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1. 发明申请

US20080206681A1 METHOD FOR PRODUCING A STRUCTURE ON THE SURFACE OF A SUBSTRATE 有权
标题翻译：生产基材表面结构的方法
公开(公告)号：US20080206681A1
公开(公告)日：2008-08-28
申请号：US12114948
申请日：2008-05-05
申请人： Christoph Nolscher , Dietmar Temmler , Peter Moll
发明人： Christoph Nolscher , Dietmar Temmler , Peter Moll
IPC分类号： G03F7/20 , H01B13/00
CPC分类号： H01L21/31144 , H01L21/0337 , H01L21/0338 , H01L21/3086 , H01L21/3088
摘要： The present invention relates to a method for producing a structure serving as an etching mask on the surface of a substrate. In this case, a first method involves forming a first partial structure on the surface of the substrate, which has structure elements that are arranged regularly and are spaced apart essentially identically. A second method involves forming spacers on the surface of the substrate, which adjoin sidewalls of the structure elements of the first partial structure, cutouts being provided between the spacers. A third method step involves introducing filling material into the cutouts between the spacers, a surface of the spacers being uncovered. A fourth method step involves removing the spacers in order to form a second partial structure having the filling material and having structure elements that are arranged regularly and are spaced apart essentially identically. The structure to be produced is composed of the first partial structure and the second partial structure.
摘要翻译：本发明涉及一种在基板表面上制造用作蚀刻掩模的结构的方法。在这种情况下，第一种方法包括在衬底的表面上形成第一部分结构，其具有规则地排列并且基本相同地间隔开的结构元件。第二种方法包括在衬底的表面上形成间隔物，其邻接第一部分结构的结构元件的侧壁，在间隔物之间提供切口。第三种方法步骤包括将填充材料引入间隔件之间的切口中，间隔件的表面未被覆盖。第四种方法步骤包括去除间隔物，以便形成具有填充材料的第二部分结构，并具有规则排列的结构元件并且基本相同地间隔开。要制造的结构由第一部分结构和第二部分结构组成。

2. 发明授权

US07084029B2 Method for fabricating a hole trench storage capacitor in a semiconductor substrate, and hole trench storage capacitor 失效
标题翻译：在半导体衬底中制造空穴沟槽存储电容器的方法和空穴沟槽存储电容器
公开(公告)号：US07084029B2
公开(公告)日：2006-08-01
申请号：US10948574
申请日：2004-09-24
申请人： Srivatsa Kundalgurki , Dietmar Temmler , Hans-Peter Moll , Joerg Wiedemann
发明人： Srivatsa Kundalgurki , Dietmar Temmler , Hans-Peter Moll , Joerg Wiedemann
IPC分类号： H01L21/8242
CPC分类号： H01L27/10861 , H01L27/10867 , H01L27/10873
摘要： To fabricate a hole trench storage capacitor having an inner electrode, which is formed in a hole trench, and an outer electrode, which is formed in an electrode section, surrounding the hole trench in a lower section, of the semiconductor substrate, the inner electrode is continued above the substrate surface of the semiconductor substrate. Then, an additional layer, which widens the semiconductor substrate, is grown onto the substrate surface by an epitaxy process. A transition surface for contact-connection of the inner electrode and at least a part of an insulation collar is formed above the original substrate surface, thereby increasing the size of a surface area of the hole trench storage capacitor, which can be used for charge storage, while using the same aspect ratio for an etch used to form the hole trench.
摘要翻译：为了制造在半导体衬底中形成有形成在孔沟中的内部电极和在电极部中形成的包围下部的孔沟的外部电极的空穴沟槽存储电容器，内部电极继续在半导体衬底的衬底表面上方。然后，通过外延工艺将扩大半导体衬底的附加层生长到衬底表面上。在原始基板表面上形成内电极和绝缘套环的至少一部分的接触连接的过渡表面，从而增加可用于电荷存储的空穴沟槽存储电容器的表面积的尺寸而对于用于形成孔沟槽的蚀刻使用相同的纵横比。

