专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US5665202A Multi-step planarization process using polishing at two different pad pressures 失效
标题翻译：使用两种不同压力下的抛光进行多步平面化处理
公开(公告)号：US5665202A
公开(公告)日：1997-09-09
申请号：US562440
申请日：1995-11-24
申请人： Chitra K. Subramanian , Asanga H. Perera , James D. Hayden , Subramoney V. Iyer
发明人： Chitra K. Subramanian , Asanga H. Perera , James D. Hayden , Subramoney V. Iyer
IPC分类号： H01L21/3105 , H01L21/306
CPC分类号： H01L21/31053
摘要： A process for polish planarizing a fill material (40) overlying a semiconductor substrate (30) includes a multi-step polishing process. In one embodiment, a second planarization layer (42) is deposited over a fill material (40) and a portion of the fill material (40) is removed leaving a remaining portion (44). The pad pressure of a CMP apparatus (20) is adjusted such that a first pressure is generated during the polishing process. Then, the remaining portion (44) is removed, while operating the CMP apparatus (20) at a second pad pressure. The selectivity of the polishing process is maintained by reducing the pad pressure during the second polishing step. In a second embodiment, after the first polishing step is performed, the remaining portion (44) is removed by an etching process using a portion (46) of second planarization layer (42).
摘要翻译：抛光平面化覆盖半导体衬底（30）的填充材料（40）的工艺包括多步抛光工艺。在一个实施例中，第二平坦化层（42）沉积在填充材料（40）上，并且去除填充材料（40）的一部分，留下剩余部分（44）。调整CMP装置（20）的衬垫压力，使得在抛光过程中产生第一压力。然后，在第二焊盘压力下操作CMP装置（20）的同时去除剩余部分（44）。通过在第二抛光步骤期间减小垫压力来维持抛光工艺的选择性。在第二实施例中，在执行第一抛光步骤之后，通过使用第二平坦化层（42）的部分（46）的蚀刻工艺去除剩余部分（44）。

2. 发明授权

US6146250A Process for forming a semiconductor device 失效
标题翻译：用于形成半导体器件的工艺
公开(公告)号：US6146250A
公开(公告)日：2000-11-14
申请号：US352903
申请日：1999-07-15
申请人： Rajan Nagabushnam , Subramoney V. Iyer
发明人： Rajan Nagabushnam , Subramoney V. Iyer
IPC分类号： B24B37/04 , B24B41/047 , B24D13/14 , H01L21/3105 , B24B1/00
CPC分类号： B24B37/105 , B24B37/042 , B24B37/24 , B24B41/047 , H01L21/31053
摘要： Vibrating and oscillating rates can be dynamically changed during polishing to achieve an optimal polishing process. A semiconductor device substrate (34) has a first layer with a first film (12) and a second film (10) that overlies the first film (12), where the first film (12) is harder and underlies the second film (10). In one embodiment, the substrate (34) is placed over a first region (66) of a polishing pad (60). The second film (10) is polished at a first vibrating and oscillating rates over the first region (66). An endpoint signal is received when the first film (12) is reached. The substrate (34) is moved to a second region (62) of the polishing pad (60) that is closer to the edge of the pad and has a higher feature density compared to the first region (66). Polishing is performed at a second vibrating and oscillating rates that are different from the first vibrating and oscillating rates to remove the first film (10).
摘要翻译：可以在抛光过程中动态地改变振动和振荡速率，以达到最佳的抛光过程。半导体器件基板（34）具有第一层，第一层具有覆盖在第一膜（12）上的第一膜（12）和第二膜（10），其中第一膜（12）更硬并且位于第二膜（10））。在一个实施例中，将衬底（34）放置在抛光垫（60）的第一区域（66）上方。在第一区域（66）上以第一振动和振荡速率抛光第二膜（10）。当达到第一胶片（12）时接收端点信号。基板（34）移动到抛光垫（60）的靠近焊盘边缘的第二区域（62），并且与第一区域（66）相比具有更高的特征密度。以与第一振动和振荡速率不同的第二振动和振荡速率进行抛光以移除第一膜（10）。

3. 发明授权

US6012970A Process for forming a semiconductor device 失效
公开(公告)号：US6012970A
公开(公告)日：2000-01-11
申请号：US783975
申请日：1997-01-15
申请人： Rajan Nagabushnam , Subramoney V. Iyer
发明人： Rajan Nagabushnam , Subramoney V. Iyer
IPC分类号： B24B37/04 , B24B41/047 , B24D13/14 , H01L21/3105 , B24B1/00
CPC分类号： B24B37/105 , B24B37/042 , B24B37/24 , B24B41/047 , H01L21/31053
摘要： Vibrating and oscillating rates can be dynamically changed during polishing to achieve an optimal polishing process. A semiconductor device substrate (34) has a first layer with a first film (12) and a second film (10) that overlies the first film (12), where the first film (12) is harder and underlies the second film (10). In one embodiment, the substrate (34) is placed over a first region (66) of a polishing pad (60). The second film (10) is polished at a first vibrating and oscillating rates over the first region (66). An endpoint signal is received when the first film (12) is reached. The substrate (34) is moved to a second region (62) of the polishing pad (60) that is closer to the edge of the pad and has a higher feature density compared to the first region (66). Polishing is performed at a second vibrating and oscillating rates that are different from the first vibrating and oscillating rates to remove the first film (10).

4. 发明授权

US6001726A Method for using a conductive tungsten nitride etch stop layer to form conductive interconnects and tungsten nitride contact structure 失效
标题翻译：使用导电氮化钨蚀刻停止层形成导电互连和氮化钨接触结构的方法
公开(公告)号：US6001726A
公开(公告)日：1999-12-14
申请号：US822670
申请日：1997-03-24
申请人： Rajan Nagabushnam , Rajeev Bajaj , Ram Venkataraman , Shyam Mattay , Subramoney V. Iyer
发明人： Rajan Nagabushnam , Rajeev Bajaj , Ram Venkataraman , Shyam Mattay , Subramoney V. Iyer
IPC分类号： H01L21/3213 , H01L21/768 , H01L21/4763
CPC分类号： H01L21/32134 , H01L21/76841 , H01L21/76885
摘要： A method for forming a contact structure (10) which enables the use of ultra-shallow source/drain junctions begins by forming source and drain regions (14) and gate electrode (16). The source and drain regions (14) and the gate electrode (16) are silicided to form silicide regions (20). A conductive tungsten nitride etch stop layer (22) is formed overlying the silicide regions (20). Contact plug regions (28) are then formed to contact to the etch stop layer (22) and silicided regions (20). At this point, all of the silicide regions (20) are electrically short circuited. To remove this electric short circuit, an isotropic etch process comprising hydrogen peroxide, ammonium hydroxide, and water is used to remove portions of the tungsten nitride regions which are between the individual contact portions (28) in a self-aligned manner.
摘要翻译：形成能够使用超浅源极/漏极结的接触结构（10）的方法开始于形成源极和漏极区域（14）和栅极电极（16）。源极和漏极区域（14）和栅极电极（16）被硅化以形成硅化物区域（20）。形成覆盖硅化物区域（20）的导电氮化钨蚀刻停止层（22）。接触塞区域（28）然后形成为与蚀刻停止层（22）和硅化区域（20）接触。此时，所有硅化物区域（20）都电短路。为了去除该电短路，使用包括过氧化氢，氢氧化铵和水的各向同性蚀刻工艺，以自对准的方式去除位于各个接触部分（28）之间的部分氮化钨区域。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式