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1. 发明申请

US20050171258A1 Method for preparing cyclic olefin polymer having high bulk density and cyclic olefin polymer prepared thereby 有权
标题翻译：制备具有高堆积密度的环烯烃聚合物的方法和由此制备的环烯烃聚合物
公开(公告)号：US20050171258A1
公开(公告)日：2005-08-04
申请号：US11050833
申请日：2005-01-27
申请人： Chul-Hwan Choi , Sung-Yeon Kim , Jung-Uk Choi
发明人： Chul-Hwan Choi , Sung-Yeon Kim , Jung-Uk Choi
IPC分类号： C08F32/08 , C08F6/12 , C08F32/00 , C08F232/08 , C08L1/00
CPC分类号： C08F232/08
摘要： A method for preparing a cyclic olefin polymer is described. The method includes polymerizing cyclic olefin monomers or a cyclic olefin monomer with ethylene to prepare a cyclic olefin polymer solution; slowly adding a non-solvent drop wise to the cyclic olefin polymer solution to precipitate a cyclic olefin polymer; and filtering and drying the precipitated cyclic olefin polymer. In addition, the cyclic olefin polymer prepared using this method is described. According to the present invention, a spherical cyclic olefin polymer having a high bulk density can be easily separated from the cyclic olefin polymer solution by precipitation.
摘要翻译：描述了制备环烯烃聚合物的方法。该方法包括使环烯烃单体或环烯烃单体与乙烯聚合以制备环烯烃聚合物溶液; 缓慢地向环状烯烃聚合物溶液中滴加非溶剂以沉淀环烯烃聚合物; 并过滤并干燥沉淀的环烯烃聚合物。此外，描述了使用该方法制备的环烯烃聚合物。根据本发明，通过沉淀可以容易地从环烯烃聚合物溶液中分离出具有高堆积密度的球形环烯烃聚合物。

2. 发明授权

US07202312B2 Method for preparing cyclic olefin polymer having high bulk density and cyclic olefin polymer prepared thereby 有权
标题翻译：制备具有高堆积密度的环烯烃聚合物的方法和由此制备的环烯烃聚合物
公开(公告)号：US07202312B2
公开(公告)日：2007-04-10
申请号：US11050833
申请日：2005-01-27
申请人： Chul-Hwan Choi , Sung-Yeon Kim , Jung-Uk Choi
发明人： Chul-Hwan Choi , Sung-Yeon Kim , Jung-Uk Choi
IPC分类号： C08F132/00
CPC分类号： C08F232/08
摘要： A method for preparing a cyclic olefin polymer is described. The method includes polymerizing cyclic olefin monomers or a cyclic olefin monomer with ethylene to prepare a cyclic olefin polymer solution; slowly adding a non-solvent drop wise to the cyclic olefin polymer solution to precipitate a cyclic olefin polymer; and filtering and drying the precipitated cyclic olefin polymer. In addition, the cyclic olefin polymer prepared using this method is described. According to the present invention, a spherical cyclic olefin polymer having a high bulk density can be easily separated from the cyclic olefin polymer solution by precipitation.
摘要翻译：描述了制备环烯烃聚合物的方法。该方法包括使环烯烃单体或环烯烃单体与乙烯聚合以制备环烯烃聚合物溶液; 缓慢地向环状烯烃聚合物溶液中滴加非溶剂以沉淀环烯烃聚合物; 并过滤并干燥沉淀的环烯烃聚合物。此外，描述了使用该方法制备的环烯烃聚合物。根据本发明，通过沉淀可以容易地从环烯烃聚合物溶液中分离出具有高堆积密度的球形环烯烃聚合物。

