专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20050120581A1 PROCESS FOR REMOVING WATER FROM AMMONIA 有权
标题翻译：从氨水中去除水的方法
公开(公告)号：US20050120581A1
公开(公告)日：2005-06-09
申请号：US10730505
申请日：2003-12-08
申请人： Robert Ling Chiang , Roger Dean Whitley , Dingjun Wu , Chun Christine Dong , Madhukar Bhaskara Rao
发明人： Robert Ling Chiang , Roger Dean Whitley , Dingjun Wu , Chun Christine Dong , Madhukar Bhaskara Rao
IPC分类号： B01J19/00 , B01D53/28 , B01J8/00 , B01J19/02 , B01J20/04 , B01J20/32 , C01B21/04 , C01B23/00 , C01C1/02 , F26B3/00
CPC分类号： B01D53/28 , B01J20/041 , B01J20/08 , B01J20/28057 , B01J20/3078 , B01J20/3204 , B01J20/3236 , B01J2220/42 , B01J2220/56 , C01B21/0455 , C01B23/0057 , C01B2210/0042 , C01B2210/0062 , C01C1/024
摘要： This invention relates to an improvement in a process for removing water from a hydride gas, and particularly ammonia, by contacting the hydride gas with a drying agent under conditions for effecting removal of the water. The improvement for significantly reducing the water content to trace levels in said hydride gas resides in the use of at least Group 1 metal oxide and at least one Group 2 metal oxide as a drying agent.
摘要翻译：本发明涉及通过在有效去除水分的条件下使氢化物气体与干燥剂接触而从氢化物气体，特别是氨中除去水的方法。在所述氢化物气体中显着降低水含量至痕量水平的改进在于使用至少第1族金属氧化物和至少一种第2族金属氧化物作为干燥剂。

2. 发明授权

US06709487B1 Adsorbent for moisture removal from fluorine-containing fluids 有权
标题翻译：用于从含氟流体中除湿的吸附剂
公开(公告)号：US06709487B1
公开(公告)日：2004-03-23
申请号：US10278131
申请日：2002-10-22
申请人： Chun Christine Dong , Madhukar Bhaskara Rao , Dingjun Wu
发明人： Chun Christine Dong , Madhukar Bhaskara Rao , Dingjun Wu
IPC分类号： B01D5304
CPC分类号： B01D53/261 , B01D53/28 , Y10S95/90
摘要： An adsorbent, method, and apparatus involving same for the removal of moisture from a fluoride-containing fluid such as gaseous nitrogen trifluoride are disclosed herein. In certain preferred embodiments, the adsorbent of the present invention comprises an organic support having a porosity of 30% or greater and a pore size of 2 &mgr;m or less; and at least one metal fluoride disposed within at least a portion of the organic substrate.
摘要翻译：本文公开了一种用于从含氟化物的流体例如气态三氟化氮中除去水分的吸附剂，方法和装置。在某些优选的实施方式中，本发明的吸附剂包含孔隙率为30％以上，孔径为2μm以下的有机载体，以及至少一种配置在有机基材的至少一部分内的金属氟化物。

