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1. 发明授权

US09026418B2 Method for determining distinct alternative paths between two object sets in 2-D and 3-D heterogeneous data 有权
标题翻译：用于确定2-D和3-D异构数据中两个对象集之间的不同备选路径的方法
公开(公告)号：US09026418B2
公开(公告)日：2015-05-05
申请号：US12747778
申请日：2009-01-21
申请人： Chul-Sung Kim , Mark Dobin
发明人： Chul-Sung Kim , Mark Dobin
IPC分类号： G06G7/50 , G06G7/48 , G01V99/00
CPC分类号： G01V99/00 , G01V1/302 , G01V99/005 , G01V2210/641 , G01V2210/644
摘要： Distinct paths (40), e.g., locally optimal, are determined in a heterogeneous velocity field (32) between a source object and a target object (33) using gradients (35) of a two-way total arrival time field (34). The foregoing technique may be used to assess hydrocarbon reservoir connectivity.
摘要翻译：使用双向总到达时间字段（34）的梯度（35）在源对象和目标对象（33）之间的异质速度场（32）中确定不同路径（40），例如局部最佳。上述技术可用于评估烃储层连通性。

2. 发明授权

US07330791B2 Method for rapid fault interpretation of fault surfaces generated to fit three-dimensional seismic discontinuity data 有权
标题翻译：用于快速故障解释的方法，用于生成适合三维地震不连续数据的故障表面
公开(公告)号：US07330791B2
公开(公告)日：2008-02-12
申请号：US10527415
申请日：2003-09-17
申请人： Chul-Sung Kim , Dominique G. Gillard , James E. Holl , Mark Dobin , Thomas A. Hauge
发明人： Chul-Sung Kim , Dominique G. Gillard , James E. Holl , Mark Dobin , Thomas A. Hauge
IPC分类号： G01V1/30 , G01V1/28
CPC分类号： G01V1/32 , G01V1/301 , G01V2210/641
摘要： A method to extract fault surfaces from seismic data (1,3) is disclosed. The method comprises: (a) generating at least two fault sticks (5) from the same fault from at least two slices of the seismic data wherein each slice comprises at least one fault stick from the same fault, (b) constructing an initial three-dimensional fault surface (7) containing the fault sticks, and (c) reconstructing the initial fault surface (9) using a deformable surface model to fit discontinuity or coherency information in the seismic data in an iterative process. Techniques are disclosed for constructing the initial fault surface from interpreter-provided fault nodes, and for performing the deformable surface iteration by defining an energy function for the fault surface and then minimizing the surface energy.
摘要翻译：公开了一种从地震数据中提取断层面的方法（1,3）。该方法包括：（a）从地震数据的至少两个切片产生来自相同故障的至少两个断层（5），其中每个切片包括来自相同故障的至少一个断层，（b）构建初始三维包含断层的三维断层面（7），（c）使用可变形表面模型重建初始断层面（9），以在迭代过程中对地震数据中的不连续性或一致性信息进行拟合。公开了用于从解释器提供的故障节点构建初始故障表面的技术，并且通过为故障表面定义能量函数然后使表面能最小化来执行可变形表面迭代。

3. 发明申请

US20100270027A1 Method For Determining Distinct Alternative Paths Between Two Object Sets In 2-D and 3-D Heterogeneous Data 审中-公开
标题翻译：用于确定2-D和3-D异构数据中两个对象集之间的不同替代路径的方法
公开(公告)号：US20100270027A1
公开(公告)日：2010-10-28
申请号：US12747778
申请日：2009-01-21
申请人： Chul-Sung Kim , Mark Dobin
发明人： Chul-Sung Kim , Mark Dobin
IPC分类号： E21B43/00 , G06G7/48
CPC分类号： G01V99/00 , G01V1/302 , G01V99/005 , G01V2210/641 , G01V2210/644
摘要： Distinct paths (40), e.g., locally optimal, are determined in a heterogeneous velocity field (32) between a source object and a target object (33) using gradients (35) of a two-way total arrival time field (34). The foregoing technique may be used to assess hydrocarbon reservoir connectivity.
摘要翻译：使用双向总到达时间字段（34）的梯度（35）在源对象和目标对象（33）之间的异质速度场（32）中确定不同路径（40），例如局部最佳。上述技术可用于评估烃储层连通性。

