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1. 发明授权

US07544618B2 Two-step chemical mechanical polishing process 有权
标题翻译：两步化学机械抛光工艺
公开(公告)号：US07544618B2
公开(公告)日：2009-06-09
申请号：US11419129
申请日：2006-05-18
申请人： Chun-Fu Chen , Yung-Tai Hung , Chi-Tung Huang , Yun-Chi Yang
发明人： Chun-Fu Chen , Yung-Tai Hung , Chi-Tung Huang , Yun-Chi Yang
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L21/31053 , C09G1/02 , H01L22/12 , H01L22/20
摘要： A chemical mechanical polishing method is disclosed. The method includes forming a film on a wafer having at least one trench structure thereon; polishing the surface of the film by providing a polishing composition to provide a first polished surface; rinsing the first polished surface with a rinse composition to provide a rinsed surface; and polishing the rinsed surface by providing a second polishing composition to provide a second polished surface.
摘要翻译：公开了一种化学机械抛光方法。该方法包括在其上具有至少一个沟槽结构的晶片上形成膜; 通过提供抛光组合物来抛光膜的表面以提供第一抛光表面; 用漂洗组合物漂洗第一抛光表面以提供漂洗表面; 并通过提供第二抛光组合物来抛光冲洗的表面以提供第二抛光表面。

2. 发明申请

US20070269985A1 TWO-STEP CHEMICAL MECHANICAL POLISHING PROCESS 有权
标题翻译：两步化学机械抛光工艺
公开(公告)号：US20070269985A1
公开(公告)日：2007-11-22
申请号：US11419129
申请日：2006-05-18
申请人： Chun-Fu Chen , Yung-Tai Hung , Chi-Tung Huang , Yun-Chi Yang
发明人： Chun-Fu Chen , Yung-Tai Hung , Chi-Tung Huang , Yun-Chi Yang
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L21/31053 , C09G1/02 , H01L22/12 , H01L22/20
摘要： A chemical mechanical polishing method is disclosed. The method includes forming a film on a wafer having at least one trench structure thereon; polishing the surface of the film by providing a polishing composition to provide a first polished surface; rinsing the first polished surface with a rinse composition to provide a rinsed surface; and polishing the rinsed surface by providing a second polishing composition to provide a second polished surface.
摘要翻译：公开了一种化学机械抛光方法。该方法包括在其上具有至少一个沟槽结构的晶片上形成膜; 通过提供抛光组合物来抛光膜的表面以提供第一抛光表面; 用漂洗组合物漂洗第一抛光表面以提供漂洗表面; 并通过提供第二抛光组合物来抛光冲洗的表面以提供第二抛光表面。

3. 发明申请

US20070054471A1 ALIGNMENT MARK AND METHOD OF FORMING THE SAME 审中-公开
标题翻译：对准标记及其形成方法
公开(公告)号：US20070054471A1
公开(公告)日：2007-03-08
申请号：US11162034
申请日：2005-08-26
申请人： Chun-Fu Chen , Chi-Tung Huang , Yung-Tai Hung
发明人： Chun-Fu Chen , Chi-Tung Huang , Yung-Tai Hung
IPC分类号： H01L21/00
CPC分类号： H01L23/544 , G03F9/7076 , H01L21/31604 , H01L2223/5442 , H01L2223/5448 , H01L2924/0002 , H01L2924/00
摘要： An alignment mark is fabricated containing a mark portion and a trench structure. The trench structure surrounds the mark portion and is at a distance from the mark portion. The mark portion has a plurality of notches. Due to the erosion effect caused by the trench structure, it can prevent the residue leave in the notches of the alignment mark.
摘要翻译：制造包含标记部分和沟槽结构的对准标记。沟槽结构围绕标记部分并且距标记部分一定距离。标记部分具有多个凹口。由于沟槽结构引起的侵蚀效应，可以防止残留物留在对准标记的凹口中。