3. 发明授权

US07446078B2 Adsorbent for water removal from ammonia 有权
标题翻译：用于从氨去除水的吸附剂
公开(公告)号：US07446078B2
公开(公告)日：2008-11-04
申请号：US10191719
申请日：2002-07-09
申请人： Chun Christine Dong , Madhukar Bhaskara Rao , Dingjun Wu
发明人： Chun Christine Dong , Madhukar Bhaskara Rao , Dingjun Wu
IPC分类号： B01J20/00
CPC分类号： B01J20/28078 , B01J20/0211 , B01J20/0222 , B01J20/0225 , B01J20/0229 , B01J20/0244 , B01J20/0248 , B01J20/0281 , B01J20/0288 , B01J20/045 , B01J20/046 , B01J20/08 , B01J20/28057 , B01J20/3204 , B01J20/3234 , B01J20/3236 , B01J20/3441 , B01J20/3483 , C01C1/024 , C01P2006/82
摘要： The present invention provides an adsorbent for removing water and/or other oxygen-containing impurities from a fluid comprising ammonia to the ppb level and methods for making and using same. The adsorbent preferably comprises a substrate having a plurality of pores and a surface area that ranges from about 100 to about 2,500 m2/g and a compound disposed within a least a portion of the substrate. In certain preferred embodiments, the compound comprises at least one cation from the group consisting of ammonium (I), lithium (I), sodium (I), potassium (I), cesium (I); magnesium (II), calcium (II), strontium (II), barium (II), manganese (II), nickel (II), iron (II), zinc (II); aluminum (III), indium (III), iron (III), and zirconium (IV) or combinations thereof that is ionically associated with an anion from the group consisting of halide, sulfide, sulfite, or sulfate.
摘要翻译：本发明提供了一种用于从包含氨的流体到ppb级除去水和/或其它含氧杂质的吸附剂，以及制造和使用它们的方法。吸附剂优选包括具有多个孔和约100至约2500m 2 / g范围的表面积的基底和设置在基底的至少一部分内的化合物。在某些优选的实施方案中，该化合物包括至少一种阳离子，由铵（I），锂（I），钠（I），钾（I），铯（I）镁（II），钙（II），锶（II），钡（II），锰（II），镍（II），铁（II），锌（II）与由卤化物，硫化物，亚硫酸盐或硫酸盐组成的组中的阴离子离子键合的铝（III），铟（III），铁（III）和锆（IV）或其组合。

4. 发明申请

US20050120877A1 Purification of hydride gases 有权
标题翻译：氢化物气体的净化
公开(公告)号：US20050120877A1
公开(公告)日：2005-06-09
申请号：US10730506
申请日：2003-12-08
申请人： Dingjun Wu , Timothy Christopher Golden , Chun Christine Dong , Paula Jean Battavio
发明人： Dingjun Wu , Timothy Christopher Golden , Chun Christine Dong , Paula Jean Battavio
IPC分类号： B01D53/26 , B01D53/02 , B01J20/00 , B01J20/02 , B01J20/04 , B01J20/06 , B01J20/18 , B01J20/28 , B01J20/30 , B01J20/32 , C01B3/56 , C01B6/34 , C01B21/04 , C01B23/00 , C01B25/06 , C01B33/04 , C01C1/02
CPC分类号： B01J20/041 , B01D53/02 , B01J20/06 , B01J20/08 , B01J20/103 , B01J20/18 , B01J20/20 , B01J20/28057 , B01J20/3204 , B01J20/3236 , B01J20/3289 , B01J2220/42 , C01B3/56 , C01B6/34 , C01B21/0455 , C01B23/0057 , C01B25/06 , C01B33/046 , C01B2203/042 , C01B2203/0465 , C01B2203/0475 , C01B2203/0495 , C01B2210/0042 , C01B2210/0045 , C01B2210/0051 , C01B2210/0062 , C01C1/024 , Y10S95/90 , Y10S95/901
摘要： Purification material for removing a contaminant from an impure hydride gas comprising an adsorbent comprising a reduced metal oxide on a porous support and a desiccant. The porous support may be selected from the group consisting of activated carbon, alumina, silica, zeolite, silica alumina, titania, zirconia, and combinations thereof. The reduced metal oxide may comprise one or more metals selected from the group consisting of Group I alkali metals (lithium, sodium, potassium, rubidium, and cesium), Group II alkaline earth metals (magnesium, calcium, strontium, and barium), and transition metals (manganese, nickel, zinc, iron, molybdenum, tungsten, titanium, vanadium, cobalt, and rhodium). The desiccant may be selected from the group consisting of hygroscopic metal salts, zeolites, single metal oxides, mixed metal oxides, and combinations thereof.
摘要翻译：用于从不纯的氢化物气体中除去污染物的净化材料，其包含在多孔载体上的还原金属氧化物的吸附剂和干燥剂。多孔载体可以选自活性炭，氧化铝，二氧化硅，沸石，二氧化硅氧化铝，二氧化钛，氧化锆及其组合。还原的金属氧化物可以包含一种或多种选自第I族碱金属（锂，钠，钾，铷和铯），II族碱土金属（镁，钙，锶和钡）的金属和过渡金属（锰，镍，锌，铁，钼，钨，钛，钒，钴和铑）。干燥剂可以选自吸湿金属盐，沸石，单金属氧化物，混合金属氧化物及其组合。

