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1. 发明申请

US20070215863A1 Fabricating apparatus with doped organic semiconductors 审中-公开
标题翻译：掺杂有机半导体制造装置
公开(公告)号：US20070215863A1
公开(公告)日：2007-09-20
申请号：US11375833
申请日：2006-03-15
申请人： Christian Kloc , Oleg Mitrofanov , Theo Siegrist , John Wikberg , David Lang
发明人： Christian Kloc , Oleg Mitrofanov , Theo Siegrist , John Wikberg , David Lang
IPC分类号： H01L29/08 , H01L35/24 , H01L51/00
CPC分类号： H01L51/5052 , H01L21/268 , H01L51/5253
摘要： A method includes forming a semiconducting region including polyaromatic molecules on a surface of a substrate. The method also includes forming over the region a substantially oxygen impermeable dielectric layer. The act of forming a semiconducting region includes exposing the molecules to oxygen while exposing the molecules to visible or ultraviolet light.
摘要翻译：一种方法包括在衬底的表面上形成包括多芳族分子的半导体区域。该方法还包括在该区域上形成基本上不透氧的介电层。形成半导体区域的行为包括将分子暴露于氧，同时将分子暴露于可见光或紫外光。

2. 发明授权

US07670887B2 Field-effect transistors with weakly coupled layered inorganic semiconductors 失效
标题翻译：具有弱耦合层状无机半导体的场效应晶体管
公开(公告)号：US07670887B2
公开(公告)日：2010-03-02
申请号：US11732939
申请日：2007-04-04
申请人： Ernst Bucher , Michael E. Gershenson , Christian Kloc , Vitaly Podzorov
发明人： Ernst Bucher , Michael E. Gershenson , Christian Kloc , Vitaly Podzorov
IPC分类号： H01L21/00
CPC分类号： H01L29/66742 , H01L29/26 , H01L29/7839 , H01L29/786 , H01L29/78681
摘要： A field-effect transistor includes source, drain, and gate electrodes; a crystalline or polycrystalline layer of inorganic semiconductor; and a dielectric layer. The layer of inorganic semiconductor has an active channel portion physically extending from the source electrode to the drain electrode. The inorganic semiconductor has a stack of 2-dimensional layers in which intra-layer bonding forces are covalent and/or ionic. Adjacent ones of the layers are bonded together by forces substantially weaker than covalent and ionic bonding forces. The dielectric layer is interposed between the gate electrode and the layer of inorganic semiconductor material. The gate electrode is configured to control a conductivity of an active channel part of the layer of inorganic semiconductor.
摘要翻译：场效应晶体管包括源极，漏极和栅电极; 无机半导体的结晶或多晶层; 和电介质层。无机半导体层具有从源电极物理延伸到漏电极的有源沟道部分。无机半导体具有其中层内结合力是共价和/或离子的二维层叠。相邻的层通过基本上弱于共价键和离子键的力结合在一起。介电层介于栅电极和无机半导体材料层之间。栅电极被配置为控制无机半导体层的有源沟道部分的导电性。

3. 发明授权

US07361929B2 Field-effect transistors with weakly coupled layered inorganic semiconductors 失效
标题翻译：具有弱耦合层状无机半导体的场效应晶体管
公开(公告)号：US07361929B2
公开(公告)日：2008-04-22
申请号：US11732936
申请日：2007-04-04
申请人： Ernst Bucher , Michael E. Gershenson , Christian Kloc , Vitaly Podzorov
发明人： Ernst Bucher , Michael E. Gershenson , Christian Kloc , Vitaly Podzorov
IPC分类号： H01L29/10 , H01L29/12
CPC分类号： H01L29/66742 , H01L29/26 , H01L29/7839 , H01L29/786 , H01L29/78681
摘要： A field-effect transistor includes source, drain, and gate electrodes; a crystalline or polycrystalline layer of inorganic semiconductor; and a dielectric layer. The layer of inorganic semiconductor has an active channel portion physically extending from the source electrode to the drain electrode. The inorganic semiconductor has a stack of 2-dimensional layers in which intra-layer bonding forces are covalent and/or ionic. Adjacent ones of the layers are bonded together by forces substantially weaker than covalent and ionic bonding forces. The dielectric layer is interposed between the gate electrode and the layer of inorganic semiconductor material. The gate electrode is configured to control a conductivity of an active channel part of the layer of inorganic semiconductor.
摘要翻译：场效应晶体管包括源极，漏极和栅电极; 无机半导体的结晶或多晶层; 和电介质层。无机半导体层具有从源电极物理延伸到漏电极的有源沟道部分。无机半导体具有其中层内结合力是共价和/或离子的二维层叠。相邻的层通过基本上弱于共价键和离子键的力结合在一起。介电层介于栅电极和无机半导体材料层之间。栅电极被配置为控制无机半导体层的有源沟道部分的导电性。

