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1. 发明申请

US20080021193A1 Process of manufacturing DOPO derivatives for printed circuit board and low-earth orbit spacecraft applications 审中-公开
标题翻译：制造用于印刷电路板和低地球轨道航天器应用的DOPO衍生物的方法
公开(公告)号：US20080021193A1
公开(公告)日：2008-01-24
申请号：US11819617
申请日：2007-06-28
申请人： Ching-Hsuan Lin , Chun-Hung Lin
发明人： Ching-Hsuan Lin , Chun-Hung Lin
IPC分类号： C07D521/00 , C08G63/44
CPC分类号： C08G73/1067 , C07F9/657172 , H05K1/0346 , H05K2201/012 , H05K2201/0154
摘要： A method of manufacturing new materials for a printed circuit board and Low-Earth Orbit (LEO) spacecraft is provided. The present invention includes dinitro, diamine, various phosphorous-containing polyimides and polyamides, and synthesizing methods thereof. The polymers of the embodiment of present invention exhibit good flame retardancy, high glass transition temperature, good mechanical properties and superior oxygen resistance, so they are good materials for Low-Earth Orbit applications. Besides, these polymers can also be used as matrix for halogen-free flexible printed circuit board.
摘要翻译：提供了制造印刷电路板和低地轨道（LEO）航天器新材料的方法。本发明包括二硝基二胺，各种含磷聚酰亚胺和聚酰胺及其合成方法。本发明实施方案的聚合物显示出良好的阻燃性，高玻璃化转变温度，良好的机械性能和优异的耐氧性，因此它们是用于低地球轨道应用的良好材料。此外，这些聚合物也可以用作无卤柔性印刷电路板的基质。

2. 发明授权

US08927314B2 Method of manufacturing solar cell with two exposed surfaces of arc layer disposed at different levels 有权
标题翻译：制造太阳能电池的方法，其具有设置在不同水平的弧形层的两个暴露表面
公开(公告)号：US08927314B2
公开(公告)日：2015-01-06
申请号：US13549814
申请日：2012-07-16
申请人： Sheng Yung Liu , Chin-Tien Yang , Chun-Hung Lin
发明人： Sheng Yung Liu , Chin-Tien Yang , Chun-Hung Lin
IPC分类号： H01L21/00 , H01L31/0224 , H01L31/0216
CPC分类号： H01L31/022433 , H01L31/02168 , Y02E10/50 , Y02E10/52
摘要： A method of manufacturing a solar cell includes the steps of: providing a substrate having a front side, a back side and a doped region; forming a conductor layer on the front side; firing the conductor layer at a temperature such that the conductor layer is formed with a first portion embedded into the doped region and a second portion other than the first portion; forming an anti-reflection coating (ARC) layer on the front side and the second portion, wherein the ARC layer covers the conductor layer so that the second portion of the conductor layer is disposed in the ARC layer; and removing the ARC layer on the conductor layer so that the conductor layer has an exposed surface exposed out of the ARC layer, wherein the exposed surface of the conductor layer is substantially flush with a first exposed surface of the ARC layer.
摘要翻译：一种制造太阳能电池的方法包括以下步骤：提供具有正面，背面和掺杂区域的基板; 在前侧形成导体层; 在使得导体层形成有嵌入掺杂区域的第一部分和除了第一部分之外的第二部分的温度下烧制导体层; 在前侧和第二部分形成防反射涂层（ARC）层，其中ARC层覆盖导体层，使得导体层的第二部分设置在ARC层中; 以及去除所述导体层上的所述ARC层，使得所述导体层具有暴露在所述ARC层外部的暴露表面，其中所述导体层的所述暴露表面基本上与所述ARC层的第一暴露表面齐平。