5. 发明授权

US07160360B2 Purification of hydride gases 有权
标题翻译：氢化物气体的净化
公开(公告)号：US07160360B2
公开(公告)日：2007-01-09
申请号：US10730506
申请日：2003-12-08
申请人： Dingjun Wu , Timothy Christopher Golden , Chun Christine Dong , Paula Jean Battavio
发明人： Dingjun Wu , Timothy Christopher Golden , Chun Christine Dong , Paula Jean Battavio
IPC分类号： B01D53/02
CPC分类号： B01J20/041 , B01D53/02 , B01J20/06 , B01J20/08 , B01J20/103 , B01J20/18 , B01J20/20 , B01J20/28057 , B01J20/3204 , B01J20/3236 , B01J20/3289 , B01J2220/42 , C01B3/56 , C01B6/34 , C01B21/0455 , C01B23/0057 , C01B25/06 , C01B33/046 , C01B2203/042 , C01B2203/0465 , C01B2203/0475 , C01B2203/0495 , C01B2210/0042 , C01B2210/0045 , C01B2210/0051 , C01B2210/0062 , C01C1/024 , Y10S95/90 , Y10S95/901
摘要： Purification material for removing a contaminant from an impure hydride gas comprising an adsorbent comprising a reduced metal oxide on a porous support and a desiccant. The porous support may be selected from the group consisting of activated carbon, alumina, silica, zeolite, silica alumina, titania, zirconia, and combinations thereof. The reduced metal oxide may comprise one or more metals selected from the group consisting of Group I alkali metals (lithium, sodium, potassium, rubidium, and cesium), Group II alkaline earth metals (magnesium, calcium, strontium, and barium), and transition metals (manganese, nickel, zinc, iron, molybdenum, tungsten, titanium, vanadium, cobalt, and rhodium). The desiccant may be selected from the group consisting of hygroscopic metal salts, zeolites, single metal oxides, mixed metal oxides, and combinations thereof.
摘要翻译：用于从不纯的氢化物气体中除去污染物的净化材料，其包含在多孔载体上的还原金属氧化物的吸附剂和干燥剂。多孔载体可以选自活性炭，氧化铝，二氧化硅，沸石，二氧化硅氧化铝，二氧化钛，氧化锆及其组合。还原的金属氧化物可以包含一种或多种选自第I族碱金属（锂，钠，钾，铷和铯），II族碱土金属（镁，钙，锶和钡）的金属和过渡金属（锰，镍，锌，铁，钼，钨，钛，钒，钴和铑）。干燥剂可以选自吸湿金属盐，沸石，单金属氧化物，混合金属氧化物及其组合。

6. 发明申请

US20060040508A1 Method to protect internal components of semiconductor processing equipment using layered superlattice materials 失效
标题翻译：使用分层超晶格材料保护半导体加工设备的内部部件的方法
公开(公告)号：US20060040508A1
公开(公告)日：2006-02-23
申请号：US10924321
申请日：2004-08-23
申请人： Bing Ji , Stephen Motika , Dingjun Wu , Eugene Karwacki , David Roberts
发明人： Bing Ji , Stephen Motika , Dingjun Wu , Eugene Karwacki , David Roberts
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01J37/32495 , B01J2219/024 , C23C16/4404
摘要： This invention relates to apparatus and a method to protect the internal components of semiconductor processing equipment such as a plasma reactor or a reactive species generator against physical and/or chemical damages during etching and/or cleaning processes. Layered superlattice materials having three or more metal elements such as strontium bismuth tantalate (SBT) are used to form a protective barrier on the surfaces of the internal components of a reaction chamber.
摘要翻译：本发明涉及在蚀刻和/或清洁过程中保护诸如等离子体反应器或反应物种发生器的半导体加工设备的内部部件抵抗物理和/或化学损伤的装置和方法。使用具有三种或更多种金属元素的层状超晶格材料，例如钽酸锶钡（SBT），在反应室的内部组分的表面上形成保护屏障。