4. 发明授权

US07361601B2 Chemical mechanical polish process and method for improving accuracy of determining polish endpoint thereof 有权
标题翻译：化学机械抛光工艺和提高确定其抛光终点的准确性的方法
公开(公告)号：US07361601B2
公开(公告)日：2008-04-22
申请号：US11160357
申请日：2005-06-21
申请人： Chun-Fu Chen , Chi-Tung Huang , Yung-Tai Hung , Chun-Chung Huang
发明人： Chun-Fu Chen , Chi-Tung Huang , Yung-Tai Hung , Chun-Chung Huang
IPC分类号： H01L21/461
CPC分类号： B24B37/013 , B24B49/12 , H01L22/26
摘要： A method for improving accuracy of determining polish endpoint of chemical mechanical polish (CMP) process is provided. The method is performed before the CMP process. First, a test wafer with a to-be-polished layer and a material layer under the to-be-polished layer is provided. Then, a test beam with a wavelength is provided to irradiate the test wafer. The CMP process is performed to the test wafer to remove the to-be-polished layer until the material layer is exposed while the reflection of the test beam during the polish process is continuously detected. The reflection tendency is detected when the to-be-polished layer is to be completely removed and when the CMP process reaches the interface between the to-be-polished layer and the material layer. If the reflection tendency is gradually weakened, the test beam with the wavelength is chosen for the subsequent polish process.
摘要翻译：提供了一种提高化学机械抛光（CMP）工艺抛光终点确定精度的方法。该方法在CMP过程之前执行。首先，提供具有待抛光层的测试晶片和待抛光层下面的材料层。然后，提供具有波长的测试光束以照射测试晶片。对测试晶片执行CMP处理以除去待抛光层，直到材料层暴露，同时连续检测在抛光过程期间测试光束的反射。当待抛光层被完全去除并且当CMP工艺到达待抛光层和材料层之间的界面时，检测反射趋势。如果反射趋势逐渐减弱，则选择具有波长的测试光束用于随后的抛光过程。

5. 发明申请

US20060283838A1 CHEMICAL MECHANICAL POLISH PROCESS AND METHOD FOR IMPROVING ACCURACY OF DETERMINING POLISH ENDPOINT THEREOF 有权
标题翻译：化学机械抛光工艺及其提高确定其抛光端点精度的方法
公开(公告)号：US20060283838A1
公开(公告)日：2006-12-21
申请号：US11160357
申请日：2005-06-21
申请人： Chun-Fu Chen , Chi-Tung Huang , Yung-Tai Hung , Chun-Chung Huang
发明人： Chun-Fu Chen , Chi-Tung Huang , Yung-Tai Hung , Chun-Chung Huang
IPC分类号： B44C1/22 , H01L21/461 , H01L21/302 , C03C15/00
CPC分类号： B24B37/013 , B24B49/12 , H01L22/26
摘要： A method for improving accuracy of determining polish endpoint of chemical mechanical polish (CMP) process is provided. The method is performed before the CMP process. First, a test wafer with a to-be-polished layer and a material layer under the to-be-polished layer is provided. Then, a test beam with a wavelength is provided to irradiate the test wafer. The CMP process is performed to the test wafer to remove the to-be-polished layer until the material layer is exposed while the reflection of the test beam during the polish process is continuously detected. The reflection tendency is detected when the to-be-polished layer is to be completely removed and when the CMP process reaches the interface between the to-be-polished layer and the material layer. If the reflection tendency is gradually weakened, the test beam with the wavelength is chosen for the subsequent polish process.
摘要翻译：提供了一种提高化学机械抛光（CMP）工艺抛光终点确定精度的方法。该方法在CMP过程之前执行。首先，提供具有待抛光层的测试晶片和待抛光层下面的材料层。然后，提供具有波长的测试光束以照射测试晶片。对测试晶片执行CMP处理以除去待抛光层，直到材料层暴露，同时连续检测在抛光过程期间测试光束的反射。当待抛光层被完全去除并且当CMP工艺到达待抛光层和材料层之间的界面时，检测反射趋势。如果反射趋势逐渐减弱，则选择具有波长的测试光束用于随后的抛光过程。