3. 发明授权

US08003538B2 Method for producing a structure on the surface of a substrate 有权
标题翻译：在基板表面上制造结构的方法
公开(公告)号：US08003538B2
公开(公告)日：2011-08-23
申请号：US12114948
申请日：2008-05-05
申请人： Christoph Nölscher , Dietmar Temmler , Peter Moll
发明人： Christoph Nölscher , Dietmar Temmler , Peter Moll
IPC分类号： H01L21/302
CPC分类号： H01L21/31144 , H01L21/0337 , H01L21/0338 , H01L21/3086 , H01L21/3088
摘要： The present invention relates to a method for producing a structure serving as an etching mask on the surface of a substrate. In this case, a first method involves forming a first partial structure on the surface of the substrate, which has structure elements that are arranged regularly and are spaced apart essentially identically. A second method involves forming spacers on the surface of the substrate, which adjoin sidewalls of the structure elements of the first partial structure, cutouts being provided between the spacers. A third method step involves introducing filling material into the cutouts between the spacers, a surface of the spacers being uncovered. A fourth method step involves removing the spacers in order to form a second partial structure having the filling material and having structure elements that are arranged regularly and are spaced apart essentially identically. The structure to be produced is composed of the first partial structure and the second partial structure.
摘要翻译：本发明涉及一种在基板表面上制造用作蚀刻掩模的结构的方法。在这种情况下，第一种方法包括在衬底的表面上形成第一部分结构，其具有规则地排列并且基本相同地间隔开的结构元件。第二种方法包括在衬底的表面上形成间隔物，其邻接第一部分结构的结构元件的侧壁，在间隔物之间提供切口。第三种方法步骤包括将填充材料引入间隔件之间的切口中，间隔件的表面未被覆盖。第四种方法步骤包括去除间隔物，以便形成具有填充材料的第二部分结构，并具有规则排列的结构元件并且基本相同地间隔开。要制造的结构由第一部分结构和第二部分结构组成。

4. 发明授权

US07368385B2 Method for producing a structure on the surface of a substrate 有权
标题翻译：在基板表面上制造结构的方法
公开(公告)号：US07368385B2
公开(公告)日：2008-05-06
申请号：US11182066
申请日：2005-07-15
申请人： Christoph Nölscher , Dietmar Temmler , Peter Moll
发明人： Christoph Nölscher , Dietmar Temmler , Peter Moll
IPC分类号： H01L21/311
CPC分类号： H01L21/31144 , H01L21/0337 , H01L21/0338 , H01L21/3086 , H01L21/3088
摘要： The present invention relates to a method for producing a structure serving as an etching mask on the surface of a substrate. In this case, a first method involves forming a first partial structure on the surface of the substrate, which has structure elements that are arranged regularly and are spaced apart essentially identically. A second method involves forming spacers on the surface of the substrate, which adjoin sidewalls of the structure elements of the first partial structure, cutouts being provided between the spacers. A third method step involves introducing filling material into the cutouts between the spacers, a surface of the spacers being uncovered. A fourth method step involves removing the spacers in order to form a second partial structure having the filling material and having structure elements that are arranged regularly and are spaced apart essentially identically. The structure to be produced is composed of the first partial structure and the second partial structure.
摘要翻译：本发明涉及一种在基板表面上制造用作蚀刻掩模的结构的方法。在这种情况下，第一种方法包括在衬底的表面上形成第一部分结构，其具有规则地排列并且基本相同地间隔开的结构元件。第二种方法包括在衬底的表面上形成间隔物，其邻接第一部分结构的结构元件的侧壁，在间隔物之间提供切口。第三种方法步骤包括将填充材料引入间隔件之间的切口中，间隔件的表面未被覆盖。第四种方法步骤包括去除间隔物，以便形成具有填充材料的第二部分结构，并具有规则排列的结构元件并且基本相同地间隔开。要制造的结构由第一部分结构和第二部分结构组成。

5. 发明申请

US20060024621A1 Method of producing a structure on the surface of a substrate 有权
标题翻译：在基板的表面上制造结构的方法
公开(公告)号：US20060024621A1
公开(公告)日：2006-02-02
申请号：US11182066
申请日：2005-07-15
申请人： Christoph Nölscher , Dietmar Temmler , Peter Moll
发明人： Christoph Nölscher , Dietmar Temmler , Peter Moll
IPC分类号： G03F7/00
CPC分类号： H01L21/31144 , H01L21/0337 , H01L21/0338 , H01L21/3086 , H01L21/3088
摘要： The present invention relates to a method for producing a structure serving as an etching mask on the surface of a substrate. In this case, a first method involves forming a first partial structure on the surface of the substrate, which has structure elements that are arranged regularly and are spaced apart essentially identically. A second method involves forming spacers on the surface of the substrate, which adjoin sidewalls of the structure elements of the first partial structure, cutouts being provided between the spacers. A third method step involves introducing filling material into the cutouts between the spacers, a surface of the spacers being uncovered. A fourth method step involves removing the spacers in order to form a second partial structure having the filling material and having structure elements that are arranged regularly and are spaced apart essentially identically. The structure to be produced is composed of the first partial structure and the second partial structure.
摘要翻译：本发明涉及一种在基板表面上制造用作蚀刻掩模的结构的方法。在这种情况下，第一种方法包括在衬底的表面上形成第一部分结构，其具有规则地排列并且基本相同地间隔开的结构元件。第二种方法包括在衬底的表面上形成间隔物，其邻接第一部分结构的结构元件的侧壁，在间隔物之间提供切口。第三种方法步骤包括将填充材料引入间隔件之间的切口中，间隔件的表面未被覆盖。第四种方法步骤包括去除间隔物，以便形成具有填充材料的第二部分结构，并具有规则排列的结构元件并且基本相同地间隔开。要制造的结构由第一部分结构和第二部分结构组成。