3. 发明授权

US08728851B2 Method of manufacturing solar cell with upper and lower conductor layers stacked together 有权
标题翻译：具有层叠在一起的上下导体层的太阳能电池的制造方法
公开(公告)号：US08728851B2
公开(公告)日：2014-05-20
申请号：US13549877
申请日：2012-07-16
申请人： Sheng Yung Liu , Chin-Tien Yang , Chun-Hung Lin
发明人： Sheng Yung Liu , Chin-Tien Yang , Chun-Hung Lin
IPC分类号： H01L31/18
CPC分类号： H01L31/022433 , H01L31/02168 , Y02E10/50 , Y02E10/52
摘要： A method of manufacturing a solar cell comprises the steps of: forming a lower conductor layer on a front side of a substrate; firing the lower conductor layer at a first temperature to form a first portion embedded into a doped region of the substrate and a second portion; forming an anti-reflection coating (ARC) layer on the front side and the second portion, wherein the ARC layer covers the lower conductor layer such that the second portion is disposed in the ARC layer; forming an upper conductor layer, corresponding to the lower conductor layer and electrically connected to the lower conductor layer, on the ARC layer; and firing the upper conductor layer at a second temperature to form a first portion embedded into the ARC layer and a second portion, which is exposed out of the ARC layer.
摘要翻译：一种制造太阳能电池的方法包括以下步骤：在基板的正面形成下导体层; 在第一温度下焙烧下导体层以形成嵌入衬底的掺杂区域中的第一部分和第二部分; 在前侧和第二部分形成防反射涂层（ARC）层，其中ARC层覆盖下导体层，使得第二部分设置在ARC层中; 在ARC层上形成对应于下导体层并电连接到下导体层的上导体层; 以及在第二温度下烧制所述上导体层以形成嵌入到所述ARC层中的第一部分和暴露在所述ARC层外的第二部分。

4. 发明授权

US08603723B2 Image transfer process 有权
标题翻译：图像传输过程
公开(公告)号：US08603723B2
公开(公告)日：2013-12-10
申请号：US13014285
申请日：2011-01-26
申请人： Hsi-Wen Chang , Wei-Jen Lai , Pi-Ju Chiang , Chun-Hung Lin , Jung Ya Hsieh
发明人： Hsi-Wen Chang , Wei-Jen Lai , Pi-Ju Chiang , Chun-Hung Lin , Jung Ya Hsieh
IPC分类号： G03C5/16 , G03F1/00 , G02F1/03
CPC分类号： G03C11/12 , D06P1/0012 , D06P5/2005
摘要： The present invention relates to an image transfer process. The process includes the steps of: a) providing an image carrying device including at least one photoluminescent surface; b) displaying a luminous image on a display surface of a light-emitting medium; and c) positioning the display surface of the light-emitting medium that is displaying the luminous image at a distance from the at least one photoluminescent surface of the image carrying device shorter than a predetermined effective distance, for a predetermined period of time.
摘要翻译：本发明涉及图像转印处理。该方法包括以下步骤：a）提供包括至少一个光致发光表面的图像承载装置; b）在发光介质的显示表面上显示发光图像; 以及c）将显示所述发光图像的所述发光介质的显示表面定位在比所述图像承载装置的所述至少一个光致发光表面短一预定有效距离的预定时间段。

5. 发明申请

US20130206369A1 HEAT DISSIPATING DEVICE 审中-公开
标题翻译：热灭火装置
公开(公告)号：US20130206369A1
公开(公告)日：2013-08-15
申请号：US13371480
申请日：2012-02-13
申请人： Wei-I Lin , Chien-Chih Yeh , Wen-Shiang Chen , Chun-Hung Lin
发明人： Wei-I Lin , Chien-Chih Yeh , Wen-Shiang Chen , Chun-Hung Lin
IPC分类号： F28D15/04
CPC分类号： F28D15/043
摘要： A heat dissipating device includes a chamber body, a heat sink, a pipe, a first capillary structure and N vapor channels. The chamber body has an evaporation chamber and a compensation chamber, wherein the evaporation chamber has a vapor outlet and the compensation chamber has a liquid inlet. The heat sink is disposed on an outer wall of a first side of the chamber body and at least covers the compensation chamber. The pipe is installed within the heat sink, wherein a first end of the pipe is connected to the vapor outlet and a second end of the pipe is connected to the liquid inlet. The first capillary structure is formed in the evaporation chamber. The N vapor channels are formed in the first capillary structure. The N vapor channels and the compensation chamber are isolated by the first capillary structure.
摘要翻译：散热装置包括室主体，散热器，管，第一毛细管结构和N个蒸气通道。腔体具有蒸发室和补偿室，其中蒸发室具有蒸汽出口，并且补偿室具有液体入口。散热器设置在室主体的第一侧的外壁上，并且至少覆盖补偿室。管道安装在散热器内，其中管道的第一端连接到蒸汽出口，并且管道的第二端连接到液体入口。第一毛细结构形成在蒸发室中。 N蒸汽通道形成在第一毛细管结构中。 N蒸气通道和补偿室由第一毛细管结构隔离。