3. 发明申请

US20070072489A1 Method of installing semiconductor device manufacturing equipment and mock-up for use in the method 审中-公开
标题翻译：安装半导体器件制造设备的方法和用于该方法的模型
公开(公告)号：US20070072489A1
公开(公告)日：2007-03-29
申请号：US11402822
申请日：2006-04-13
申请人： Kyung-Tae Kim , Jun-Woo Choi , Chul-Hwan Choi
发明人： Kyung-Tae Kim , Jun-Woo Choi , Chul-Hwan Choi
IPC分类号： H01R13/66
CPC分类号： H01R13/005 , H01L21/6719 , H01R4/56 , H01R4/66
摘要： Semiconductor device manufacturing equipment is installed using a mock-up of the equipment. First, a full-scale layout drawing of the equipment is prepared. Also, a mock-up of the equipment is fabricated. The mock-up has wiring and pipe connectors of the same type as those of the main equipment. The layout drawing is placed on the floor of the site at which the main equipment is to be installed. Then the mock-up is placed at the same location where the main equipment is to be installed, as represented in the layout drawing, with the wiring and pipe connectors of the mock-up located at the same positions where the wiring and pipe connectors of the main equipment will be located. The wiring and piping of the semiconductor manufacturing equipment is installed, and ends of the wiring and piping are connected to the wiring and pipe connectors of the mock-up. Then the wiring and piping are inspected. Subsequently, the mock-up is disassembled and removed, and the main equipment is set in place at the same location from which the mock-up was removed. Finally, the wiring and piping are connected with the wiring and pipe connectors of the main equipment. Thus, the semiconductor device manufacturing equipment can be quickly placed in operation once the main, apparatus of the equipment is procured.
摘要翻译：使用设备的模型安装半导体器件制造设备。首先，准备了设备的全尺寸布局图。此外，制造了设备的模型。该模型具有与主设备相同类型的接线和管接头。布置图放在主要设备安装地点的地板上。然后将模型放置在主要设备安装的相同位置，如布置图所示，模型的布线和管道连接器位于相同位置，其中布线和管道连接器主要设备将位于。安装半导体制造设备的布线和管道，将布线和管道的末端连接到模型的布线和管道连接器。然后检查接线和管道。随后，将模型拆卸拆卸，并将主设备放置在拆除模型的同一位置。最后，配线和管道与主设备的接线和管接头连接。因此，一旦采购了设备的主要设备，半导体器件制造设备就可以快速地投入运行。

4. 发明授权

US06451694B1 Control of abnormal growth in dichloro silane (DCS) based CVD polycide WSix films 有权
标题翻译：控制二氯硅烷（DCS）基CVD聚硅氧烷WSix膜的异常生长
公开(公告)号：US06451694B1
公开(公告)日：2002-09-17
申请号：US09826203
申请日：2001-04-04
申请人： Jeon-Sig Lim , Jin-Ho Jeon , Jong-Seung Yi , Chul-Hwan Choi
发明人： Jeon-Sig Lim , Jin-Ho Jeon , Jong-Seung Yi , Chul-Hwan Choi
IPC分类号： H01L2144
CPC分类号： H01L21/32053 , H01L21/28061 , H01L21/28556 , Y10S438/903
摘要： In a process for mitigating and/or eliminating the abnormal growth of underlying polysilicon in dichloro silane-based CVD polycide WSix films, a first technique conducts the deposition of the underlying polysilicon layer at a temperature that substantially avoids crystallization of the underlying polysilicon. A second approach reduces the exposure (for example time period and or concentration) of the mono-silane SiH4 post flush, so as to avoid infusion of silicon into the underlying polysilicon layer, and resulting abnormal growth. In this manner, abnormal effects, such as stress fractures formed in subsequent layers, can be eliminated.
摘要翻译：在用于减轻和/或消除二氯硅烷基CVD多硅化物WSix膜中底层多晶硅的异常生长的过程中，第一种技术在基本上避免下层多晶硅结晶的温度下进行下面的多晶硅层的沉积。第二种方法减少了冲洗后单硅烷SiH4的暴露（例如时间段和/或浓度），以避免将硅注入到下面的多晶硅层中，从而导致异常生长。以这种方式，可以消除诸如在后续层中形成的应力断裂等异常效应。

5. 发明申请

US20130025624A1 METHOD OF CLEANING A SEMICONDUCTOR DEVICE MANUFACTURING APPARATUS 审中-公开
标题翻译：清洁半导体器件制造设备的方法
公开(公告)号：US20130025624A1
公开(公告)日：2013-01-31
申请号：US13546645
申请日：2012-07-11
申请人： Jeon-Ho Kim , Chul-Hwan Choi , Seung-Tae Lee , Yong-Gyu Lim , Kyung-Tae Kim , Jae-Min Kim
发明人： Jeon-Ho Kim , Chul-Hwan Choi , Seung-Tae Lee , Yong-Gyu Lim , Kyung-Tae Kim , Jae-Min Kim
IPC分类号： B08B7/00
CPC分类号： C23C16/4405
摘要： According to example embodiments, there is provided a method of cleaning a semiconductor device manufacturing apparatus. In the method, a fluorine-containing gas is provided into a chamber to clean a byproduct formed on a surface of a chamber during formation of a layer structure therein. A material is provided into the chamber to chemisorb the material on the surface of the chamber. The material is substantially similar to or the same as a source gas for forming the layer structure. A plasma is generated in the chamber, and the chamber is purged.
摘要翻译：根据示例性实施例，提供了一种清洁半导体器件制造装置的方法。在该方法中，在室内形成层状结构时，在室内设置含氟气体，以清洗形成在室的表面上的副产物。将一种材料提供到腔室中以化学吸附腔室表面上的材料。该材料基本上与形成层结构的源气体相似或相同。在室中产生等离子体，并且室被清除。

