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1. 发明授权

US07589378B2 Power LDMOS transistor 有权
标题翻译：电源LDMOS晶体管
公开(公告)号：US07589378B2
公开(公告)日：2009-09-15
申请号：US11676613
申请日：2007-02-20
申请人： Christopher Boguslaw Kocon , Shuming Xu , Jacek Korec
发明人： Christopher Boguslaw Kocon , Shuming Xu , Jacek Korec
IPC分类号： H01L29/76 , H01L29/94 , H01L31/00
CPC分类号： H01L29/7811 , H01L29/0634 , H01L29/0878 , H01L29/1095 , H01L29/402 , H01L29/41741 , H01L29/4175 , H01L29/41758 , H01L29/41766 , H01L29/4933 , H01L29/7802 , H01L29/7816 , H01L29/7823
摘要： A laterally diffused metal-oxide-semiconductor transistor device includes a substrate having a first conductivity type with a semiconductor layer formed over the substrate. A source region and a drain extension region of the first conductivity type are formed in the semiconductor layer. A body region of a second conductivity type is formed in the semiconductor layer. A conductive gate is formed over a gate dielectric layer that is formed over a channel region. A drain contact electrically connects the drain extension region to the substrate and is laterally spaced from the channel region. The drain contact includes a highly-doped drain contact region formed between the substrate and the drain extension region in the semiconductor layer, wherein a topmost portion of the highly-doped drain contact region is spaced from the upper surface of the semiconductor layer. A source contact electrically connects the source region to the body region.
摘要翻译：横向扩散的金属氧化物半导体晶体管器件包括具有在衬底上形成的半导体层的第一导电类型的衬底。在半导体层中形成第一导电类型的源极区域和漏极延伸区域。在半导体层中形成第二导电类型的体区。导电栅极形成在沟道区域上形成的栅极电介质层上。漏极接触将漏极延伸区域电连接到衬底并且与沟道区域横向间隔开。漏极接触包括形成在半导体层中的衬底和漏极延伸区域之间的高掺杂漏极接触区域，其中高掺杂漏极接触区域的最高部分与半导体层的上表面间隔开。源极触点将源极区域电连接到主体区域。

2. 发明授权

US07745846B2 LDMOS integrated Schottky diode 有权
标题翻译： LDMOS集成肖特基二极管
公开(公告)号：US07745846B2
公开(公告)日：2010-06-29
申请号：US12014581
申请日：2008-01-15
申请人： Jacek Korec , Shuming Xu , Christopher Boguslaw Kocon
发明人： Jacek Korec , Shuming Xu , Christopher Boguslaw Kocon
IPC分类号： H01L31/111 , H01L21/28
CPC分类号： H01L27/0727 , H01L29/0696 , H01L29/0878 , H01L29/1095 , H01L29/40 , H01L29/41741 , H01L29/4175 , H01L29/41758 , H01L29/41766 , H01L29/4933 , H01L29/7806 , H01L29/782 , H01L29/872
摘要： A semiconductor device includes a substrate having a first conductivity type and a semiconductor layer formed over the substrate and having lower and upper surfaces. A laterally diffused metal-oxide-semiconductor (LDMOS) transistor device is formed over the substrate and includes a source region of the first conductivity type and a drain extension region of the first conductivity type formed in the semiconductor layer proximate the upper surface of the semiconductor layer, and a drain contact electrically connecting the drain extension region to the substrate. A Schottky diode is formed over the substrate and includes at least one doped region of the first conductivity type formed in the semiconductor layer proximate to the upper surface, an anode contact forming a Schottky barrier with the at least one doped region, and a cathode contact laterally spaced from the anode contact and electrically connecting at least one doped region to the substrate.
摘要翻译：半导体器件包括具有第一导电类型的衬底和形成在衬底上并具有下表面和上表面的半导体层。横向扩散的金属氧化物半导体（LDMOS）晶体管器件形成在衬底上，并且包括第一导电类型的源极区域和形成在靠近半导体的上表面的半导体层中的第一导电类型的漏极延伸区域以及将漏极延伸区域与衬底电连接的漏极接触。肖特基二极管形成在衬底之上，并且包括形成在靠近上表面的半导体层中的至少一个第一导电类型的掺杂区域，形成具有至少一个掺杂区域的肖特基势垒的阳极接触器和阴极接触器与阳极接触件横向间隔开并将至少一个掺杂区域电连接到衬底。