7. 发明申请

US20080047579A1 Detecting the endpoint of a cleaning process 审中-公开
标题翻译：检测清洁过程的终点
公开(公告)号：US20080047579A1
公开(公告)日：2008-02-28
申请号：US11510190
申请日：2006-08-25
申请人： Bing Ji , Stephen Andrew Motika , Dingjun Wu , Eugene Joseph Karwacki
发明人： Bing Ji , Stephen Andrew Motika , Dingjun Wu , Eugene Joseph Karwacki
IPC分类号： B08B6/00 , B08B7/04
CPC分类号： B08B7/0035 , H01J37/32935 , H01J37/32963
摘要： A method for determining the endpoint of a cleaning process in which a metallic residue is removed from an underlying surface which comprises a metal by contacting the residue with a cleaning agent which volatilizes the residue and which tends to attack the metal of the underlying surface and volatilizes it if the cleaning process is not terminated timely, and in which the metal comprising the underlying surface is more reactive with the cleaning agent than the metal of the metallic residue, the improvement which comprises terminating the cleaning process at a time when the ratio of the amount of volatilized metal to the amount of cleaning agent increases from a lower to a higher value.
摘要翻译：一种确定清洁方法的终点的方法，其中金属残留物从下面的表面除去，该金属残留物通过使残留物与残留物挥发并且易于侵蚀下面的表面的金属并使其挥发的清洁剂接触，如果清洁过程没有及时终止，并且其中包含下面的表面的金属与金属残余物的金属比清洁剂更有反应性，其改进包括在第挥发性金属的量与清洁剂的量从较低值增加到较高值。

8. 发明申请

US20050112901A1 Removal of transition metal ternary and/or quaternary barrier materials from a substrate 失效
标题翻译：从基底去除过渡金属三元和/或四元阻挡材料
公开(公告)号：US20050112901A1
公开(公告)日：2005-05-26
申请号：US10942301
申请日：2004-09-15
申请人： Bing Ji , Martin Plishka , Dingjun Wu , Peter Badowski , Eugene Karwacki
发明人： Bing Ji , Martin Plishka , Dingjun Wu , Peter Badowski , Eugene Karwacki
IPC分类号： C23C16/44 , C23G5/00 , H01L21/302 , H01L21/3213 , H01L21/44 , H01L21/461
CPC分类号： H01L21/32135 , C23C16/4405 , C23G5/00 , H01L21/32136 , Y10S438/905
摘要： A process for the selective removal of a substance from a substrate for etching and/or cleaning applications is disclosed herein. In one embodiment, there is provided a process for removing a substance from a substrate comprising: providing the substrate having the substance deposited thereupon wherein the substance comprises a transition metal ternary compound, a transition metal quaternary compound, and combinations thereof; reacting the substance with a process gas comprising a fluorine-containing gas and optionally an additive gas to form a volatile product; and removing the volatile product from the substrate to thereby remove the substance from the substrate.
摘要翻译：本文公开了用于选择性地从衬底中去除蚀刻和/或清洁应用的物质的方法。在一个实施方案中，提供了从基材中除去物质的方法，包括：提供具有沉积在其上的物质的基材，其中所述物质包含过渡金属三元化合物，过渡金属季铵化合物及其组合; 使物质与包含含氟气体和任选的添加气体的工艺气体反应以形成挥发性产物; 并从基材中除去挥发性产物，从而从基材中除去物质。