6. 发明授权

US06838645B2 Heater assembly for manufacturing a semiconductor device 有权
标题翻译：用于制造半导体器件的加热器组件
公开(公告)号：US06838645B2
公开(公告)日：2005-01-04
申请号：US10267549
申请日：2002-10-08
申请人： Chul-Hwan Choi , Jin-Ho Jeon , Yong-Gab Kim , Sung-Hwan Jang , Dong-Won Lee , Min-Woo Lee , Kyung-Tae Kim
发明人： Chul-Hwan Choi , Jin-Ho Jeon , Yong-Gab Kim , Sung-Hwan Jang , Dong-Won Lee , Min-Woo Lee , Kyung-Tae Kim
IPC分类号： C23C16/46 , H01L21/00 , H01L21/02 , H01L21/205 , H01L21/68 , H05B3/68
CPC分类号： H01L21/6835 , H01L21/67103 , H01L2924/3025
摘要： A heater assembly that is capable of uniformly heating a wafer in an apparatus for manufacturing a semiconductor device is provided. The heater assembly preferably includes a susceptor configured to support a substrate (wafer). A plurality of heaters can be disposed under the susceptor to heat the wafer. A support is preferably disposed below the heaters to support the heaters, and a power supply provides an electric current to operate the heaters. The support can include a heat-shielding portion that restricts heat conduction between the heaters. The heat-shielding portion preferably comprises heat-resistant material arranged in a groove formed on the support. The heat-shielding portion also preferably supports adjacent peripheral portions of the heaters. Electrical current provided to the heaters is preferably controlled such that the temperature of the heaters are operated in a range of about 390° C. to 420° C. Alternatively, a single or multiple ring-shaped heaters having an internal radiating space can be provided below a peripheral portion of the susceptor to uniformly heat the wafer.

7. 发明授权

US06559316B2 Method for preparing 2-(2-hydroxyphenyl)-2H-benzotriazole 失效
标题翻译： 2-（2-羟基苯基）-2H-苯并三唑的制备方法
公开(公告)号：US06559316B2
公开(公告)日：2003-05-06
申请号：US10220736
申请日：2002-09-05
申请人： Jeong-Kyu Kim , Chul-Hwan Choi
发明人： Jeong-Kyu Kim , Chul-Hwan Choi
IPC分类号： C07D24920
CPC分类号： C07D249/20
摘要： This invention provides a method for preparing 2-(2-hydroxyphenyl)-2H-benzotriatzole of formula (I) below, consisting of steps of: a) performing a first reduction in which hydrazine hydrate is added to a compound of formula (II) below with or without a phase transition catalyst in the presence of solvents which include a nonpolar solvent, water, and an alkaline compound, thereby preparing a compound of formula (III) below; and b) performing a second reduction in which water is added to the compound of formula (III) prepared in step a), and then zinc powder and sulfuric acid are added thereto with or without the phase transition catalyst, wherein, X is halogen or hydrogen; R is hydrogen, C1-C12 alkyl, C5-C8 cycloalkyl, phenyl, or phelyl-C1-C4 alkyl; and R′ is C1-C12 alkyl, C5-C8 cycloalkyl, phenyl, or phenyl-C1-C4 alkyl.
摘要翻译：本发明提供一种制备下述式（I）的2-（2-羟基苯基）-2H-苯并三唑的方法，包括以下步骤：a）进行第一次还原，其中将水合肼加入式（II）化合物中，在包含非极性溶剂，水和碱性化合物的溶剂的存在下，使用或不使用相转移催化剂，从而制备下述式（III）的化合物; 和b）进行第二次还原，其中向步骤a）中制备的式（III）化合物中加入水，然后在有或没有相转移催化剂的情况下向其中加入锌粉和硫酸，其中X为卤素或氢; R是氢，C 1 -C 12烷基，C 5 -C 8环烷基，苯基或烯基-C 1 -C 4烷基; 和R'是C 1 -C 12烷基，C 5 -C 8环烷基，苯基或苯基-C 1 -C 4烷基。