4. 发明授权

US07565243B2 Rapid method for reservoir connectivity analysis using a fast marching method 有权
标题翻译：使用快速行进方法进行油藏连通分析的快速方法
公开(公告)号：US07565243B2
公开(公告)日：2009-07-21
申请号：US11884695
申请日：2006-04-10
申请人： Chul-Sung Kim , Mark Dobin
发明人： Chul-Sung Kim , Mark Dobin
IPC分类号： G06F3/00
CPC分类号： G01V99/005 , E21B43/00 , G01V1/302 , G01V2210/641 , G01V2210/644
摘要： Methods for analyzing the connected quality of a hydrocarbon reservoir are disclosed. A model of a portion of the reservoir is divided into cells, each cell having a volume and some attributes, and wherein a speed function is assigned to a portion of the cells. A reference cell is chosen. A connectivity between cells in the reservoir is determined by solving an Eikonal equation that describes the travel time propagation, said propagating front progressing outward from a reference cell until an ending condition is met, said Eikonal equation being solved by a fast marching method with propagation velocity as a function of spatial position being provided by the speed function. Regions of the reservoir are characterized by their connective quality to the reference cell using the connectivity.
摘要翻译：公开了分析烃储层连通质量的方法。储存器的一部分的模型被分成单元，每个单元具有一个体积和一些属性，并且其中一个速度函数被分配给该单元的一部分。选择参考单元。通过解决描述旅行时间传播的Eikonal方程来确定储层中的细胞之间的连通性，所述传播前沿从参考细胞向外进展直到满足结束条件，所述Eikonal方程通过具有传播速度的快速行进方法作为由速度函数提供的空间位置的函数。水库的区域的特点是使用连接性与参考单元的连接质量。

5. 发明申请

US20080154505A1 Rapid Method for Reservoir Connectivity Analysis Using a Fast Marching Method 有权
标题翻译：使用快速前进法进行油藏连通性分析的快速方法
公开(公告)号：US20080154505A1
公开(公告)日：2008-06-26
申请号：US11884695
申请日：2006-04-10
申请人： Chul-Sung Kim , Mark Dobin
发明人： Chul-Sung Kim , Mark Dobin
IPC分类号： G01V1/30
CPC分类号： G01V99/005 , E21B43/00 , G01V1/302 , G01V2210/641 , G01V2210/644
摘要： Methods for analyzing the connected quality of a hydrocarbon reservoir are disclosed. A model of a portion of the reservoir is divided into cells, each cell having a volume and some attributes, and wherein a speed function is assigned to a portion of the cells. A reference cell is chosen. A connectivity between cells in the reservoir is determined by solving an Eikonal equation that describes the travel time propagation, said propagating front progressing outward from a reference cell until an ending condition is met, said Eikonal equation being solved by a fast marching method with propagation velocity as a function of spatial position being provided by the speed function. Regions of the reservoir are characterized by their connective quality to the reference cell using the connectivity.
摘要翻译：公开了分析烃储层连通质量的方法。储存器的一部分的模型被分成单元，每个单元具有一个体积和一些属性，并且其中一个速度函数被分配给该单元的一部分。选择参考单元。通过解决描述旅行时间传播的Eikonal方程来确定储层中的细胞之间的连通性，所述传播前沿从参考细胞向外进展直到满足结束条件，所述Eikonal方程通过具有传播速度的快速行进方法作为由速度函数提供的空间位置的函数。水库的区域的特点是使用连接性与参考单元的连接质量。

