a nitride layer on the charge storage layer, and a first poly layer on the nitride layer, and converting at least a portion of the nitride layer to a top oxide. By converting at least a portion of a nitride layer to a top oxide layer, the quality of the resultant top oxide layer can be improved.
摘要翻译：提供了在存储单元的电荷存储材料层周围形成顶部氧化物的方法以及提高存储单元的电荷存储材料层周围的顶部氧化物的质量的方法。该方法可以包括在半导体衬底上提供电荷存储层，电荷存储层上的氮化物层和氮化物层上的第一多晶硅层，并将氮化物层的至少一部分转化为顶部氧化物。通过将氮化物层的至少一部分转化为顶部氧化物层，可以提高所得顶部氧化物层的质量。

7. 发明申请

US20090108330A1 SPLIT CHARGE STORAGE NODE OUTER SPACER PROCESS 有权
标题翻译：分离式充电储存节点外部间隔过程
公开(公告)号：US20090108330A1
公开(公告)日：2009-04-30
申请号：US11924169
申请日：2007-10-25
申请人： Minghao Shen , Chungho Lee , Hiroyuki Kinoshita , Huaqiang Wu
发明人： Minghao Shen , Chungho Lee , Hiroyuki Kinoshita , Huaqiang Wu
IPC分类号： H01L29/792 , H01L21/3205
CPC分类号： H01L29/7923 , H01L21/0337 , H01L21/0338 , H01L21/32139 , H01L27/115 , H01L27/11568
摘要： Memory cells containing two split sub-lithographic charge storage nodes on a semiconductor substrate and methods for making the memory cells are provided. The methods can involve forming two split sub-lithographic charge storage nodes by using spacer formation techniques. By removing an exposed portion of a fist poly layer between sloping side surfaces or outer surfaces of spacers while leaving portions of the first poly layer protected by the spacers, the method can provide two split sub-lithographic first poly gates. Further, by removing an exposed portion of a charge storage layer between sloping side surfaces or outer surfaces of spacers, the method can provide two split, narrow portions of the charge storage layer, which subsequently form two split sub-lithographic charge storage nodes.
摘要翻译：提供了包含半导体衬底上的两个分裂子光刻电荷存储节点的存储单元以及用于制造存储单元的方法。这些方法可以包括通过使用间隔物形成技术形成两个分裂的亚光刻电荷存储节点。通过在间隔物的倾斜侧表面或外表面之间除去第一多晶硅层的暴露部分，同时留下被间隔物保护的第一多晶硅层的部分，该方法可以提供两个分裂的次光刻的第一多晶硅栅极。此外，通过去除间隔物的倾斜侧表面或外表面之间的电荷存储层的暴露部分，该方法可以提供电荷存储层的两个分开的窄部分，其随后形成两个分裂的亚光刻电荷存储节点。

8. 发明申请

US20090061631A1 GATE REPLACEMENT WITH TOP OXIDE REGROWTH FOR THE TOP OXIDE IMPROVEMENT 有权
标题翻译：顶部氧化物改进的顶部氧化物替换
公开(公告)号：US20090061631A1
公开(公告)日：2009-03-05
申请号：US11848515
申请日：2007-08-31
申请人： Chungho Lee , Hiroyuki Kinoshita , Kuo-Tung Chang , Rinji Sugino , Chi Chang , Huaqiang Wu
发明人： Chungho Lee , Hiroyuki Kinoshita , Kuo-Tung Chang , Rinji Sugino , Chi Chang , Huaqiang Wu
IPC分类号： H01L21/311
CPC分类号： H01L29/7923 , H01L21/28273 , H01L21/28282 , H01L27/115 , H01L27/11521 , H01L27/11568 , H01L29/42332 , H01L29/42348 , H01L29/7887
摘要： Methods of replacing/reforming a top oxide around a charge storage element of a memory cell and methods of improving quality of a top oxide around a charge storage element of a memory cell are provided. The method can involve removing a first poly over a first top oxide from the memory cell; removing the first top oxide from the memory cell; and forming a second top oxide around the charge storage element. The second top oxide can be formed by oxidizing a portion of the charge storage element or by forming a sacrificial layer over the charge storage element and oxidizing the sacrificial layer to a second top oxide.
摘要翻译：提供了替换/重整存储单元的电荷存储元件周围的顶部氧化物的方法和提高存储单元的电荷存储元件周围的顶部氧化物的质量的方法。该方法可以包括从存储器单元去除第一顶部氧化物上的第一多晶硅; 从存储器单元中去除第一顶部氧化物; 以及在所述电荷存储元件周围形成第二顶部氧化物。可以通过氧化电荷存储元件的一部分或通过在电荷存储元件上形成牺牲层并将牺牲层氧化成第二顶部氧化物来形成第二顶部氧化物。