3. 发明申请

US20080246086A1 SEMICONDUCTOR DEVICES HAVING CHARGE BALANCED STRUCTURE 有权
标题翻译：具有电荷平衡结构的半导体器件
公开(公告)号：US20080246086A1
公开(公告)日：2008-10-09
申请号：US12139984
申请日：2008-06-16
申请人： Jacek Korec , Shuming Xu , Christopher Boguslaw Kocon
发明人： Jacek Korec , Shuming Xu , Christopher Boguslaw Kocon
IPC分类号： H01L27/06
CPC分类号： H01L29/7802 , H01L29/0634 , H01L29/0878 , H01L29/1095 , H01L29/402 , H01L29/41741 , H01L29/4175 , H01L29/41758 , H01L29/41766 , H01L29/4933 , H01L29/7811 , H01L29/7816 , H01L29/7823
摘要： A laterally diffused metal-oxide-semiconductor transistor device includes a substrate having a first conductivity type with a semiconductor layer formed over the substrate. A source region and a drain extension region of the first conductivity type are formed in the semiconductor layer. A body region of a second conductivity type is formed in the semiconductor layer. A conductive gate is formed over a gate dielectric layer that is formed over a channel region. A drain contact electrically connects the drain extension region to the substrate and is laterally spaced from the channel region. The drain contact includes a highly-doped drain contact region formed between the substrate and the drain extension region in the semiconductor layer, wherein a topmost portion of the highly-doped drain contact region is spaced from the upper surface of the semiconductor layer. A source contact electrically connects the source region to the body region.
摘要翻译：横向扩散的金属氧化物半导体晶体管器件包括具有在衬底上形成的半导体层的第一导电类型的衬底。在半导体层中形成第一导电类型的源极区域和漏极延伸区域。在半导体层中形成第二导电类型的体区。导电栅极形成在沟道区域上形成的栅极电介质层上。漏极接触将漏极延伸区域电连接到衬底并且与沟道区域横向间隔开。漏极接触包括形成在半导体层中的衬底和漏极延伸区域之间的高掺杂漏极接触区域，其中高掺杂漏极接触区域的最高部分与半导体层的上表面间隔开。源极触点将源极区域电连接到主体区域。

4. 发明授权

US08692324B2 Semiconductor devices having charge balanced structure 有权
标题翻译：具有电荷平衡结构的半导体器件
公开(公告)号：US08692324B2
公开(公告)日：2014-04-08
申请号：US12139984
申请日：2008-06-16
申请人： Jacek Korec , Shuming Xu , Christopher Boguslaw Kocon
发明人： Jacek Korec , Shuming Xu , Christopher Boguslaw Kocon
IPC分类号： H01L29/66 , H01L29/78
CPC分类号： H01L29/7802 , H01L29/0634 , H01L29/0878 , H01L29/1095 , H01L29/402 , H01L29/41741 , H01L29/4175 , H01L29/41758 , H01L29/41766 , H01L29/4933 , H01L29/7811 , H01L29/7816 , H01L29/7823
摘要： A laterally diffused metal-oxide-semiconductor transistor device includes a substrate having a first conductivity type with a semiconductor layer formed over the substrate. A source region and a drain extension region of the first conductivity type are formed in the semiconductor layer. A body region of a second conductivity type is formed in the semiconductor layer. A conductive gate is formed over a gate dielectric layer that is formed over a channel region. A drain contact electrically connects the drain extension region to the substrate and is laterally spaced from the channel region. The drain contact includes a highly-doped drain contact region formed between the substrate and the drain extension region in the semiconductor layer, wherein a topmost portion of the highly-doped drain contact region is spaced from the upper surface of the semiconductor layer. A source contact electrically connects the source region to the body region.
摘要翻译：横向扩散的金属氧化物半导体晶体管器件包括具有在衬底上形成的半导体层的第一导电类型的衬底。在半导体层中形成第一导电类型的源极区域和漏极延伸区域。在半导体层中形成第二导电类型的体区。导电栅极形成在沟道区域上形成的栅极电介质层上。漏极接触将漏极延伸区域电连接到衬底并且与沟道区域横向间隔开。漏极接触包括形成在半导体层中的衬底和漏极延伸区域之间的高掺杂漏极接触区域，其中高掺杂漏极接触区域的最高部分与半导体层的上表面间隔开。源极触点将源极区域电连接到主体区域。