9. 发明授权

US08399349B2 Materials and methods of forming controlled void 有权
标题翻译：形成受控空隙的材料和方法
公开(公告)号：US08399349B2
公开(公告)日：2013-03-19
申请号：US11693707
申请日：2007-03-29
申请人： Raymond Nicholas Vrtis , Dingjun Wu , Mark Leonard O'Neill , Mark Daniel Bitner , Jean Louise Vincent , Eugene Joseph Karwacki, Jr. , Aaron Scott Lukas
发明人： Raymond Nicholas Vrtis , Dingjun Wu , Mark Leonard O'Neill , Mark Daniel Bitner , Jean Louise Vincent , Eugene Joseph Karwacki, Jr. , Aaron Scott Lukas
IPC分类号： H01L21/4763
CPC分类号： H01L21/764 , H01L21/02115 , H01L21/02126 , H01L21/02172 , H01L21/02203 , H01L21/02205 , H01L21/02263 , H01L21/02274 , H01L21/02282 , H01L21/30604 , H01L21/31695 , H01L21/423 , H01L21/7682 , H01L2221/1047
摘要： The present invention is a process for forming an air gap within a substrate, the process comprising: providing a substrate; depositing a sacrificial material by deposition of at least one sacrificial material precursor; depositing a composite layer; removale of the porogen material in the composite layer to form a porous layer and contacting the layered substrate with a removal media to substantially remove the sacrificial material and provide the air gaps within the substrate; wherein the at least one sacrificial material precursor is selected from the group consisting of: an organic porogen; silicon, and a polar solvent soluble metal oxide and mixtures thereof.
摘要翻译：本发明是一种在衬底内形成气隙的方法，该方法包括：提供衬底; 通过沉积至少一种牺牲材料前体沉积牺牲材料; 沉积复合层; 去除复合层中的致孔剂材料以形成多孔层并使分层的基底与去除介质接触，以基本上去除牺牲材料并在基底内提供气隙; 其中所述至少一种牺牲材料前体选自：有机致孔剂; 硅和极性溶剂可溶性金属氧化物及其混合物。

10. 发明申请

US20060016783A1 Process for titanium nitride removal 审中-公开
标题翻译：氮化钛去除工艺
公开(公告)号：US20060016783A1
公开(公告)日：2006-01-26
申请号：US10896588
申请日：2004-07-22
申请人： Dingjun Wu , Bing Ji , Eugene Karwacki
发明人： Dingjun Wu , Bing Ji , Eugene Karwacki
IPC分类号： C23F1/00 , H01L21/306
CPC分类号： C23G5/00 , C23C16/4405 , H01L21/32135 , H01L21/32136
摘要： A process of removing titanium nitride from a surface of a substrate includes: providing a process gas including at least one reactant selected from the group consisting of a fluorine-containing substance and a chlorine-containing substance; enriching the process gas with at least one reactive species of the at least one reactant to form an enriched process gas, wherein the enriching is conducted at a first location; providing the substrate at a substrate temperature greater than 50° C., wherein the surface of the substrate is at least partially coated with the titanium nitride; and contacting the titanium nitride on the surface of the substrate with the enriched process gas to volatilize and remove the titanium nitride from the surface of the substrate, wherein the contacting occurs at a second location differing from the first location.
摘要翻译：从衬底表面除去氮化钛的方法包括：提供包含至少一种选自含氟物质和含氯物质的反应物的工艺气体; 用所述至少一种反应物的至少一种反应性物质富集工艺气体以形成富集的工艺气体，其中所述富集在第一位置进行; 在大于50℃的衬底温度下提供衬底，其中衬底的表面至少部分地涂覆有氮化钛; 以及使所述基底表面上的所述氮化钛与所述富集的工艺气体接触，以从所述衬底的表面挥发和去除所述氮化钛，其中所述接触发生在与所述第一位置不同的第二位置处。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式