6. 发明授权

US07199018B2 Plasma assisted pre-planarization process 有权
标题翻译：等离子体辅助预平面化过程
公开(公告)号：US07199018B2
公开(公告)日：2007-04-03
申请号：US10837528
申请日：2004-04-30
申请人： Yung-Tai Hung , Chun-Fu Chen , Yun-Chi Yang , Chin-Hsiang Lin , Chen-Wei Liao
发明人： Yung-Tai Hung , Chun-Fu Chen , Yun-Chi Yang , Chin-Hsiang Lin , Chen-Wei Liao
IPC分类号： H91L21/76
CPC分类号： H01L21/31116 , H01L21/31055 , H01L21/76224
摘要： The present invention is related to methods of processing a semiconductor device. A plasma vapor deposition process is used to fill a trench with an oxide layer, wherein sharp corners are formed by the oxide layer. A pre-planarization sputtering process is performed to reduce the oxide layer corner sharpness. A planarization process is performed using polishing.
摘要翻译：本发明涉及半导体器件的处理方法。使用等离子体气相沉积工艺来填充具有氧化物层的沟槽，其中通过氧化物层形成尖角。进行预平面化溅射工艺以减少氧化物层拐角锐度。使用抛光进行平坦化处理。

7. 发明申请

US20050003668A1 Plasma assisted pre-planarization process 有权
标题翻译：等离子体辅助预平面化过程
公开(公告)号：US20050003668A1
公开(公告)日：2005-01-06
申请号：US10837528
申请日：2004-04-30
申请人： Yung-Tai Hung , Chun-Fu Chen , Yun-Chi Yang , Chin-Hsiang Lin , Chen-Wei Liao
发明人： Yung-Tai Hung , Chun-Fu Chen , Yun-Chi Yang , Chin-Hsiang Lin , Chen-Wei Liao
IPC分类号： H01L21/302 , H01L21/3105 , H01L21/311 , H01L21/762
CPC分类号： H01L21/31116 , H01L21/31055 , H01L21/76224
摘要： The present invention is related to methods of processing a semiconductor device. A plasma vapor deposition process is used to fill a trench with an oxide layer, wherein sharp corners are formed by the oxide layer. A pre-planarization sputtering process is performed to reduce the oxide layer corner sharpness. A planarization process is performed using polishing.
摘要翻译：本发明涉及半导体器件的处理方法。使用等离子体气相沉积工艺来填充具有氧化物层的沟槽，其中通过氧化物层形成尖角。进行预平面化溅射工艺以减少氧化物层拐角锐度。使用抛光进行平坦化处理。

8. 发明授权

US08445982B2 Method of forming a semiconductor device 有权
标题翻译：形成半导体器件的方法
公开(公告)号：US08445982B2
公开(公告)日：2013-05-21
申请号：US13156933
申请日：2011-06-09
申请人： Chin-Tsan Yeh , Chun-Fu Chen , Yung-Tai Hung , Chin-Ta Su
发明人： Chin-Tsan Yeh , Chun-Fu Chen , Yung-Tai Hung , Chin-Ta Su
IPC分类号： H01L21/76
CPC分类号： H01L21/76232
摘要： A polysilicon structure and method of forming the polysilicon structure are disclosed, where the method includes a two-step deposition and planarization process. The disclosed process reduces the likelihood of defects such as voids, particularly where polysilicon is deposited in a trench having a high aspect ratio. A first polysilicon structure is deposited that includes a trench liner portion and a first upper portion. The trench liner portion only partially fills the trench, while the first upper portion extends over the adjacent field isolation structures. Next, at least a portion of the first upper portion of the first polysilicon structure is removed. A second polysilicon structure is then deposited that includes a trench plug portion and a second upper portion. The trench is filled by the plug portion, while the second upper portion extends over the adjacent field isolation structures. The second upper portion is then removed.
摘要翻译：公开了多晶硅结构和形成多晶硅结构的方法，其中该方法包括两步沉积和平坦化处理。所公开的方法降低诸如空隙的缺陷的可能性，特别是在具有高纵横比的沟槽中沉积多晶硅时。沉积包括沟槽衬垫部分和第一上部部分的第一多晶硅结构。沟槽衬垫部分仅部分地填充沟槽，而第一上部部分在相邻的隔离结构上延伸。接下来，去除第一多晶硅结构的第一上部的至少一部分。然后沉积包括沟槽塞部分和第二上部部分的第二多晶硅结构。沟槽由插头部分填充，而第二上部部分延伸在相邻的隔离结构上。然后移除第二个上部。

