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1. 发明申请

US20050087823A1 Read-only memory cell and fabrication method thereof 审中-公开
标题翻译：只读存储单元及其制造方法
公开(公告)号：US20050087823A1
公开(公告)日：2005-04-28
申请号：US10994018
申请日：2004-11-19
申请人： Ching-Nan Hsiao , Chao-Sung Lai , Yung-Meng Huang , Ying-Cheng Chuang
发明人： Ching-Nan Hsiao , Chao-Sung Lai , Yung-Meng Huang , Ying-Cheng Chuang
IPC分类号： H01L21/28 , H01L21/336 , H01L21/8238 , H01L21/8242 , H01L21/8246 , H01L27/115 , H01L29/76 , H01L29/792
CPC分类号： H01L27/11568 , H01L27/115 , H01L29/40117 , H01L29/66833 , H01L29/7923
摘要： A read-only memory cell (ROM) and a fabrication method thereof. The cell comprises a substrate, a plurality of bit lines, a plurality of bit line oxides, a gate dielectric layer and a word line. The bit lines are formed near the surface of the substrate. The bit line oxides are disposed over the bit lines. The gate dielectric layer is disposed over the substrate between the bit lines and further comprises a silicon-rich oxide layer. The word line is disposed over the bit line oxides and the gate dielectric layer.
摘要翻译：只读存储单元（ROM）及其制造方法。电池包括衬底，多个位线，多个位线氧化物，栅极电介质层和字线。在基板的表面附近形成位线。位线氧化物位于位线之上。栅介电层设置在位线之间的衬底上，并且还包括富硅氧化物层。字线设置在位线氧化物和栅极电介质层之上。

2. 发明申请

US20050032308A1 Multi-bit vertical memory cell and method of fabricating the same 审中-公开
标题翻译：多位垂直存储单元及其制造方法
公开(公告)号：US20050032308A1
公开(公告)日：2005-02-10
申请号：US10775307
申请日：2004-02-10
申请人： Ching-Nan Hsiao , Chao-Sung Lai , Yung-Meng Huang
发明人： Ching-Nan Hsiao , Chao-Sung Lai , Yung-Meng Huang
IPC分类号： H01L21/336 , H01L21/8242 , H01L21/8246 , H01L27/115
CPC分类号： H01L27/11568 , H01L27/115
摘要： A multi-bit vertical memory cell and method of fabricating the same. The multi-bit vertical memory cell comprises a semiconductor substrate with a trench, a plurality of bit lines formed therein near its surface and the bottom trench respectively, a plurality of bit line insulating layers over each bit line, a silicon rich oxide layer conformably formed on the sidewall of the trench and the surface of the surface of the bit line insulating layer, and a word line over the silicon rich oxide layer, and the trench is filled with the word line.
摘要翻译：一种多位垂直存储单元及其制造方法。多位垂直存储单元包括具有沟槽的半导体衬底，分别在其表面附近形成的多个位线和底部沟槽，每个位线上的多个位线绝缘层，顺应地形成的富硅氧化物层在沟槽的侧壁和位线绝缘层的表面的表面以及位于富硅氧化物层上的字线，并且沟槽被字线填充。

3. 发明授权

US09922803B2 Plasma processing device 有权
公开(公告)号：US09922803B2
公开(公告)日：2018-03-20
申请号：US13653642
申请日：2012-10-17
申请人： Chi-Hsien Huang , Chao-Sung Lai , Chien Chou , Chu-Fa Chan
发明人： Chi-Hsien Huang , Chao-Sung Lai , Chien Chou , Chu-Fa Chan
IPC分类号： H01L21/00 , H01J37/32 , C23C16/455
CPC分类号： H01J37/32091 , C23C16/45565 , H01J37/32082 , H01J37/32357 , H01J37/32422 , H01J37/32633
摘要： The invention provides a plasma processing device, wherein the upper electrode and the lower electrode are in the vacuum chamber. The chip is placed in the lower electrode. The first plate is placed between the upper electrode and the lower electrode, and the first plate includes a plurality of first voids. The second plate is placed between the first plate and the lower electrode, and the second plate includes a plurality of second voids. The high frequency power is provided by the upper electrode and the lower electrode in the vacuum chamber, and the plasma is generated between the third plate and the upper electrode. The plasma is filtered by the third void, the first void, and the second void.