5. 发明申请

US20090179264A1 LDMOS INTEGRATED SCHOTTKY DIODE 有权
标题翻译： LDMOS集成肖特基二极管
公开(公告)号：US20090179264A1
公开(公告)日：2009-07-16
申请号：US12014581
申请日：2008-01-15
申请人： Jacek Korec , Shuming Xu , Christopher Boguslaw Kocon
发明人： Jacek Korec , Shuming Xu , Christopher Boguslaw Kocon
IPC分类号： H01L27/06 , H01L29/872
CPC分类号： H01L27/0727 , H01L29/0696 , H01L29/0878 , H01L29/1095 , H01L29/40 , H01L29/41741 , H01L29/4175 , H01L29/41758 , H01L29/41766 , H01L29/4933 , H01L29/7806 , H01L29/782 , H01L29/872
摘要： A semiconductor device includes a substrate having a first conductivity type and a semiconductor layer formed over the substrate and having lower and upper surfaces. A laterally diffused metal-oxide-semiconductor (LDMOS) transistor device is formed over the substrate and includes a source region of the first conductivity type and a drain extension region of the first conductivity type formed in the semiconductor layer proximate the upper surface of the semiconductor layer, and a drain contact electrically connecting the drain extension region to the substrate. A Schottky diode is formed over the substrate and includes at least one doped region of the first conductivity type formed in the semiconductor layer proximate to the upper surface, an anode contact forming a Schottky barrier with the at least one doped region, and a cathode contact laterally spaced from the anode contact and electrically connecting at least one doped region to the substrate.
摘要翻译：半导体器件包括具有第一导电类型的衬底和形成在衬底上并具有下表面和上表面的半导体层。横向扩散的金属氧化物半导体（LDMOS）晶体管器件形成在衬底上，并且包括第一导电类型的源极区域和形成在靠近半导体的上表面的半导体层中的第一导电类型的漏极延伸区域以及将漏极延伸区域与衬底电连接的漏极接触。肖特基二极管形成在衬底之上，并且包括形成在靠近上表面的半导体层中的至少一个第一导电类型的掺杂区域，形成具有至少一个掺杂区域的肖特基势垒的阳极接触器和阴极接触器与阳极接触件横向间隔开并将至少一个掺杂区域电连接到衬底。

6. 发明授权

US08680611B2 Field effect transistor and schottky diode structures 有权
标题翻译：场效应晶体管和肖特基二极管结构
公开(公告)号：US08680611B2
公开(公告)日：2014-03-25
申请号：US13600184
申请日：2012-08-30
申请人： Christopher Boguslaw Kocon , Steven Sapp , Paul Thorup , Dean Probst , Robert Herrick , Becky Losee , Hamza Yilmaz , Christopher Lawrence Rexer , Daniel Calafut
发明人： Christopher Boguslaw Kocon , Steven Sapp , Paul Thorup , Dean Probst , Robert Herrick , Becky Losee , Hamza Yilmaz , Christopher Lawrence Rexer , Daniel Calafut
IPC分类号： H01L29/76
CPC分类号： H01L29/7827 , H01L21/26586 , H01L27/0629 , H01L29/0619 , H01L29/0847 , H01L29/0869 , H01L29/1095 , H01L29/407 , H01L29/41766 , H01L29/42368 , H01L29/66666 , H01L29/66719 , H01L29/66727 , H01L29/66734 , H01L29/7806 , H01L29/7811 , H01L29/7813 , H01L29/7828 , H01L29/872 , H01L2924/13091
摘要： In accordance with an embodiment a structure can include a monolithically integrated trench field-effect transistor (FET) and Schottky diode. The structure can include a first gate trench extending into a semiconductor region, a second gate trench extending into the semiconductor region, and a source region flanking a side of the first gate trench. The source region can have a substantially triangular shape, and a contact opening extending into the semiconductor region between the first gate trench and the second gate trench. The structure can include a conductor layer disposed in the contact opening to electrically contact the source region along at least a portion of a slanted sidewall of the source region, and the semiconductor region along a bottom portion of the contact opening. The conductor layer can form a Schottky contact with the semiconductor region.
摘要翻译：根据实施例，结构可以包括单片集成沟槽场效应晶体管（FET）和肖特基二极管。该结构可以包括延伸到半导体区域的第一栅极沟槽，延伸到半导体区域中的第二栅极沟槽和在第一栅极沟槽的侧面的源极区域。源极区域可以具有基本上三角形的形状，以及延伸到第一栅极沟槽和第二栅极沟槽之间的半导体区域中的接触开口。该结构可以包括设置在接触开口中的导体层，以沿着源极区域的倾斜侧壁的至少一部分以及沿接触开口的底部部分的半导体区域电接触源极区域。导体层可与半导体区形成肖特基接触。

