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1. 发明授权

US08778115B2 Mask, method of manufacturing mask and apparatus for manufacturing mask 有权
标题翻译：掩模，制造掩模的方法和制造掩模的装置
公开(公告)号：US08778115B2
公开(公告)日：2014-07-15
申请号：US12969365
申请日：2010-12-15
申请人： Choong-Ho Lee , Yoon-Chan Oh , Seung-Ho Choi , Suk-Won Jung , Jung-Soo Rhee
发明人： Choong-Ho Lee , Yoon-Chan Oh , Seung-Ho Choi , Suk-Won Jung , Jung-Soo Rhee
IPC分类号： B29C65/78
CPC分类号： C23C14/042 , B23K26/0846 , H01L51/56
摘要： A method of efficiently manufacturing a large-sized mask is disclosed. In one embodiment, the method includes: 1) providing a first mask member comprising i) a first pattern unit having a plurality of slits, ii) a first buffer unit spaced apart from the first pattern unit, and iii) a first bonding unit interconnecting the first pattern unit and the first buffer unit and 2) providing a second mask member comprising i) a second pattern unit having a plurality of slits, ii) a second buffer unit spaced apart from the second pattern unit, and iii) a second bonding unit interconnecting the second pattern unit and the second buffer unit. The method may further include contacting the first bonding unit and the second bonding unit; and connecting the first mask member to the second mask member while tensile forces are applied to the first mask member and the second mask member.
摘要翻译：公开了一种有效地制造大尺寸掩模的方法。在一个实施例中，该方法包括：1）提供第一掩模构件，其包括i）具有多个狭缝的第一图案单元，ii）与第一图案单元间隔开的第一缓冲单元，以及iii）第一图案单元和第一缓冲单元，以及2）提供第二掩模构件，其包括i）具有多个狭缝的第二图案单元，ii）与第二图案单元间隔开的第二缓冲单元，以及iii）第二粘合将第二图案单元和第二缓冲单元互连的单元。该方法还可以包括使第一接合单元和第二接合单元接触; 以及当所述第一掩模构件和所述第二掩模构件施加张力时，将所述第一掩模构件连接到所述第二掩模构件。

2. 发明申请

US20110139357A1 MASK, METHOD OF MANUFACTURING MASK AND APPARATUS FOR MANUFACTURING MASK 有权
标题翻译：掩模，制造掩模的方法和制造掩模的装置
公开(公告)号：US20110139357A1
公开(公告)日：2011-06-16
申请号：US12969365
申请日：2010-12-15
申请人： Choong-Ho Lee , Yoon-Chan Oh , Seung-Ho Choi , Suk-Won Jung , Jung-Soo Rhee
发明人： Choong-Ho Lee , Yoon-Chan Oh , Seung-Ho Choi , Suk-Won Jung , Jung-Soo Rhee
IPC分类号： B29C65/78 , B29C65/00
CPC分类号： C23C14/042 , B23K26/0846 , H01L51/56
摘要： A method of efficiently manufacturing a large-sized mask is disclosed. In one embodiment, the method includes: 1) providing a first mask member comprising i) a first pattern unit having a plurality of slits, ii) a first buffer unit spaced apart from the first pattern unit, and iii) a first bonding unit interconnecting the first pattern unit and the first buffer unit and 2) providing a second mask member comprising i) a second pattern unit having a plurality of slits, ii) a second buffer unit spaced apart from the second pattern unit, and iii) a second bonding unit interconnecting the second pattern unit and the second buffer unit. The method may further include contacting the first bonding unit and the second bonding unit; and connecting the first mask member to the second mask member while tensile forces are applied to the first mask member and the second mask member.
摘要翻译：公开了一种有效地制造大尺寸掩模的方法。在一个实施例中，该方法包括：1）提供第一掩模构件，其包括i）具有多个狭缝的第一图案单元，ii）与第一图案单元间隔开的第一缓冲单元，以及iii）第一图案单元和第一缓冲单元，以及2）提供第二掩模构件，其包括i）具有多个狭缝的第二图案单元，ii）与第二图案单元间隔开的第二缓冲单元，以及iii）第二粘合将第二图案单元和第二缓冲单元互连的单元。该方法还可以包括使第一接合单元和第二接合单元接触; 以及当所述第一掩模构件和所述第二掩模构件施加张力时，将所述第一掩模构件连接到所述第二掩模构件。

