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1. 发明申请

US20120099228A1 ESD PROTECTION FOR RF CIRCUITS 有权
标题翻译：射频电路的ESD保护
公开(公告)号：US20120099228A1
公开(公告)日：2012-04-26
申请号：US12908064
申请日：2010-10-20
申请人： Chun-Yu LIN , Li-Wei CHU , Ming-Dou KER , Ming Hsien TSAI , Tse-Hua LU , Ping-Fang HUNG
发明人： Chun-Yu LIN , Li-Wei CHU , Ming-Dou KER , Ming Hsien TSAI , Tse-Hua LU , Ping-Fang HUNG
IPC分类号： H02H9/04
CPC分类号： H02H9/046 , H01L23/60 , H01L23/66 , H01L27/0248 , H01L27/0255 , H01L27/0288 , H01L2924/0002 , H01L2924/00
摘要： An electrostatic discharge (ESD) circuit, adaptive to a radio frequency (RF) device, which includes a RF circuit coupled between a VDD power rail and a VSS power rail and having a RF I/O pad, includes an ESD clamp circuit coupled between a VDD power rail node and the VSS power rail node and a LC-tank structure coupled between the VDD power rail node and the VSS power rail node and to the RF I/O pad. The LC-tank structure includes a first ESD block between the VDD power rail node and the RF I/O pad, and a second ESD block between the VSS power rail node and the RF I/O pad. At least one of the first and second ESD blocks includes a pair of diodes coupled in parallel with each other and an inductor coupled in series with one of the pair of diodes.
摘要翻译：适用于射频（RF）装置的静电放电（ESD）电路，其包括耦合在VDD电源轨和VSS电源轨之间并具有RF I / O焊盘的RF电路，包括耦合在 VDD电源轨节点和VSS电源轨节点以及耦合在VDD电源轨节点和VSS电源轨节点之间以及RF I / O焊盘的LC槽结构。 LC槽结构包括VDD电源轨节点和RF I / O焊盘之间的第一个ESD模块，以及VSS电源轨节点和RF I / O焊盘之间的第二个ESD模块。第一和第二ESD块中的至少一个包括彼此并联耦合的一对二极管和与一对二极管中的一个串联耦合的电感器。

2. 发明授权

US08854778B2 ESD protection circuit 有权
标题翻译： ESD保护电路
公开(公告)号：US08854778B2
公开(公告)日：2014-10-07
申请号：US13337463
申请日：2011-12-27
申请人： Li-Wei Chu , Chun-Yu Lin , Shiang-Yu Tsai , Ming-Dou Ker , Ming-Hsien Tsai , Tsun-Lai Hsu , Chew-Pu Jou
发明人： Li-Wei Chu , Chun-Yu Lin , Shiang-Yu Tsai , Ming-Dou Ker , Ming-Hsien Tsai , Tsun-Lai Hsu , Chew-Pu Jou
IPC分类号： H02H3/20
CPC分类号： H02H9/046 , H01L27/0288
摘要： An electrostatic discharge protection circuit includes an input node coupled to receive an input signal and an output node coupled to output the input signal to an internal circuit. A first inductor is coupled to the input node and to the output node, and a second inductor is coupled to the output node and to a first power supply node through a resistance. A plurality of protection devices are coupled to the first and second inductors and are disposed in parallel with each other.
摘要翻译：静电放电保护电路包括耦合以接收输入信号的输入节点和被耦合以将输入信号输出到内部电路的输出节点。第一电感器耦合到输入节点和输出节点，第二电感器通过电阻耦合到输出节点和第一电源节点。多个保护装置耦合到第一和第二电感器并且彼此平行地设置。

3. 发明申请

US20130163127A1 ESD PROTECTION CIRCUIT 有权
标题翻译： ESD保护电路
公开(公告)号：US20130163127A1
公开(公告)日：2013-06-27
申请号：US13337463
申请日：2011-12-27
申请人： Li-Wei CHU , Chun-Yu LIN , Shiang-Yu TSAI , Ming-Dou KER , Ming-Hsien TSAI , Tsun-Lai HSU , Chew-Pu JOU
发明人： Li-Wei CHU , Chun-Yu LIN , Shiang-Yu TSAI , Ming-Dou KER , Ming-Hsien TSAI , Tsun-Lai HSU , Chew-Pu JOU
IPC分类号： H02H9/04
CPC分类号： H02H9/046 , H01L27/0288
摘要： An electrostatic discharge protection circuit includes an input node coupled to receive an input signal and an output node coupled to output the input signal to an internal circuit. A first inductor is coupled to the input node and to the output node, and a second inductor is coupled to the output node and to a first power supply node through a resistance. A plurality of protection devices are coupled to the first and second inductors and are disposed in parallel with each other.
摘要翻译：静电放电保护电路包括耦合以接收输入信号的输入节点和被耦合以将输入信号输出到内部电路的输出节点。第一电感器耦合到输入节点和输出节点，第二电感器通过电阻耦合到输出节点和第一电源节点。多个保护装置耦合到第一和第二电感器并且彼此平行地设置。

