专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US06700827B2 Cam circuit with error correction 失效
标题翻译：具有误差校正的凸轮电路
公开(公告)号：US06700827B2
公开(公告)日：2004-03-02
申请号：US10226512
申请日：2002-08-23
申请人： Chuen-Der Lien , Michael J. Miller
发明人： Chuen-Der Lien , Michael J. Miller
IPC分类号： G11C1500
CPC分类号： G11C15/04 , G11C11/4125 , G11C15/043 , G11C15/046
摘要： A CAM circuit including a RAM array, a CAM array, a control/interface circuit, and an error detection and correction (EDC) circuit. The control/interface circuit systematically writes data from the RAM array to the CAM array, thereby preventing soft errors by continually refreshing data stored in the CAM array. The RAM array also stores check bits for each data word that can be generated by the EDC circuit when the data words are initially written to the CAM circuit. During the refresh operation, data words and associated check bits are read from the RAM array and transmitted to the EDC circuit. The EDC circuit analyzes each data word and associated check bits to detect errors, and corrects the data word, if necessary, before sending the data word to the CAM array.
摘要翻译：包括RAM阵列，CAM阵列，控制/接口电路和错误检测和校正（EDC）电路的CAM电路。控制/接口电路系统地将数据从RAM阵列写入CAM阵列，从而通过持续刷新存储在CAM阵列中的数据来防止软错误。当数据字最初写入CAM电路时，RAM阵列还存储可由EDC电路产生的每个数据字的校验位。在刷新操作期间，从RAM阵列读取数据字和相关的校验位，并发送到EDC电路。 EDC电路分析每个数据字和相关的检查位以检测错误，如果需要，在将数据字发送到CAM阵列之前校正数据字。

2. 发明授权

US06560156B2 CAM circuit with radiation resistance 有权
公开(公告)号：US06560156B2
公开(公告)日：2003-05-06
申请号：US10099913
申请日：2002-03-14
申请人： Chuen-Der Lien , Michael J. Miller
发明人： Chuen-Der Lien , Michael J. Miller
IPC分类号： G11C700
CPC分类号： G11C15/046 , G11C11/4125 , G11C15/04 , G11C15/043
摘要： A CAM circuit including a RAM array, a CAM array, and a control circuit that systematically writes data from the RAM array to the CAM array, thereby preventing soft errors by continually restoring data that has been corrupted by radiation. The RAM and CAM arrays can be formed on the same substrate, but are preferably fabricated on separate substrates and mounted in a single package or on a PCB. Both the CAM and RAM can be formed using any conventional memory type (e.g., SRAM, DRAM, NVRAM), and the CAM array can be a binary, ternary, or quad CAM array. The CAM and RAM arrays can be formed on different substrates, or the same substrate. A system including an SRAM ternary CAM array and a RAM array perform quad CAM functions by performing read functions utilizing only the RAM array, while performing lookup functions using the ternary CAM array.

3. 发明授权

US07941723B1 Clock generator and method for providing reliable clock signal using array of MEMS resonators 有权
标题翻译：时钟发生器和使用MEMS谐振器阵列提供可靠时钟信号的方法
公开(公告)号：US07941723B1
公开(公告)日：2011-05-10
申请号：US11861869
申请日：2007-09-26
申请人： Chuen-Der Lien , Jimmy Lee
发明人： Chuen-Der Lien , Jimmy Lee
IPC分类号： G01R31/3181 , G01R31/40
CPC分类号： G01R31/31702 , G01R31/31727 , H03B5/32
摘要： A clock generator is disclosed that includes an array of MEMS resonators and a test circuit. The test circuit is operable at start-up to operate one or more of the MEMS resonators to generate test output and analyze the test output to determine whether the operated MEMS resonators meet test criteria. A MEMS resonator is selected that meets the test criteria and its output is used to generate an output clock signal. In addition, the test circuit is operable to analyze the output of the selected MEMS resonator and select a replacement MEMS resonator when the output of the selected MEMS resonator no longer meets the test criteria. The replacement MEMS resonator is then operated and its output is coupled to the output of the clock generator. Thereby, failing and potentially failing MEMS resonators are automatically replaced during operation of the clock generator in its end-use application.
摘要翻译：公开了一种包括MEMS谐振器阵列和测试电路的时钟发生器。测试电路在启动时可操作以操作一个或多个MEMS谐振器以产生测试输出并分析测试输出以确定所操作的MEMS谐振器是否符合测试标准。选择符合测试标准的MEMS谐振器，并且其输出用于产生输出时钟信号。另外，当选择的MEMS谐振器的输出不再满足测试标准时，测试电路可操作以分析所选择的MEMS谐振器的输出并选择替换的MEMS谐振器。然后更换MEMS谐振器，并将其输出耦合到时钟发生器的输出端。因此，在其最终用途应用中的时钟发生器的操作期间，故障和潜在故障的MEMS谐振器被自动替换。