6. 发明授权

US09022129B2 Tracking geologic object and detecting geologic anomalies in exploration seismic data volume 有权
标题翻译：勘探地震数据量跟踪地质物体和地质异常检测
公开(公告)号：US09022129B2
公开(公告)日：2015-05-05
申请号：US13059780
申请日：2009-07-02
申请人： Mark W. Dobin , Chul-Sung Kim , Ross Whitaker
发明人： Mark W. Dobin , Chul-Sung Kim , Ross Whitaker
IPC分类号： G01V1/30
CPC分类号： G01V1/301 , G06T7/11 , G06T7/269 , G06T7/30 , G06T2200/04 , G06T2207/20096
摘要： A method and system are described for identifying a geologic object through cross sections of a geologic data volume. The method includes obtaining a geologic data volume having a set of cross sections. Then, two or more cross sections are selected and a transformation vector is estimated between the cross sections. Based on the transformation vector, a geologic object is identified within the geologic data volume.
摘要翻译：描述了通过地质数据量的横截面识别地质物体的方法和系统。该方法包括获得具有一组横截面的地质数据体积。然后，选择两个或更多个横截面，并且在横截面之间估计变换矢量。基于变换向量，在地质数据量中识别出地质对象。

7. 发明申请

US20130316535A1 METHODS OF FORMING SEMICONDUCTOR DEVICES WITH METAL SILICIDE USING PRE-AMORPHIZATION IMPLANTS AND DEVICES SO FORMED 有权
标题翻译：使用预成型植入物和形成的器件形成具有金属硅化物的半导体器件的方法
公开(公告)号：US20130316535A1
公开(公告)日：2013-11-28
申请号：US13788599
申请日：2013-03-07
申请人： Chung-Hwan Shin , Sang-Bom Kang , Dae-Yong Kim , Jeong-Ik Kim , Chul-Sung Kim , Je-Hyung Ryu , Sang-Woo Lee , Hyo-Seok Choi
发明人： Chung-Hwan Shin , Sang-Bom Kang , Dae-Yong Kim , Jeong-Ik Kim , Chul-Sung Kim , Je-Hyung Ryu , Sang-Woo Lee , Hyo-Seok Choi
IPC分类号： H01L21/28
CPC分类号： H01L29/7839 , H01L21/26506 , H01L21/28 , H01L21/28518 , H01L21/28537 , H01L21/76814 , H01L23/485 , H01L27/092 , H01L29/0847 , H01L29/1608 , H01L29/161 , H01L29/165 , H01L29/401 , H01L29/665 , H01L29/66636 , H01L29/66643 , H01L29/78 , H01L29/7848 , H01L2924/0002 , H01L2924/00
摘要： A method of forming a semiconductor device can be provided by forming an opening that exposes a surface of an elevated source/drain region. The size of the opening can be reduced and a pre-amorphization implant (PAI) can be performed into the elevated source/drain region, through the opening, to form an amorphized portion of the elevated source/drain region. A metal-silicide can be formed from a metal and the amorphized portion.
摘要翻译：可以通过形成露出升高的源极/漏极区域的表面的开口来提供形成半导体器件的方法。可以减小开口的尺寸，并且可以通过开口将升高的源极/漏极区域（PAI）进行预非晶化植入（PAI），以形成升高的源极/漏极区域的非晶化部分。金属硅化物可以由金属和非晶化部分形成。

