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1. 发明申请

US20060245127A1 CDM ESD event simulation and remediation thereof in application circuits 失效
标题翻译： CDM ESD事件模拟及其在应用电路中的修复
公开(公告)号：US20060245127A1
公开(公告)日：2006-11-02
申请号：US11349358
申请日：2006-02-07
申请人： Choshu Ito , Li Ooi , William Loh
发明人： Choshu Ito , Li Ooi , William Loh
IPC分类号： H02H9/00
CPC分类号： G06F17/5036
摘要： Methods and structure for improved simulation of CDM ESD events and for remediation of circuit designs correcting for previously inexplicable damage to core circuits of an application circuit design caused by such events. Features and aspects hereof note that such previously inexplicable damage to core circuits of an application circuit design is caused by inductive coupling between the non-core circuits and the core circuits of an application circuit design. Improved simulation techniques in accordance with features and aspects hereof may predict where such inductive coupling may cause damage to core circuits. Other features and aspects hereof may alter an application circuit design to provide remediation by automated insertion of additional buffer circuitry to core traces of the core circuitry that may be impacted by such inductive coupling.
摘要翻译：改进CDM ESD事件仿真和修复电路设计的方法和结构，以纠正由此类事件引起的应用电路设计对核心电路的以前不可思议的损害。本发明的特征和方面注意到，对应用电路设计的核心电路的这种以前的莫名其妙的损害是由非核心电路和应用电路设计的核心电路之间的电感耦合引起的。根据其特征和方面的改进的仿真技术可以预测这种感应耦合可能会对核心电路造成损害。本发明的其它特征和方面可以改变应用电路设计，以通过将附加的缓冲电路自动插入到可能受这种电感耦合影响的核心电路的芯线迹来提供补救。

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