4. 发明申请

US20120170161A1 ELECTROSTATIC DISCHARGE CIRCUIT FOR RADIO FREQUENCY TRANSMITTERS 有权
标题翻译：静电放电电路用于无线电频率发射机
公开(公告)号：US20120170161A1
公开(公告)日：2012-07-05
申请号：US12982004
申请日：2010-12-30
申请人： Chun-Yu LIN , Li-Wei CHU , Ming-Dou KER , Ming-Hsien TSAI , Ping-Fang HUNG , Ming-Hsiang SONG
发明人： Chun-Yu LIN , Li-Wei CHU , Ming-Dou KER , Ming-Hsien TSAI , Ping-Fang HUNG , Ming-Hsiang SONG
IPC分类号： H02H9/04
CPC分类号： H02H9/046 , H01L27/0262 , H03F3/24 , H04B1/0475 , H04B2001/0408
摘要： A representative electrostatic discharge (ESD) protection circuit includes a silicon-controlled rectifier (SCR) that is electrically coupled to the output of a power amplifier; an ESD detection circuit that triggers the SCR responsive to detect an electrostatic discharge on an ESD bus; and an ESD clamp circuit that is coupled to the first voltage line.
摘要翻译：代表性的静电放电（ESD）保护电路包括电耦合到功率放大器的输出的硅控整流器（SCR）; ESD检测电路，其触发SCR响应于检测ESD总线上的静电放电; 以及耦合到第一电压线的ESD钳位电路。

5. 发明授权

US08493705B2 Electrostatic discharge circuit for radio frequency transmitters 有权
标题翻译：射频发射机静电放电电路
公开(公告)号：US08493705B2
公开(公告)日：2013-07-23
申请号：US12982004
申请日：2010-12-30
申请人： Chun-Yu Lin , Li-Wei Chu , Ming-Dou Ker , Ming-Hsien Tsai , Ping-Fang Hung , Ming-Hsiang Song
发明人： Chun-Yu Lin , Li-Wei Chu , Ming-Dou Ker , Ming-Hsien Tsai , Ping-Fang Hung , Ming-Hsiang Song
IPC分类号： H02H9/04 , H01L29/66
CPC分类号： H02H9/046 , H01L27/0262 , H03F3/24 , H04B1/0475 , H04B2001/0408
摘要： A representative electrostatic discharge (ESD) protection circuit includes a silicon-controlled rectifier (SCR) that is electrically coupled to the output of a power amplifier; an ESD detection circuit that triggers the SCR responsive to detect an electrostatic discharge on an ESD bus; and an ESD clamp circuit that is coupled to the first voltage line.
摘要翻译：代表性的静电放电（ESD）保护电路包括电耦合到功率放大器的输出的硅控整流器（SCR）; ESD检测电路，其触发SCR响应于检测ESD总线上的静电放电; 以及耦合到第一电压线的ESD钳位电路。

6. 发明申请

US20050271126A1 High-speed transmission apparatus 审中-公开
标题翻译：高速传输装置
公开(公告)号：US20050271126A1
公开(公告)日：2005-12-08
申请号：US10860141
申请日：2004-06-04
申请人： Chen-Min Chiang , Li-Wei Chu
发明人： Chen-Min Chiang , Li-Wei Chu
IPC分类号： H04B1/38 , H04B1/40
CPC分类号： H04B1/40
摘要： A high-speed transceiver apparatus is connected between a USB controller of a host and a peripheral device. The transceiver apparatus has a dual-port memory with a first data port and a second data port, a DMA unit providing a data transmission between the second data port and the peripheral device, and a processor controlling the data access of the dual-port memory for the peripheral device. When the USB controller of the host accesses the dual-port memory through the first data port, the processor commands the peripheral device to access the dual-port memory through the second data port. The DMA unit controls the data transmission between the dual-port memory and the peripheral device.
摘要翻译：在主机的USB控制器和外围设备之间连接有高速收发器装置。收发器装置具有双端口存储器，其具有第一数据端口和第二数据端口，DMA单元提供第二数据端口和外围设备之间的数据传输，以及控制双端口存储器的数据访问的处理器用于外围设备。当主机的USB控制器通过第一个数据端口访问双端口存储器时，处理器命令外围设备通过第二个数据端口访问双端口存储器。 DMA单元控制双端口存储器和外围设备之间的数据传输。