4. 发明授权

US06885024B2 Devices with organic crystallite active channels 有权
公开(公告)号：US06885024B2
公开(公告)日：2005-04-26
申请号：US10256885
申请日：2002-09-27
申请人： Zhenan Bao , Howard Edan Katz , Christian Kloc
发明人： Zhenan Bao , Howard Edan Katz , Christian Kloc
IPC分类号： H01L35/24 , H01L51/00 , H01L51/40
CPC分类号： H01L51/0545 , H01L51/0012 , H01L51/0014
摘要： A method fabricates ICs in which organic semiconductor crystallites serve as active channels of semiconductor devices. The method includes providing a substrate with a surface that has a preselected pattern of adhesion sites located thereon. The adhesion sites are prepared to adhere crystallites of an organic semiconductor. The method also includes applying a plurality of crystallites of the organic semiconductor to the surface to enable a portion of the applied crystallites to adhere at the prepared adhesion sites.

5. 发明申请

US20050062082A1 Field-effect transistors with weakly coupled layered inorganic semiconductors 失效
标题翻译：具有弱耦合层状无机半导体的场效应晶体管
公开(公告)号：US20050062082A1
公开(公告)日：2005-03-24
申请号：US10939713
申请日：2004-09-13
申请人： Ernst Bucher , Michael Gershenson , Christian Kloc , Vitaly Podzorov
发明人： Ernst Bucher , Michael Gershenson , Christian Kloc , Vitaly Podzorov
IPC分类号： H01L21/336 , H01L29/26 , H01L29/78 , H01L29/786 , H01L29/76
CPC分类号： H01L29/66742 , H01L29/26 , H01L29/7839 , H01L29/786 , H01L29/78681
摘要： A field-effect transistor includes source, drain, and gate electrodes; a crystalline or polycrystalline layer of inorganic semiconductor; and a dielectric layer. The layer of inorganic semiconductor has an active channel portion physically extending from the source electrode to the drain electrode. The inorganic semiconductor has a stack of 2-dimensional layers in which intra-layer bonding forces are covalent and/or ionic. Adjacent ones of the layers are bonded together by forces substantially weaker than covalent and ionic bonding forces. The dielectric layer is interposed between the gate electrode and the layer of inorganic semiconductor material. The gate electrode is configured to control a conductivity of an active channel part of the layer of inorganic semiconductor.
摘要翻译：场效应晶体管包括源极，漏极和栅电极; 无机半导体的结晶或多晶层; 和电介质层。无机半导体层具有从源电极物理延伸到漏电极的有源沟道部分。无机半导体具有其中层内结合力是共价和/或离子的二维层叠。相邻的层通过基本上弱于共价键和离子键的力结合在一起。介电层介于栅电极和无机半导体材料层之间。栅电极被配置为控制无机半导体层的有源沟道部分的导电性。

6. 发明授权

US06284562B1 Thin film transistors 失效
标题翻译：薄膜晶体管
公开(公告)号：US06284562B1
公开(公告)日：2001-09-04
申请号：US09441751
申请日：1999-11-17
申请人： Bertram Joseph Batlogg , Christian Kloc , Jan Hendrik Schon
发明人： Bertram Joseph Batlogg , Christian Kloc , Jan Hendrik Schon
IPC分类号： H01L5140
CPC分类号： H01L51/0545 , H01L27/283 , H01L51/0021 , H01L51/0052 , H01L51/0541
摘要： The specification describes thin film transistor CMOS integrated circuits wherein the semiconductor is an ambipolar organic material. The preferred material is tetracene or pentacene. In these CMOS devices, a single homogeneous layer of tetracene or pentacene can be used in both n-type (inversion) and p-type (accumulation) devices.
摘要翻译：该说明书描述了薄膜晶体管CMOS集成电路，其中半导体是双极有机材料。优选的材料是并四苯或并五苯。在这些CMOS器件中，可以在n型（反转）和p型（累积）器件中使用并四苯或并五苯的单一均匀层。

7. 发明申请

US20070181956A1 Field-effect transistors with weakly coupled layered inorganic semiconductors 失效
标题翻译：具有弱耦合层状无机半导体的场效应晶体管
公开(公告)号：US20070181956A1
公开(公告)日：2007-08-09
申请号：US11732936
申请日：2007-04-04
申请人： Ernst Bucher , Michael Gershenson , Christian Kloc , Vitaly Podzorov
发明人： Ernst Bucher , Michael Gershenson , Christian Kloc , Vitaly Podzorov
IPC分类号： H01L29/76
CPC分类号： H01L29/66742 , H01L29/26 , H01L29/7839 , H01L29/786 , H01L29/78681
摘要： A field-effect transistor includes source, drain, and gate electrodes; a crystalline or polycrystalline layer of inorganic semiconductor; and a dielectric layer. The layer of inorganic semiconductor has an active channel portion physically extending from the source electrode to the drain electrode. The inorganic semiconductor has a stack of 2-dimensional layers in which intra-layer bonding forces are covalent and/or ionic. Adjacent ones of the layers are bonded together by forces substantially weaker than covalent and ionic bonding forces. The dielectric layer is interposed between the gate electrode and the layer of inorganic semiconductor material. The gate electrode is configured to control a conductivity of an active channel part of the layer of inorganic semiconductor.
摘要翻译：场效应晶体管包括源极，漏极和栅电极; 无机半导体的结晶或多晶层; 和电介质层。无机半导体层具有从源电极物理延伸到漏电极的有源沟道部分。无机半导体具有其中层内结合力是共价和/或离子的二维层叠。相邻的层通过基本上弱于共价键和离子键的力结合在一起。介电层介于栅电极和无机半导体材料层之间。栅电极被配置为控制无机半导体层的有源沟道部分的导电性。

