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    • 4. 发明申请
    • ION BEAM TREATMENT FOR THE STRUCTURAL INTEGRITY OF AIR-GAP III-NITRIDE DEVICES PRODUCED BY THE PHOTOELECTROCHEMICAL (PEC) ETCHING
    • 由光电化学(PEC)蚀刻生产的空气 - 氮气III-硝酸盐装置的结构完整性的离子束处理
    • US20080182420A1
    • 2008-07-31
    • US11940876
    • 2007-11-15
    • Evelyn L. HuShuji NakamuraYong Seok ChoiRajat SharmaChiou-Fu Wang
    • Evelyn L. HuShuji NakamuraYong Seok ChoiRajat SharmaChiou-Fu Wang
    • H01L21/302
    • H01L33/10H01L33/0075H01L33/0095
    • A method for ensuring the structural integrity of III-nitride opto-electronic or opto-mechanical air-gap nano-structured devices, comprising (a) performing ion beam implantation in a region of the III-nitride opto-electronic and opto-mechanical air-gap nano-structured device, wherein the milling significantly locally modifies a material property in the region to provide the structural integrity; and (b) performing a band-gap selective photo-electro-chemical (PEC) etch on the III-nitride opto-electronic and opto-mechanical air-gap nano-structured device. The method can be used to fabricate distributed Bragg reflectors or photonic crystals, for example. The method also comprises the suitable design of distributed Bragg reflector (DBR) structures for the PEC etching and the ion-beam treatment, the suitable design of photonic crystal distributed Bragg reflector (PCDBR) structures for PEC etching and the ion-beam treatment, the suitable placement of protection layers to prevent the ion-beam damage to optical activity and PEC etch selectivity, and a suitable annealing treatment for curing the material quality after the ion-beam treatment.
    • 一种用于确保III族氮化物光电子或光电机械气隙纳米结构器件的结构完整性的方法,包括(a)在III族氮化物光电子和光机电空气的区域中进行离子束注入 其中所述研磨显着地局部地修饰该区域中的材料性质以提供结构完整性; 和(b)在III族氮化物光电子和光机电气隙纳米结构器件上进行带隙选择性光电化学(PEC)蚀刻。 该方法可用于制造分布式布拉格反射器或光子晶体。 该方法还包括用于PEC蚀刻和离子束处理的分布式布拉格反射器(DBR)结构的合适设计,用于PEC蚀刻和离子束处理的光子晶体分布布拉格反射器(PCDBR)结构的合适设计, 保护层的适当放置以防止离子束损伤光学活性和PEC蚀刻选择性,以及适当的退火处理以在离子束处理后固化材料质量。