专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20130126727A1 Time-of-Flight Electron Energy Analyzer 审中-公开
标题翻译：飞行时间电子能量分析仪
公开(公告)号：US20130126727A1
公开(公告)日：2013-05-23
申请号：US13389784
申请日：2010-06-29
申请人： Christopher Jozwiak , Zahid Hussain , Alessandra Lanzara , Gennadi V. Lebedev , Andreas K. Schmid , Nord C. Andresen , Jeff Graf
发明人： Christopher Jozwiak , Zahid Hussain , Alessandra Lanzara , Gennadi V. Lebedev , Andreas K. Schmid , Nord C. Andresen , Jeff Graf
IPC分类号： H01J49/44
CPC分类号： H01J49/446 , G01N23/227
摘要： A time-of-flight (TOF) photoemission electron energy analyzer includes a TOF spectrometer for measuring an energy spectrum of a beam of electrons photoemitted from a sample and a 90 degree bend bandpass filter for spatially dispersing and filtering electrons according to energy. An exchange scattering electron spin polarimeter for detecting the spin of electrons includes an entrance aperture for admitting an electron beam, a magnetizable target positionable for receiving the electron beam at an angle relative to a target surface normal vector, a pair of Helmholtz coils positioned about the target for magnetizing the target in a selected direction, and a high-speed multi-channel plate (MCP) detector facing toward the target for receiving electrons reflected from the target surface, the MCP outputting a signal corresponding to the spin dependent intensity and time of electrons' arrivals.
摘要翻译：飞行时间（TOF）光电子能量分析仪包括用于测量从样品发射的电子束的能谱的TOF光谱仪和用于根据能量空间分散和过滤电子的90度弯曲带通滤光器。用于检测电子自旋的交换散射电子自旋旋光仪包括用于允许电子束的入射孔，可定位成可相对于目标表面法线向量以一定角度接收电子束的可磁化靶;围绕目标，用于沿所选方向磁化目标;以及面向目标的高速多通道板（MCP）检测器，用于接收从目标表面反射的电子，MCP输出对应于自旋相关强度和时间的信号电子到达

2. 发明授权

US08142754B2 Method for synthesis of high quality graphene 有权
标题翻译：合成高品质石墨烯的方法
公开(公告)号：US08142754B2
公开(公告)日：2012-03-27
申请号：US13043329
申请日：2011-03-08
申请人： Alessandra Lanzara , Andreas K. Schmid , Xiaozhu Yu , Choonkyu Hwang , Annemarie Kohl , Chris M. Jozwiak
发明人： Alessandra Lanzara , Andreas K. Schmid , Xiaozhu Yu , Choonkyu Hwang , Annemarie Kohl , Chris M. Jozwiak
IPC分类号： B01J19/08
CPC分类号： B82Y40/00 , B82Y30/00 , C01B32/184 , C01B32/188 , Y10S977/744
摘要： A method is described herein for the providing of high quality graphene layers on silicon carbide wafers in a thermal process. With two wafers facing each other in close proximity, in a first vacuum heating stage, while maintained at a vacuum of around 10−6 Torr, the wafer temperature is raised to about 1500° C., whereby silicon evaporates from the wafer leaving a carbon rich surface, the evaporated silicon trapped in the gap between the wafers, such that the higher vapor pressure of silicon above each of the wafers suppresses further silicon evaporation. As the temperature of the wafers is raised to about 1530° C. or more, the carbon atoms self assemble themselves into graphene.
摘要翻译：本文描述了一种在热处理中在碳化硅晶片上提供高品质石墨烯层的方法。在两个晶片彼此面对的情况下，在第一真空加热阶段中，在保持在约10 -6 Torr的真空的同时，将晶片温度升高至约1500℃，由此硅从晶片上蒸发掉碳富集的表面，蒸发的硅被捕获在晶片之间的间隙中，使得每个晶片上方的较高的硅蒸汽压力进一步抑制硅的蒸发。当晶片的温度升至约1530℃或更高时，碳原子自身组装成石墨烯。