7. 发明申请

US20120319197A1 FIELD EFFECT TRANSISTOR AND SCHOTTKY DIODE STRUCTURES 有权
标题翻译：场效应晶体管和肖特基二极管结构
公开(公告)号：US20120319197A1
公开(公告)日：2012-12-20
申请号：US13600184
申请日：2012-08-30
申请人： Christopher Boguslaw Kocon , Steven Sapp , Paul Thorup , Dean Probst , Robert Herrick , Becky Losee , Hamza Yilmaz , Christopher Lawrence Rexer , Daniel Calafut
发明人： Christopher Boguslaw Kocon , Steven Sapp , Paul Thorup , Dean Probst , Robert Herrick , Becky Losee , Hamza Yilmaz , Christopher Lawrence Rexer , Daniel Calafut
IPC分类号： H01L29/78
CPC分类号： H01L29/7827 , H01L21/26586 , H01L27/0629 , H01L29/0619 , H01L29/0847 , H01L29/0869 , H01L29/1095 , H01L29/407 , H01L29/41766 , H01L29/42368 , H01L29/66666 , H01L29/66719 , H01L29/66727 , H01L29/66734 , H01L29/7806 , H01L29/7811 , H01L29/7813 , H01L29/7828 , H01L29/872 , H01L2924/13091
摘要： In accordance with an embodiment a structure can include a monolithically integrated trench field-effect transistor (FET) and Schottky diode. The structure can include a first gate trench extending into a semiconductor region, a second gate trench extending into the semiconductor region, and a source region flanking a side of the first gate trench. The source region can have a substantially triangular shape, and a contact opening extending into the semiconductor region between the first gate trench and the second gate trench. The structure can include a conductor layer disposed in the contact opening to electrically contact the source region along at least a portion of a slanted sidewall of the source region, and the semiconductor region along a bottom portion of the contact opening. The conductor layer can form a Schottky contact with the semiconductor region.
摘要翻译：根据实施例，结构可以包括单片集成沟槽场效应晶体管（FET）和肖特基二极管。该结构可以包括延伸到半导体区域的第一栅极沟槽，延伸到半导体区域中的第二栅极沟槽和在第一栅极沟槽的侧面的源极区域。源极区域可以具有基本上三角形的形状，以及延伸到第一栅极沟槽和第二栅极沟槽之间的半导体区域中的接触开口。该结构可以包括设置在接触开口中的导体层，以沿着源极区域的倾斜侧壁的至少一部分以及沿接触开口的底部部分的半导体区域电接触源极区域。导体层可与半导体区形成肖特基接触。

8. 发明申请

US20120133016A1 LATERAL POWER DIODE WITH SELF-BIASING ELECTRODE 有权
标题翻译：具有自偏电极的侧向功率二极管
公开(公告)号：US20120133016A1
公开(公告)日：2012-05-31
申请号：US13365983
申请日：2012-02-03
申请人： Christopher Boguslaw Kocon
发明人： Christopher Boguslaw Kocon
IPC分类号： H01L29/872 , H01L21/329
CPC分类号： H01L29/407 , H01L29/0634 , H01L29/0653 , H01L29/0696 , H01L29/0878 , H01L29/41766 , H01L29/7816 , H01L29/7824
摘要： A schottky diode includes a drift region of a first conductivity type and a lightly doped silicon region of the first conductivity type in the drift region. A conductor layer is over and in contact with the lightly doped silicon region to form a schottky contact with the lightly doped silicon region. A highly doped silicon region of the first conductivity type is in the drift region and is laterally spaced from the lightly doped silicon region such that upon biasing the schottky diode in a conducting state, a current flows laterally between the lightly doped silicon region and the highly doped silicon region through the drift region. A plurality of trenches extend into the drift region perpendicular to the current flow. Each trench has a dielectric layer lining at least a portion of the trench sidewalls and at least one conductive electrode.
摘要翻译：肖特基二极管包括漂移区中第一导电类型的漂移区和第一导电类型的轻掺杂硅区。导体层与轻掺杂的硅区域结合并接触，以与轻掺杂的硅区域形成肖特基接触。第一导电类型的高掺杂硅区域在漂移区域中并且与轻掺杂硅区域横向间隔开，使得在将肖特基二极管偏置在导通状态中时，电流在轻掺杂硅区域和高度掺杂的硅区域之间横向流动掺杂硅区域通过漂移区域。多个沟槽延伸到垂直于电流的漂移区域中。每个沟槽具有内衬至少一部分沟槽侧壁和至少一个导电电极的电介质层。