8. 发明申请

US20070181938A1 Field-effect transistors with weakly coupled layered inorganic semiconductors 失效
公开(公告)号：US20070181938A1
公开(公告)日：2007-08-09
申请号：US11732939
申请日：2007-04-04
申请人： Ernst Bucher , Michael Gershenson , Christian Kloc , Vitaly Podzorov
发明人： Ernst Bucher , Michael Gershenson , Christian Kloc , Vitaly Podzorov
IPC分类号： H01L29/792
CPC分类号： H01L29/66742 , H01L29/26 , H01L29/7839 , H01L29/786 , H01L29/78681
摘要： A field-effect transistor includes source, drain, and gate electrodes; a crystalline or polycrystalline layer of inorganic semiconductor; and a dielectric layer. The layer of inorganic semiconductor has an active channel portion physically extending from the source electrode to the drain electrode. The inorganic semiconductor has a stack of 2-dimensional layers in which intra-layer bonding forces are covalent and/or ionic. Adjacent ones of the layers are bonded together by forces substantially weaker than covalent and ionic bonding forces. The dielectric layer is interposed between the gate electrode and the layer of inorganic semiconductor material. The gate electrode is configured to control a conductivity of an active channel part of the layer of inorganic semiconductor.

9. 发明授权

US07242041B2 Field-effect transistors with weakly coupled layered inorganic semiconductors 失效
公开(公告)号：US07242041B2
公开(公告)日：2007-07-10
申请号：US10939713
申请日：2004-09-13
申请人： Ernst Bucher , Michael E. Gershenson , Christian Kloc , Vitaly Podzorov
发明人： Ernst Bucher , Michael E. Gershenson , Christian Kloc , Vitaly Podzorov
IPC分类号： H01L29/76
CPC分类号： H01L29/66742 , H01L29/26 , H01L29/7839 , H01L29/786 , H01L29/78681
摘要： A field-effect transistor includes source, drain, and gate electrodes; a crystalline or polycrystalline layer of inorganic semiconductor; and a dielectric layer. The layer of inorganic semiconductor has an active channel portion physically extending from the source electrode to the drain electrode. The inorganic semiconductor has a stack of 2-dimensional layers in which intra-layer bonding forces are covalent and/or ionic. Adjacent ones of the layers are bonded together by forces substantially weaker than covalent and ionic bonding forces. The dielectric layer is interposed between the gate electrode and the layer of inorganic semiconductor material. The gate electrode is configured to control a conductivity of an active channel part of the layer of inorganic semiconductor.

10. 发明申请

US20060289289A1 Purification of organic compositions by sublimation 审中-公开
标题翻译：通过升华纯化有机组合物
公开(公告)号：US20060289289A1
公开(公告)日：2006-12-28
申请号：US11159781
申请日：2005-06-23
申请人： Christian Kloc
发明人： Christian Kloc
IPC分类号： B01D3/00
CPC分类号： B01D7/00
摘要： A method purifies a starting solid or semi-solid organic composition located in a chamber. The method includes heating the starting organic composition such that molecules of one organic molecular species sublime out of the composition and molecules of a desired organic molecular species remain in the composition. The method includes pumping the chamber during the heating step to remove sublimed organic molecules. The method includes then, heating a remaining portion of the composition at one or more higher temperatures such that molecules of the desired organic molecular species sublime from the remaining portion of the composition. A separate region of the chamber is maintained under conditions that cause deposition of sublimed molecules of the desired species during the heating a remaining portion.
摘要翻译：方法净化位于室中的起始固体或半固体有机组合物。该方法包括加热起始有机组合物，使得一种有机分子物质的分子在组合物中升华，并且所需有机分子物质的分子保留在组合物中。该方法包括在加热步骤期间泵送室以除去升华的有机分子。该方法包括然后在一个或多个较高温度下加热组合物的剩余部分，使得所需有机分子物质的分子从组合物的剩余部分中升华。在加热剩余部分期间，室的单独区域保持在导致所需物质的升华分子沉积的条件下。

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