3. 发明授权

US08802488B2 Substrate depositing system and depositing method using the same 有权
标题翻译：基板沉积系统及其沉积方法
公开(公告)号：US08802488B2
公开(公告)日：2014-08-12
申请号：US13179350
申请日：2011-07-08
申请人： Jeong-Ho Yi , Suk-Won Jung , Seung-Ho Choi
发明人： Jeong-Ho Yi , Suk-Won Jung , Seung-Ho Choi
IPC分类号： H01L51/40 , C23C16/00
CPC分类号： H01L21/67184 , C23C14/50 , C23C14/566 , C23C14/568 , H01L21/67196 , H01L21/67742 , H01L21/67748
摘要： A substrate depositing system and a method of using a substrate depositing system. A substrate depositing system includes a load-lock chamber for loading and unloading a substrate, at least one transfer chamber connected to the load-lock chamber and including a substrate transfer device configured to vertically transfer the substrate, and a pair of depositing chambers connected to opposite sides of the at least one transfer chamber and including a depositing source and a pair of substrate fixing devices, the substrate transfer device including a pair of substrate installing members.
摘要翻译：衬底沉积系统和使用衬底沉积系统的方法。衬底沉积系统包括用于装载和卸载衬底的加载锁定室，连接到加载锁定室的至少一个传送室，并且包括被配置为垂直传送衬底的衬底传送装置，以及连接到所述至少一个传送室的相对侧并且包括沉积源和一对基板固定装置，所述基板传送装置包括一对基板安装构件。

4. 发明申请

US20120064728A1 SUBSTRATE DEPOSITING SYSTEM AND DEPOSITING METHOD USING THE SAME 有权
标题翻译：基底沉积系统和使用该沉积系统的沉积方法
公开(公告)号：US20120064728A1
公开(公告)日：2012-03-15
申请号：US13179350
申请日：2011-07-08
申请人： Jeong-Ho Yi , Suk-Won Jung , Seung-Ho Choi
发明人： Jeong-Ho Yi , Suk-Won Jung , Seung-Ho Choi
IPC分类号： H01L21/30 , B05C5/00
CPC分类号： H01L21/67184 , C23C14/50 , C23C14/566 , C23C14/568 , H01L21/67196 , H01L21/67742 , H01L21/67748
摘要： A substrate depositing system and a method of using a substrate depositing system. A substrate depositing system includes a load-lock chamber for loading and unloading a substrate, at least one transfer chamber connected to the load-lock chamber and including a substrate transfer device configured to vertically transfer the substrate, and a pair of depositing chambers connected to opposite sides of the at least one transfer chamber and including a depositing source and a pair of substrate fixing devices, the substrate transfer device including a pair of substrate installing members.
摘要翻译：衬底沉积系统和使用衬底沉积系统的方法。衬底沉积系统包括用于装载和卸载衬底的加载锁定室，连接到加载锁定室的至少一个传送室，并且包括被配置为垂直传送衬底的衬底传送装置，以及连接到所述至少一个传送室的相对侧并且包括沉积源和一对基板固定装置，所述基板传送装置包括一对基板安装构件。

