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1. 发明授权

US08433380B1 Mössbauer spectroscopy system for applying external magnetic field at cryogenic temperature using refrigerator 有权
标题翻译：使用冰箱在低温下应用外部磁场的Mössbauer光谱系统
公开(公告)号：US08433380B1
公开(公告)日：2013-04-30
申请号：US13338871
申请日：2011-12-28
申请人： Chul-Sung Kim , Bong-Yeon Won
发明人： Chul-Sung Kim , Bong-Yeon Won
IPC分类号： H01F39/00
CPC分类号： G21K1/12
摘要： A Mössbauer spectroscopy system for applying an external magnetic field at cryogenic temperature using a refrigerator is provided. A Mössbauer spectrum can be obtained by applying the external magnetic field while changing the temperature of a superconducting magnet and a sample from a cryogenic temperature using the refrigerator, the external magnetic field can be applied while cooling the superconducting magnet using the refrigerator without the need for use of a liquid helium, thereby saving the operation cost according to consumption of the liquid helium, the mounting of a sample which it is desired to measure is easy, thereby minimizing a possibility that a worker will be exposed to gamma rays, and a convenience in use of a user can be improved.
摘要翻译：提供了一种使用冰箱在低温下施加外部磁场的莫斯堡分光系统。通过在使用冰箱从低温温度改变超导磁体和样品的温度的同时施加外部磁场可以获得Mössbauer光谱，可以在使用冰箱冷却超导磁体的同时施加外部磁场，而不需要使用液氦，从而根据液氦的消耗节省操作成本，因此希望测量的样品的安装容易，从而最小化了工作人员将会暴露于γ射线的可能性，并且方便在使用中可以改善用户。

2. 发明授权

US09026418B2 Method for determining distinct alternative paths between two object sets in 2-D and 3-D heterogeneous data 有权
标题翻译：用于确定2-D和3-D异构数据中两个对象集之间的不同备选路径的方法
公开(公告)号：US09026418B2
公开(公告)日：2015-05-05
申请号：US12747778
申请日：2009-01-21
申请人： Chul-Sung Kim , Mark Dobin
发明人： Chul-Sung Kim , Mark Dobin
IPC分类号： G06G7/50 , G06G7/48 , G01V99/00
CPC分类号： G01V99/00 , G01V1/302 , G01V99/005 , G01V2210/641 , G01V2210/644
摘要： Distinct paths (40), e.g., locally optimal, are determined in a heterogeneous velocity field (32) between a source object and a target object (33) using gradients (35) of a two-way total arrival time field (34). The foregoing technique may be used to assess hydrocarbon reservoir connectivity.
摘要翻译：使用双向总到达时间字段（34）的梯度（35）在源对象和目标对象（33）之间的异质速度场（32）中确定不同路径（40），例如局部最佳。上述技术可用于评估烃储层连通性。

3. 发明授权

US09022129B2 Tracking geologic object and detecting geologic anomalies in exploration seismic data volume 有权
标题翻译：勘探地震数据量跟踪地质物体和地质异常检测
公开(公告)号：US09022129B2
公开(公告)日：2015-05-05
申请号：US13059780
申请日：2009-07-02
申请人： Mark W. Dobin , Chul-Sung Kim , Ross Whitaker
发明人： Mark W. Dobin , Chul-Sung Kim , Ross Whitaker
IPC分类号： G01V1/30
CPC分类号： G01V1/301 , G06T7/11 , G06T7/269 , G06T7/30 , G06T2200/04 , G06T2207/20096
摘要： A method and system are described for identifying a geologic object through cross sections of a geologic data volume. The method includes obtaining a geologic data volume having a set of cross sections. Then, two or more cross sections are selected and a transformation vector is estimated between the cross sections. Based on the transformation vector, a geologic object is identified within the geologic data volume.
摘要翻译：描述了通过地质数据量的横截面识别地质物体的方法和系统。该方法包括获得具有一组横截面的地质数据体积。然后，选择两个或更多个横截面，并且在横截面之间估计变换矢量。基于变换向量，在地质数据量中识别出地质对象。