8. 发明授权

US08535488B2 Method and apparatus for purification of trichlorosilane 有权
标题翻译：纯化三氯硅烷的方法和装置
公开(公告)号：US08535488B2
公开(公告)日：2013-09-17
申请号：US13324869
申请日：2011-12-13
申请人： Chul-Hwan Choi , Jeong-Seok Lee , Kwang-Wook Choi , Joon-Ho Shin , Dong-Kyu Kim
发明人： Chul-Hwan Choi , Jeong-Seok Lee , Kwang-Wook Choi , Joon-Ho Shin , Dong-Kyu Kim
IPC分类号： B01D3/00 , C01B33/107
CPC分类号： C01B33/10778 , B01D3/143
摘要： There is provided a method for a purification of trichlorosilane, the method including: performing a pretreatment for separating a chlorosilane mixture from reaction products of a trichlorosilane production reaction; performing a first purification for separating the chlorosilane mixture into a first top stream and a first bottom stream; performing a second purification for separating the first top stream into a second top stream and a second bottom stream; and performing a third purification for separating the second bottom stream into a third top stream and a third bottom stream, wherein the performing of the third purification is carried out under pressure conditions higher than those of the performing of the second purification, and a heat exchange is generated between the second bottom stream and the third top stream.
摘要翻译：提供了三氯硅烷的纯化方法，该方法包括：进行氯三硅烷混合物与三氯硅烷生产反应的反应产物的分离的预处理; 执行用于将氯硅烷混合物分离成第一顶部流和第一底部流的第一纯化; 执行用于将第一顶部流分离成第二顶部流和第二底部流的第二纯化; 以及进行用于将所述第二底部流分离成第三顶部流和第三底部流的第三纯化，其中所述第三纯化的进行在高于进行所述第二纯化的压力条件下进行，并且进行热交换在第二底部流和第三顶部流之间产生。

9. 发明申请

US20070193573A1 Vacuum system of semiconductor device manufacturing equipment 审中-公开
标题翻译：半导体器件制造设备的真空系统
公开(公告)号：US20070193573A1
公开(公告)日：2007-08-23
申请号：US11542108
申请日：2006-10-04
申请人： Kyung-Tae Kim , Chul-Hwan Choi , Kyung-Tae Kim , Jun-Woo Choi
发明人： Kyung-Tae Kim , Chul-Hwan Choi , Kyung-Tae Kim , Jun-Woo Choi
IPC分类号： F24J1/00 , F24J3/00
CPC分类号： C23C16/4412 , C23C14/564 , F16K1/22 , H01L21/67017
摘要： Semiconductor device manufacturing equipment has a vacuum system that enhances the fluency of the gas being discharged from a chamber of the equipment. The vacuum system has a vent line, and a throttle valve that includes a vent line opening and closing member oriented so that it is readily opened by a concentrated flow of gas in the vent line. The vacuum system may include a heating unit that heats the vent line through which the gas passes. Still further, a bend in the vent line upstream of the vent line opening and closing member may have a gently curved shape and/or may subtend an angle of less than 90°. As a result, the efficiency of the ventilation of the process chamber is improved, making it easier to control the pressure of the process chamber and minimizing the contamination of the throttle valve and the vent line.
摘要翻译：半导体器件制造设备具有提高从设备的室排出的气体的流畅性的真空系统。真空系统具有排气管线和节流阀，该节流阀包括排气管路开闭部件，其定向成容易通过排气管线中的浓缩的气流打开。真空系统可以包括加热单元，加热气体通过的排放管线。此外，通气线打开和关闭部件上游的通气线的弯曲部可以具有轻微弯曲的形状和/或可以对着小于90°的角度。结果，提高了处理室的通风效率，使得更容易控制处理室的压力并最小化节流阀和排气管线的污染。

10. 发明授权

US06858062B2 Residual gas removing device and method thereof 有权
标题翻译：残余气体去除装置及其方法
公开(公告)号：US06858062B2
公开(公告)日：2005-02-22
申请号：US10046282
申请日：2002-01-16
申请人： Chul-Hwan Choi , Jin-Ho Jeon , Yong-Gab Kim , Jong-Seung Yi , Min-Woo Lee , Kyung-Tae Kim , Chan-Hyung Cho
发明人： Chul-Hwan Choi , Jin-Ho Jeon , Yong-Gab Kim , Jong-Seung Yi , Min-Woo Lee , Kyung-Tae Kim , Chan-Hyung Cho
IPC分类号： H01L21/02 , C23C16/42 , C23C16/44 , F17D1/04 , B01D53/04
CPC分类号： C23C16/4408 , C23C16/42 , C23C16/45561 , F17D1/04
摘要： A residual gas removing device for a gas supply apparatus in a semiconductor fabricating facility, includes a low stress valve disposed between a mass flow controller and a chamber. The low stress valve alternately supplies or cuts off a gas from the mass flow controller to the chamber. A WF6 gas removing apparatus is in flow communication with a gas inlet line of the low stress valve to remove a residual WF6 gas in the gas inlet line, before proceeding with a subsequent deposition step.
摘要翻译：一种用于半导体制造设备中的气体供应装置的残余气体去除装置，包括设置在质量流量控制器和室之间的低应力阀。低应力阀交替地将气体从质量流量控制器提供或切断到腔室。在进行后续沉积步骤之前，WF6气体去除装置与低应力阀的气体入口管线流动连通，以除去气体入口管线中的残余WF 6气体。

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