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    • 3. 发明申请
    • Multi-Chip Stacked Package Structure
    • 多芯片堆叠封装结构
    • US20090072361A1
    • 2009-03-19
    • US12122779
    • 2008-05-19
    • Geng-Shin SHENYu-Ren Chen
    • Geng-Shin SHENYu-Ren Chen
    • H01L23/495
    • H01L23/4951H01L23/49575H01L24/45H01L24/48H01L2224/32245H01L2224/451H01L2224/48091H01L2224/48095H01L2224/48247H01L2224/4826H01L2224/73215H01L2924/14H01L2924/181H01L2924/00014H01L2924/00H01L2924/00015H01L2924/00012
    • A multi-chip stacked package structure, comprising: a lead-frame having a top surface a back surface, the inner leads comprising a plurality of first inner leads and a plurality of second inner leads in parallel; a first chip fixedly connected to the back surface of the lead-frame, and the first chip having an active surface and a plurality of first pads adjacent to the central area of the active surface; a plurality of first metal wires electrically connected the first inner leads and the second inner leads and the first pads on the active surface of the first chip; a second chip fixedly connected to the top surface of the lead-frame, and the second chip having an active surface and a plurality of second pads adjacent to the central area of the active surface; a pair of the spacers provided on the thermal fin of the lead-frame; a plurality of second metal wires electrically connected to the top surface of first inner leads and the second inner leads and the second pads on the active surface of the second chip; and a package body encapsulated the first chip, the plurality of metal wires the second chip, the plurality of pads, the first inner leads and the second inner leads and to expose the outer leads.
    • 一种多芯片堆叠封装结构,包括:具有顶表面的后表面的引线框架,所述内引线包括多个第一内引线和多个第二内引线并联; 第一芯片固定地连接到引线框架的背面,并且第一芯片具有活性表面和与活性表面的中心区域相邻的多个第一焊盘; 多个第一金属线,电连接第一内引线和第二内引线以及第一芯片的有效表面上的第一焊盘; 固定地连接到引线框架的顶表面的第二芯片,并且第二芯片具有活动表面和与活动表面的中心区域相邻的多个第二焊盘; 设置在引线框架的散热片上的一对间隔件; 多个第二金属线,电连接到第一内引线的顶表面,第二内引线和第二芯片的有效表面上的第二焊盘; 以及封装体,其包封所述第一芯片,所述多个金属线,所述第二芯片,所述多个焊盘,所述第一内引线和所述第二内引线,以及露出所述外引线。
    • 7. 发明授权
    • Circuit and method for generating circuit power on reset signal
    • 用于产生电路上电复位信号的电路和方法
    • US07348817B2
    • 2008-03-25
    • US11366694
    • 2006-03-02
    • Chun-Yao LaioYu-Ren Chen
    • Chun-Yao LaioYu-Ren Chen
    • H03L7/00
    • H03K17/223G06F1/24H03K17/161H03K17/284
    • Disclosed is an improved circuit and method for generating a power on reset signal, the circuit being a two-stage circuit comprising a delay-stage circuit and an output-stage circuit. The delay-stage circuit delays a time for a power on reset signal generated in the output-stage circuit changing from low to high, so that a power voltage having a low rising speed may be normally reset. Further, the two stages provide charging paths and discharging paths so that the power on reset signal may be prevented from changing from high to low when it has changed from low to high, when noises are presented on the power voltage.
    • 公开了一种用于产生上电复位信号的改进的电路和方法,该电路是包括延迟级电路和输出级电路的两级电路。 延迟级电路延迟在输出级电路中产生的上电复位信号从低变为高的时间,使得具有低上升速度的电源电压可以被正常复位。 此外,两级提供充电路径和放电路径,使得当在电源电压上呈现噪声时,当从低电平变为高电平时,可以防止上电复位信号从高电平变为低电平。