6. 发明申请

US20050093049A1 Method for fabricating a hole trench storage capacitor in a semiconductor substrate, and hole trench storage capacitor 失效
标题翻译：在半导体衬底中制造空穴沟槽存储电容器的方法和空穴沟槽存储电容器
公开(公告)号：US20050093049A1
公开(公告)日：2005-05-05
申请号：US10948574
申请日：2004-09-24
申请人： Srivatsa Kundalgurki , Dietmar Temmler , Hans-Peter Moll , Joerg Wiedemann
发明人： Srivatsa Kundalgurki , Dietmar Temmler , Hans-Peter Moll , Joerg Wiedemann
IPC分类号： H01L21/20 , H01L21/8242 , H01L29/76
CPC分类号： H01L27/10861 , H01L27/10867 , H01L27/10873
摘要： To fabricate a hole trench storage capacitor having an inner electrode, which is formed in a hole trench, and an outer electrode, which is formed in an electrode section, surrounding the hole trench in a lower section, of the semiconductor substrate, the inner electrode is continued above the substrate surface of the semiconductor substrate. Then, an additional layer, which widens the semiconductor substrate, is grown onto the substrate surface by an epitaxy process. A transition surface for contact-connection of the inner electrode and at least a part of an insulation collar is formed above the original substrate surface, thereby increasing the size of a surface area of the hole trench storage capacitor, which can be used for charge storage, while using the same aspect ratio for an etch used to form the hole trench.
摘要翻译：为了制造在半导体衬底中形成有形成在孔沟中的内部电极和在电极部中形成的包围下部的孔沟的外部电极的空穴沟槽存储电容器，内部电极继续在半导体衬底的衬底表面上方。然后，通过外延工艺将扩大半导体衬底的附加层生长到衬底表面上。在原始基板表面上形成内电极和绝缘套环的至少一部分的接触连接的过渡表面，从而增加可用于电荷存储的空穴沟槽存储电容器的表面积的尺寸而对于用于形成孔沟槽的蚀刻使用相同的纵横比。

7. 发明申请

US20060231918A1 Field effect transistor and method for the production thereof 审中-公开
标题翻译：场效应晶体管及其制造方法
公开(公告)号：US20060231918A1
公开(公告)日：2006-10-19
申请号：US10482328
申请日：2002-06-19
申请人： Martin Popp , Frank Richter , Dietmar Temmler , Andreas Wich-Glasen
发明人： Martin Popp , Frank Richter , Dietmar Temmler , Andreas Wich-Glasen
IPC分类号： H01L29/00
CPC分类号： H01L29/7851 , H01L21/76229 , H01L21/823481 , H01L29/0653 , H01L29/66651
摘要： A transistor is provided which advantageously utilizes a part of the area which, in conventional transistors, is provided for the isolation between the transistors. In this case, the channel width can be enlarged in a self-aligned manner without the risk of short circuits. The field-effect transistor according to the invention has the advantage that it is possible to ensure a significant increase in the effective channel width for the forward current ION compared with previously used, conventional transistor structures, without having to accept a reduction of the integration density that can be attained. Thus, by way of example, the forward current ION can be increased by up to 50%, without having to alter the arrangement of the active regions or of the trench isolation.
摘要翻译：提供了一种晶体管，其有利地利用了在常规晶体管中提供用于晶体管之间的隔离的区域的一部分。在这种情况下，可以以自对准的方式扩大通道宽度，而不会出现短路的风险。根据本发明的场效应晶体管的优点在于，与先前使用的传统晶体管结构相比，可以确保正向电流ION的有效沟道宽度的显着增加，而不必接受集成密度的降低可以实现。因此，作为示例，正向电流I ON ON可以增加高达50％，而不必改变有源区域或沟槽隔离的布置。

