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    • 3. 发明授权
    • Technique for quasi-phase matching
    • 准相位匹配技术
    • US06710912B1
    • 2004-03-23
    • US10326124
    • 2002-12-23
    • Robert John FilkinsPeter William Lorraine
    • Robert John FilkinsPeter William Lorraine
    • G02F1355
    • G02F1/3775G02F2001/3548G02F2202/32
    • A technique for achieving quasi phase matching in a photonic band gap structure comprising a first material and a second material is disclosed. In one particular exemplary embodiment, the technique may be realized by calculating a coherence length of an optical interaction of interest involving at least a first frequency and a second frequency; calculating a first lattice constant of the first material to achieve a predetermined first group velocity for a fundamental optical frequency; calculating a second lattice constant of the second material so that a second group velocity of a second optical frequency is substantially the same as the first group velocity associated with the fundamental optical frequency of the first material; determining a photonic band gap arrangement for achieving quasi phase matching in the photonic band gap structure; and implementing the first lattice constant of the first material and the second lattice constant of the second material in accordance with the photonic band gap arrangement to achieve quasi phase matching in the photonic band gap structure.
    • 公开了一种在包括第一材料和第二材料的光子带隙结构中实现准相位匹配的技术。 在一个特定示例性实施例中,可以通过计算涉及至少第一频率和第二频率的感兴趣的光学相互作用的相干长度来实现该技术; 计算第一材料的第一晶格常数以实现基本光频率的预定的第一组速度; 计算第二材料的第二晶格常数,使得第二光频率的第二组速度与与第一材料的基本光频率相关联的第一组速度基本相同; 确定用于实现光子带隙结构中的准相位匹配的光子带隙布置; 并且根据光子带隙布置实现第一材料的第一晶格常数和第二材料的第二晶格常数,以实现光子带隙结构中的准相位匹配。
    • 10. 发明授权
    • High density integrated ultrasonic phased array transducer and a method
for making
    • 高密度集成超声波相控阵传感器及其制造方法
    • US5644085A
    • 1997-07-01
    • US415895
    • 1995-04-03
    • Peter William LorraineVenkat Subramaniam Venkataramani
    • Peter William LorraineVenkat Subramaniam Venkataramani
    • B06B1/06H04R17/00H01L41/08
    • B06B1/0629Y10T29/42
    • The present invention discloses a high density integrated ultrasonic phased array transducer and method for making. The high density integrated ultrasonic phased array includes a backfill material having an array of holes formed therein. Each of the holes are separated a predetermined distance apart from each other and have a predetermined hole depth. Each of the holes contain a conducting material deposited therein forming a high density interconnect with uniaxial conductivity. A piezoelectric ceramic material is bonded to the backfill material at a surface opposite the array of conducting holes. Matching layers are bonded to the piezoelectric ceramic material. The surface opposite the array of conducting holes is cut through a portion of the matching layers, the piezoelectric ceramic material, and the backfill material, forming an array of isolated individual elements each having multiple electrical connections therein.
    • 本发明公开了一种高密度集成超声相控阵变换器及其制造方法。 高密度集成超声波相控阵列包括其中形成有孔阵列的回填材料。 每个孔彼此分开预定的距离并具有预定的孔深度。 每个孔包含沉积在其中的导电材料,形成具有单轴导电性的高密度互连。 压电陶瓷材料在与导电孔阵列相对的表面处结合到回填材料。 匹配层结合到压电陶瓷材料上。 与导电孔阵列相对的表面通过一部分匹配层,压电陶瓷材料和回填材料切割,形成各自具有多个电连接的独立单独元件的阵列。