3. 发明申请

US20110223094A1 METHOD FOR SYNTHESIS OF HIGH QUALITY GRAPHENE 有权
标题翻译：合成高品质石墨的方法
公开(公告)号：US20110223094A1
公开(公告)日：2011-09-15
申请号：US13043329
申请日：2011-03-08
申请人： Alessandra Lanzara , Andreas K. Schmid , Xiaozhu Yu , Choonkyu Hwang , Annemarie Kohl , Chris M. Jozwiak
发明人： Alessandra Lanzara , Andreas K. Schmid , Xiaozhu Yu , Choonkyu Hwang , Annemarie Kohl , Chris M. Jozwiak
IPC分类号： C01B31/02 , C01B31/00
CPC分类号： B82Y40/00 , B82Y30/00 , C01B32/184 , C01B32/188 , Y10S977/744
摘要： A method is described herein for the providing of high quality graphene layers on silicon carbide wafers in a thermal process. With two wafers facing each other in close proximity, in a first vacuum heating stage, while maintained at a vacuum of around 10−6 Torr, the wafer temperature is raised to about 1500° C., whereby silicon evaporates from the wafer leaving a carbon rich surface, the evaporated silicon trapped in the gap between the wafers, such that the higher vapor pressure of silicon above each of the wafers suppresses further silicon evaporation. As the temperature of the wafers is raised to about 1530° C. or more, the carbon atoms self assemble themselves into graphene.
摘要翻译：本文描述了一种在热处理中在碳化硅晶片上提供高品质石墨烯层的方法。在两个晶片彼此面对的情况下，在第一真空加热阶段中，在保持在约10 -6 Torr的真空的同时，将晶片温度升高至约1500℃，由此硅从晶片上蒸发掉碳富集的表面，蒸发的硅被捕获在晶片之间的间隙中，使得每个晶片上方的较高的硅蒸汽压力进一步抑制硅的蒸发。当晶片的温度升至约1530℃或更高时，碳原子自身组装成石墨烯。

4. 发明授权

US08398872B2 Method for preparing ultraflat, atomically perfect areas on large regions of a crystal surface by heteroepitaxy deposition 有权
标题翻译：通过异质外延沉积在晶体表面的大区域上制备超平坦，原子完美区域的方法
公开(公告)号：US08398872B2
公开(公告)日：2013-03-19
申请号：US12921562
申请日：2009-03-10
申请人： Farid El Gabaly , Andreas K. Schmid
发明人： Farid El Gabaly , Andreas K. Schmid
IPC分类号： B44C1/22
CPC分类号： C30B23/063 , C30B29/02 , C30B33/12
摘要： A novel method of forming large atomically flat areas is described in which a crystalline substrate having a stepped surface is exposed to a vapor of another material to deposit a material onto the substrate, which material under appropriate conditions self arranges to form 3D islands across the substrate surface. These islands are atomically flat at their top surface, and conform to the stepped surface of the substrate below at the island-substrate interface. Thereafter, the deposited materials are etched away, in the etch process the atomically flat surface areas of the islands transferred to the underlying substrate. Thereafter the substrate may be cleaned and annealed to remove any remaining unwanted contaminants, and eliminate any residual defects that may have remained in the substrate surface as a result of pre-existing imperfections of the substrate.
摘要翻译：描述了形成大的原子平坦区域的新颖方法，其中具有台阶表面的晶体衬底暴露于另一材料的蒸气以将材料沉积到衬底上，该材料在适当条件下自行布置以在衬底上形成3D岛表面。这些岛在其顶表面处原子平坦，并且在岛 - 基底界面处与基底的阶梯表面相符。此后，沉积的材料被蚀刻掉，在蚀刻过程中，岛的原子平坦表面区域转移到下面的衬底。此后，基板可以被清洁和退火以除去任何残留的不需要的污染物，并且由于基板的预先存在的缺陷，消除了可能残留在基板表面中的任何残留缺陷。

5. 发明授权

US08826726B2 Gas sensor 有权
标题翻译：气体传感器
公开(公告)号：US08826726B2
公开(公告)日：2014-09-09
申请号：US13318522
申请日：2010-04-29
申请人： Andreas K. Schmid , Arantzazu Mascaraque , Benito Santos , Juan de la Figuera
发明人： Andreas K. Schmid , Arantzazu Mascaraque , Benito Santos , Juan de la Figuera
IPC分类号： G01R33/00 , G01N27/72 , G01N27/74
CPC分类号： G01N27/74
摘要： A gas sensor is described which incorporates a sensor stack comprising a first film layer of a ferromagnetic material, a spacer layer, and a second film layer of the ferromagnetic material. The first film layer is fabricated so that it exhibits a dependence of its magnetic anisotropy direction on the presence of a gas, That is, the orientation of the easy axis of magnetization will flip from out-of-plane to in-plane when the gas to be detected is present in sufficient concentration. By monitoring the change in resistance of the sensor stack when the orientation of the first layer's magnetization changes, and correlating that change with temperature one can determine both the identity and relative concentration of the detected gas. In one embodiment the stack sensor comprises a top ferromagnetic layer two mono layers thick of cobalt deposited upon a spacer layer of ruthenium, which in turn has a second layer of cobalt disposed on its other side, this second cobalt layer in contact with a programmable heater chip.
摘要翻译：描述了一种气体传感器，其包括传感器堆叠，该传感器堆叠包括铁磁材料的第一膜层，间隔层和铁磁材料的第二膜层。制造第一膜层，使得其表现出其磁各向异性方向对气体存在的依赖性，即，当气体的磁化强度的方向从外部平面翻转到平面时被检测的浓度以足够的浓度存在。通过监测传感器堆的电阻变化，当第一层磁化的取向发生变化时，并将该变化与温度相关联可以确定检测到的气体的同一性和相对浓度。在一个实施例中，堆叠传感器包括沉积在钌间隔层上的两层单层厚度的钴的顶部铁磁层，其又具有设置在其另一侧上的第二层钴，该第二钴层与可编程加热器芯片。