4. 发明授权

US08901678B2 Light-assisted biochemical sensor 有权
标题翻译：光辅助生化传感器
公开(公告)号：US08901678B2
公开(公告)日：2014-12-02
申请号：US12970583
申请日：2010-12-16
申请人： Liann-Be Chang , Chao-Sung Lai , Po-Chuan Chen
发明人： Liann-Be Chang , Chao-Sung Lai , Po-Chuan Chen
IPC分类号： H01L29/78 , H01L31/0216 , H01L31/173
CPC分类号： H01L31/173 , H01L31/02161
摘要： A light-assisted biochemical sensor based on a light addressable potentiometric sensor is disclosed. The light-assisted biochemical sensor comprises a semiconductor substrate and a sensing layer, which are used to detect the specific ion concentration or the biological substance concentration of a detected solution. Lighting elements fabricated directly on the back surface of the semiconductor substrate directly illuminate the light to the semiconductor substrate, so as to enhance the photoconduction property of the semiconductor substrate. And then, the hysteresis and the sensing sensitivity of the light-assisted biochemical sensor are respectively reduced and improved. In addition, due to its characteristics of integration, the light-assisted biochemical sensor not only reduces the fabrication cost but also has portable properties and real-time detectable properties. As a result, its detection range and the application range are wider.
摘要翻译：公开了一种基于光寻址电位传感器的光辅助生化传感器。光辅助生化传感器包括半导体衬底和感测层，用于检测检测到的溶液的特定离子浓度或生物物质浓度。直接在半导体衬底的背面上制造的照明元件直接将光照射到半导体衬底上，以提高半导体衬底的光电导性。然后，分别降低和改善了光辅助生化传感器的滞后和感测灵敏度。另外，由于其综合特性，光辅助生物传感器不仅降低了制造成本，而且具有便携性和实时可检测性。因此，其检测范围和应用范围更广。

5. 发明申请

US20110226736A1 METHOD OF PATTERNING METAL ALLOY MATERIAL LAYER HAVING HAFNIUM AND MOLYBDENUM 有权
标题翻译：具有铪和钼的金属合金材料层的方法
公开(公告)号：US20110226736A1
公开(公告)日：2011-09-22
申请号：US13118604
申请日：2011-05-31
申请人： Chih-Wei Huang , Chao-Sung Lai , Hsing-Kan Peng , Chung-Yuan Lee , Shian-Jyh Lin
发明人： Chih-Wei Huang , Chao-Sung Lai , Hsing-Kan Peng , Chung-Yuan Lee , Shian-Jyh Lin
IPC分类号： C23F1/02 , C23F1/26
CPC分类号： C23F1/26 , H01L21/32134
摘要： A method of patterning a metal alloy material layer having hafnium and molybdenum. The method includes forming a patterned mask layer on a metal alloy material layer having hafnium and molybdenum on a substrate. The patterned mask layer is used as a mask and an etching process is performed using an etchant on the metal alloy material layer having hafnium and molybdenum so as to form a metal alloy layer having hafnium and molybdenum. The etchant includes at least nitric acid, hydrofluoric acid and sulfuric acid. The patterned mask layer is removed.
摘要翻译：图案化具有铪和钼的金属合金材料层的方法。该方法包括在基板上的具有铪和钼的金属合金材料层上形成图案化掩模层。图案化掩模层用作掩模，并且使用具有铪和钼的金属合金材料层上的蚀刻剂进行蚀刻处理，以形成具有铪和钼的金属合金层。蚀刻剂至少包括硝酸，氢氟酸和硫酸。去除图案化的掩模层。