8. 发明申请

US20060003560A1 Method for fabricating a shadow mask in a trench of a microelectronic or micromechanical structure 有权
标题翻译：用于在微电子或微机械结构的沟槽中制造荫罩的方法
公开(公告)号：US20060003560A1
公开(公告)日：2006-01-05
申请号：US11154943
申请日：2005-06-17
申请人： Jorn Regul , Dietmar Temmler
发明人： Jorn Regul , Dietmar Temmler
IPC分类号： H01L21/265 , H01L21/425 , H01L21/302
CPC分类号： H01L21/26586 , B81B2203/033 , B81B2203/0392 , B81C1/00404 , B81C2201/0159 , H01L21/32139 , H01L27/10867 , Y10S438/944
摘要： The present invention provides a method for fabricating a shadow mask in a trench of a microelectronic or micromechanical structure, comprising the steps of: providing a trench in the microelectronic or micromechanical structure; providing a partial filling in the trench; providing a first liner mask layer on the partial filling; providing a sacrificial filling on the liner mask layer to completely fill the trench; shallow etching back of the sacrificial filling into the trench; forming a first mask on the top side of the sacrificial filling in the trench; removing a subregion of the sacrificial filling in the trench using the first mask; and optionally removing a subregion of the first liner mask layer below it on the partial filling, the remaining subregion of the sacrificial filling in the trench serving as a second mask.
摘要翻译：本发明提供了一种在微电子或微机械结构的沟槽中制造荫罩的方法，包括以下步骤：在微电子或微机械结构中提供沟槽; 提供在沟槽中的部分填充; 在部分填充上提供第一衬垫掩模层; 在衬垫掩模层上提供牺牲填充物以完全填充沟槽; 将蚀刻后的浅层刻蚀成沟槽; 在沟槽中的牺牲填充物的顶侧上形成第一掩模; 使用所述第一掩模去除所述沟槽中的牺牲填充的子区域; 并且可选地在部分填充上去除其下方的第一衬垫掩模层的子区域，在沟槽中牺牲填充的剩余子区域用作第二掩模。

9. 发明授权

US07535044B2 Semiconductor device, method for manufacturing a semiconductor device and mask for manufacturing a semiconductor device 失效
标题翻译：半导体装置，半导体装置的制造方法以及半导体装置的制造掩模
公开(公告)号：US07535044B2
公开(公告)日：2009-05-19
申请号：US11700547
申请日：2007-01-31
申请人： Christoph Noelscher , Dietmar Temmler
发明人： Christoph Noelscher , Dietmar Temmler
IPC分类号： H01L27/108
CPC分类号： H01L21/764 , G03F1/36 , H01L27/0207 , H01L27/105
摘要： A semiconductor device with a substrate includes a structure. The structure has a first part and a second part. At least one section of the edge of the first part of the structure is at an essential constant distance measured parallel to the substrate to a first section of an edge of a second structure. At least one section of the edge of the second part of the structure is lined with an edge of a second section of the same second section. The first section of the edge of the second structure and a second section of the edge of the second structure merge at least at one point, whereby the angle between the tangents of the edges of the first and second section of the second structure is less than 90°. The structure and the second structure are distanced by a spacer structure.
摘要翻译：具有衬底的半导体器件包括结构。该结构具有第一部分和第二部分。结构的第一部分的边缘的至少一个部分是平行于衬底测量到第二结构的边缘的第一部分的基本恒定距离。结构的第二部分的边缘的至少一个部分衬有同一第二部分的第二部分的边缘。第二结构的边缘的第一部分和第二结构的边缘的第二部分至少在一点处合并，由此第二结构的第一和第二部分的边缘的切线之间的角度小于 90°。结构和第二结构由间隔结构隔开。

10. 发明授权

US07265025B2 Method for filling trench and relief geometries in semiconductor structures 有权
标题翻译：在半导体结构中填充沟槽和浮雕几何的方法
公开(公告)号：US07265025B2
公开(公告)日：2007-09-04
申请号：US11010186
申请日：2004-12-10
申请人： Dietmar Temmler , Barbara Lorenz , Daniel Koehler , Matthias Foerster
发明人： Dietmar Temmler , Barbara Lorenz , Daniel Koehler , Matthias Foerster
IPC分类号： H01L21/76
CPC分类号： H01L21/76877 , H01L21/31116 , H01L21/76224 , H01L21/76837 , H01L21/76843 , H01L21/76865 , H01L27/10861 , H01L27/1087 , H01L28/60 , H01L28/84 , H01L29/66181
摘要： A method teaches how to fill trench structures formed in a semiconductor substrate. The trench structures are coated in a first deposition process with a first primary filling layer with a high conformity and minimal roughness. A V etching reaching down to a predetermined depth of the trench structure is subsequently performed in order to produce a V-profile.
摘要翻译：一种方法教导了如何填充形成在半导体衬底中的沟槽结构。沟槽结构在具有高一致性和最小粗糙度的第一初级填充层的第一沉积工艺中被涂覆。随后进行达到沟槽结构的预定深度的V蚀刻，以便产生V形轮廓。

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