9. 发明申请

US20120313214A1 POLYSILICON STRUCTURE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：多晶硅结构及其制造方法
公开(公告)号：US20120313214A1
公开(公告)日：2012-12-13
申请号：US13156933
申请日：2011-06-09
申请人： Chin-Tsan Yeh , Chun-Fu Chen , Yung-Tai Hung , Chin-Ta Su
发明人： Chin-Tsan Yeh , Chun-Fu Chen , Yung-Tai Hung , Chin-Ta Su
IPC分类号： H01L29/06 , H01L21/762
CPC分类号： H01L21/76232
摘要： A polysilicon structure and method of forming the polysilicon structure are disclosed, where the method includes a two-step deposition and planarization process. The disclosed process reduces the likelihood of defects such as voids, particularly where polysilicon is deposited in a trench having a high aspect ratio. A first polysilicon structure is deposited that includes a trench liner portion and a first upper portion. The trench liner portion only partially fills the trench, while the first upper portion extends over the adjacent field isolation structures. Next, at least a portion of the first upper portion of the first polysilicon structure is removed. A second polysilicon structure is then deposited that includes a trench plug portion and a second upper portion. The trench is filled by the plug portion, while the second upper portion extends over the adjacent field isolation structures. The second upper portion is then removed.
摘要翻译：公开了多晶硅结构和形成多晶硅结构的方法，其中该方法包括两步沉积和平坦化处理。所公开的方法降低诸如空隙的缺陷的可能性，特别是在具有高纵横比的沟槽中沉积多晶硅时。沉积包括沟槽衬垫部分和第一上部部分的第一多晶硅结构。沟槽衬垫部分仅部分地填充沟槽，而第一上部部分在相邻的隔离结构上延伸。接下来，去除第一多晶硅结构的第一上部的至少一部分。然后沉积包括沟槽塞部分和第二上部部分的第二多晶硅结构。沟槽由插塞部分填充，而第二上部部分延伸在相邻的隔离结构上。然后移除第二个上部。

10. 发明申请

US20090029551A1 Pad and method for chemical mechanical polishing 有权
标题翻译：化学机械抛光垫和方法
公开(公告)号：US20090029551A1
公开(公告)日：2009-01-29
申请号：US11878654
申请日：2007-07-26
申请人： Chun-Fu Chen , Yung-Tai Hung , Chin-Ta Su , Kuang-Chao Chen
发明人： Chun-Fu Chen , Yung-Tai Hung , Chin-Ta Su , Kuang-Chao Chen
IPC分类号： H01L21/461 , C09K13/00
CPC分类号： B24B37/24 , B24D3/346
摘要： A method for chemical-mechanical polishing two adjacent structures of a semiconductor device is provided. The method for mechanical polishing comprising: (a) providing a semiconductor device comprising a recess formed in a surface thereof, a first layer formed over the surface, and a second layer filled with the recess and formed on the first layer; and (b) substantially polishing the first and second layer with a pad and a substantially inhibitor-free slurry, wherein the pad comprising a corrosion inhibitor of the second layer.
摘要翻译：提供了半导体器件的两个相邻结构的化学机械抛光方法。一种用于机械抛光的方法，包括：（a）提供半导体器件，其包括在其表面形成的凹部，形成在所述表面上的第一层，以及填充有所述凹部并形成在所述第一层上的第二层; 和（b）用垫和基本上无抑制剂的浆料基本上抛光第一层和第二层，其中该垫包括第二层的腐蚀抑制剂。

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