4. 发明申请

US20130316535A1 METHODS OF FORMING SEMICONDUCTOR DEVICES WITH METAL SILICIDE USING PRE-AMORPHIZATION IMPLANTS AND DEVICES SO FORMED 有权
标题翻译：使用预成型植入物和形成的器件形成具有金属硅化物的半导体器件的方法
公开(公告)号：US20130316535A1
公开(公告)日：2013-11-28
申请号：US13788599
申请日：2013-03-07
申请人： Chung-Hwan Shin , Sang-Bom Kang , Dae-Yong Kim , Jeong-Ik Kim , Chul-Sung Kim , Je-Hyung Ryu , Sang-Woo Lee , Hyo-Seok Choi
发明人： Chung-Hwan Shin , Sang-Bom Kang , Dae-Yong Kim , Jeong-Ik Kim , Chul-Sung Kim , Je-Hyung Ryu , Sang-Woo Lee , Hyo-Seok Choi
IPC分类号： H01L21/28
CPC分类号： H01L29/7839 , H01L21/26506 , H01L21/28 , H01L21/28518 , H01L21/28537 , H01L21/76814 , H01L23/485 , H01L27/092 , H01L29/0847 , H01L29/1608 , H01L29/161 , H01L29/165 , H01L29/401 , H01L29/665 , H01L29/66636 , H01L29/66643 , H01L29/78 , H01L29/7848 , H01L2924/0002 , H01L2924/00
摘要： A method of forming a semiconductor device can be provided by forming an opening that exposes a surface of an elevated source/drain region. The size of the opening can be reduced and a pre-amorphization implant (PAI) can be performed into the elevated source/drain region, through the opening, to form an amorphized portion of the elevated source/drain region. A metal-silicide can be formed from a metal and the amorphized portion.
摘要翻译：可以通过形成露出升高的源极/漏极区域的表面的开口来提供形成半导体器件的方法。可以减小开口的尺寸，并且可以通过开口将升高的源极/漏极区域（PAI）进行预非晶化植入（PAI），以形成升高的源极/漏极区域的非晶化部分。金属硅化物可以由金属和非晶化部分形成。

5. 发明申请

US20120171826A1 METHOD OF FABRICATING SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20120171826A1
公开(公告)日：2012-07-05
申请号：US13243147
申请日：2011-09-23
申请人： Jin-Bum Kim , Chul-Sung Kim , Yu-Gyun Shin , Dae-Yong Kim , Joon-Gon Lee , Kwang-Young Lee
发明人： Jin-Bum Kim , Chul-Sung Kim , Yu-Gyun Shin , Dae-Yong Kim , Joon-Gon Lee , Kwang-Young Lee
IPC分类号： H01L21/8238
CPC分类号： H01L21/823807 , H01L21/823814
摘要： A method of fabricating a semiconductor includes providing a substrate having a first region and a second region defined therein, forming a first gate and a first source and drain region in the first region and forming a second gate and a second source and drain region in the second region, forming an epitaxial layer in the second source and drain region, forming a first metal silicide layer in the first source and drain region, forming an interlayer dielectric layer on the first region and the second region, forming a plurality of contact holes exposing the first metal silicide layer and the epitaxial layer while penetrating the interlayer dielectric layer, forming a second metal silicide layer in the exposed epitaxial layer, and forming a plurality of contacts contacting the first and second metal silicide layers by filling the plurality of contact holes.
摘要翻译：制造半导体的方法包括提供具有限定在其中的第一区域和第二区域的衬底，在第一区域中形成第一栅极和第一源极和漏极区域，并在第一区域中形成第二栅极和第二源极和漏极区域在所述第二源极和漏极区域中形成外延层，在所述第一源极和漏极区域中形成第一金属硅化物层，在所述第一区域和所述第二区域上形成层间电介质层，形成多个接触孔，第一金属硅化物层和外延层，同时穿透层间电介质层，在暴露的外延层中形成第二金属硅化物层，并且通过填充多个接触孔形成与第一和第二金属硅化物层接触的多个触点。