9. 发明申请

US20110177662A1 Method of Forming Trench-Gate Field Effect Transistors 有权
标题翻译：形成沟槽栅场效应晶体管的方法
公开(公告)号：US20110177662A1
公开(公告)日：2011-07-21
申请号：US13075091
申请日：2011-03-29
申请人： Hamza Yilmaz , Daniel Calafut , Christopher Boguslaw Kocon , Steven P. Sapp , Dean E. Probst , Nathan L. Kraft , Thomas E. Grebs , Rodney S. Ridley , Gary M. Dolny , Bruce D. Marchant , Joseph A. Yedinak
发明人： Hamza Yilmaz , Daniel Calafut , Christopher Boguslaw Kocon , Steven P. Sapp , Dean E. Probst , Nathan L. Kraft , Thomas E. Grebs , Rodney S. Ridley , Gary M. Dolny , Bruce D. Marchant , Joseph A. Yedinak
IPC分类号： H01L21/336
CPC分类号： H01L29/7827 , H01L21/26586 , H01L29/0878 , H01L29/402 , H01L29/407 , H01L29/41766 , H01L29/4236 , H01L29/42368 , H01L29/66666 , H01L29/66727 , H01L29/66734 , H01L29/7806 , H01L29/7811 , H01L29/7813 , H01L29/872
摘要： A method of forming a field effect transistor includes: forming a trench in a semiconductor region; forming a shield electrode in the trench; performing an angled sidewall implant of impurities of the first conductivity type to form a channel enhancement region adjacent the trench; forming a body region of a second conductivity type in the semiconductor region; and forming a source region of the first conductivity type in the body region, the source region and an interface between the body region and the semiconductor region defining a channel region therebetween, the channel region extending along the trench sidewall. The channel enhancement region partially extends into a lower portion of the channel region to thereby reduce a resistance of the channel region.
摘要翻译：形成场效应晶体管的方法包括：在半导体区域中形成沟槽; 在沟槽中形成屏蔽电极; 执行第一导电类型的杂质的成角度的侧壁注入，以形成与沟槽相邻的沟道增强区域; 在半导体区域中形成第二导电类型的体区; 并且在所述体区域中形成所述第一导电类型的源极区域，所述源极区域和所述体区域与所述半导体区域之间的界面在所述体区域中形成沟道区域，所述沟道区域沿着所述沟槽侧壁延伸。沟道增强区域部分地延伸到沟道区的下部，从而减小沟道区的电阻。

10. 发明申请

US20100258862A1 TRENCH-GATE FIELD EFFECT TRANSISTOR WITH CHANNEL ENHANCEMENT REGION AND METHODS OF FORMING THE SAME 有权
标题翻译：具有通道增强区域的TRENCH-GATE场效应晶体管及其形成方法
公开(公告)号：US20100258862A1
公开(公告)日：2010-10-14
申请号：US12698746
申请日：2010-02-02
申请人： Hamza Yilmaz , Daniel Calafut , Christopher Boguslaw Kocon , Steven P. Sapp , Dean E. Probst , Nathan L. Kraft , Thomas E. Grebs , Rodney S. Ridley , Gary M. Dolny , Bruce D. Marchant , Joseph A. Yedinak
发明人： Hamza Yilmaz , Daniel Calafut , Christopher Boguslaw Kocon , Steven P. Sapp , Dean E. Probst , Nathan L. Kraft , Thomas E. Grebs , Rodney S. Ridley , Gary M. Dolny , Bruce D. Marchant , Joseph A. Yedinak
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/7827 , H01L21/26586 , H01L29/0878 , H01L29/402 , H01L29/407 , H01L29/41766 , H01L29/4236 , H01L29/42368 , H01L29/66666 , H01L29/66727 , H01L29/66734 , H01L29/7806 , H01L29/7811 , H01L29/7813 , H01L29/872
摘要： A field effect transistor includes a body region of a first conductivity type in a semiconductor region of a second conductivity type. A gate trench extends through the body region and terminating within the semiconductor region. A source region of the second conductivity type extends in the body region adjacent the gate trench. The source region and an interface between the body region and the semiconductor region define a channel region therebetween which extends along the gate trench sidewall. A channel enhancement region of the second conductivity type is formed adjacent the gate trench. The channel enhancement region partially extends into a lower portion of the channel region to thereby reduce a resistance of the channel region.
摘要翻译：场效应晶体管包括在第二导电类型的半导体区域中的第一导电类型的体区。栅极沟槽延伸穿过身体区域并终止在半导体区域内。第二导电类型的源极区域在与栅极沟槽相邻的体区中延伸。源极区域和主体区域和半导体区域之间的界面限定其间沿着栅极沟槽侧壁延伸的沟道区域。第二导电类型的沟道增强区域形成在栅极沟槽附近。沟道增强区域部分地延伸到沟道区的下部，从而减小沟道区的电阻。

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