4. 发明授权

US07522438B1 Method and apparatus for CAM with reduced cross-coupling interference 有权
公开(公告)号：US07522438B1
公开(公告)日：2009-04-21
申请号：US11931573
申请日：2007-10-31
申请人： Chuen-Der Lien , Chau-Chin Wu
发明人： Chuen-Der Lien , Chau-Chin Wu
IPC分类号： G11C15/00
CPC分类号： G11C15/04 , G11C7/02
摘要： A method and apparatus for a CAM with reduced cross-coupling interference have been disclosed.

5. 发明授权

US07187571B1 Method and apparatus for CAM with reduced cross-coupling interference 有权
标题翻译：具有降低的交叉耦合干扰的CAM的方法和装置
公开(公告)号：US07187571B1
公开(公告)日：2007-03-06
申请号：US10821601
申请日：2004-04-09
申请人： Chuen-Der Lien , Chau-Chin Wu
发明人： Chuen-Der Lien , Chau-Chin Wu
IPC分类号： G11C15/00 , G11C7/00
CPC分类号： G11C15/04 , G11C7/02
摘要： A method and apparatus for a CAM with reduced cross-coupling interference have been disclosed.
摘要翻译：已经公开了一种具有减小的交叉耦合干扰的CAM的方法和装置。

6. 发明授权

US06879504B1 Content addressable memory (CAM) devices having error detection and correction control circuits therein and methods of operating same 有权
标题翻译：具有错误检测和校正控制电路的内容可寻址存储器（CAM）装置及其操作方法
公开(公告)号：US06879504B1
公开(公告)日：2005-04-12
申请号：US10619638
申请日：2003-07-15
申请人： Chuen-Der Lien , Kee Park , Chau-Chin Wu , Mark Baumann
发明人： Chuen-Der Lien , Kee Park , Chau-Chin Wu , Mark Baumann
IPC分类号： G11C7/02 , G11C11/412 , G11C15/04 , G11C15/00
CPC分类号： G11C15/04 , G11C11/4125 , G11C15/043 , G11C15/046
摘要： Content addressable memory (CAM) devices include error detection and correction (EDC) control circuits therein. The EDC control circuit operates to correct soft errors in entries within a plurality of internal CAM array blocks with, at most, limited interruption to other operations performed by the CAM device. The EDC control circuit utilizes a multi-bit check word associated with each entry to detect a soft error and perform one-bit error correction on the entry. The EDC control circuit is configured to be active during a background mode of operation when the CAM array blocks are undergoing search operations in a foreground mode of operation. A CAM array block may also include a column of dual-function check bit cells that are configured to operate as a column of CAM cells when necessary to replace a defective column of CAM cells.
摘要翻译：内容可寻址存储器（CAM）装置包括其中的错误检测和校正（EDC）控制电路。 EDC控制电路用于校正多个内部CAM阵列块内的条目中的软错误，最多限制中断由CAM设备执行的其他操作。 EDC控制电路利用与每个条目相关联的多位检查字来检测软错误，并在条目上执行一位错误校正。当CAM阵列块在前台操作模式下正在进行搜索操作时，EDC控制电路被配置为在后台操作模式期间有效。 CAM阵列块还可以包括一列双功能校验位单元，其被配置为当需要更换CAM单元的缺陷列时作为CAM单元的列进行操作。