6. 发明授权

US07911028B2 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07911028B2
公开(公告)日：2011-03-22
申请号：US12183077
申请日：2008-07-31
申请人： Shian-Jyh Lin , Chih-Wei Huang , Chao-Sung Lai , Hsing-Kan Peng
发明人： Shian-Jyh Lin , Chih-Wei Huang , Chao-Sung Lai , Hsing-Kan Peng
IPC分类号： H01L29/94
CPC分类号： H01L28/75 , H01L21/28088 , H01L21/823842 , H01L29/4966 , H01L29/66181 , H01L29/785
摘要： A semiconductor device including a metallic compound Hfx1Moy1Nz1 as an electrode. The work function of the electrode can be modulated by doping the metallic compound with dopants including nitrogen, silicon or germanium. The metallic compound of the present invention is applicable to PMOS, NMOS, CMOS transistors and capacitors.
摘要翻译：一种半导体器件，包括金属化合物Hfx1Moy1Nz1作为电极。电极的功函数可以通过掺杂含有氮，硅或锗的掺杂剂的金属化合物来调节。本发明的金属化合物可应用于PMOS，NMOS，CMOS晶体管和电容器。

7. 发明授权

US06696344B1 Method for forming a bottle-shaped trench 有权
标题翻译：形成瓶状沟槽的方法
公开(公告)号：US06696344B1
公开(公告)日：2004-02-24
申请号：US10384947
申请日：2003-03-10
申请人： Shian-Jyh Lin , Hsin-Jung Ho , Chao-Sung Lai , Tzu-Ching Tsai
发明人： Shian-Jyh Lin , Hsin-Jung Ho , Chao-Sung Lai , Tzu-Ching Tsai
IPC分类号： H01L218242
CPC分类号： H01L27/1087
摘要： A method for forming a bottle-shaped trench. A semiconductor substrate having a pad stack layer thereon and a trench in a predetermined position is provided. A first dielectric layer is then formed on the lower sidewalls of the trench. Next, a second dielectric layer is formed to cover the upper sidewalls of the trench and the pad stack layer. Then, a protection layer is formed on the sidewalls portions of the second dielectric layer. The first dielectric layer is then removed to expose the lower portion of trench. Wet stripping is then carried out to increase the radius of the lower portion of the trench thereby forming a bottle-shaped trench.
摘要翻译：一种用于形成瓶形沟槽的方法。提供其上具有衬垫叠层的半导体衬底和处于预定位置的沟槽。然后在沟槽的下侧壁上形成第一电介质层。接下来，形成第二电介质层以覆盖沟槽和衬垫叠层层的上侧壁。然后，在第二电介质层的侧壁部分上形成保护层。然后去除第一电介质层以暴露沟槽的下部。然后进行湿剥离以增加沟槽下部的半径，从而形成瓶形沟槽。

8. 发明授权

US08441080B2 Sensing device 有权
标题翻译：感应装置
公开(公告)号：US08441080B2
公开(公告)日：2013-05-14
申请号：US12793647
申请日：2010-06-03
申请人： Tung-Ming Pan , Min-Hsien Wu , Ming-De Huang , Chao-Sung Lai
发明人： Tung-Ming Pan , Min-Hsien Wu , Ming-De Huang , Chao-Sung Lai
IPC分类号： H01L27/14
CPC分类号： A61B5/14539 , C12Q1/001 , G01N27/4145
摘要： A sensing device includes: a semiconductor layer of a field effect semiconductor having upper and lower surfaces; a conductive layer formed on the lower surface of the semiconductor layer; and a sensor layer of an insulator formed on the upper surface of the semiconductor layer. The insulator is made from lanthanide-titanium oxide.
摘要翻译：感测装置包括：具有上表面和下表面的场效应半导体的半导体层; 形成在所述半导体层的下表面上的导电层; 以及形成在半导体层的上表面上的绝缘体的传感器层。绝缘体由镧系元素 - 氧化钛制成。