7. 发明授权

US08279570B2 ESD protection for RF circuits 有权
标题翻译：射频电路的ESD保护
公开(公告)号：US08279570B2
公开(公告)日：2012-10-02
申请号：US12908064
申请日：2010-10-20
申请人： Chun-Yu Lin , Li-Wei Chu , Ming-Dou Ker , Ming Hsien Tsai , Tse-Hua Lu , Ping-Fang Hung
发明人： Chun-Yu Lin , Li-Wei Chu , Ming-Dou Ker , Ming Hsien Tsai , Tse-Hua Lu , Ping-Fang Hung
IPC分类号： H02H3/20 , H02H9/04
CPC分类号： H02H9/046 , H01L23/60 , H01L23/66 , H01L27/0248 , H01L27/0255 , H01L27/0288 , H01L2924/0002 , H01L2924/00
摘要： An electrostatic discharge (ESD) circuit, adaptive to a radio frequency (RF) device, which includes a RF circuit coupled between a VDD power rail and a VSS power rail and having a RF I/O pad, includes an ESD clamp circuit coupled between a VDD power rail node and the VSS power rail node and a LC-tank structure coupled between the VDD power rail node and the VSS power rail node and to the RF I/O pad. The LC-tank structure includes a first ESD block between the VDD power rail node and the RF I/O pad, and a second ESD block between the VSS power rail node and the RF I/O pad. At least one of the first and second ESD blocks includes a pair of diodes coupled in parallel with each other and an inductor coupled in series with one of the pair of diodes.
摘要翻译：适用于射频（RF）装置的静电放电（ESD）电路，其包括耦合在VDD电源轨和VSS电源轨之间并具有RF I / O焊盘的RF电路，包括耦合在 VDD电源轨节点和VSS电源轨节点以及耦合在VDD电源轨节点和VSS电源轨节点之间以及RF I / O焊盘的LC槽结构。 LC槽结构包括VDD电源轨节点和RF I / O焊盘之间的第一个ESD模块，以及VSS电源轨节点和RF I / O焊盘之间的第二个ESD模块。第一和第二ESD块中的至少一个包括彼此并联耦合的一对二极管和与一对二极管中的一个串联耦合的电感器。

8. 发明申请

US20120313104A1 ANALOG MEMORY CELL CIRCUIT FOR THE LTPS TFT-LCD 审中-公开
标题翻译：用于LTPS TFT-LCD的模拟存储单元电路
公开(公告)号：US20120313104A1
公开(公告)日：2012-12-13
申请号：US13267065
申请日：2011-10-06
申请人： Po-Tsun LIU , Li-Wei Chu , Guang-Ting Zheng
发明人： Po-Tsun LIU , Li-Wei Chu , Guang-Ting Zheng
IPC分类号： H01L33/08
CPC分类号： H01L27/1255 , G09G3/3659 , G09G2300/0842 , H01L33/08
摘要： The present invention provides an analog memory cell circuit for the LTPS TFT-LCD. The circuit comprises the first transistor, second transistor, the third transistor, the fourth transistor, the fifth transistor, the sixth transistor, the seventh transistor, and the capacitor. It comprises a plurality of operation period, wherein the transistors are controlled in accordance with the first scan signal, the second scan signal, and the third scan signal, the output signal is output in the opposite to the output jack.
摘要翻译：本发明提供一种用于LTPS TFT-LCD的模拟存储单元电路。该电路包括第一晶体管，第二晶体管，第三晶体管，第四晶体管，第五晶体管，第六晶体管，第七晶体管和电容器。它包括多个操作周期，其中根据第一扫描信号，第二扫描信号和第三扫描信号来控制晶体管，输出信号与输出插孔相反地输出。

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