7. 发明授权

US06563754B1 DRAM circuit with separate refresh memory 有权
标题翻译： DRAM电路具有单独的刷新存储器
公开(公告)号：US06563754B1
公开(公告)日：2003-05-13
申请号：US09781524
申请日：2001-02-08
申请人： Chuen-Der Lien , Chau-Chin Wu
发明人： Chuen-Der Lien , Chau-Chin Wu
IPC分类号： G11C700
CPC分类号： G11C11/4125 , G11C15/04 , G11C15/043 , G11C15/046
摘要： A DRAM circuit including a first DRAM array used solely for refresh operations, and the second DRAM array for performing logic operations that is refreshed using data read from the first DRAM array. Specifically, data is read only from the first DRAM array during a read phase of the refresh operation, and is written to both the first DRAM array and the second DRAM array during the write phase of the refresh operation. Accordingly, the second DRAM array is able to simultaneously perform any type of logic operation without delay or disturbance caused by accessing the second DRAM array during the read phase. In one embodiment, the second DRAM array includes DRAM CAM cells that perform data matching operations using the data refreshed from the first DRAM array, which includes conventional DRAM memory cells. During read operations, because the data values stored in the first DRAM array and the second DRAM array are identical, data values are read from the conventional DRAM memory cells of the first DRAM array, instead of from the DRAM CAM cells.
摘要翻译：包括仅用于刷新操作的第一DRAM阵列的DRAM电路和用于执行使用从第一DRAM阵列读取的数据刷新的逻辑运算的第二DRAM阵列。具体地说，在刷新操作的读取阶段期间，数据仅从第一DRAM阵列读取，并且在刷新操作的写入阶段被写入第一DRAM阵列和第二DRAM阵列。因此，第二DRAM阵列能够在读取阶段期间同时执行任何类型的逻辑运算，而不会由于访问第二DRAM阵列而引起延迟或干扰。在一个实施例中，第二DRAM阵列包括使用从包括常规DRAM存储器单元的第一DRAM阵列刷新的数据执行数据匹配操作的DRAM CAM单元。在读取操作期间，由于存储在第一DRAM阵列和第二DRAM阵列中的数据值相同，所以从第一DRAM阵列的常规DRAM存储单元而不是从DRAM CAM单元读取数据值。

8. 发明授权

US06470418B1 Pipelining a content addressable memory cell array for low-power operation 有权
标题翻译：内置可寻址存储单元阵列，用于低功耗操作
公开(公告)号：US06470418B1
公开(公告)日：2002-10-22
申请号：US09232413
申请日：1999-01-15
申请人： Chuen-Der Lien , Chau-Chin Wu , John R. Mick
发明人： Chuen-Der Lien , Chau-Chin Wu , John R. Mick
IPC分类号： G06F1200
CPC分类号： G06F17/30982 , G11C7/1039 , G11C15/00
摘要： A content addressable memory (CAM) system that includes first and second CAM arrays, which generate first and second sets of match control signals, respectively, having higher and lower priorities, respectively. The first CAM array is enabled during a first memory cycle, and the first set of match control signals are analyzed. If a match exists in the first CAM array, a first priority encoder is enabled to process the first set of match control signals. If no match exists, the first priority encoder is not enabled, and a second memory cycle is initiated. The second CAM array is enabled during the second memory cycle, and the second set of signals is analyzed. If a match exists in the second CAM array, a second priority encoder is enabled to process the second set of match control signals. If no match exists, the second priority encoder is not enabled.
摘要翻译：一种内容寻址存储器（CAM）系统，其包括分别产生具有较高和较低优先级的第一和第二组匹配控制信号的第一和第二CAM阵列。第一个CAM阵列在第一个存储器周期中被使能，并且分析第一组匹配控制信号。如果在第一CAM阵列中存在匹配，则使能第一优先级编码器来处理第一组匹配控制信号。如果不存在匹配，则不启用第一优先级编码器，并且启动第二存储器周期。第二个CAM阵列在第二个存储周期中被使能，第二组信号被分析。如果在第二CAM阵列中存在匹配，则使能第二优先级编码器来处理第二组匹配控制信号。如果不存在匹配，则不启用第二优先级编码器。