8. 发明申请

US20120171826A1 METHOD OF FABRICATING SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20120171826A1
公开(公告)日：2012-07-05
申请号：US13243147
申请日：2011-09-23
申请人： Jin-Bum Kim , Chul-Sung Kim , Yu-Gyun Shin , Dae-Yong Kim , Joon-Gon Lee , Kwang-Young Lee
发明人： Jin-Bum Kim , Chul-Sung Kim , Yu-Gyun Shin , Dae-Yong Kim , Joon-Gon Lee , Kwang-Young Lee
IPC分类号： H01L21/8238
CPC分类号： H01L21/823807 , H01L21/823814
摘要： A method of fabricating a semiconductor includes providing a substrate having a first region and a second region defined therein, forming a first gate and a first source and drain region in the first region and forming a second gate and a second source and drain region in the second region, forming an epitaxial layer in the second source and drain region, forming a first metal silicide layer in the first source and drain region, forming an interlayer dielectric layer on the first region and the second region, forming a plurality of contact holes exposing the first metal silicide layer and the epitaxial layer while penetrating the interlayer dielectric layer, forming a second metal silicide layer in the exposed epitaxial layer, and forming a plurality of contacts contacting the first and second metal silicide layers by filling the plurality of contact holes.
摘要翻译：制造半导体的方法包括提供具有限定在其中的第一区域和第二区域的衬底，在第一区域中形成第一栅极和第一源极和漏极区域，并在第一区域中形成第二栅极和第二源极和漏极区域在所述第二源极和漏极区域中形成外延层，在所述第一源极和漏极区域中形成第一金属硅化物层，在所述第一区域和所述第二区域上形成层间电介质层，形成多个接触孔，第一金属硅化物层和外延层，同时穿透层间电介质层，在暴露的外延层中形成第二金属硅化物层，并且通过填充多个接触孔形成与第一和第二金属硅化物层接触的多个触点。

9. 发明申请

US20110045647A1 METHODS OF FORMING NON-VOLATILE MEMORY DEVICES 有权
标题翻译：形成非易失性存储器件的方法
公开(公告)号：US20110045647A1
公开(公告)日：2011-02-24
申请号：US12916718
申请日：2010-11-01
申请人： Jin-Hwa Heo , Chul-Sung Kim , Bon-Young Koo , Ki-Hyun Hwang , Chang-Hyun Lee
发明人： Jin-Hwa Heo , Chul-Sung Kim , Bon-Young Koo , Ki-Hyun Hwang , Chang-Hyun Lee
IPC分类号： H01L21/336
CPC分类号： H01L29/792 , H01L21/28202 , H01L21/28282 , H01L29/4234 , H01L29/513 , H01L29/518
摘要： A non-volatile memory device includes a dielectric layer between a charge storage layer and a substrate. Free bonds of the dielectric layer can be reduced to reduce/prevent charges from leaking through the free bonds and/or from being trapped by the free bonds. As a result, data retention properties and/or durability of a non-volatile memory device may be enhanced.
摘要翻译：非易失性存储器件包括电荷存储层和衬底之间的电介质层。可以减少电介质层的自由键，以减少/防止电荷通过游离键泄漏和/或被游离键捕获。结果，可以增强非挥发性存储器件的数据保持性能和/或耐久性。

10. 发明授权

US07338867B2 Semiconductor device having contact pads and method for manufacturing the same 失效
标题翻译：具有接触垫的半导体器件及其制造方法
公开(公告)号：US07338867B2
公开(公告)日：2008-03-04
申请号：US10747925
申请日：2003-12-30
申请人： Deok-Hyung Lee , Si-Young Choi , Byeong-Chan Lee , Chul-Sung Kim , In-Soo Jung , Jong-Ryeol Yoo
发明人： Deok-Hyung Lee , Si-Young Choi , Byeong-Chan Lee , Chul-Sung Kim , In-Soo Jung , Jong-Ryeol Yoo
IPC分类号： H01L21/336 , H01L21/4763
CPC分类号： H01L27/10888 , H01L21/28525 , H01L21/76829 , H01L21/76832 , H01L21/76895 , H01L23/485 , H01L27/10894 , H01L2924/0002 , Y10S257/90 , H01L2924/00
摘要： Semiconductor devices have gate structures on a semiconductor substrate with first spacers on sidewalls of the respective gate structures. First contact pads are positioned between the gate structures and have heights lower than the heights of the gate structures. Second spacers are disposed on sidewalls of the first spacers and on exposed sidewalls of the first contact pads. Second contact pads are disposed on the first contact pads.
摘要翻译：半导体器件在半导体衬底上具有栅极结构，在相应栅极结构的侧壁上具有第一间隔物。第一接触垫位于栅极结构之间并且具有低于栅极结构的高度的高度。第二间隔件设置在第一间隔件的侧壁和第一接触垫的暴露的侧壁上。第二接触垫设置在第一接触垫上。

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