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    • 6. 发明申请
    • THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF AND ARRAY SUBSTRATE INCLUDING THE THIN FILM TRANSISTOR
    • 薄膜晶体管及其制造方法及其包括薄膜晶体管的阵列衬底
    • US20140312349A1
    • 2014-10-23
    • US13697409
    • 2012-07-17
    • Chunsheng Jiang
    • Chunsheng Jiang
    • H01L29/786H01L29/66
    • H01L29/78675H01L21/26526H01L27/1277H01L29/66757H01L29/78618
    • An embodiment of the present invention provides a thin film transistor and a manufacturing method thereof and an array substrate comprising the thin film transistor. The method comprises: depositing an amorphous layer on a substrate, and patterning the amorphous layer so as to form an active layer comprising a source region, a drain region and a channel region; forming a gate insulating layer and a gate electrode above the channel region; depositing an induction metal layer on the substrate on which the gate electrode is formed; doping impurity into the source region and the drain region by an ion implanting process and bombarding part of the induction metal into the source region and the drain region; removing the induction metal layer; performing a thermal treatment to the doped active layer so that the impurity is activated and the metal induced crystallization and the metal induced lateral crystallization occur in the active layer due to the induction metal, converting the amorphous silicon to polysilicon in the source region, the drain region and the channel region of the active layer; and forming a source electrode and a drain electrode.
    • 本发明的实施例提供一种薄膜晶体管及其制造方法以及包括该薄膜晶体管的阵列基板。 该方法包括:在衬底上沉积非晶层,并对非晶层进行构图以形成包括源极区,漏极区和沟道区的有源层; 在沟道区上形成栅极绝缘层和栅电极; 在其上形成有栅电极的基板上沉积感应金属层; 通过离子注入工艺将杂质掺杂到源区和漏区,并将部分感应金属轰击到源区和漏区; 去除感应金属层; 对掺杂的有源层进行热处理,使得杂质被激活,并且由于感应金属而在有源层中发生金属诱导的结晶和金属诱导的横向结晶,将非晶硅转换成源区中的多晶硅,漏极 区域和有源层的沟道区域; 以及形成源电极和漏电极。