9. 发明授权

US08455268B2 Gate replacement with top oxide regrowth for the top oxide improvement 有权
标题翻译：门顶置换，顶部氧化物再生长，用于顶部氧化物改良
公开(公告)号：US08455268B2
公开(公告)日：2013-06-04
申请号：US11848515
申请日：2007-08-31
申请人： Chungho Lee , Hiroyuki Kinoshita , Kuo-Tung Chang , Rinji Sugino , Chi Chang , Huaqiang Wu
发明人： Chungho Lee , Hiroyuki Kinoshita , Kuo-Tung Chang , Rinji Sugino , Chi Chang , Huaqiang Wu
IPC分类号： H01L21/00 , H01L21/311
CPC分类号： H01L29/7923 , H01L21/28273 , H01L21/28282 , H01L27/115 , H01L27/11521 , H01L27/11568 , H01L29/42332 , H01L29/42348 , H01L29/7887
摘要： Methods of replacing/reforming a top oxide around a charge storage element of a memory cell and methods of improving quality of a top oxide around a charge storage element of a memory cell are provided. The method can involve removing a first poly over a first top oxide from the memory cell; removing the first top oxide from the memory cell; and forming a second top oxide around the charge storage element. The second top oxide can be formed by oxidizing a portion of the charge storage element or by forming a sacrificial layer over the charge storage element and oxidizing the sacrificial layer to a second top oxide.
摘要翻译：提供了替换/重整存储单元的电荷存储元件周围的顶部氧化物的方法和提高存储单元的电荷存储元件周围的顶部氧化物的质量的方法。该方法可以包括从存储器单元去除第一顶部氧化物上的第一多晶硅; 从存储器单元中去除第一顶部氧化物; 以及在所述电荷存储元件周围形成第二顶部氧化物。可以通过氧化电荷存储元件的一部分或通过在电荷存储元件上形成牺牲层并将牺牲层氧化成第二顶部氧化物来形成第二顶部氧化物。

10. 发明授权

US08329598B2 Sacrificial nitride and gate replacement 有权
标题翻译：牺牲氮化物和栅极替代
公开(公告)号：US08329598B2
公开(公告)日：2012-12-11
申请号：US13153558
申请日：2011-06-06
申请人： Chungho Lee , Kuo-Tung Chang , Hiroyuki Kinoshita , Huaqiang Wu , Fred Cheung
发明人： Chungho Lee , Kuo-Tung Chang , Hiroyuki Kinoshita , Huaqiang Wu , Fred Cheung
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L21/28282 , H01L21/3185 , H01L27/115 , H01L27/11568 , H01L29/42348 , H01L29/7923
摘要： Methods of forming a top oxide around a charge storage material layer of a memory cell and methods of improving quality of a top oxide around a charge storage material layer of a memory cell are provided. The method can involve providing a charge storage layer on a semiconductor substrate, a nitride layer on the charge storage layer, and a first poly layer on the nitride layer, and converting at least a portion of the nitride layer to a top oxide. By converting at least a portion of a nitride layer to a top oxide layer, the quality of the resultant top oxide layer can be improved.
摘要翻译：提供了在存储单元的电荷存储材料层周围形成顶部氧化物的方法以及提高存储单元的电荷存储材料层周围的顶部氧化物的质量的方法。该方法可以包括在半导体衬底上提供电荷存储层，电荷存储层上的氮化物层和氮化物层上的第一多晶硅层，并将氮化物层的至少一部分转化为顶部氧化物。通过将氮化物层的至少一部分转化为顶部氧化物层，可以提高所得顶部氧化物层的质量。

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