5. 发明申请

US20110146575A1 EVAPORATION SOURCE AND DEPOSITION APPARATUS HAVING THE SAME 审中-公开
标题翻译：蒸发源和沉积装置
公开(公告)号：US20110146575A1
公开(公告)日：2011-06-23
申请号：US12972369
申请日：2010-12-17
申请人： Seung-Ho Choi , Suk-Won Jung , Seung-Ho Myoung , Cheol-Lae Roh
发明人： Seung-Ho Choi , Suk-Won Jung , Seung-Ho Myoung , Cheol-Lae Roh
IPC分类号： C23C16/04 , C23C16/448 , C23C16/00 , C23C16/44
CPC分类号： H01L51/0008 , C23C14/243 , H01L51/56
摘要： An evaporation source is disclosed. In one embodiment, the evaporation source includes: i) a crucible being open on one side thereof and configured to store a deposition material and ii) a nozzle section located on the open side of the crucible and comprising a plurality of nozzles, wherein each of the nozzles has a sidewall configured to spray the deposition material therethrough, wherein the side wall has an inclined portion. The evaporation source also includes i) a heater configured to heat the crucible and ii) a housing configured to accommodate the crucible, the nozzle section, and the heater, wherein the nozzle section has a maximum spray angle less than about 60°.
摘要翻译：公开了一种蒸发源。在一个实施例中，蒸发源包括：i）坩埚在其一侧开口并构造成存储沉积材料，以及ii）位于坩埚敞开侧的喷嘴部分，并且包括多个喷嘴，喷嘴具有被配置为通过其喷射沉积材料的侧壁，其中侧壁具有倾斜部分。蒸发源还包括i）加热器，其被配置为加热坩埚，以及ii）构造成容纳坩埚，喷嘴部分和加热器的壳体，其中喷嘴部分具有小于约60°的最大喷射角度。

6. 发明申请

US20110168553A1 SPUTTERING SYSTEM 失效
标题翻译：喷射系统
公开(公告)号：US20110168553A1
公开(公告)日：2011-07-14
申请号：US12825285
申请日：2010-06-28
申请人： Seung-Ho Choi , Suk-Won Jung , Young-Mook Choi , Hyun-Keun Song
发明人： Seung-Ho Choi , Suk-Won Jung , Young-Mook Choi , Hyun-Keun Song
IPC分类号： C23C14/35
CPC分类号： C23C14/352 , H01J37/32449 , H01J37/3405 , H01J37/3417 , H01J37/345 , H01J37/347
摘要： A sputtering system is disclosed. The sputtering system includes: a first sputter unit including: a first deposition material plate, a second deposition material plate, where the first and second deposition material plates face each other, and a first magnetic field generator disposed behind each of the first deposition material plate and the second deposition material plate, configured to generate a magnetic field, a second sputter unit including: a third deposition material plate, disposed next to the first deposition material plate, a fourth deposition material plate, disposed next to the second deposition plate, where the third and fourth deposition material plates face each other, and a second magnetic field generator disposed behind each of the third deposition material plate and the fourth deposition material plate, configured to generate a magnetic field, a first gas supply pipe disposed between the first and third deposition material plates, configured to discharge gas to the second and fourth deposition material plates, a second gas supply pipe disposed between the second fourth deposition material plates, configured to discharge gas to the first and third deposition material plates, a first substrate support unit, configured to support a first deposition substrate, oriented toward outer edges of the first and second deposition material plates, and a second substrate support unit, configured to support a second deposition substrate, oriented toward outer edges of the third and fourth deposition material plates.
摘要翻译：公开了溅射系统。溅射系统包括：第一溅射单元，包括：第一沉积材料板，第二沉积材料板，其中第一和第二沉积材料板彼此面对;以及第一磁场发生器，其布置在每个第一沉积材料板的后面和第二沉积材料板，被配置为产生磁场;第二溅射单元，包括：第三沉积材料板，设置在第一沉积材料板旁边;第四沉积材料板，设置在第二沉积板旁边，其中所述第三和第四沉积材料板彼此面对;以及第二磁场发生器，设置在每个所述第三沉积材料板和所述第四沉积材料板的后面，被配置为产生磁场;第一气体供给管，设置在所述第一和第二沉积材料板之间，第三沉积材料板，被配置为将气体排放到第二和第四沉积物第二气体供给管，设置在第二第四沉积材料板之间，被配置为将气体排放到第一和第三沉积材料板;第一基板支撑单元，被配置为支撑第一沉积基板，第一和第二沉积材料板和第二衬底支撑单元，其被配置为支撑朝向第三和第四沉积材料板的外边缘定向的第二沉积衬底。