6. 发明申请

US20110045647A1 METHODS OF FORMING NON-VOLATILE MEMORY DEVICES 有权
标题翻译：形成非易失性存储器件的方法
公开(公告)号：US20110045647A1
公开(公告)日：2011-02-24
申请号：US12916718
申请日：2010-11-01
申请人： Jin-Hwa Heo , Chul-Sung Kim , Bon-Young Koo , Ki-Hyun Hwang , Chang-Hyun Lee
发明人： Jin-Hwa Heo , Chul-Sung Kim , Bon-Young Koo , Ki-Hyun Hwang , Chang-Hyun Lee
IPC分类号： H01L21/336
CPC分类号： H01L29/792 , H01L21/28202 , H01L21/28282 , H01L29/4234 , H01L29/513 , H01L29/518
摘要： A non-volatile memory device includes a dielectric layer between a charge storage layer and a substrate. Free bonds of the dielectric layer can be reduced to reduce/prevent charges from leaking through the free bonds and/or from being trapped by the free bonds. As a result, data retention properties and/or durability of a non-volatile memory device may be enhanced.
摘要翻译：非易失性存储器件包括电荷存储层和衬底之间的电介质层。可以减少电介质层的自由键，以减少/防止电荷通过游离键泄漏和/或被游离键捕获。结果，可以增强非挥发性存储器件的数据保持性能和/或耐久性。

7. 发明授权

US07338867B2 Semiconductor device having contact pads and method for manufacturing the same 失效
标题翻译：具有接触垫的半导体器件及其制造方法
公开(公告)号：US07338867B2
公开(公告)日：2008-03-04
申请号：US10747925
申请日：2003-12-30
申请人： Deok-Hyung Lee , Si-Young Choi , Byeong-Chan Lee , Chul-Sung Kim , In-Soo Jung , Jong-Ryeol Yoo
发明人： Deok-Hyung Lee , Si-Young Choi , Byeong-Chan Lee , Chul-Sung Kim , In-Soo Jung , Jong-Ryeol Yoo
IPC分类号： H01L21/336 , H01L21/4763
CPC分类号： H01L27/10888 , H01L21/28525 , H01L21/76829 , H01L21/76832 , H01L21/76895 , H01L23/485 , H01L27/10894 , H01L2924/0002 , Y10S257/90 , H01L2924/00
摘要： Semiconductor devices have gate structures on a semiconductor substrate with first spacers on sidewalls of the respective gate structures. First contact pads are positioned between the gate structures and have heights lower than the heights of the gate structures. Second spacers are disposed on sidewalls of the first spacers and on exposed sidewalls of the first contact pads. Second contact pads are disposed on the first contact pads.
摘要翻译：半导体器件在半导体衬底上具有栅极结构，在相应栅极结构的侧壁上具有第一间隔物。第一接触垫位于栅极结构之间并且具有低于栅极结构的高度的高度。第二间隔件设置在第一间隔件的侧壁和第一接触垫的暴露的侧壁上。第二接触垫设置在第一接触垫上。

8. 发明申请

US20070257324A1 Semiconductor Devices Having Gate Structures and Contact Pads that are Lower than the Gate Structures 失效
标题翻译：具有栅极结构和低于栅极结构的接触焊盘的半导体器件
公开(公告)号：US20070257324A1
公开(公告)日：2007-11-08
申请号：US11779477
申请日：2007-07-18
申请人： Deok-Hyung Lee , Si-Young Choi , Byeong-Chan Lee , Chul-Sung Kim , In-Soo Jung , Jong-Ryeol Yoo
发明人： Deok-Hyung Lee , Si-Young Choi , Byeong-Chan Lee , Chul-Sung Kim , In-Soo Jung , Jong-Ryeol Yoo
IPC分类号： H01L27/088
CPC分类号： H01L27/10888 , H01L21/28525 , H01L21/76829 , H01L21/76832 , H01L21/76895 , H01L23/485 , H01L27/10894 , H01L2924/0002 , Y10S257/90 , H01L2924/00
摘要： Semiconductor devices have gate structures on a semiconductor substrate with first spacers on sidewalls of the respective gate structures. First contact pads are positioned between the gate structures and have heights lower than the heights of the gate structures. Second spacers are disposed on sidewalls of the first spacers and on exposed sidewalls of the first contact pads. Second contact pads are disposed on the first contact pads.
摘要翻译：半导体器件在半导体衬底上具有栅极结构，在相应栅极结构的侧壁上具有第一间隔物。第一接触垫位于栅极结构之间并且具有低于栅极结构的高度的高度。第二间隔件设置在第一间隔件的侧壁和第一接触垫的暴露的侧壁上。第二接触垫设置在第一接触垫上。