6. 发明申请

US20120131988A1 Gas Sensor 有权
标题翻译：气体传感器
公开(公告)号：US20120131988A1
公开(公告)日：2012-05-31
申请号：US13318522
申请日：2010-04-29
申请人： Andreas K. Schmid , Arantzazu Mascaraque , Benito Santos , Juan de la Figuera
发明人： Andreas K. Schmid , Arantzazu Mascaraque , Benito Santos , Juan de la Figuera
IPC分类号： G01N27/74
CPC分类号： G01N27/74
摘要： A gas sensor is described which incorporates a sensor stack comprising a first film layer of a ferromagnetic material, a spacer layer, and a second film layer of the ferromagnetic material. The first film layer is fabricated so that it exhibits a dependence of its magnetic anisotropy direction on the presence of a gas, That is, the orientation of the easy axis of magnetization will flip from out-of-plane to in-plane when the gas to be detected is present in sufficient concentration. By monitoring the change in resistance of the sensor stack when the orientation of the first layer's magnetization changes, and correlating that change with temperature one can determine both the identity and relative concentration of the detected gas. In one embodiment the stack sensor comprises a top ferromagnetic layer two mono layers thick of cobalt deposited upon a spacer layer of ruthenium, which in turn has a second layer of cobalt disposed on its other side, this second cobalt layer in contact with a programmable heater chip.
摘要翻译：描述了一种气体传感器，其包括传感器堆叠，该传感器堆叠包括铁磁材料的第一膜层，间隔层和铁磁材料的第二膜层。制造第一膜层，使得其表现出其磁各向异性方向对气体存在的依赖性，即，当气体的磁化强度的方向从外部平面翻转到平面时被检测的浓度以足够的浓度存在。通过监测传感器堆的电阻变化，当第一层磁化的取向发生变化时，并将该变化与温度相关联可以确定检测到的气体的同一性和相对浓度。在一个实施例中，堆叠传感器包括沉积在钌间隔层上的两层单层厚度的钴的顶部铁磁层，其又具有设置在其另一侧上的第二层钴，该第二钴层与可编程加热器芯片。

7. 发明申请

US20110042351A1 METHOD FOR PREPARING ULTRAFLAT, ATOMICALLY PERFECT AREAS ON LARGE REGIONS OF A CRYSTAL SURFACE BY HETEROEPITAXY DEPOSITION 有权
标题翻译：用于制备超临界的方法，通过异位沉积形成晶体表面的大面积的原始完整区域
公开(公告)号：US20110042351A1
公开(公告)日：2011-02-24
申请号：US12921562
申请日：2009-03-10
申请人： Farid El Gabaly , Andreas K. Schmid
发明人： Farid El Gabaly , Andreas K. Schmid
IPC分类号： B05D3/10
CPC分类号： C30B23/063 , C30B29/02 , C30B33/12
摘要： A novel method of forming large atomically flat areas is described in which a crystalline substrate having a stepped surface is exposed to a vapor of another material to deposit a material onto the substrate, which material under appropriate conditions self arranges to form 3D islands across the substrate surface. These islands are atomically flat at their top surface, and conform to the stepped surface of the substrate below at the island-substrate interface. Thereafter, the deposited materials are etched away, in the etch process the atomically flat surface areas of the islands transferred to the underlying substrate. Thereafter the substrate may be cleaned and annealed to remove any remaining unwanted contaminants, and eliminate any residual defects that may have remained in the substrate surface as a result of pre-existing imperfections of the substrate.
摘要翻译：描述了形成大的原子平坦区域的新颖方法，其中具有台阶表面的晶体衬底暴露于另一材料的蒸气以将材料沉积到衬底上，该材料在适当条件下自行布置以在衬底上形成3D岛表面。这些岛在其顶表面处原子平坦，并且在岛 - 基底界面处与基底的阶梯表面相符。此后，沉积的材料被蚀刻掉，在蚀刻过程中，岛的原子平坦表面区域转移到下面的衬底。此后，基板可以被清洁和退火以除去任何残留的不需要的污染物，并且由于基板的预先存在的缺陷，消除了可能残留在基板表面中的任何残留缺陷。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式