7. 发明授权

US08382966B2 Sputtering system 失效
标题翻译：溅射系统
公开(公告)号：US08382966B2
公开(公告)日：2013-02-26
申请号：US12825285
申请日：2010-06-28
申请人： Seung-Ho Choi , Suk-Won Jung , Young-Mook Choi , Hyun-Keun Song
发明人： Seung-Ho Choi , Suk-Won Jung , Young-Mook Choi , Hyun-Keun Song
IPC分类号： C23C14/35
CPC分类号： C23C14/352 , H01J37/32449 , H01J37/3405 , H01J37/3417 , H01J37/345 , H01J37/347
摘要： A sputtering system is disclosed. The sputtering system includes: a first sputter unit including: a first deposition material plate, a second deposition material plate, where the first and second deposition material plates face each other, and a first magnetic field generator disposed behind each of the first deposition material plate and the second deposition material plate, configured to generate a magnetic field, a second sputter unit including: a third deposition material plate, disposed next to the first deposition material plate, a fourth deposition material plate, disposed next to the second deposition plate, where the third and fourth deposition material plates face each other, and a second magnetic field generator disposed behind each of the third deposition material plate and the fourth deposition material plate, configured to generate a magnetic field, a first gas supply pipe disposed between the first and third deposition material plates, configured to discharge gas to the second and fourth deposition material plates, a second gas supply pipe disposed between the second fourth deposition material plates, configured to discharge gas to the first and third deposition material plates, a first substrate support unit, configured to support a first deposition substrate, oriented toward outer edges of the first and second deposition material plates, and a second substrate support unit, configured to support a second deposition substrate, oriented toward outer edges of the third and fourth deposition material plates.
摘要翻译：公开了溅射系统。溅射系统包括：第一溅射单元，包括：第一沉积材料板，第二沉积材料板，其中第一和第二沉积材料板彼此面对;以及第一磁场发生器，其布置在每个第一沉积材料板的后面和第二沉积材料板，被配置为产生磁场;第二溅射单元，包括：第三沉积材料板，设置在第一沉积材料板旁边;第四沉积材料板，设置在第二沉积板旁边，其中所述第三和第四沉积材料板彼此面对;以及第二磁场发生器，设置在每个所述第三沉积材料板和所述第四沉积材料板的后面，被配置为产生磁场;第一气体供给管，设置在所述第一和第二沉积材料板之间，第三沉积材料板，被配置为将气体排放到第二和第四沉积物第二气体供给管，设置在第二第四沉积材料板之间，被配置为将气体排放到第一和第三沉积材料板;第一基板支撑单元，被配置为支撑第一沉积基板，第一和第二沉积材料板和第二衬底支撑单元，其被配置为支撑朝向第三和第四沉积材料板的外边缘定向的第二沉积衬底。

8. 发明申请

US20110129595A1 Deposition source, deposition apparatus having the same, and method of forming thin film 有权
标题翻译：沉积源，具有该沉积源的沉积设备，以及形成薄膜的方法
公开(公告)号：US20110129595A1
公开(公告)日：2011-06-02
申请号：US12926587
申请日：2010-11-29
申请人： Suk-Won Jung , Seung-Ho Choi , Kang-Il Lee , Hyun-Keun Song , Cheol-Lae Roh
发明人： Suk-Won Jung , Seung-Ho Choi , Kang-Il Lee , Hyun-Keun Song , Cheol-Lae Roh
IPC分类号： C23C16/448 , C23C16/04 , B05D5/12
CPC分类号： C23C14/243 , C23C14/24 , H01L51/001 , H01L51/56
摘要： A deposition source includes a first deposition source section, the first deposition source section being configured to store a deposition material, a second deposition source section, the second deposition source section being separate from the first deposition source section and being configured to store the deposition material, the first and second deposition source sections being configured to alternately supply the deposition material while heating or cooling the deposition material, a feed section configured to receive evaporated deposition material from the first and second deposition source sections, and a nozzle section configured to receive the deposition material from the feed section.
摘要翻译：沉积源包括第一沉积源部分，第一沉积源部分被配置为存储沉积材料，第二沉积源部分，第二沉积源部分与第一沉积源部分分离，并被配置为存储沉积材料第一和第二沉积源部分被配置为在加热或冷却沉积材料的同时交替地供应沉积材料;构造成从第一和第二沉积源部分接收蒸发的沉积材料的进料部分和被配置成接收来自进料部分的沉积材料。