9. 发明申请

US20070167030A1 Method of forming an insulation structure and method of manufacturing a semiconductor device using the same 有权
标题翻译：绝缘结构的形成方法及其制造方法
公开(公告)号：US20070167030A1
公开(公告)日：2007-07-19
申请号：US11639164
申请日：2006-12-15
申请人： Jung-Geun Jee , Young-Jin Noh , Bon-Young Koo , Chul-Sung Kim , Hun-Hyeoung Leam , Woong Lee
发明人： Jung-Geun Jee , Young-Jin Noh , Bon-Young Koo , Chul-Sung Kim , Hun-Hyeoung Leam , Woong Lee
IPC分类号： H01L21/31
CPC分类号： H01L21/3144 , H01L21/0217 , H01L21/022 , H01L21/02238 , H01L21/02252 , H01L21/02255 , H01L21/02332 , H01L21/02337 , H01L21/0234 , H01L21/31662 , H01L27/115 , H01L27/11521
摘要： In a method of forming an insulation structure, at least one oxide layer is formed on an object by at least one oxidation process, and then at least one nitride layer is formed from the oxide layer by at least one nitration process. An edge portion of the insulation structure may have a thickness substantially the same as that of a central portion of the insulation structure so that the insulation structure may have a uniform thickness and improved insulation characteristics. When the insulation structure is employed as a tunnel insulation layer of a semiconductor device, the semiconductor device may have enhanced endurance and improved electrical characteristics because a threshold voltage distribution of cells in the semiconductor device may become uniform.
摘要翻译：在形成绝缘结构的方法中，通过至少一个氧化工艺在物体上形成至少一个氧化物层，然后通过至少一个硝化工艺从氧化物层形成至少一个氮化物层。绝缘结构的边缘部分可以具有与绝缘结构的中心部分的厚度基本相同的厚度，使得绝缘结构可以具有均匀的厚度和改善的绝缘特性。当采用绝缘结构作为半导体器件的隧道绝缘层时，由于半导体器件中的单元的阈值电压分布可能变得均匀，所以半导体器件可以具有增强的耐久性和改善的电特性。

10. 发明申请

US20050285162A1 Semiconductor devices having a stacked structure and methods of forming the same 审中-公开
标题翻译：具有堆叠结构的半导体器件及其形成方法
公开(公告)号：US20050285162A1
公开(公告)日：2005-12-29
申请号：US11159596
申请日：2005-06-23
申请人： Chul-Sung Kim , Jin-Hwa Heo , Yu-Gyun Shin , Bon-Young Koo , Dong-Chan Kim , Jeong-Do Ryu
发明人： Chul-Sung Kim , Jin-Hwa Heo , Yu-Gyun Shin , Bon-Young Koo , Dong-Chan Kim , Jeong-Do Ryu
IPC分类号： H01L21/8244 , H01L21/336 , H01L21/822 , H01L21/8234 , H01L27/06 , H01L29/78
CPC分类号： H01L27/0688 , H01L21/8221
摘要： Methods of forming a semiconductor device having stacked structures include forming a first semiconductor structure on a substrate and forming a first interlayer insulating layer on the substrate. The first interlayer insulating layer has a substantially level upper face. A semiconductor layer is formed on the first interlayer insulating layer and a first gate insulation layer is formed on the semiconductor layer at a processing temperature selected to control damage to the first semiconductor structure. A second semiconductor structure is formed on the first gate insulation layer.
摘要翻译：形成具有堆叠结构的半导体器件的方法包括在衬底上形成第一半导体结构并在衬底上形成第一层间绝缘层。第一层间绝缘层具有基本上平坦的上表面。在第一层间绝缘层上形成半导体层，在半导体层上形成第一栅极绝缘层，该处理温度被选择为控制第一半导体结构的损坏。在第一栅绝缘层上形成第二半导体结构。

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