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1. 发明申请

US20050072991A1 Method of manufacturing insulating layer and semiconductor device including insulating layer, and semiconductor device formed thereby 有权
标题翻译：制造绝缘层的方法和包括绝缘层的半导体器件以及由此形成的半导体器件
公开(公告)号：US20050072991A1
公开(公告)日：2005-04-07
申请号：US10673937
申请日：2003-09-30
申请人： Woo-Chan Jung , Jin-Ho Jeon , Jeon-Sig Lim , Jong-Seung Yi
发明人： Woo-Chan Jung , Jin-Ho Jeon , Jeon-Sig Lim , Jong-Seung Yi
IPC分类号： C23C16/40 , C23C16/56 , H01L21/316 , H01L29/76
CPC分类号： H01L21/02129 , C23C16/401 , C23C16/56 , H01L21/02271 , H01L21/02304 , H01L21/02337 , H01L21/31625
摘要： A method of manufacturing an insulating layer that ensures reproducibility across like manufacturing apparatus. The insulating layer is formed on the substrate by (a) flowing an oxidizing gas at an oxidizing gas flow rate, (b) flowing a first carrier gas at a first carrier gas flow rate while carrying a first impurity including boron flowing at a first impurity flow rate, (c) flowing a second carrier gas at a second carrier gas flow rate while carrying a second impurity including phosphorus flowing at a second impurity flow rate, and (d) flowing a silicon source material at a silicon source flow rate. The second carrier gas flow rate is greater than the first carrier gas flow rate.
摘要翻译：一种制造绝缘层的方法，其确保在同一制造装置上的再现性。通过（a）以氧化气体流量使氧化气体流动，（b）使第一载气以第一载气流量流动，同时携带包含以第一杂质流动的硼的第一杂质，形成绝缘层流速，（c）以第二载气流量流动第二载气，同时携带包含以第二杂质流量流动的磷的第二杂质，以及（d）以硅源流率流动硅源材料。第二载气流量大于第一载气流量。

2. 发明授权

US06858062B2 Residual gas removing device and method thereof 有权
标题翻译：残余气体去除装置及其方法
公开(公告)号：US06858062B2
公开(公告)日：2005-02-22
申请号：US10046282
申请日：2002-01-16
申请人： Chul-Hwan Choi , Jin-Ho Jeon , Yong-Gab Kim , Jong-Seung Yi , Min-Woo Lee , Kyung-Tae Kim , Chan-Hyung Cho
发明人： Chul-Hwan Choi , Jin-Ho Jeon , Yong-Gab Kim , Jong-Seung Yi , Min-Woo Lee , Kyung-Tae Kim , Chan-Hyung Cho
IPC分类号： H01L21/02 , C23C16/42 , C23C16/44 , F17D1/04 , B01D53/04
CPC分类号： C23C16/4408 , C23C16/42 , C23C16/45561 , F17D1/04
摘要： A residual gas removing device for a gas supply apparatus in a semiconductor fabricating facility, includes a low stress valve disposed between a mass flow controller and a chamber. The low stress valve alternately supplies or cuts off a gas from the mass flow controller to the chamber. A WF6 gas removing apparatus is in flow communication with a gas inlet line of the low stress valve to remove a residual WF6 gas in the gas inlet line, before proceeding with a subsequent deposition step.
摘要翻译：一种用于半导体制造设备中的气体供应装置的残余气体去除装置，包括设置在质量流量控制器和室之间的低应力阀。低应力阀交替地将气体从质量流量控制器提供或切断到腔室。在进行后续沉积步骤之前，WF6气体去除装置与低应力阀的气体入口管线流动连通，以除去气体入口管线中的残余WF 6气体。