9. 发明授权

US08986783B2 Method of forming thin film from multiple deposition sources 有权
标题翻译：从多个沉积源形成薄膜的方法
公开(公告)号：US08986783B2
公开(公告)日：2015-03-24
申请号：US12926587
申请日：2010-11-29
申请人： Suk-Won Jung , Seung-Ho Choi , Kang-Il Lee , Hyun-Keun Song , Cheol-Lae Roh
发明人： Suk-Won Jung , Seung-Ho Choi , Kang-Il Lee , Hyun-Keun Song , Cheol-Lae Roh
IPC分类号： C23C16/448 , C23C14/24 , H01L51/00 , H01L51/56
CPC分类号： C23C14/243 , C23C14/24 , H01L51/001 , H01L51/56
摘要： A method of depositing a material on a substrate is provided for use in manufacturing electronic and display devices such as semiconductors, liquid crystal displays, and organic light emitting diode displays. A deposition material stored in a first deposition source section is heated to evaporate the deposition material. A second deposition source section, which is separate from the first deposition source section, is cooled. The first deposition source section is cooled, and deposition material stored in a second deposition source section is heated so as to alternately supply evaporated deposition material from the first and second deposition source sections to a feed section. The evaporated deposition material from the feed section is supplied to a nozzle section. A substrate can be provided to receive the evaporated deposition material from the nozzle section. A thin film of deposition material can then be formed on the substrate.
摘要翻译：提供了一种在衬底上沉积材料的方法，用于制造诸如半导体，液晶显示器和有机发光二极管显示器的电子和显示装置。存储在第一沉积源部分中的沉积材料被加热以蒸发沉积材料。与第一沉积源部分分开的第二沉积源部分被冷却。第一沉积源部分被冷却，并且存储在第二沉积源部分中的沉积材料被加热，从而将蒸发的沉积材料从第一和第二沉积源部分交替地供应到进料部分。来自进料部分的蒸发的沉积材料被供应到喷嘴部分。可以提供衬底以从喷嘴部分接收蒸发的沉积材料。然后可以在衬底上形成沉积材料的薄膜。

10. 发明授权

US07622071B2 Apparatus for manufacturing compacted irons of reduced materials comprising fine direct reduced irons and apparatus for manufacturing molten irons using the same 有权
标题翻译：用于制造包括精细直接还原铁的还原材料的压制铁的装置和使用其制造铁水的装置
公开(公告)号：US07622071B2
公开(公告)日：2009-11-24
申请号：US11575525
申请日：2005-10-18
申请人： Kwang-Hee Lee , Sung-Kee Shin , Min-Chul Park , Sang-Hoon Joo , Deuk-Chae Kim , Soo-Young Bang , Kwang-Soo Choi , Il-Hyun Cho , Seung-Ho Choi , Myung-Sik Kim , Chong-Won Choi
发明人： Kwang-Hee Lee , Sung-Kee Shin , Min-Chul Park , Sang-Hoon Joo , Deuk-Chae Kim , Soo-Young Bang , Kwang-Soo Choi , Il-Hyun Cho , Seung-Ho Choi , Myung-Sik Kim , Chong-Won Choi
IPC分类号： C22B1/24
CPC分类号： B30B11/16 , B30B15/308 , C21B13/0086 , C22B1/248 , Y02P10/136
摘要： The present invention relates to an apparatus for manufacturing compacted irons of the reduced materials containing fine reduce irons and an apparatus for manufacturing molten irons provided with the same. The apparatus for manufacturing compacted irons according to the present invention includes a couple of rollers for compacting reduced materials containing fine reduced irons and manufacturing compacted irons, a guide chute for guiding compacted irons which are discharged from the couple of rollers; and crushers for crushing compacted irons which are guided into the guide chute. A guiding surface of the guide chute, which guides the compacted irons, includes a straight slanted surface and a curved slanted surface.
摘要翻译：本发明涉及一种用于制造含有精细还原铁的还原材料的压制铁的装置和一种用于制造设置有这种熨斗的铁水的装置。根据本发明的用于制造压实铁的装置包括一对辊，用于压缩含有精细还原铁的还原材料和制造压实的熨斗;导向滑槽，用于引导从一对辊排出的压实的熨斗; 用于破碎导入滑槽的压实铁的破碎机。导向滑槽的引导表面，其引导压实的熨斗，包括直的倾斜表面和弯曲的倾斜表面。

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