9. 发明授权

US06716757B2 Method for forming bottle trenches 有权
标题翻译：瓶沟形成方法
公开(公告)号：US06716757B2
公开(公告)日：2004-04-06
申请号：US10430874
申请日：2003-05-07
申请人： Shian-Jyh Lin , Chao-Sung Lai
发明人： Shian-Jyh Lin , Chao-Sung Lai
IPC分类号： H01L21762
CPC分类号： H01L29/66181 , H01L21/3065
摘要： A method for forming bottle trenches. The method comprises providing a substrate formed with a pad stack layer on the top, and a deep trench with protective layer on the upper portions of sidewalls thereof, implanting ions into the lower portions of sidewalls and bottom of the trench not covered by the protective layer to amorphize the atomic structure of the sidewalls and bottom, oxidizing the amorphous sidewalls and bottom of the trench to form a bottle-shaped oxide layer thereon, and removing the bottle-shaped oxide layer.
摘要翻译：一种形成瓶沟的方法。该方法包括在顶部提供形成有衬垫叠层的衬底和在其侧壁的上部上具有保护层的深沟槽，将离子注入未被保护层覆盖的沟槽的侧壁和底部的下部使侧壁和底部的原子结构非晶化，氧化无定形侧壁和沟槽底部以在其上形成瓶状氧化物层，并且去除瓶状氧化物层。

10. 发明授权

US5567638A Method for suppressing boron penetration in PMOS with nitridized polysilicon gate 失效
标题翻译：用氮化多晶硅栅抑制PMOS中硼渗透的方法
公开(公告)号：US5567638A
公开(公告)日：1996-10-22
申请号：US490401
申请日：1995-06-14
申请人： Yung-Hao Lin , Chao-Sung Lai , Chung-Len Lee , Tan-Fu Lei
发明人： Yung-Hao Lin , Chao-Sung Lai , Chung-Len Lee , Tan-Fu Lei
IPC分类号： H01L21/28 , H01L29/49 , H01L21/265
CPC分类号： H01L29/4916 , H01L21/28035 , H01L21/28061 , H01L29/4925
摘要： A method for suppressing boron penetration in a PMOS with a nitridized polysilicon gate includes steps of 1) growing a layer of gate oxide on a substrate, 2) forming at least one first polysilicon layer on the gate oxide layer, 3) nitridizing the first polysilicon layer, 4) forming a second polysilicon layer on the first polysilicon layer; and 5) implanting B-containing ions into the first and second polysilicon layers for constructing a PMOS structure wherein the nitridizing step suppresses a boron ion from penetration into the substrate. The present invention is characterized in nitridation on a polysilicon gate instead of a gate oxide which can effectively suppress boron penetration, avoid drawbacks resulting from nitridizing a gate oxide, and moreover, improve the reliability of the device owing to the slight nitridation effect in the polysilicon gate and the gate oxide.
摘要翻译：一种抑制具有氮化多晶硅栅极的PMOS中的硼渗透的方法包括以下步骤：1）在衬底上生长栅极氧化层，2）在栅极氧化物层上形成至少一个第一多晶硅层，3）使第一多晶硅氮化 4）在第一多晶硅层上形成第二多晶硅层; 以及5）将含B离子注入到第一和第二多晶硅层中以构成PMOS结构，其中氮化步骤抑制硼离子渗透到基底中。本发明的特征在于在多晶硅栅极上进行氮化，而不是可以有效抑制硼渗透的栅极氧化物，避免由于氮化栅极氧化物而导致的缺陷，而且由于多晶硅中的轻微的氮化作用，提高了器件的可靠性栅极和栅极氧化物。

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