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    • 7. 发明申请
    • ELECTROSTATIC DISCHARGE CIRCUIT USING INDUCTOR-TRIGGERED SILICON-CONTROLLED RECTIFIER
    • 使用电感触发式硅控制整流器的静电放电电路
    • US20110207409A1
    • 2011-08-25
    • US12711302
    • 2010-02-24
    • Ming-Do KERChun-Yu LIN
    • Ming-Do KERChun-Yu LIN
    • H04B1/00H01L27/06H01L23/60
    • H01L27/0262
    • A representative electrostatic discharge (ESD) protection circuit includes a silicon-controlled rectifier comprising an alternating arrangement of a first P-type semiconductor material, a first N-type semiconductor material, a second P-type semiconductor material and a second N-type semiconductor material electrically coupled between an anode and a cathode. The anode is electrically coupled to the first P-type semiconductor material and the cathode is electrically coupled to the second N-type semiconductor material. The ESD protection circuit further includes an inductor electrically coupled between the anode and the second P-type semiconductor material or between the cathode and the first N-type semiconductor material.
    • 代表性静电放电(ESD)保护电路包括可控硅整流器,其包括第一P型半导体材料,第一N型半导体材料,第二P型半导体材料和第二N型半导体材料的交替布置 电耦合在阳极和阴极之间的材料。 阳极电耦合到第一P型半导体材料,并且阴极电耦合到第二N型半导体材料。 ESD保护电路还包括电耦合在阳极和第二P型半导体材料之间或在阴极和第一N型半导体材料之间的电感器。