9. 发明授权

US06373739B1 Quad CAM cell with minimum cell size 有权
标题翻译：具有最小单元尺寸的四边形CAM单元
公开(公告)号：US06373739B1
公开(公告)日：2002-04-16
申请号：US09731160
申请日：2000-12-06
申请人： Chuen-Der Lien , Chau-Chin Wu
发明人： Chuen-Der Lien , Chau-Chin Wu
IPC分类号： G11C1500
CPC分类号： G11C15/04
摘要： A four-state (quad) CAM cell that stores one of four logic values: a logic high value, a logic low value, a logic high don't care value, and a logic low don't care value. Each quad CAM cell includes a first memory cell, a second memory cell, a comparator circuit, and a control switch. The first memory cell stores a data value (i.e., logic high value or logic low value), and transmits this stored data value to the comparator circuit. The second memory cell stores a care/don't care data value that is transmitted to the control switch. Portions of the comparator circuit and the control switch form a discharge path between a match line and a discharge line connected to the quad CAM cell. The control switch is controlled by the care/don't care value to open/close a first part of the discharge path. The comparator circuit is controlled to open a second part of the discharge path when, for example, the stored data value is equal to an applied data value.
摘要翻译：存储四个逻辑值之一的四状态（四）CAM单元：逻辑高电平值，逻辑低电平值，逻辑高电平无关值，逻辑低电平无关。每个四边形CAM单元包括第一存储单元，第二存储单元，比较器电路和控制开关。第一存储单元存储数据值（即，逻辑高值或逻辑低值），并将该存储的数据值发送到比较器电路。第二存储器单元存储发送到控制开关的保养/不关心数据值。比较器电路和控制开关的部分在匹配线和连接到四边形CAM单元的放电线之间形成放电路径。控制开关由注意/不关心的值来控制，以打开/关闭排放路径的第一部分。当例如所存储的数据值等于所应用的数据值时，控制比较器电路以打开放电路径的第二部分。

10. 发明授权

US06266263B1 CAM array with minimum cell size 有权
标题翻译：具有最小单元格大小的CAM阵列
公开(公告)号：US06266263B1
公开(公告)日：2001-07-24
申请号：US09678502
申请日：2000-10-02
申请人： Chuen-Der Lien , Chau-Chin Wu
发明人： Chuen-Der Lien , Chau-Chin Wu
IPC分类号： G11C1500
CPC分类号： G11C15/04
摘要： A CAM cell array is disclosed in which a comparator function is performed by incorporating a selected transistor of each CAM cell latch into a signal path extending between a match line and a second (e.g., charge or discharge) line. A first terminal of the selected transistor is connected to the match line (or the second line), a second terminal is connected to an internal node of the latch, and a gate terminal of the selected transistor is controlled by the data value stored in the latch. The internal node of the latch is connected through a control transistor having a gate terminal connected to receive an applied data value. When the applied data value is equal to the stored data value, the match line is coupled to the second line along a signal path passing through the selected transistor and the pass transistor. During programming (i.e., when data values are written to the latch), the match line (or second line) carries a low/high voltage signal needed to set (flip) the latch into a desired state.
摘要翻译：公开了一种CAM单元阵列，其中通过将每个CAM单元锁存器的所选晶体管并入在匹配线和第二（例如充电或放电）线之间延伸的信号路径中来执行比较器功能。所选择的晶体管的第一端子连接到匹配线（或第二线），第二端子连接到锁存器的内部节点，并且所选晶体管的栅极端子由存储在所述晶体管中的数据值控制锁定。锁存器的内部节点通过连接有栅极端子的控制晶体管连接以接收施加的数据值。当应用的数据值等于存储的数据值时，匹配线沿着通过所选晶体管和传输晶体管的信号路径耦合到第二线。在编程期间（即，当数据值被写入锁存器时），匹配线（或第二线）承载将锁存器设置（翻转）到期望状态所需的低/高电压信号。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式