3. 发明授权

US06569782B2 Insulating layer, semiconductor device and methods for fabricating the same 失效
公开(公告)号：US06569782B2
公开(公告)日：2003-05-27
申请号：US09800892
申请日：2001-03-08
申请人： Jin-Ho Jeon , Byoung-Deog Choi , Jong-Seung Yi , Tae-Wook Seo
发明人： Jin-Ho Jeon , Byoung-Deog Choi , Jong-Seung Yi , Tae-Wook Seo
IPC分类号： H01L2131
CPC分类号： H01L21/02129 , C23C16/401 , C23C16/56 , H01L21/02271 , H01L21/02304 , H01L21/02337 , H01L21/31625
摘要： An insulating layer having a BPSG layer, a semiconductor device and methods for fabricating them. After preparing an oxidizing atmosphere using an oxygen gas, a first seed layer is formed with a tetraethylorthosilicate (TEOS) and the oxygen gas. Thereafter, a second seed layer, used to form an insulating layer capable of controlling an amount of a boron, is formed by means of using a triethylborate (TEB), the TEOS and the oxygen gas. Then, the insulating layer having a BPSG layer is formed using the TEB, a triethylphosphate, the TEOS and an ozone gas. About 5.25 to 5.75% by weight of the boron and about 2.75 to 4.25% by weight of the phosphorous are added to the insulating layer.

4. 发明授权

US07180129B2 Semiconductor device including insulating layer 有权
标题翻译：半导体器件包括绝缘层
公开(公告)号：US07180129B2
公开(公告)日：2007-02-20
申请号：US10673937
申请日：2003-09-30
申请人： Woo-Chan Jung , Jin-Ho Jeon , Jeon-Sig Lim , Jong-Seung Yi
发明人： Woo-Chan Jung , Jin-Ho Jeon , Jeon-Sig Lim , Jong-Seung Yi
IPC分类号： H01L29/792 , H01L29/76 , H01L29/94 , H01L31/062 , H01L31/119
CPC分类号： H01L21/02129 , C23C16/401 , C23C16/56 , H01L21/02271 , H01L21/02304 , H01L21/02337 , H01L21/31625
摘要： A method of manufacturing an insulating layer that ensures reproducibility across like manufacturing apparatus. The insulating layer is formed on the substrate by (a) flowing an oxidizing gas at an oxidizing gas flow rate, (b) flowing a first carrier gas at a first carrier gas flow rate while carrying a first impurity including boron flowing at a first impurity flow rate, (c) flowing a second carrier gas at a second carrier gas flow rate while carrying a second impurity including phosphorus flowing at a second impurity flow rate, and (d) flowing a silicon source material at a silicon source flow rate. The second carrier gas flow rate is greater than the first carrier gas flow rate.
摘要翻译：一种制造绝缘层的方法，其确保在同一制造装置上的再现性。通过（a）以氧化气体流量使氧化气体流动，（b）使第一载气以第一载气流量流动，同时携带包含以第一杂质流动的硼的第一杂质，形成绝缘层流速，（c）以第二载气流量流动第二载气，同时携带包含以第二杂质流量流动的磷的第二杂质，以及（d）以硅源流率流动硅源材料。第二载气流量大于第一载气流量。

5. 发明授权

US06730619B2 Method of manufacturing insulating layer and semiconductor device including insulating layer 失效
标题翻译：制造绝缘层的方法和包括绝缘层的半导体器件
公开(公告)号：US06730619B2
公开(公告)日：2004-05-04
申请号：US10122272
申请日：2002-04-16
申请人： Woo-Chan Jung , Jin-Ho Jeon , Jeon-Sig Lim , Jong-Seung Yi
发明人： Woo-Chan Jung , Jin-Ho Jeon , Jeon-Sig Lim , Jong-Seung Yi
IPC分类号： H01L2131
CPC分类号： H01L21/02129 , C23C16/401 , C23C16/56 , H01L21/02271 , H01L21/02304 , H01L21/02337 , H01L21/31625
摘要： A method of manufacturing an insulating layer that ensures reproducibility across like manufacturing apparatus. The insulating layer is formed on the substrate by (a) flowing an oxidizing gas at an oxidizing gas flow rate, (b) flowing a first carrier gas at a first carrier gas flow rate while carrying a first impurity including boron flowing at a first impurity flow rate, (c) flowing a second carrier gas at a second carrier gas flow rate while carrying a second impurity including phosphorus flowing at a second impurity flow rate, and (d) flowing a silicon source material at a silicon source flow rate. The second carrier gas flow rate is greater than the first carrier gas flow rate.
摘要翻译：一种制造绝缘层的方法，其确保在同一制造装置上的再现性。通过（a）以氧化气体流量使氧化气体流动，（b）使第一载气以第一载气流量流动，同时携带包含以第一杂质流动的硼的第一杂质，形成绝缘层流速，（c）以第二载气流量流动第二载气，同时携带包含以第二杂质流量流动的磷的第二杂质，以及（d）以硅源流率流动硅源材料。第二载气流量大于第一载气流量。