6. 发明申请

US20130187277A1 CRACK STOPPER ON UNDER-BUMP METALLIZATION LAYER 有权
标题翻译：在下层金属化层的破裂停止
公开(公告)号：US20130187277A1
公开(公告)日：2013-07-25
申请号：US13443556
申请日：2012-04-10
申请人： Yu-Feng Chen , Chun-Hung Lin , Han-Ping Pu , Chih-Hang Tung , Kai-Chiang Wu , Ming-Che Ho
发明人： Yu-Feng Chen , Chun-Hung Lin , Han-Ping Pu , Chih-Hang Tung , Kai-Chiang Wu , Ming-Che Ho
IPC分类号： H01L23/48
CPC分类号： H01L24/13 , H01L23/488 , H01L24/02 , H01L24/05 , H01L24/10 , H01L24/11 , H01L24/16 , H01L2224/0401 , H01L2224/05027 , H01L2224/05111 , H01L2224/05144 , H01L2224/05147 , H01L2224/05155 , H01L2224/05166 , H01L2224/05181 , H01L2224/05186 , H01L2224/05551 , H01L2224/05555 , H01L2224/05572 , H01L2224/05611 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/05666 , H01L2224/05681 , H01L2224/05686 , H01L2224/10125 , H01L2224/1146 , H01L2224/1147 , H01L2224/11849 , H01L2224/13012 , H01L2224/13076 , H01L2224/13111 , H01L2224/13113 , H01L2224/13116 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/16237 , H01L2224/16238 , H01L2224/81191 , H01L2924/00014 , H01L2924/01029 , H01L2924/12042 , H01L2924/00012 , H01L2924/014 , H01L2924/04941 , H01L2924/04953 , H01L2924/01047 , H01L2224/05552 , H01L2924/00
摘要： A semiconductor die includes a crack stopper on an under-bump metallization (UBM) layer. The crack stopper is in the shape of hollow cylinder with at least two openings.
摘要翻译：半导体管芯包括在凸块下金属化（UBM）层上的裂纹阻挡层。裂缝止动器为具有至少两个开口的中空圆筒形状。

7. 发明申请

US20130175705A1 Stress Compensation Layer for 3D Packaging 有权
标题翻译： 3D包装应力补偿层
公开(公告)号：US20130175705A1
公开(公告)日：2013-07-11
申请号：US13348449
申请日：2012-01-11
申请人： Chun-Hung Lin , Yu-Feng Chen , Han-Ping Pu , Hung-Jui Kuo
发明人： Chun-Hung Lin , Yu-Feng Chen , Han-Ping Pu , Hung-Jui Kuo
IPC分类号： H01L23/52 , H01L21/56
CPC分类号： H01L23/562 , H01L21/565 , H01L23/3121 , H01L23/3128 , H01L23/49822 , H01L25/105 , H01L2224/16225 , H01L2225/1023 , H01L2225/1058 , H01L2924/01322 , H01L2924/15311 , H01L2924/15321 , H01L2924/18161 , H01L2924/3511 , H01L2924/00
摘要： A stress compensation for use in packaging, and a method of forming, is provided. The stress compensation layer is placed on an opposing side of a substrate from an integrated circuit die. The stress compensation layer is designed to counteract at least some of the stress exerted structures on the die side of the substrate, such as stresses exerted by a molding compound that at least partially encapsulates the first integrated circuit die. A package may also be electrically coupled to the substrate.
摘要翻译：提供了用于包装的应力补偿，以及形成方法。应力补偿层从集成电路管芯放置在衬底的相对侧上。应力补偿层被设计成抵抗基板的模具侧上的应力施加结构中的至少一些，例如由至少部分地封装第一集成电路管芯的模制化合物施加的应力。封装还可以电耦合到衬底。

8. 发明授权

US08316796B2 Film coating system and isolating device thereof 有权
标题翻译：薄膜涂布系统及其隔离装置
公开(公告)号：US08316796B2
公开(公告)日：2012-11-27
申请号：US11954843
申请日：2007-12-12
申请人： Chi-Hung Liu , Chih-Ming Chen , Chun-Hsien Su , Chih-Wei Chen , Wen-Tung Hsu , Chun-Hung Lin
发明人： Chi-Hung Liu , Chih-Ming Chen , Chun-Hsien Su , Chih-Wei Chen , Wen-Tung Hsu , Chun-Hung Lin
IPC分类号： C23C16/00
CPC分类号： H01J37/32568 , H01J37/3244 , H01J37/32825 , H01J2237/20214
摘要： A film coating system for coating an object includes a working station and an isolating device. The object is disposed on the working station, and the isolating device is utilized to isolate the object. The isolating device includes a body generating a first power, a first working fluid, a second working fluid, a first guiding portion and a second guiding portion. The first guiding portion guides the first working fluid to pass through the body, thereby forming a first working region to coat the object thereon. The second guiding portion guides the second working fluid excited by the first power of the body to pass through the body, thereby forming a second working region to separate the first working region from the object.
摘要翻译：用于涂覆物体的涂膜系统包括加工台和隔离装置。物体设置在工作站上，隔离装置用于隔离物体。隔离装置包括产生第一功率的主体，第一工作流体，第二工作流体，第一引导部分和第二引导部分。第一引导部引导第一工作流体穿过主体，从而形成第一工作区域以在其上涂覆物体。第二引导部分引导由身体的第一功率激发的第二工作流体穿过主体，从而形成第二工作区域以将第一工作区域与物体分开。

9. 发明授权

US08281741B2 Plasma deposition apparatus and deposition method utilizing same 有权
标题翻译：等离子体沉积设备及其沉积方法
公开(公告)号：US08281741B2
公开(公告)日：2012-10-09
申请号：US13019269
申请日：2011-02-01
申请人： Chia-Chiang Chang , Chin-Jyi Wu , Shin-Chih Liaw , Chun-Hung Lin
发明人： Chia-Chiang Chang , Chin-Jyi Wu , Shin-Chih Liaw , Chun-Hung Lin
IPC分类号： C23C16/455 , C23C16/452 , C23C16/50 , C23F1/00 , H01L21/306 , C23C16/06 , C23C16/22
CPC分类号： C23C16/402 , C23C16/345 , C23C16/45563 , C23C16/45595 , C23C16/513
摘要： A plasma deposition apparatus is provided. The plasma deposition apparatus comprises a chamber. A pedestal is placed in the chamber. A plasma generator is placed in the chamber and over the pedestal. The plasma generator comprises a plasma jet for plasma thin film deposition having a discharge direction angle θ1 larger than 0° and less than 90° between a normal direction of the pedestal and the discharge direction of the plasma jet. A gas-extracting pipe extends into the chamber and over the pedestal. The gas-extracting pipe provides a pumping path for particles and side-products having a pumping direction angle θ2 larger than 0° and less than 90° between the normal direction of the pedestal and the pumping direction of the gas-extracting pipe. The chamber is kept at an ambient atmospheric pressure.
摘要翻译：提供了一种等离子体沉积装置。等离子体沉积设备包括一个室。底座放置在腔室中。等离子体发生器放置在腔室中并在基座上方。等离子体发生器包括用于等离子体薄膜沉积的等离子体射流，其具有放电方向角度θ;在基座的法线方向与等离子体射流的排出方向之间大于0°且小于90°的1。气体提取管延伸到腔室中并且在基座上。气体提取管为具有泵送方向角度的颗粒和副产物提供泵送路径; 2在基座的法线方向与气体提取管的泵送方向之间大于0°且小于90°。室保持在环境大气压力。

10. 发明授权

US08277616B2 Surface treating device and surface treating method 有权
标题翻译：表面处理装置及表面处理方法
公开(公告)号：US08277616B2
公开(公告)日：2012-10-02
申请号：US11892853
申请日：2007-08-28
申请人： Chi-Hung Liu , Chun-Hung Lin , Chun-Hsien Su , Wen-Tung Hsu
发明人： Chi-Hung Liu , Chun-Hung Lin , Chun-Hsien Su , Wen-Tung Hsu
IPC分类号： B01J19/08
CPC分类号： A61B18/042 , A61C5/00 , A61C19/066
摘要： A surface treating method for treating a tooth surface and a surface treating device thereof are provided. First, a working gas is filled into a tube. Next, a voltage is provided to the working gas for exciting the working gas into plasma. After that, the plasma is discharged through an opening of the tube for contacting the tooth surface.
摘要翻译：提供了一种用于处理牙齿表面的表面处理方法及其表面处理装置。首先，将工作气体填充到管中。接下来，向工作气体提供用于将工作气体激发成等离子体的电压。之后，等离子体通过用于与齿面接触的管的开口排出。

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