6. 发明授权

US06451694B1 Control of abnormal growth in dichloro silane (DCS) based CVD polycide WSix films 有权
标题翻译：控制二氯硅烷（DCS）基CVD聚硅氧烷WSix膜的异常生长
公开(公告)号：US06451694B1
公开(公告)日：2002-09-17
申请号：US09826203
申请日：2001-04-04
申请人： Jeon-Sig Lim , Jin-Ho Jeon , Jong-Seung Yi , Chul-Hwan Choi
发明人： Jeon-Sig Lim , Jin-Ho Jeon , Jong-Seung Yi , Chul-Hwan Choi
IPC分类号： H01L2144
CPC分类号： H01L21/32053 , H01L21/28061 , H01L21/28556 , Y10S438/903
摘要： In a process for mitigating and/or eliminating the abnormal growth of underlying polysilicon in dichloro silane-based CVD polycide WSix films, a first technique conducts the deposition of the underlying polysilicon layer at a temperature that substantially avoids crystallization of the underlying polysilicon. A second approach reduces the exposure (for example time period and or concentration) of the mono-silane SiH4 post flush, so as to avoid infusion of silicon into the underlying polysilicon layer, and resulting abnormal growth. In this manner, abnormal effects, such as stress fractures formed in subsequent layers, can be eliminated.
摘要翻译：在用于减轻和/或消除二氯硅烷基CVD多硅化物WSix膜中底层多晶硅的异常生长的过程中，第一种技术在基本上避免下层多晶硅结晶的温度下进行下面的多晶硅层的沉积。第二种方法减少了冲洗后单硅烷SiH4的暴露（例如时间段和/或浓度），以避免将硅注入到下面的多晶硅层中，从而导致异常生长。以这种方式，可以消除诸如在后续层中形成的应力断裂等异常效应。

7. 发明授权

US06387776B1 Method for forming trench isolation regions 有权
标题翻译：形成沟槽隔离区域的方法
公开(公告)号：US06387776B1
公开(公告)日：2002-05-14
申请号：US09520716
申请日：2000-03-08
申请人： Jong-Seung Yi , Tae Wook Seo , Jin-Ho Jeon
发明人： Jong-Seung Yi , Tae Wook Seo , Jin-Ho Jeon
IPC分类号： H01L2176
CPC分类号： H01L21/76232
摘要： A method for forming trench isolation regions in a semiconductor device reliably electrically isolates a device and enhances a device density. The method for forming trench isolation regions includes forming a trench on a surface of a semiconductor device with a predetermined depth; forming a nitride liner layer on the surface of the semiconductor including the trench, forming a gas distribution region which is uniformly distributed on the nitride liner layer; and forming an insulation layer by filling the trench after said forming of the gas distribution region. The gas distribution region is preferably formed by introducing an ozone gas. The insulation layer is preferably formed by simultaneously introducing ozone gas and TEOS(Tetra Ethyl Ortho-Silicate) chemical.
摘要翻译：在半导体器件中形成沟槽隔离区域的方法可靠地电隔离器件并提高器件密度。用于形成沟槽隔离区的方法包括在半导体器件的表面上形成具有预定深度的沟槽; 在包括沟槽的半导体的表面上形成氮化物衬垫层，形成均匀分布在氮化物衬垫层上的气体分布区域; 以及在形成气体分配区域之后通过填充沟槽来形成绝缘层。优选通过引入臭氧气体来形成气体分布区域。绝缘层优选通过同时引入臭氧气体和TEOS（四乙基正硅酸盐）化学品而形成。

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